JPS5919664A - Soft crystal polishing method - Google Patents

Soft crystal polishing method

Info

Publication number
JPS5919664A
JPS5919664A JP57126175A JP12617582A JPS5919664A JP S5919664 A JPS5919664 A JP S5919664A JP 57126175 A JP57126175 A JP 57126175A JP 12617582 A JP12617582 A JP 12617582A JP S5919664 A JPS5919664 A JP S5919664A
Authority
JP
Japan
Prior art keywords
polishing
crystal
abrasive grains
diamond abrasive
pitch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57126175A
Other languages
Japanese (ja)
Other versions
JPH0579462B2 (en
Inventor
Michio Ishikawa
石川 通夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57126175A priority Critical patent/JPS5919664A/en
Publication of JPS5919664A publication Critical patent/JPS5919664A/en
Publication of JPH0579462B2 publication Critical patent/JPH0579462B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PURPOSE:To make it possible to planish soft crystal by subjecting the surface of a block crystal body subjected to lapping to polishing and pitch grinding in combination with aqueous diamond abrasive grains in polishing of the soft crystal for an acoustooptic element. CONSTITUTION:For example, a PbMoO4 crystal raw material is cut into a block body by means of an internal periphery cutting blade cutting grindstone, and the surface of said block body is subjected to lapping to provide its flat satin-like surface with its roughness of about 1.0mum. Then, said roughly finished surface is cut away by about 20mum by polishing it on an Sn plate provided with a concentric groove by making use of a polishing agent obtained by mixing 1mum diamond abrasive grains into pure water by 1.3% of said grains against the pure water. Then, when subjecting scratches produced in the polishing surface to pitch grinding on a K-3 pitch plate equipped with grid-shaped grooves using a polishing agent obtained by diluting 1mum diamond abrasive grains by pure water to the concentration of said grains 1.3% to remove said surface by about 6mum, this surface provides a specular surface posessing only several lines of scratches per the surface.

Description

【発明の詳細な説明】 本発明は、超音波光偏光器などの音響光学素子に用いら
れる軟質結晶例えばモリブデン酸鉛(PbMo04)単
結晶(以下PbMoO4結晶と略すンの表面をスクラッ
チのない光学的平滑面すなわち鏡面に仕上げるだめの研
摩方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a scratch-free optical coating for the surface of soft crystals such as lead molybdate (PbMo04) single crystals (hereinafter abbreviated as PbMoO4 crystals) used in acousto-optic devices such as ultrasonic light polarizers. The present invention relates to a polishing method for finishing a smooth surface, that is, a mirror surface.

P b FT’lOO<結晶を音響光学素子として使用
するためには、レーザ光の透過や超音波発揚に対して支
障のないスクラッチフリーの鏡面が要求されているが、
PbMoO4結晶は人工的に開発されてから日がまだ浅
いだめ、鏡面加工技術の研究はほとんどみあたらない。
P b FT'lOO< In order to use a crystal as an acousto-optic element, a scratch-free mirror surface is required that does not interfere with the transmission of laser light or the emission of ultrasonic waves.
Since PbMoO4 crystals have only recently been artificially developed, there has been little research into mirror finishing technology.

PbMo0a結晶と性質の似かよっだ光学素子用結晶例
えばTe O,の研摩方法として、従来ラッピング工程
とピッチ研摩工程を組合せた方法が行なわれていΣ。す
なわち、AJ、O,やSiCなどの砥粒と水や油などの
液体を混合したラップ剤を用いてガラスや鋳鉄などの板
上で機械的に研摩し寸法や平坦度を修正するラッピング
工程とCeO,やFe、O,などの砥粒と、水や油など
の液体を混合したボリシ剤を用いてピッチ板上で鏡面加
工するポリシング工程である。これらの研摩方法のうち
、水を用いた加工方法をPb Mo O4結晶に適用し
たところ、ラッピング工程は何ら支障なく行なわれたが
、ポリシング工程ではスクラッチのない鏡面が得られな
かった。
Conventionally, a method combining a lapping process and a pitch polishing process has been used as a method for polishing crystals for optical elements, such as Te 2 O, which have properties similar to PbMo0a crystals. In other words, the lapping process involves mechanically polishing a glass or cast iron plate using a lapping agent that is a mixture of abrasive grains such as AJ, O, or SiC and liquids such as water or oil to correct the dimensions and flatness. This is a polishing process in which mirror polishing is performed on a pitch plate using a polishing agent that is a mixture of abrasive grains such as CeO, Fe, O, etc., and a liquid such as water or oil. Among these polishing methods, when the processing method using water was applied to Pb Mo O 4 crystal, the lapping process was performed without any problems, but a scratch-free mirror surface could not be obtained in the polishing process.

