JPS5919991A - Display - Google Patents

Display

Info

Publication number
JPS5919991A
JPS5919991A JP13091282A JP13091282A JPS5919991A JP S5919991 A JPS5919991 A JP S5919991A JP 13091282 A JP13091282 A JP 13091282A JP 13091282 A JP13091282 A JP 13091282A JP S5919991 A JPS5919991 A JP S5919991A
Authority
JP
Japan
Prior art keywords
layer
dielectric
drive circuit
display device
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13091282A
Other languages
Japanese (ja)
Inventor
権藤 浩之
沖 賢一
高原 和博
泰史 大川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13091282A priority Critical patent/JPS5919991A/en
Publication of JPS5919991A publication Critical patent/JPS5919991A/en
Pending legal-status Critical Current

Links

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 +a)  発明の技術分野 本発明は表示装置に係り1 さらに具体的には半導体基
板表面に左示素子ならびに、それら素子に対する駆動回
1/8を一体的に集積化した表示装置の構造の改良に関
する。
[Detailed Description of the Invention] +a) Technical Field of the Invention The present invention relates to a display device.1 More specifically, the present invention relates to a display device in which the left and right elements and 1/8 of the drive circuit for these elements are integrally integrated on the surface of a semiconductor substrate. This invention relates to improvements in the structure of display devices.

(b)  技術の背景 近年、半導体基板表面に表示素子ならびにそれら素子に
幻する駆動回路を一体的に集積化したEL表示装置が(
υ[究開発されている。
(b) Background of the technology In recent years, EL display devices in which display elements and drive circuits for these elements are integrally integrated on the surface of a semiconductor substrate (
υ [researched and developed.

特に最近はその動作を安定化するため、光および外部か
らの電磁誘導に対する遮蔽用のシールド電極を設りたち
のが出現している。
In particular, recently, in order to stabilize the operation, a shield electrode has been introduced to shield against light and electromagnetic induction from the outside.

(C1従来の技術と問題点 第1図は従来のこの種EL表示装置1区画分の構成を概
念的に示した断面図で、これに従ってその製作工程を説
明する。
(C1 Prior Art and Problems) FIG. 1 is a cross-sectional view conceptually showing the structure of one section of a conventional EL display device of this type, and the manufacturing process will be explained according to this drawing.

まず半導体基板表面l上に駆動回路即ちMOSトランジ
スタなどよりなる能動素子群2と、コンデンサや抵抗な
どよりなる受動素子群3を集積化して設番〕、アルミニ
ウムなどの蒸着金属により配線した(多、酸化シリコン
(Si O,)などの絶縁層4で覆い、その上にマトリ
ックス配列の画素電極5とシールド電極6を形成する。
First, a driving circuit, that is, an active element group 2 consisting of MOS transistors, etc., and a passive element group 3 consisting of capacitors, resistors, etc. were integrated on the semiconductor substrate surface 1 and wired with vapor-deposited metal such as aluminum. It is covered with an insulating layer 4 such as silicon oxide (Si 2 O,), and a matrix array of pixel electrodes 5 and a shield electrode 6 are formed thereon.

しかる後、酸化シリコン(Si O,、lを再び蒸着し
て総ての上記諸素子を覆う1oooo〜20000人の
厚さの絶縁層7を形成して該諸素子を湿気から保護する
所謂パッシベーションとすると共に、!&の工程で形成
するE L発光層が発光領域以外で発光するのを阻止す
る。
Thereafter, silicon oxide (SiO, 1) is deposited again to form an insulating layer 7 with a thickness of 10,000 to 20,000 people covering all the above-mentioned elements to protect the elements from moisture, so-called passivation. At the same time, the EL light emitting layer formed in the steps !& is prevented from emitting light outside the light emitting region.

次いでエツチングにより画素電極の直上の発光領域に窓
を穿ち表示領域を確定する。しかる後。
Next, a window is formed in the light emitting area directly above the pixel electrode by etching to define the display area. After that.

酸化イットリュウム(Y、0.)などの誘電体層8.8
aで、IEI、発光層(普通は硫化亜鉛−マンガンZn
S : Mn)  9を挾んで構成されたELl皆10
を形成する。
Dielectric layer such as yttrium oxide (Y, 0.)8.8
a, IEI, luminescent layer (usually zinc sulfide-manganese Zn
S: Mn) EL1 composed of 9 and 10
form.

