JPS59200752A - 成膜部材加熱装置 - Google Patents
成膜部材加熱装置Info
- Publication number
- JPS59200752A JPS59200752A JP7554783A JP7554783A JPS59200752A JP S59200752 A JPS59200752 A JP S59200752A JP 7554783 A JP7554783 A JP 7554783A JP 7554783 A JP7554783 A JP 7554783A JP S59200752 A JPS59200752 A JP S59200752A
- Authority
- JP
- Japan
- Prior art keywords
- casing
- heater
- forming member
- heating device
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7554783A JPS59200752A (ja) | 1983-04-28 | 1983-04-28 | 成膜部材加熱装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7554783A JPS59200752A (ja) | 1983-04-28 | 1983-04-28 | 成膜部材加熱装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59200752A true JPS59200752A (ja) | 1984-11-14 |
| JPH059515B2 JPH059515B2 (enExample) | 1993-02-05 |
Family
ID=13579327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7554783A Granted JPS59200752A (ja) | 1983-04-28 | 1983-04-28 | 成膜部材加熱装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59200752A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5063031A (en) * | 1989-08-24 | 1991-11-05 | Kabushiki Kaisha Toshiba | Apparatus for growing vapor phase layer on semiconductor substrate |
-
1983
- 1983-04-28 JP JP7554783A patent/JPS59200752A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5063031A (en) * | 1989-08-24 | 1991-11-05 | Kabushiki Kaisha Toshiba | Apparatus for growing vapor phase layer on semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH059515B2 (enExample) | 1993-02-05 |
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