この原因は、明らかではないが、結晶の潮解性や融点の
差によシ加エメカニズムが異なっていると考えられる。
The reason for this is not clear, but it is thought that the curing mechanism is different due to the difference in deliquescent properties and melting points of the crystals.

即ち、Tea、結晶の場合は、潮解性があるだめ結晶表
面における硬さは結晶自体の硬さくモース硬度:5)よ
シもがなシ軟かくなっておシ、結晶と同程度の硬さを有
するCeO,やFe、O,砥粒(モース硬度二6)でも
塑性流動作用による加工が進行するのに対して、PbM
oO4結晶(モース硬度:3)の場合は、潮解性もなく
融点も1060″c(TeO,(7)融点は733′c
)とかなシ高いため、塑性流動現象が生じないので鏡面
が得られないと推察される。
In other words, in the case of Tea, crystals have deliquescent properties, so the hardness at the surface of the crystal is the hardness of the crystal itself, Mohs hardness: Even with CeO, Fe, O, abrasive grains (Mohs hardness 26), processing proceeds due to plastic flow action, whereas PbM
In the case of oO4 crystal (Mohs hardness: 3), it is not deliquescent and has a melting point of 1060'c (TeO, (7) melting point is 733'c
), it is assumed that a mirror surface cannot be obtained because the plastic flow phenomenon does not occur.

なお油を用いた加工方法は、スクラッチのない鏡面が得
られるが、加工後の結晶の洗浄やボリシ剤の廃棄など作
業性が悪い欠点がある。
Processing methods using oil can provide mirror surfaces without scratches, but they have drawbacks such as poor workability, such as cleaning of crystals after processing and disposal of polishing agents.

本発明の目的は、上記事情に鑑みてなされたもので、硬
度の高いダイヤモンド砥粒の先端による微小切削作用に
よシスクラッチのない鏡面が容易に得られる軟質結晶の
研摩方法を提供することにある。
The object of the present invention was made in view of the above circumstances, and is to provide a method for polishing soft crystals that can easily obtain a mirror surface without scratches through the micro-cutting action of the tips of highly hard diamond abrasive grains. be.

以下、本発明による実施例をPbMoO4結晶について
説明する。
Examples according to the present invention will be described below using PbMoO4 crystals.

実施例1 pl)Mo04.結晶素材を例えば内周刃切断砥石によ
り 10x20X30朋の寸法のブロック体に切断する
Example 1 pl)Mo04. The crystal material is cut into blocks with dimensions of 10 x 20 x 30 mm, for example, using an internal cutting wheel.