さらその上に透明な前面電極11を、同一列内の各画素
電極に共通に形成して2両電極の対向領域即ち画素電極
対応に発光領域を構成する。
Furthermore, a transparent front electrode 11 is formed thereon in common to each pixel electrode in the same column, thereby forming a light emitting region corresponding to the opposing region of the two electrodes, that is, corresponding to the pixel electrode.

以上の説明より判るように、駆動回路を配設後。As you can see from the above explanation, after installing the drive circuit.

各種絶縁層やE L層の蒸着等、多数の工程を重ねてい
るので、その削減が強く望まれていた。
There is a strong desire to reduce the number of steps involved, such as the deposition of various insulating layers and EL layers.

(dl  発明の1−1的 本発明4;JIiil述の点に鑑みなされたもので、E
L表示装置等の誘電体Ifの祠質を見直し、製造工程数
を減らずことが出来るように改良された構造を提供しよ
うとするものである。
(dl Invention 1-1 Invention 4; This was made in view of the points stated in JIiil, and
The purpose is to review the abrasive quality of the dielectric If of L display devices, etc., and to provide an improved structure that can be performed without reducing the number of manufacturing steps.

tel  発明の構成 上記の本発明の目的は、共通の基板上に規則的に配列さ
れた複数個の画素電極を介して2層の誘電体層で挾んだ
EL発光層よりなる表示媒体を設け、且つ該画素電極に
対する駆動回路を一体的に集禎化してなる構成において
、前記EL発光層を挾む下側誘電体層と、前記駆動回路
の上に配設したシールド電極を被覆する絶縁層とを単一
の誘電体層で構成することより容易に達成される。
tel Structure of the Invention The object of the present invention described above is to provide a display medium comprising an EL light emitting layer sandwiched between two dielectric layers via a plurality of regularly arranged pixel electrodes on a common substrate. , and in a configuration in which a drive circuit for the pixel electrode is integrally integrated, a lower dielectric layer sandwiching the EL light emitting layer and an insulating layer covering a shield electrode disposed on the drive circuit. This can be more easily achieved by constructing the same dielectric layer with a single dielectric layer.

(fl  発明の実施例 以下本発明の実施例について述べるに先立ら。(fl Embodiments of the invention Before describing the embodiments of the present invention below.

L層:L表示装置を例として、その一部を構成している
誘電体層材料について考察しよう。
L layer: Taking an L display device as an example, let's consider the dielectric layer material that makes up a part of it.

上記の絶縁層4,7は半導体基板表面l上の前記駆動回
路を湿気等より保護する表面安定化層と。
The insulating layers 4 and 7 are surface stabilizing layers that protect the drive circuit on the semiconductor substrate surface l from moisture and the like.

該駆動回路の表示領域以外の部分の発光を阻止する電気
的絶縁層を兼ねているので、高い絶縁性と耐湿性を要求
されている・が、これには酸化シリコン(Si O,)
が最適で広く用いられている。
Since it also serves as an electrical insulating layer that blocks light emission in areas other than the display area of the drive circuit, it is required to have high insulation properties and moisture resistance.
is optimal and widely used.

これに対し、前記EL層10を構成する誘電体層8,8
aの祠質は絶縁性と誘電体係数が高いことがffi+、
層とし′Cの信頼性と発光能率の点より必須条件である
。また同時に、該誘電体層8.8aはEL発光JM(I
jV通は硫化亜鉛−マンガンZnS :Mn) 9に対
する密着性もよくなくてはならない。
On the other hand, the dielectric layers 8 and 8 constituting the EL layer 10
The abrasive quality of a has high insulation and dielectric coefficient, ffi+,
This is an essential condition from the viewpoint of the reliability of the layer and luminous efficiency. At the same time, the dielectric layer 8.8a
JV must also have good adhesion to zinc sulfide-manganese ZnS (Mn) 9.

これに適ず・旧4石としては、酸化イントリュウム(Y
、0.)や窒化シリ:I7 (Si、 N 4 )が挙
げられる。これらの誘電体係数はそれぞれ約12および
8である。前述の酸化シリコン(Si O,)の誘電体
係数は約3.5でありELiilOの、誘電体層には適
していない。
Intrium oxide (Y
,0. ) and silicon nitride: I7 (Si, N 4 ). Their dielectric coefficients are approximately 12 and 8, respectively. The aforementioned silicon oxide (SiO) has a dielectric constant of about 3.5 and is not suitable for the dielectric layer of ELiIO.

