JPS59193030A - Processor - Google Patents

Processor

Info

Publication number
JPS59193030A
JPS59193030A JP6545883A JP6545883A JPS59193030A JP S59193030 A JPS59193030 A JP S59193030A JP 6545883 A JP6545883 A JP 6545883A JP 6545883 A JP6545883 A JP 6545883A JP S59193030 A JPS59193030 A JP S59193030A
Authority
JP
Japan
Prior art keywords
wafer
chamber
cleaning
gas
ozone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6545883A
Other languages
Japanese (ja)
Inventor
Tetsuya Takagaki
哲也 高垣
Hiroshi Maejima
前島 央
Hiroto Nagatomo
長友 宏人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6545883A priority Critical patent/JPS59193030A/en
Publication of JPS59193030A publication Critical patent/JPS59193030A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a wafer dry cleaning device having a high processing effect by a method wherein the device to perform dry cleaning of a semiconductor wafer is constructed of a process chamber having inside an ultraviolet light source, and moreover to generate ozone by feeding O2 gas, and a carrying in and out part of the wafer therefrom is constructed of taper type wafer pads to come in contact with the circumference of the wafer in dotted manner. CONSTITUTION:A cleaning chamber 6 and a cleaning supplementing chamber 7 are provided adjoining mutually on an electric control part 5, a gas feed opening 8 is dug to the cleaning chamber 6, and an O2 gas source 12 and an N2 gas source 13 are connected thereto through a filter 11. Moreover an exhaust vent 16 is provided to the cleaning supplementing chamber 7, and processed gas is exhausted therefrom. At this construction, a long sideways ?-shape fork 18 constructing a carrying in and out part 3 is made to advance and retreat from the chambers 7, 6, and in the chamber 6, ultraviolet rays radiated from lamps 9 are irradiated to the surface and the back of a wafer 4 on wafer pads 25 provided at the tip thereof, in the chamber 7, static electricity is removed by lamps 14, and at the same time, rereaction of ozone is removed using lamps 15. At this time, the wafer pads 25 are constructed of a pair of holders 26a, 26b having the taper faces, and the wafer 4 is supported by dots.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は紫外線を利用した処理装置に関し、特に半導体
ウェーハのドライ洗浄に用いて最適な洗浄装置に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a processing apparatus that utilizes ultraviolet light, and particularly to a cleaning apparatus that is optimal for dry cleaning of semiconductor wafers.

〔背景技術] 、 半導体装量の製造工程において、半導体ウェーハに
種々の処理全施すとウェーハ土に有機物が固着すること
があり、この有機物を十分に除去せずに熱処理にほどこ
すと有機イオンがウェーハ内部に浸入して、半導体の特
性を悪化するおそれがある。このため、この有機物を除
去する洗浄作用が必要とされ、種々の洗浄装置が提案さ
れているが、中でも紫外i%61?c−利用して酸素ガ
スからオゾン?生広し、このオゾンにより有機物音ウェ
ーハ表面から離反させるドライ洗浄装置が好ましいもの
とこれている。
[Background Art] In the manufacturing process of semiconductor components, when semiconductor wafers are subjected to various treatments, organic substances may adhere to the wafer soil.If heat treatment is performed without sufficiently removing these organic substances, organic ions may be formed. There is a risk that it may enter the inside of the wafer and deteriorate the characteristics of the semiconductor. For this reason, a cleaning action to remove this organic matter is required, and various cleaning devices have been proposed, among them ultraviolet i%61? c- Utilize oxygen gas to ozone? It is preferable to use a dry cleaning apparatus in which the ozone is used to spread the organic material and separate it from the surface of the wafer.

しかし々がら、これまで使用されているこの種の装置で
は、洗浄室内にクリーンユニ1.ト全通した大気を導入
し、この大気に紫外線を照射することにより大気中の酸
素からオゾンを生放しているため、大気中に含まれてい
る種々のイオン性ガスをそのまま洗浄室内にまき込み、
初期の洗浄効果が得られないことが多い。
However, in this type of equipment that has been used so far, there is only one clean unit in the cleaning chamber. By introducing a fully ventilated atmosphere and irradiating this atmosphere with ultraviolet rays, ozone is released from the oxygen in the atmosphere, so various ionic gases contained in the atmosphere are directly drawn into the cleaning chamber. ,
The initial cleaning effect is often not achieved.

