JPS59201351A - Scan-type electron microscope - Google Patents
Scan-type electron microscopeInfo
- Publication number
- JPS59201351A JPS59201351A JP7667383A JP7667383A JPS59201351A JP S59201351 A JPS59201351 A JP S59201351A JP 7667383 A JP7667383 A JP 7667383A JP 7667383 A JP7667383 A JP 7667383A JP S59201351 A JPS59201351 A JP S59201351A
- Authority
- JP
- Japan
- Prior art keywords
- electron microscope
- scanning
- scan
- scanning signal
- type electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
Abstract
Description
【発明の詳細な説明】 (イ)産業上の利用分野 本発明は走査型電子顕微鏡における走査装置に関する。[Detailed description of the invention] (b) Industrial application fields The present invention relates to a scanning device in a scanning electron microscope.
(ロ)従来技術
従来走査型電子顕微鏡は試料面の走査領域とCI’(T
画面上の走査領域とは縦横の比率が同じに設定しである
ので、試料面とCRT画像とは相似の関係にある。通常
の試料面の観察にはこれが当然であるが、特殊な目的の
だめには、試料面とCRT画像とで走査領域の縦横比が
異っている方が好都合なことがある。例えばメッキ層内
の異物の検出と云うような場合で髪、厚さ10μmのメ
ッキ層の断面を長さ1mmにわたって検査しようとする
場合、メッキ層内の異物は厚0.5μm程度であるので
、これを眼視検出できるようにするため画像上で2mm
、位になるようにしようとすると倍率は4000倍とな
る。そうすると観察すべき長さは画像上では4mにもな
り、CRT上で一度に観察所要時間を考えると、きわめ
て非能率な検査となる。(b) Prior art The conventional scanning electron microscope
Since the scanning area on the screen is set to have the same aspect ratio, the sample surface and the CRT image have a similar relationship. This is natural for normal observation of the sample surface, but for special purposes, it may be advantageous for the aspect ratio of the scanning area to be different between the sample surface and the CRT image. For example, in the case of detecting foreign matter within a plating layer, when attempting to inspect a cross section of a hair plating layer with a thickness of 10 μm over a length of 1 mm, the foreign matter within the plating layer is approximately 0.5 μm thick. 2mm on the image so that this can be visually detected.
, the magnification will be 4000 times. In this case, the length to be observed becomes 4 m on the image, and considering the time required for one observation on the CRT, the inspection becomes extremely inefficient.
(ハ)目 的
本発明は上述したようなきわめて細長な領域の全面観察
に適した走査型電子顕微鏡の走査装置を提供しようとす
るものである。(C) Purpose The present invention provides a scanning device for a scanning electron microscope suitable for the entire observation of an extremely long and narrow area as described above.
(ニ)構 成
本発明はCRTに印加するX方向及びY方向の走査信号
の振幅比率は一定とし、走査型電子顕微鏡本体に印加す
るX方向及びY方向の走査信号の振幅比率を可変とした
点に特徴を有する。(D) Structure The present invention has a fixed amplitude ratio of the scanning signals in the X direction and the Y direction applied to the CRT, and a variable amplitude ratio of the scanning signals in the X direction and Y direction applied to the main body of the scanning electron microscope. It has the following characteristics.