一方酸化イットリュウム(Y、02)は吸湿性があって
耐湿性の点で到底表面安定化層には使用できない。
On the other hand, yttrium oxide (Y, 02) is hygroscopic and cannot be used as a surface stabilizing layer due to its moisture resistance.

先に挙げた誘電体材料の中では窒化シリコン(Si、 
N 4)が絶縁性と耐湿性の点で前記表面安定化層とし
てもj角当である。
Among the dielectric materials mentioned above, silicon nitride (Si,
N4) is suitable for use as the surface stabilizing layer in terms of insulation and moisture resistance.

以上の考察をよく検討してみるとEL表示装置に使用す
るBpJ電体として、耐湿性が高く、電気的絶縁性に優
れ、誘電体係数の大きい、且つEL発光層(普通は硫化
亜鉛−マンガンZnS : Mn) 9への密着性も良
好な材料があれば、EL表示装置の製作工程の内、前記
の酸化シリコン(Si O,)の絶縁層7とEL発光層
(普通は硫化亜鉛−マンガンZnS : Mn) 9を
挾む2層の誘電体層の内の最初の絶縁IN 8の材質を
共通にして蒸着工程を同時に行うことが出来る。
A careful consideration of the above considerations reveals that the BpJ electric material used in EL display devices has high moisture resistance, excellent electrical insulation, a large dielectric coefficient, and an EL light emitting layer (usually zinc sulfide-manganese). If there is a material that has good adhesion to ZnS (Mn) 9, the insulating layer 7 of silicon oxide (SiO,) and the EL light emitting layer (usually zinc sulfide-manganese) can be formed in the manufacturing process of an EL display device. By using the same material for the first insulating layer IN 8 of the two dielectric layers sandwiching ZnS:Mn) 9, the vapor deposition process can be performed simultaneously.

具体的には従来の絶縁層7とELLi2O下側の絶縁層
8の共通誘電体材料として窒化シリコン(Si、 N 
、 )を採用し、上記の2つの層を1回の蒸着で同時に
形成する。
Specifically, silicon nitride (Si, N
), and the above two layers are simultaneously formed in one vapor deposition.

第2図はこの発明による新しいEL表示装置の一区画分
の構造を示す概念的な断面図である。図に示すように、
第1図に示す従来の構造の絶縁層7と誘電体IN 8の
代りに誘電体ff112が形成されている。
FIG. 2 is a conceptual cross-sectional view showing the structure of one section of the new EL display device according to the present invention. As shown in the figure,
A dielectric material ff112 is formed in place of the insulating layer 7 and dielectric material IN8 of the conventional structure shown in FIG.

該誘電体層12は画素電極5以外の領域での発光を阻止
するためその厚さは前述のように10000〜2000
0人でなりればならないので1画素電極5に対向する部
分は、エツチング法により図示のように厚さ2000人
程度に薄い層に加工して窓13を形成する必要がある。
The dielectric layer 12 has a thickness of 10,000 to 2,000 as described above in order to prevent light emission in areas other than the pixel electrode 5.
Since the number of electrodes must be zero, the portion facing one pixel electrode 5 must be etched into a thin layer of about 2,000 layers as shown in the figure to form the window 13.

その外の構造は従来の構造と何等変る所は無い。Other than that, the structure is no different from the conventional structure.

(gl  発明の効果 以上の説明から明らかなように2本発明による新しいE
L表示装置の構造を採用することにより。
(gl Effect of the invention As is clear from the above explanation, two new E
By adopting the structure of the L display device.

該装置Hの誘電体ILiの蒸着工程を削減し、製造原価
の低減に効果がある。
This is effective in reducing the vapor deposition process of the dielectric ILi of the device H, and reducing manufacturing costs.