また、これまでの装置では被洗浄物であるウェーハゲ、
洗浄室内に出入自在なガレ2.ト上に乗せて洗浄7行な
っているため、パレ2.)トに密接するウェーハの裏面
にオゾンが有効に作用せずウェーハ裏面の洗浄に行なう
ことができないと旨う問題がある。
In addition, with conventional equipment, wafers and
Garage that can be freely accessed and removed from the cleaning room 2. Because it was washed 7 times on the tray, the pallet 2. ) There is a problem in that ozone does not effectively act on the back surface of the wafer, which is in close contact with the wafer, and the back surface of the wafer cannot be cleaned.

〔発明の目的〕[Purpose of the invention]

本発明の目的は洗浄などの処理室内への不必要ガイオン
性ガスの混入全防止する一方で被処理物の裏面の洗浄な
どの表面処理を可能にし7、これにより高精度々処理を
行なうことができる処理装置?提供することにある。
The purpose of the present invention is to completely prevent the intrusion of unnecessary gaionic gas into the processing chamber during cleaning, etc., while also making it possible to perform surface treatment such as cleaning the back side of the workpiece7, thereby making it possible to perform high-precision processing. A processing device that can do it? It is about providing.

また本発明の他の目的は処理室内で生成されるオゾンが
均等に被処理物に作用して処理効果音高めることができ
る処理装置全提供することにある。
Another object of the present invention is to provide a processing apparatus in which ozone generated within a processing chamber can evenly act on the object to be processed, thereby enhancing processing sound effects.

本発明の前記ならびにそのほかの目的と新規な%像は、
本明細書の記述および添付171面からあきらかになる
であろう。
The above and other objects and novel features of the present invention are as follows:
It will be clear from the description of this specification and attached page 171.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち代表的なものの概要
を簡単に訝明すれは、下肥のとおりである。
A brief overview of the representative inventions disclosed in this application is as described below.

すなわち、処理室内に酸素を供給してこれケオゾン化す
る一方、被処理物は周縁部のみで支持してその表裏面に
オゾンが作用する構成とすることにより、大更中に含ま
れるイオン性ガスの混入ケ防止し、オゾンによる被処理
物の表裏面の処理効果の向上全達成するものである。
In other words, while supplying oxygen into the processing chamber and turning it into keozonate, the object to be processed is supported only at its periphery and ozone acts on its front and back surfaces. This prevents the contamination of ozone and improves the effect of ozone on the front and back surfaces of the object to be treated.

〔実施例〕〔Example〕

第1図ないし第4図は本発明の一実施例ケ示し、図1に
おいて2は表面処理装置である洗浄装[1の本体、3は
被洗浄物である半導体ウェーハ4全洗浄装置本体2に搬
入、搬出する搬送部である。前記本体2は搬送部3を上
置した電気制御部5上に洗浄室6を有し、かつこの洗浄
室6に隣り合って洗浄補助室7を般けている。この洗浄
室6はウェーハ4の出入口を除いては気密に形反してお
りガス供給口8と紫外線エネルギ源としてのランプ9を
配設している。ガス供給口8にはフィルタ11會通して
酸素ガス源12と窒素ガス源13全接続して洗浄室6内
にとわらのガスを通流できる。また、紫外線ランプ9は
搬入されるウエーノ・4の表、裏面に夫々対向するよう
に適宜間隔おいて列設している。一方、前記洗浄補助室
7内には上側に静電除去用の電極14ケ般け、下側には
オゾンを再反応消去するための紫外線ランプ15を配設
し、更にその下端には排クロ16ケ設けている。
1 to 4 show one embodiment of the present invention. In FIG. 1, 2 is the main body of a cleaning device [1] which is a surface treatment device, and 3 is a semiconductor wafer that is an object to be cleaned. This is a transport section that carries in and out. The main body 2 has a cleaning chamber 6 on an electric control section 5 on which a conveying section 3 is placed, and an auxiliary cleaning chamber 7 is provided adjacent to the cleaning chamber 6. The cleaning chamber 6 is airtight except for the entrance and exit of the wafer 4, and is equipped with a gas supply port 8 and a lamp 9 as a source of ultraviolet energy. A filter 11 is passed through the gas supply port 8, and an oxygen gas source 12 and a nitrogen gas source 13 are all connected to the gas supply port 8, so that straw gas can flow into the cleaning chamber 6. Further, the ultraviolet lamps 9 are arranged in rows at appropriate intervals so as to face the front and back surfaces of the wafers 4 being carried in, respectively. On the other hand, inside the cleaning auxiliary chamber 7, an electrode 14 for removing static electricity is arranged on the upper side, an ultraviolet lamp 15 for re-reacting and eliminating ozone is arranged on the lower side, and furthermore, an ultraviolet lamp 15 for re-reacting and eliminating ozone is arranged at the lower end. There are 16 locations.