実施例
第1図は本発明の一実施例を示す。1ばX方向走査信号
及びY方向走査信号発生器、2け走査型電子顕微鏡本体
、3はCRT表示装置である。走査信号発生器は走査型
電子顕微鏡本体2及びCR7表示装置3に対して共通で
あり、その出力信号はCRT表示装置にはそのま\、つ
まりX、 Y両走査信号の振幅比率一定の関係で印加さ
れる。他方走査信号発生器lの出力信号は走査型電子顕
微鏡本体側にけX方向及びY方向の走査信号各別に独立
して増幅度が加減できる増幅器4,5を介して印加され
る。4R,5Rは増幅器3,4の増幅度を加減する可変
抵抗である。6は走査型電子顕微鏡本体2における電子
ビーム偏向コイルで増幅器3,4の出力が印加されてい
る。7は試料であり、電子ビームの照射を受けて試料面
から放出された2次電子等が検出器8によって検出され
、検出器日の出力が増幅器9によって増幅されてCR7
表示装置3に輝度変調信号として印加される。Embodiment FIG. 1 shows an embodiment of the present invention. 1 is an X-direction scanning signal generator and a Y-direction scanning signal generator, a main body of a two-digit scanning electron microscope, and 3 is a CRT display device. The scanning signal generator is common to the scanning electron microscope main body 2 and the CR7 display device 3, and its output signal is sent to the CRT display device as is, with the amplitude ratio of both the X and Y scanning signals being constant. applied. On the other hand, the output signal of the scanning signal generator 1 is applied to the main body of the scanning electron microscope via amplifiers 4 and 5, which can independently adjust the amplification degree for each of the scanning signals in the X direction and the Y direction. 4R and 5R are variable resistors that adjust the amplification degree of the amplifiers 3 and 4. Reference numeral 6 denotes an electron beam deflection coil in the main body 2 of the scanning electron microscope, to which the outputs of the amplifiers 3 and 4 are applied. 7 is a sample, secondary electrons etc. emitted from the sample surface upon being irradiated with an electron beam are detected by a detector 8, and the output of the detector is amplified by an amplifier 9 and sent to CR7.
It is applied to the display device 3 as a brightness modulation signal.
上述の構成において、第2図に示すようにCR斤、 7表面装置3の画面Vの縦横比は一定している。In the above configuration, as shown in FIG. The aspect ratio of the screen V of the 7-surface device 3 is constant.
他方走査型電子顕微鏡本体2における試料7の表面の走
査範囲は増幅器4,5の増幅度の比率の選択によって第
2図81. S2,83等に示すように縦横比が自由
に変えられる。このようにして、試料面上の同一パター
ンPが走査範囲E11,82、 S3に対応してCR
T画面上では第2図A、 B、Cに示すように縦横の
倍率が異った映像として構成される。On the other hand, the scanning range of the surface of the sample 7 in the main body 2 of the scanning electron microscope is determined by selecting the ratio of the amplification degrees of the amplifiers 4 and 5 as shown in FIG. The aspect ratio can be freely changed as shown in S2, 83, etc. In this way, the same pattern P on the sample surface corresponds to the scanning ranges E11, 82, and S3.
On the T screen, images are constructed with different vertical and horizontal magnifications, as shown in Figure 2 A, B, and C.
(へ)効 果
第3図Aは鉄表面のクロムメッキ層の断面の従来の走査
型電子顕微鏡による映像で縦横の倍率は互に等しく20
0倍で映像上のメッキ層の厚さは0.5mm(実厚2−
51t m )であり、この0.5mm幅の像の中に含
まれている異物の像を見つけることはきわめて困難であ
る。そこでやむなく、縦横倍率は200倍のま\で縦方
向(Y方向)の倍率だけを4000倍に高める(走査型
電子顕微鏡本体側ではX方向走査信号に比しY方向走査
信号の振幅を小さくする)ことにより、第3図Bに示す
長さ方向には200倍のま\だから、長さ1mm幅
のメッキ層断面の観察は一度に]−00mm〜の画像観
察を行う(実際には試料移動前後の画像の端をオーバー
ラツプさせるので、一度に観察される範囲は例えば図示
のように1.40 mm程度である)として、2回の試
料移動で足り、メッキ層内の0゜5μm厚の異物が幅2
mmの像となって検出できることになる。(f) Effect Figure 3A is an image taken by a conventional scanning electron microscope of a cross section of the chromium plating layer on the iron surface, and the vertical and horizontal magnifications are equal to 20.
The thickness of the plating layer on the image at 0x is 0.5 mm (actual thickness 2-
51 t m ), and it is extremely difficult to find an image of a foreign object contained in this 0.5 mm wide image. Therefore, we had no choice but to keep the vertical and horizontal magnifications at 200x and increase only the vertical (Y-direction) magnification to 4000x (on the scanning electron microscope main body side, the amplitude of the Y-direction scanning signal is smaller than the X-direction scanning signal). ), the magnification is 200 times larger in the length direction as shown in Figure 3B, so when observing a cross section of a plating layer with a length and width of 1 mm, image observation from -00 mm is performed at one time (actually, the sample is moved Since the edges of the front and rear images overlap, the area observed at one time is, for example, about 1.40 mm (as shown in the figure), and it is sufficient to move the sample twice, and it is possible to detect foreign particles with a thickness of 0.5 μm in the plating layer. is width 2
This means that it can be detected as an image of mm.
