JPS59186382A - Hall element - Google Patents

Abstract

PURPOSE:To protect the characteristics of a hall element from deterioration and to obtain favorable adhesive and heat-resisting properties by a method wherein a compound semiconductor layer is provided on a substrate and an electrode pad and the compound semiconductor layer are completely estranged by a lead-out electrode on the layer. CONSTITUTION:A compound semiconductor layer 12 is formed on a thermal oxide film on an insulating substrate 11, a titanium layer 16 and a nickel layer 17 are superposed on the semiconductor layer 12 and a lead-out electrode 13, which is extendedly provided on the substrate 11, is formed. On this lead-out electrode 13 are formed an electrode pad 14 and a fine metal wire 15 bonded with the electrode pad 14 and a hall element is constituted. By this lead-out electrode 13, the electrode pad 14 of gold and the semiconductor layer 12 are completely separated. As a result, the deterioration of characteristics of the hall element due to reaction with gold is prevented and favorable adhesive and heat-resisting properties are obtained by a fact that the titanium layer 16 and the nickel layer 17 have been used as the lead-out electrode 13, thereby stabilizing the characteristics of the hall element.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a Hall element using a compound semiconductor material.

(b) As shown in Figure 1, in the conventional Hall element, a current is passed between the input terminals of a cross-shaped compound semiconductor thin film (1), and a magnetic field is applied in a direction perpendicular to the plane of this thin film (1). difference "
When the magnetic flux density is set, a voltage corresponding to the magnetic flux density is generated at the output terminal, and is used for detecting and measuring magnetism.

Conventional Hall elements are made of insulating substrates such as glass (as shown in Figure 2).
2) Indium antimonide (InSb) on top
A compound semiconductor layer (3) as shown in FIG. A thin metal wire (5) was formed by bonding to the electrode pad (4).

In the Hall element described above, the gold in the electrode band (4) reacts with the indium-antimonide at 300 to 350°C, and the gold enters the compound semiconductor layer (3), deteriorating the characteristics of the Hall element. .

(c) Purpose of the Invention The present invention has been made in view of the above-mentioned conventional drawbacks, and an object thereof is to provide a Hall element that completely eliminates the conventional drawbacks.

In particular, a Hall element having an electrode structure suitable for bonding is realized.

B) Structure of the Invention According to the present invention, as shown in FIG. Take-out electrode (1) made of melting point metal
3) and the electrode pad (14) provided on the extraction electrode (13)l
and a thin metal wire α bonded to the electrode pad (I4)
It is composed of two parts.

(E) Embodiment As shown in FIG. 3, the Hall element according to the present invention uses an insulating substrate (11) in which a thermal oxide film is formed on the main surface of a mirror-finished silicon single crystal substrate with a thickness of 0.2 mm. An indium antimonide (Insb) layer θ is formed on the thermal oxide film of
2) is deposited to a thickness of about 1 μm and heat-treated at about 500° C. to crystallize it. Thereafter, a compound semiconductor layer Oz is formed by photoetching into the cross shape shown in FIG. Form the extraction voltage, pole 03). The extraction electrode (13) is made of a titanium layer (16) with a thickness of about 50 OA and a titanium layer (16) with a thickness of about 5
A 0OA thick nickel layer (17) is formed by vapor deposition. Gold is deposited on the extraction electrode (I3) to form an electrode pad (I4). The electrode pad (14) is formed to overlap with the extraction electrode (13) on the substrate αυ, and is
3), it is completely separated from the compound semiconductor layer 02). A thin metal wire 05) is bonded to the electrode pad (14) for external connection.

According to the above structure, the titanium layer 06 of the extraction electrode (13)
) is active and the compound semiconductor layer (Iz) and the substrate (1υ
Since the nickel layer (17) has high heat resistance, a good heat resistance effect can be obtained. As a result, in the conventional structure shown in FIG. 2, the defective peeling of the electrode pad during wire bonding occurred at about 10 to 30%, but in the structure of the present invention, it was reduced to about 0.1% or less. In addition, in the JIS standard test for soldering heat resistance at 260°C for 10 seconds, the rate of change in Hall output voltage and input/output resistance before and after the test was approximately ±15% at most with the conventional structure, but with the present invention, the rate of change before and after the test was at most ±15%. This can be reduced to about 5%, suppressing characteristic deterioration.

(f) Effect According to the present invention, the extraction electrodes are made of gold electrode pads (I4) with 0 spacings.
Since the metal layer and the compound semiconductor layer α2 are completely separated from each other, deterioration of the characteristics of the Hall element due to reaction with gold can be prevented. Further, since the titanium layer α6) and the nickel layer (17) are used as the extraction electrode (13), a pole element with good adhesiveness and heat resistance and stable characteristics can be obtained.

[Brief explanation of drawings]

FIG. 1 is a top view illustrating the principle of a Hall element, FIG. 2 is a sectional view showing the structure of a conventional Hall element, and FIG. 3 is a sectional view illustrating the Hall element of the present invention. 0υ is a substrate, 0z is a compound semiconductor layer, Q3) is an extraction electrode, 04) is an electrode hat, a9 is a metal Mi wire, a61 is a titanium layer, and αD is a nickel layer.

Claims (1)

[Claims] (1) A compound semiconductor layer provided on a flat substrate, an extraction electrode made of a high melting point metal that partially overlaps the end of the compound semiconductor layer and spreads over the substrate, and an electrode provided to overlap the extraction electrode. A Hall element comprising a pad and a thin metal wire bonded to the electrode node. A Hall element characterized in that the extraction electrode has a two-layer structure of nickel and titanium, and the electrode band is made of gold.