【図面の簡単な説明】[Brief explanation of the drawing]

第1閉l 4J、 1)(−)k(1)Iff+、表示
装置の1区画分の構成を概念的に示した断面図、第2図
は本発明によるEl、表示装置の新しい構成1区画分を
示した概念的な断面図である。 図においC,Iは半導体基板、2は能動素子群。 3は受動素子I11’、  4. 7は絶縁層、5は画
素電極。 6はシールド111JIJi、  8. 8 a、  
] 2は誘電体層59はE L発光jす−1,10はE
LI晋、11は透明な前面電極、1;)は誘電体1響1
2に穿った発光領域の窓をそれぞ、jl、ボす。
1st closed l 4J, 1)(-)k(1)Iff+, sectional view conceptually showing the configuration of one section of the display device, Fig. 2 is El according to the present invention, new configuration of one section of the display device FIG. In the figure, C and I are semiconductor substrates, and 2 is an active element group. 3 is a passive element I11'; 4. 7 is an insulating layer, and 5 is a pixel electrode. 6 is shield 111JIJi, 8. 8 a.
] 2 is the dielectric layer 59 that emits E L light, -1, 10 is E
LI Jin, 11 is transparent front electrode, 1;) is dielectric 1 sound 1
Open the light emitting area windows drilled in step 2, respectively.

Claims (1)

【特許請求の範囲】[Claims] 共通の基JAi、I:に規則的に配列された複数個の画
素電極を介し62層の誘電体層で挾んだEL発光層より
なる表示媒体を設り、且つ該画素電極に対する駆動回路
を−・1ト的に集積化してなる構成において、前記E1
、発光層を挾む下側誘電体層と、前記駆動回路の−1−
に配設したシールド電極を被覆する絶縁層とをflol
−の誘電体層で構成することを特徴とする表示装置。
A display medium consisting of an EL light-emitting layer sandwiched between 62 dielectric layers via a plurality of regularly arranged pixel electrodes is provided on a common group JAi, I, and a drive circuit for the pixel electrodes is provided. - In a configuration in which the E1 is integrated in one
, a lower dielectric layer sandwiching the light emitting layer, and -1- of the drive circuit.
The insulating layer covering the shield electrode arranged on the flol
- A display device comprising a dielectric layer.
JP13091282A 1982-07-26 1982-07-26 Display Pending JPS5919991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13091282A JPS5919991A (en) 1982-07-26 1982-07-26 Display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13091282A JPS5919991A (en) 1982-07-26 1982-07-26 Display

Publications (1)

Publication Number Publication Date
JPS5919991A true JPS5919991A (en) 1984-02-01

Family

ID=15045637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13091282A Pending JPS5919991A (en) 1982-07-26 1982-07-26 Display

Country Status (1)

Country Link
JP (1) JPS5919991A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63191525A (en) * 1987-02-02 1988-08-09 Inax Corp Increased tightening tool for male screw element
JPH02232384A (en) * 1989-03-07 1990-09-14 Kobe Steel Ltd Method for removing oxidized film from copper alloy
JPH0521234B2 (en) * 1984-08-20 1993-03-23 Fujitsu Ltd

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521234B2 (en) * 1984-08-20 1993-03-23 Fujitsu Ltd
JPS63191525A (en) * 1987-02-02 1988-08-09 Inax Corp Increased tightening tool for male screw element
JPH0565299B2 (en) * 1987-02-02 1993-09-17 Inax Corp
JPH02232384A (en) * 1989-03-07 1990-09-14 Kobe Steel Ltd Method for removing oxidized film from copper alloy

Similar Documents

Publication Publication Date Title
US5701055A (en) Organic electoluminescent display panel and method for manufacturing the same
EP1777994B1 (en) Organic electroluminescent display device
US5952037A (en) Organic electroluminescent display panel and method for manufacturing the same
CN101083277B (en) Display device and manufacturing method thereof
CN1832223B (en) Organic electroluminescence display and method for manufacturing the same
CN101308865B (en) Organic electroluminescence display device
EP0732868A1 (en) Organic electroluminescent display panel and method for manufacturing the same
US20070188093A1 (en) Organic electroluminescent display panel
JP2000077192A (en) Organic electroluminescent panel and manufacture thereof
TWI241859B (en) Display unit and its manufacturing method
JPH11329717A (en) Color el panel
TW582186B (en) Method of fabricating organic light emitting display with passivation structure
JPS5919991A (en) Display
JPH05217673A (en) Manufacture of thin film el element
JPS5986194A (en) Thin film electroluminescent element
CN113421894B (en) Display panel and manufacturing method thereof
JPS5955484A (en) Display
JPS60126687A (en) Solid video display plate and manufacture thereof
JPH05152069A (en) Thin film el element and manufacture thereof
US7420325B2 (en) Display device
JPH03112088A (en) Thin film el element
JPH0883685A (en) White el element
JPH06119974A (en) Thin film light emitting element
KR100324767B1 (en) Semiconductor display device and fabricating method thereof
JPS5851382B2 (en) fluorescent display tube