JPS59195840U - load drive circuit - Google Patents
load drive circuitInfo
- Publication number
- JPS59195840U JPS59195840U JP1983089953U JP8995383U JPS59195840U JP S59195840 U JPS59195840 U JP S59195840U JP 1983089953 U JP1983089953 U JP 1983089953U JP 8995383 U JP8995383 U JP 8995383U JP S59195840 U JPS59195840 U JP S59195840U
- Authority
- JP
- Japan
- Prior art keywords
- input terminal
- supplied
- drive circuit
- load drive
- load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electronic Switches (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の負荷駆動回路の構成を示す回路図、第２
図はその正常時における各部電圧を示す図、第３図はそ
の負荷ンヨート時の各部電圧を示す図、・第４図は本考
案に係る負荷駆動回路の一実施例の構成を示す回路図、
第５図はその正常動作時の各部電圧を示す図、第６図は
その負荷ショー゛ト時の各部電圧を示す図、第７図は同
回路における半導体駆動素子に流れる電流を従来と比較
して示す図、第８図は同半導体駆動素子の消費電力と破
壊限界時間の相関関係を示す図、第９図は同回路の構成
要素を同一半導体基板に集積化した場合の構造を示す素
子断面図である。
１・・・・・・入力端子、２・・・・・・昇圧回路、３
・・・・・・ＭＯＳ）ランジスタ、４・・・・・・負荷
、５・・・・・・入力抵抗、６・・・・・・ツェナダイ
オード、ＶＤＤ・・・・・・電源電圧、■。、・・・・
・・ゲート・ソース間電圧。
−杢１ ・
１．斗 ゝ１ｔ−７
、−１
１３７３Figure 1 is a circuit diagram showing the configuration of a conventional load drive circuit;
The figure is a diagram showing the voltages of various parts during normal operation, FIG. 3 is a diagram showing the voltages of various parts when the load is on, and FIG. 4 is a circuit diagram showing the configuration of an embodiment of the load drive circuit according to the present invention.
Figure 5 shows the voltage at each part during normal operation, Figure 6 shows the voltage at each part during load short, and Figure 7 compares the current flowing through the semiconductor drive element in the same circuit with the conventional one. Figure 8 is a diagram showing the correlation between the power consumption and destruction limit time of the same semiconductor drive element, and Figure 9 is a cross section of the element showing the structure when the components of the same circuit are integrated on the same semiconductor substrate. It is a diagram. 1... Input terminal, 2... Boost circuit, 3
...MOS) transistor, 4...Load, 5...Input resistance, 6...Zena diode, VDD...Power supply voltage, ■ . ,...
...Gate-source voltage. -Heather 1 ・ 1. Dou ゝ1t-7, -1 1373
Claims (1)
圧する昇圧回路と； 所定の入力抵抗を介して信号入力端子に供給される前記
昇圧回路の出力でオン・オフ制御され、かつフォロア接
続で負荷を駆動する半導体駆動素子と； 前記半導体駆動素子の前記信号入力端子と接地側端子と
の間に接続され、両端子間電圧を一定に保格する定電圧
素子とを具備することを特徴とする負荷駆動回路。[Claims for Utility Model Registration] An input terminal to which a binary signal for switching control is supplied; A booster circuit that boosts the binary signal supplied to the input terminal to a level higher than the power supply voltage; Through a predetermined input resistor. a semiconductor drive element that is ON/OFF controlled by the output of the booster circuit supplied to a signal input terminal and drives a load with a follower connection; connected between the signal input terminal and the ground side terminal of the semiconductor drive element; and a constant voltage element that maintains a constant voltage between both terminals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983089953U JPS59195840U (en) | 1983-06-13 | 1983-06-13 | load drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983089953U JPS59195840U (en) | 1983-06-13 | 1983-06-13 | load drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59195840U true JPS59195840U (en) | 1984-12-26 |
Family
ID=30219850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1983089953U Pending JPS59195840U (en) | 1983-06-13 | 1983-06-13 | load drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59195840U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01196913A (en) * | 1988-01-31 | 1989-08-08 | Nec Corp | Output overcurrent limit circuit |
| JPH01290265A (en) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | Mos type semiconductor device |
| JPH0252521A (en) * | 1988-08-17 | 1990-02-22 | Hitachi Ltd | Cmos output circuit |
| WO2008069129A1 (en) * | 2006-12-06 | 2008-06-12 | Rohm Co., Ltd. | Drive circuit and semiconductor device using the same |
| JP2011199141A (en) * | 2010-03-23 | 2011-10-06 | Nissan Motor Co Ltd | Semiconductor device |
| EP3872847A1 (en) * | 2020-02-28 | 2021-09-01 | Infineon Technologies AG | Semiconductor device with insulated gate transistor cell and rectifying junction |
-
1983
- 1983-06-13 JP JP1983089953U patent/JPS59195840U/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01196913A (en) * | 1988-01-31 | 1989-08-08 | Nec Corp | Output overcurrent limit circuit |
| JPH01290265A (en) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | Mos type semiconductor device |
| JPH0252521A (en) * | 1988-08-17 | 1990-02-22 | Hitachi Ltd | Cmos output circuit |
| WO2008069129A1 (en) * | 2006-12-06 | 2008-06-12 | Rohm Co., Ltd. | Drive circuit and semiconductor device using the same |
| JP2011199141A (en) * | 2010-03-23 | 2011-10-06 | Nissan Motor Co Ltd | Semiconductor device |
| EP3872847A1 (en) * | 2020-02-28 | 2021-09-01 | Infineon Technologies AG | Semiconductor device with insulated gate transistor cell and rectifying junction |
| US11588048B2 (en) | 2020-02-28 | 2023-02-21 | Infineon Technologies Ag | Semiconductor device with insulated gate transistor cell and rectifying junction |
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