第1図は本発明の一実施例装置の構成を示すブロック図
、第2図は本発明によるCRT画面と試料走査範囲と画
像の形の変化の関係を示す図、第3図Aは従来例による
CRT画面の一例の図、同Bは本発明によるCRT画面
の一例の図である。
]−・・・X方X方向力Y方向走査信号発生器・・・走
査型電子顕微鏡本体、ト・・CRT表示装置、4・・・
X方向走査信号増幅器、5・・・Y方向走査信号増幅器
。
代理人 弁理士 蒜 浩 介大2図
稗3図FIG. 1 is a block diagram showing the configuration of an apparatus according to an embodiment of the present invention, FIG. 2 is a diagram showing the relationship between the CRT screen, sample scanning range, and image shape change according to the present invention, and FIG. 3A is a conventional example. FIG. 1B is a diagram of an example of a CRT screen according to the present invention. FIG. ]-...X direction X direction force Y direction scanning signal generator...Scanning electron microscope main body, G...CRT display device, 4...
X-direction scanning signal amplifier, 5...Y-direction scanning signal amplifier. Agent Patent Attorney Hiroshi Hiru
Claims (1)
増幅度が加減できる増幅器を通して走査型電子顕微鏡本
体側の試料照射用電子ビーム偏向コイルに印加するよう
にしたことを特徴とする走査型電子顕微鏡。A scanning type characterized in that an X-direction scanning signal and a Y-direction scanning signal are applied to an electron beam deflection coil for sample irradiation on the scanning electron microscope main body side through amplifiers that can independently adjust the amplification degree. electronic microscope.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7667383A JPS59201351A (en) | 1983-04-30 | 1983-04-30 | Scan-type electron microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7667383A JPS59201351A (en) | 1983-04-30 | 1983-04-30 | Scan-type electron microscope |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59201351A true JPS59201351A (en) | 1984-11-14 |
JPH0463505B2 JPH0463505B2 (en) | 1992-10-12 |
Family
ID=13611940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7667383A Granted JPS59201351A (en) | 1983-04-30 | 1983-04-30 | Scan-type electron microscope |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59201351A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006138864A (en) * | 2001-08-29 | 2006-06-01 | Hitachi Ltd | Sample dimension measuring method and scanning electron microscope |
JP2007003535A (en) * | 2001-08-29 | 2007-01-11 | Hitachi Ltd | Sample dimension measuring method, and scanning electron microscope |
US7659508B2 (en) | 2001-08-29 | 2010-02-09 | Hitachi, Ltd. | Method for measuring dimensions of sample and scanning electron microscope |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5341062A (en) * | 1977-05-12 | 1978-04-14 | Nippon Fuirutaa Kk | Purifying method and apparatus for drainage by microorganism |
-
1983
- 1983-04-30 JP JP7667383A patent/JPS59201351A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5341062A (en) * | 1977-05-12 | 1978-04-14 | Nippon Fuirutaa Kk | Purifying method and apparatus for drainage by microorganism |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006138864A (en) * | 2001-08-29 | 2006-06-01 | Hitachi Ltd | Sample dimension measuring method and scanning electron microscope |
JP2007003535A (en) * | 2001-08-29 | 2007-01-11 | Hitachi Ltd | Sample dimension measuring method, and scanning electron microscope |
US7659508B2 (en) | 2001-08-29 | 2010-02-09 | Hitachi, Ltd. | Method for measuring dimensions of sample and scanning electron microscope |
US8080789B2 (en) | 2001-08-29 | 2011-12-20 | Hitachi, Ltd. | Sample dimension measuring method and scanning electron microscope |
Also Published As
Publication number | Publication date |
---|---|
JPH0463505B2 (en) | 1992-10-12 |
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