前記搬送部3は、第2図のようにウェーハ4の搬出入方
向に延設した一対の平行ガイド軸17.17を前記電気
制御部5上に設置している。そして、このガイド軸17
.17上には横長コ字状全したフォーク18の下端を固
着した可動テーブル19全ガイド軸17.17の延設方
向に往復移動できるように支持している。即ち、第3図
に示すように、前記ガイド軸17、]7は丸棒状に形放
され、可動テーブル19に軸支した複数個(一般には4
個)のローラ20′(+−ガイド軸17.17の内側に
転接した構成としている。また、ガイド軸17.17の
長さ方向両端の一方に固設したモータ21の回転軸に固
着したプーリ22と、反対端に軸支したプーリ23との
間Ki装したベルト24の一部?可動テーブル19に連
結し、モータ21の駆動によって可動テーブル19を移
動できる。
The transfer section 3 has a pair of parallel guide shafts 17, 17 installed on the electric control section 5, extending in the direction in which the wafers 4 are carried in and out, as shown in FIG. And this guide shaft 17
.. A movable table 19 to which the lower end of a fork 18 having an oblong U-shape is fixed is supported on 17 so as to be able to reciprocate in the direction of extension of the guide shaft 17.17. That is, as shown in FIG.
The roller 20' (+-) is in rolling contact with the inside of the guide shaft 17.17.In addition, the roller 20' (+-) is in rolling contact with the inside of the guide shaft 17.17. A part of the belt 24 mounted between the pulley 22 and a pulley 23 pivotally supported at the opposite end is connected to the movable table 19, and the movable table 19 can be moved by driving the motor 21.

前記フォークIBの先端には、本例では2個のウェーハ
受け25.25全並役し、各1枚のウェーハ4.4ケ水
平に支持している。第4図に一方全図示するように、こ
れらウェーハ受け25(25)には−苅のホルダ26a
、261)’iウェーハ径よりも若干小さい間隔で固定
支持している。各ホルダ26a、26bは中間部を削放
して両端にウェーハ当接部27a、27aと27b、 
271)?形取しており、しかもこれらつ工−ハ当接部
27a、27aと27’b、27’bは互に対向する面
金テーパ面として形広してウェーハ4の周縁(特に下縁
)に点接触してこれを支持している。これにより、ウェ
ーハ4は裏面がフォーク受け25に接触せず、表、裏面
が共に開放された状態で支持されることになる。
At the tip of the fork IB, in this example, two wafer receivers 25.25 are arranged side by side, each horizontally supporting 4.4 wafers. As fully shown in FIG. 4, these wafer receivers 25 (25) have - holder 26a
, 261)'i They are fixedly supported at intervals slightly smaller than the wafer diameter. Each holder 26a, 26b has a middle part cut off and wafer contact parts 27a, 27a and 27b at both ends.
271)? In addition, the contact parts 27a, 27a and 27'b, 27'b are shaped as tapered surfaces facing each other, and are formed on the peripheral edge (especially the lower edge) of the wafer 4. This is supported by point contact. As a result, the back surface of the wafer 4 does not come into contact with the fork receiver 25, and the wafer 4 is supported with both the front and back surfaces open.

以上の構故によれは、洗浄室6内に酸素ガスと9索ガス
全供給すれは、紫外線ランプ9の紫外エネルギによって
酸素はオゾン化される。一方、モ−夕21’(z駆動し
てブー+122.23およびベルト24にて可動テーブ
ル19を前進させれば、これと一体にフォーク18も前
進され、ウェーハ4は補助室7を通って洗浄室6内に搬
入され、ここでオゾンによる洗浄が行なわれる。このと
き、室6内には大気が侵入されていないのでイオン性ガ
スは存在せず、汚染のない洗浄が行なわれる。また、ウ
ェーハ4はホルダ26a、 26bに周縁が支持されて
表、裏面が共に開放されているので両方の面?有効に洗
浄することができる。更にオゾンはガスと一諸に洗浄室
6から排気口16のある補助室7に向かって通流するの
で、ウェーハ4面に均等に当り、均一な洗浄ケ行なうこ
とができる。
According to the above-mentioned structure, when all the oxygen gas and the 9-wire gas are supplied into the cleaning chamber 6, the oxygen is converted into ozone by the ultraviolet energy of the ultraviolet lamp 9. On the other hand, if the movable table 19 is moved forward by the movable table 19 by driving the motor 21' (Z) using the boot +122. The wafer is carried into chamber 6, where it is cleaned with ozone.At this time, since the atmosphere is not infiltrated into chamber 6, there is no ionic gas, and cleaning is performed without contamination. 4 is supported at its periphery by the holders 26a and 26b, and both the front and back surfaces are open, so both surfaces can be effectively cleaned.Furthermore, the ozone and the gas are passed from the cleaning chamber 6 to the exhaust port 16. Since the current flows toward a certain auxiliary chamber 7, it evenly hits the four surfaces of the wafer, making it possible to perform uniform cleaning.