このブロック体の各表面における切断歪層と表面の凹凸
をラッピングによシ約60μm除去し、表面あらさ1.
0μm程度の平坦な梨地面にする。このラッピングは例
えば粒径5μmのSIC砥粒と水を混合したラップ剤を
用いてSn板上で行なう。ラッピングによシ生じた表面
あらさをダイヤモンド1μm砥粒を純水に1.3%(重
量比)程度混合したボリシ剤を用いて、同心円溝付Sn
板上でボリシングして約20μm除去する。ポリシング
面は目視では表面あらさ0.01〜0.02μmの鏡面
になるが微小なスクラッチが無数に存在している。次に
ボリシング面に生じているスクラッチを、ダイヤモンド
1μm砥粒を純水で1.3%に希釈したボリシ剤を用い
て、例えば格子溝付に一3ピッチ板上で研摩し約6μm
除去する。このときの表面は微小なスクラッチが面画シ
数本の鏡面が達成されてお勺、音響光学素子の加工面と
して十分に使用可能であった。
The cutting strain layer and surface irregularities on each surface of this block body were removed by approximately 60 μm by lapping, and the surface roughness was reduced to 1.
Create a flat pear surface with a thickness of about 0 μm. This lapping is performed on the Sn plate using, for example, a lapping agent that is a mixture of SIC abrasive grains with a particle size of 5 μm and water. The surface roughness caused by lapping can be removed by using a polishing agent containing 1 μm diamond abrasive grains mixed with pure water at about 1.3% (weight ratio).
Approximately 20 μm is removed by boring on the plate. Visually, the polished surface has a mirror surface with a surface roughness of 0.01 to 0.02 μm, but there are countless minute scratches. Next, the scratches occurring on the boring surface are polished to about 6 μm using a polishing agent made by diluting 1 μm diamond abrasive grains to 1.3% with pure water, for example, on a 13-pitch plate with lattice grooves.
Remove. At this time, the surface had a mirror surface with only a few minute scratches and was fully usable as a processed surface for acousto-optic devices.

実施例2 PbMoO,結晶素材から切断されたブロック体をラッ
ピング工程を経てポリシング工程まで実施例1と同様の
方法で、研摩する。次にボリシング面に生じているスク
ラッチをダイヤモンド1μm砥粒を純水で1.3係に希
釈したボリシ剤を用いて、例えは格子溝付に一3ピッチ
板上で研摩し約4μm除去する。この後、ダイヤモンド
砥粒を含んだボリシ剤の供給を停止して、純水のみを供
給しながら上記に一3ピッチ板上で研摩し、約1〜2μ
n1除去する。このときの表面は、微小なスクラッチが
全くない鏡面が達成され、音響光学素子の加工面として
最良の表面が得られた。また前記実施例1のようにダイ
ヤモンド砥粒によるピッチ研摩の加工量が6μmの場合
でも純水のみによるピッチ研摩をさらに行なうことによ
シスクラッチが全くない鏡面が達成された。
Example 2 A block body cut from a PbMoO crystal material is polished in the same manner as in Example 1 through a lapping process and a polishing process. Next, about 4 μm of scratches generated on the boring surface are removed by polishing on a 13-pitch plate with lattice grooves, for example, using a polishing agent prepared by diluting 1 μm diamond abrasive grains with pure water to a ratio of 1.3. After this, the supply of the polishing agent containing diamond abrasive grains was stopped, and while supplying only pure water, the above-mentioned surface was polished on a 13-pitch plate to approximately 1 to 2 μm.
Remove n1. At this time, a mirror surface with no minute scratches was achieved, and the best surface for processing an acousto-optic element was obtained. Further, even when the pitch polishing amount using diamond abrasive grains was 6 μm as in Example 1, a mirror surface with no cis scratches was achieved by further performing pitch polishing using only pure water.

上記実施例においては、PbMoO4結晶の面方位につ
いては何も触れなかったが(100) 、 (010)
In the above example, nothing was mentioned about the plane orientation of the PbMoO4 crystal, but (100) and (010)
.

(001)面はもちろん他の面についても同様に鏡面加
工が達成されている。
Mirror finishing has been achieved not only on the (001) surface but also on other surfaces.

また、上記実施例においては、PbMoO4結晶の場合
を述べたが、他の軟質結晶材料に対しても本発明は応用
できる可能性がある。
Further, in the above embodiment, the case of PbMoO4 crystal was described, but the present invention may be applicable to other soft crystal materials.

