JPS59187146U - Semiconductor laser device inspection equipment - Google Patents

Semiconductor laser device inspection equipment

Info

Publication number
JPS59187146U
JPS59187146U JP8306683U JP8306683U JPS59187146U JP S59187146 U JPS59187146 U JP S59187146U JP 8306683 U JP8306683 U JP 8306683U JP 8306683 U JP8306683 U JP 8306683U JP S59187146 U JPS59187146 U JP S59187146U
Authority
JP
Japan
Prior art keywords
semiconductor laser
light
laser device
device inspection
inspection equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8306683U
Other languages
Japanese (ja)
Inventor
尚孝 大塚
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to JP8306683U priority Critical patent/JPS59187146U/en
Publication of JPS59187146U publication Critical patent/JPS59187146U/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

図は本考案による一実施例を示す模型図である。 1:半導体レーザ素子、lA、  IB:共振面、3:
受光素子、4:光学ファイバー。
The figure is a model diagram showing an embodiment of the present invention. 1: Semiconductor laser element, 1A, IB: Resonance surface, 3:
Photodetector, 4: Optical fiber.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 両方の反射面から同質のレーザ光を出射する半導体レー
ザ素子を介して配置され、一方の反射面の出射光を受光
して電流−光出力特性を検知する受光装置と、他方の反
射面の出射光を導いて波長を検知する分光器とを備え、
電流−光出力特性及び波長を同時に測定することができ
ることを特徴とする半導体レーザ素子の検査装置。
A light receiving device is arranged through a semiconductor laser element that emits laser light of the same quality from both reflective surfaces, and detects the current-light output characteristics by receiving the light emitted from one reflective surface, and Equipped with a spectrometer that guides the emitted light and detects the wavelength,
1. A semiconductor laser device inspection device characterized by being capable of simultaneously measuring current-light output characteristics and wavelength.
JP8306683U 1983-05-30 1983-05-30 Semiconductor laser device inspection equipment Pending JPS59187146U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8306683U JPS59187146U (en) 1983-05-30 1983-05-30 Semiconductor laser device inspection equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8306683U JPS59187146U (en) 1983-05-30 1983-05-30 Semiconductor laser device inspection equipment

Publications (1)

Publication Number Publication Date
JPS59187146U true JPS59187146U (en) 1984-12-12

Family

ID=30213025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8306683U Pending JPS59187146U (en) 1983-05-30 1983-05-30 Semiconductor laser device inspection equipment

Country Status (1)

Country Link
JP (1) JPS59187146U (en)

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