補助室7に通流したオゾンは補助室7内におりて再反応
して酸素ガスとなり、窒素ガスと共に排タロ16から排
出される。
The ozone that has flowed into the auxiliary chamber 7 enters the auxiliary chamber 7, reacts again, becomes oxygen gas, and is discharged from the exhaust gas 16 together with nitrogen gas.

洗浄後はモータ21を逆方向に作動して可動テーブル1
9會後退させれば、フォーク18も一体に後退しウェー
ハ4は洗浄室6から搬出される。
After cleaning, move the movable table 1 by operating the motor 21 in the opposite direction.
When the fork 18 is moved back nine times, the fork 18 is also moved back together, and the wafer 4 is carried out from the cleaning chamber 6.

搬出の際ウェーハ4は補助室7において靜W除去され、
埃等の付着が防止される。
During unloading, the wafer 4 is removed in the auxiliary chamber 7,
Adhesion of dust etc. is prevented.

なお、前記した一連の工程においても、可動テーブル1
9はガイド軸17.17上をローラ2゜によって転動す
る構成であるため、摩耗粉(埃)等が発生することもな
く、埃環境?良好に併持し、洗浄室6内への埃の侵入全
抑制することもできる。
In addition, in the series of steps described above, the movable table 1
9 is configured to roll on a guide shaft 17.17 by a roller 2°, so there is no generation of abrasion powder (dust), and it can be used in a dusty environment. In addition, it is possible to completely suppress dust from entering the cleaning chamber 6.

なお、洗浄の他に工、チングなどの表面処理にも本発明
は適用できるものである。
In addition to cleaning, the present invention can also be applied to surface treatments such as machining and ching.

〔効果〕〔effect〕

(1)洗浄室内では大気を導入することなく酸素ガス源
から供給された酸素ガスによってオゾン?生成して洗浄
7行なっているので、大気中のイオン性ガスが混入され
ることはなく高洗浄度のドライ洗浄ケ行なうことができ
る。
(1) In the cleaning room, ozone is produced by oxygen gas supplied from an oxygen gas source without introducing atmospheric air. Since the product is generated and washed seven times, it is possible to perform dry cleaning with a high degree of cleanliness without the ionic gas in the atmosphere being mixed in.

(2)オゾンが洗浄室から補助室に向Z・って通流され
る際に被洗浄物の表面に沿って通流するので、表面?均
一に洗浄することができる。
(2) When ozone flows from the cleaning chamber to the auxiliary chamber in the Z-direction, it flows along the surface of the object to be cleaned. Can be cleaned evenly.

(3)被洗浄物であるウェーハは、ホルダに形+1&し
た当接部におりてその周縁において保持され、ウェーハ
表、裏面が共に開放状態とされているので、表、裏面ン
同時に洗浄でき、洗浄効果全高めると共に効茎の向上も
連取てきる。
(3) The wafer, which is the object to be cleaned, is held at the periphery by the abutting part shaped like the holder, and both the front and back sides of the wafer are open, so the front and back sides can be cleaned at the same time. It not only enhances the cleaning effect, but also improves the effectiveness of the stems.

以上本発明者によってなされた発明全実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で糧々変更可
能であることはいうまでもない。たとえば、酸素ガス等
の供給口は洗浄室の上下に配置してもよく、またウェー
ハ受けは3個以上を縦方向に並設してもよい。更に可動
テーブルの駆動力にはシリンダ機構を採用してもよい。
Although the invention has been specifically explained above based on all the embodiments of the invention made by the present inventor, it is to be noted that the present invention is not limited to the above embodiments, and can be modified as much as possible without departing from the gist thereof. Not even. For example, supply ports for oxygen gas, etc. may be arranged above and below the cleaning chamber, and three or more wafer receivers may be arranged in parallel in the vertical direction. Furthermore, a cylinder mechanism may be employed for the driving force of the movable table.