以上述べたように本発明によれば、従来の研摩技術では
困難であっだPb Mo 04結晶の鏡面加工が容易に
達成されると共にPbMoO4結晶と類似した組成や性
質の結晶拐料を用いた音響光学素子の製作にとって極め
て有効な研摩技術である。
As described above, according to the present invention, mirror polishing of PbMoO4 crystal, which was difficult with conventional polishing techniques, can be easily achieved, and acoustic polishing using a crystal polishing material having a composition and properties similar to those of PbMoO4 crystal can be achieved. This is an extremely effective polishing technique for manufacturing optical elements.

Claims (1)

【特許請求の範囲】 1、素材結晶から所定の形状に切断された後、機械的に
ラッピング仕上げされたブロック結晶体の表面を、下記
の工程(1) 、 (2)の順に従って鏡面加工するこ
とを特徴とする軟質結晶の研摩方法。 (1)軟質金属のポリシャと水溶性ダイヤモンド砥粒の
組合せを用いたポリシング工程。 (2)  ピッチポリシャと水溶性ダイヤモンド砥粒の
組合せを用いたピッチ研摩工程。 2、素材結晶から所定の形状に切断された後、機械的に
ラッピング仕上げされたブロック結晶体の表面を、下記
の工程(1) 、 (2) 、 (3)の順に従って鏡
面加工することを特徴とする軟質結晶の研摩方法。 (1)  軟質金属のポリシャと水溶性ダイヤモンド砥
粒の組合せを用いたポリシング工程。 (2)  ピッチポリシャと水溶性ダイヤモンド砥粒の
組合せを用いたピッチ研摩工程。 (3)ダイヤモンド砥粒が表面に埋込まれた構造のピッ
チポリシャと純水の組合せを用いた水研摩工程。
[Claims] 1. After cutting the raw material crystal into a predetermined shape, the surface of the mechanically wrapped block crystal is mirror-finished according to the following steps (1) and (2) in order. A method for polishing soft crystals characterized by the following. (1) A polishing process using a combination of a soft metal polisher and water-soluble diamond abrasive grains. (2) Pitch polishing process using a combination of pitch polisher and water-soluble diamond abrasive grains. 2. After cutting the raw crystal into a predetermined shape, the surface of the mechanically wrapped block crystal is mirror-finished according to the following steps (1), (2), and (3). Characteristic soft crystal polishing method. (1) A polishing process using a combination of a soft metal polisher and water-soluble diamond abrasive grains. (2) Pitch polishing process using a combination of pitch polisher and water-soluble diamond abrasive grains. (3) A water polishing process using a combination of a pitch polisher with diamond abrasive grains embedded in its surface and pure water.
JP57126175A 1982-07-20 1982-07-20 Soft crystal polishing method Granted JPS5919664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57126175A JPS5919664A (en) 1982-07-20 1982-07-20 Soft crystal polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57126175A JPS5919664A (en) 1982-07-20 1982-07-20 Soft crystal polishing method

Publications (2)

Publication Number Publication Date
JPS5919664A true JPS5919664A (en) 1984-02-01
JPH0579462B2 JPH0579462B2 (en) 1993-11-02

Family

ID=14928532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57126175A Granted JPS5919664A (en) 1982-07-20 1982-07-20 Soft crystal polishing method

Country Status (1)

Country Link
JP (1) JPS5919664A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61252060A (en) * 1985-04-30 1986-11-10 Matsushita Electric Ind Co Ltd Polishing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS597556A (en) * 1982-07-07 1984-01-14 Agency Of Ind Science & Technol Transparent optical component for carbon dioxide gas laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS597556A (en) * 1982-07-07 1984-01-14 Agency Of Ind Science & Technol Transparent optical component for carbon dioxide gas laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61252060A (en) * 1985-04-30 1986-11-10 Matsushita Electric Ind Co Ltd Polishing method
JPH0551427B2 (en) * 1985-04-30 1993-08-02 Matsushita Electric Ind Co Ltd

Also Published As

Publication number Publication date
JPH0579462B2 (en) 1993-11-02

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