〔利用分野〕[Application field]

以上の説明では主として本発明者によって々された発明
をその背月となった利用分野である半導体ウェーハの洗
浄装置に適用した場合について説明したが、それに限定
されるものではなく、他の物品の洗浄、特に板状物品の
洗浄にも適用することができる。
The above explanation has mainly been about the case where the invention made by the present inventor is applied to a semiconductor wafer cleaning device, which is the field in which the invention was first applied. It can also be applied to cleaning, especially cleaning plate-shaped articles.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の洗浄装置の全体構成全庁す側断面図、 第2図は搬送部の刺視図、 第3図は第2図のmm線拡大断面図、 第4図は第2図の要部の拡大図である。 1・・・洗浄装置、2・・・本体、3・・・搬送部、4
・・・被洗浄物(ウェーハ)、6・洗浄室、7・・洗浄
補助室、8・・・ガス供給口、9・・・紫外線源(紫外
線ランプ)、17・ガイド軸、18・・・フォーク、1
9・・・可動テーブル、21・・・モータ、25・・・
ウェーハ受け、26a、26b−=ホルダ、27a、2
7’b −ウェーハ当接部。 第  1  図 第  3  図 ノブ 2θ 第  4  図
Fig. 1 is a side sectional view of the overall configuration of the cleaning device of the present invention, Fig. 2 is a perspective view of the conveying section, Fig. 3 is an enlarged sectional view along the mm line of Fig. 2, and Fig. 4 is the It is an enlarged view of the main part of the figure. 1...Cleaning device, 2...Main body, 3...Transportation section, 4
...Object to be cleaned (wafer), 6. Cleaning chamber, 7. Cleaning auxiliary chamber, 8. Gas supply port, 9. Ultraviolet source (ultraviolet lamp), 17. Guide shaft, 18. fork, 1
9...Movable table, 21...Motor, 25...
Wafer receiver, 26a, 26b-=holder, 27a, 2
7'b - Wafer contact part. Fig. 1 Fig. 3 Knob 2θ Fig. 4

Claims (1)

【特許請求の範囲】 1、内部に紫外線源を備えると共に酸素ガス會供給して
オゾン全発生させる処理室と、この処理室内に被処理物
を搬出、入できる搬送部とを有し、前記搬送部は被処理
物の周縁のみを支持してその表裏面全開放できるように
構反したことを%徴とする処理装置。 2 処理室は内部に大気全導入しないような気密に近い
構造とし、てなる特許請求の範囲第1項記載の処理装置
。 3、搬送部に設けた被処理物としてのウェーノ・のウェ
ー・〜受けは、ウェー・・周縁に点状に当接するテーパ
状のウェーハ尚接部を有してなる特許請求の範囲第1項
又は第2項記載の処理装置。
[Scope of Claims] 1. It has a processing chamber that is equipped with an ultraviolet light source and that supplies oxygen gas to generate all ozone, and a transport section that can carry out and put the object to be processed into this processing chamber, and The processing equipment is characterized by a structure that supports only the periphery of the object to be processed and allows the front and back sides of the object to be completely opened. 2. The processing apparatus according to claim 1, wherein the processing chamber has a nearly airtight structure that prevents the introduction of all air into the processing chamber. 3. The wafer support provided in the transport section as the workpiece has a tapered wafer contact portion that contacts the wafer periphery in a dotted manner.Claim 1 Or the processing device according to item 2.
JP6545883A 1983-04-15 1983-04-15 Processor Pending JPS59193030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6545883A JPS59193030A (en) 1983-04-15 1983-04-15 Processor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6545883A JPS59193030A (en) 1983-04-15 1983-04-15 Processor

Publications (1)

Publication Number Publication Date
JPS59193030A true JPS59193030A (en) 1984-11-01

Family

ID=13287708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6545883A Pending JPS59193030A (en) 1983-04-15 1983-04-15 Processor

Country Status (1)

Country Link
JP (1) JPS59193030A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125131A (en) * 1984-11-22 1986-06-12 Chlorine Eng Corp Ltd Washing and/or ashing method for ic substrate
JPS61194830A (en) * 1985-02-25 1986-08-29 Dainippon Screen Mfg Co Ltd Organic material removing device for substrate
JPS61222227A (en) * 1985-03-28 1986-10-02 Fujitsu Ltd Method of treating surface of semiconductor substrate
US8056257B2 (en) * 2006-11-21 2011-11-15 Tokyo Electron Limited Substrate processing apparatus and substrate processing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125131A (en) * 1984-11-22 1986-06-12 Chlorine Eng Corp Ltd Washing and/or ashing method for ic substrate
JPS61194830A (en) * 1985-02-25 1986-08-29 Dainippon Screen Mfg Co Ltd Organic material removing device for substrate
JPH0241897B2 (en) * 1985-02-25 1990-09-19
JPS61222227A (en) * 1985-03-28 1986-10-02 Fujitsu Ltd Method of treating surface of semiconductor substrate
US8056257B2 (en) * 2006-11-21 2011-11-15 Tokyo Electron Limited Substrate processing apparatus and substrate processing method

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