JPS59184537A - Wire bonder with built-in heater - Google Patents

Wire bonder with built-in heater

Info

Publication number
JPS59184537A
JPS59184537A JP58058120A JP5812083A JPS59184537A JP S59184537 A JPS59184537 A JP S59184537A JP 58058120 A JP58058120 A JP 58058120A JP 5812083 A JP5812083 A JP 5812083A JP S59184537 A JPS59184537 A JP S59184537A
Authority
JP
Japan
Prior art keywords
wire
heated
wire bonding
semiconductor device
electrode part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58058120A
Other languages
Japanese (ja)
Inventor
Akihiro Yamamoto
章博 山本
Takeichi Yoshida
吉田　竹一
Yutaka Makino
豊 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58058120A priority Critical patent/JPS59184537A/en
Publication of JPS59184537A publication Critical patent/JPS59184537A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10161—Shape being a cuboid with a rectangular active surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable to efficiently heat the electrode part to be wire-bonded without fusing the solder of a semiconductor device, by blowing heating air from a nozzle to a narrow range. CONSTITUTION:In the heater 10, when a heating wire 14 is heated by the supply of compressed air 18 from the direction of an arrow mark B, said air 18 is heated in a heat insulating tube 13 and then blown out just to the narrow range only in the direction of an arrow mark C from the nozzle 16. Said air 18 blown out strikes within the range of a circle A with the arrangement of the first electrode part 5 and the second one 6 for wire bonding in the semiconductor device 4, and accordingly the part within the range of the circle A is heated in concentration. Thereby, only the first electrode part 5 and the second one 6 for wire bonding by a wire bonding tool 11 are heated, thus enabling the wire bonding.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体装置内に設けられた第１の電極部と第
２の電極部を導電線で結線する際に、半導体装置の電極
部を加熱する加熱装置付きワイヤボンダに関するもので
ある。以下第１の電極部と第２の電極部を導電線で結線
することをワイヤボ２　／、−一：’、 ンディングと呼ぶことにする。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to heating the electrode portion of a semiconductor device when connecting a first electrode portion and a second electrode portion provided in the semiconductor device with a conductive wire. This invention relates to a wire bonder equipped with a heating device. Hereinafter, connecting the first electrode part and the second electrode part with a conductive wire will be referred to as wire bonding.

従来例の構成とその問題点 従来の加熱装置は第１図にその具体構成を示すように、
ヒートブロック１の内部に備えられたヒータ２に導電線
３から電流が流され、ヒータ２が加熱１．その熱がヒー
トブロック１から半導体装置４に伝達することによって
、半導体装置４が加熱されていた。このような構成では
、半導体装置４の意任の位置に設けられた第１の電極部
６と第イヤボンディング工程前の半導体装置４にハンダ
配線された電子部品のハンダが溶融するという欠点を有
していた。またワイヤボンディングをする電極部以外の
部分を加熱するため、ヒータ２の熱効率が低重ものであ
った。Structure of the conventional example and its problems As the specific structure of the conventional heating device is shown in Fig. 1,
A current is applied from a conductive wire 3 to a heater 2 provided inside the heat block 1, and the heater 2 performs heating 1. The semiconductor device 4 was heated by transmitting the heat from the heat block 1 to the semiconductor device 4. Such a configuration has a disadvantage that the first electrode portion 6 provided at an arbitrary position of the semiconductor device 4 and the solder of the electronic component soldered to the semiconductor device 4 before the first ear bonding process melt. Was. Further, since the heater 2 heats a portion other than the electrode portion where wire bonding is performed, the thermal efficiency of the heater 2 is low.

発明の目的 本発明は、上記従来の欠点を解消するものであり、半導
体装置のハンダを溶融させることなく、６外ンデイング
すべき電極部を効率よく加熱できる３７−　・・ ものである。OBJECTS OF THE INVENTION The present invention solves the above-mentioned conventional drawbacks, and is capable of efficiently heating an electrode portion to be soldered without melting the solder of a semiconductor device.

発明の構成 本発明は、ケーシング内に送り込まれた圧縮空気を加熱
する熱源と、加熱された圧縮空気をケーシング外の一方
向のみに吹き出させるノズルを備えた加熱装置付きワイ
ヤボンダで、半導体装置内で電子部品の配線に用いたハ
ンダを溶融させることなく、ワイヤボンディングのため
に加熱の必要な電極部のみが加熱でき、ハンダ配線後に
ワイヤボンディングができるため半導体装置の製造工程
１１＠序の制約を無くシ、ワイヤボンディングすべき電
極部を効率よく加熱できるものである。Structure of the Invention The present invention is a wire bonder equipped with a heating device that is equipped with a heat source that heats compressed air sent into a casing and a nozzle that blows out the heated compressed air in only one direction outside the casing. Only the electrode parts that need to be heated for wire bonding can be heated without melting the solder used in the wiring of electronic components, and wire bonding can be performed after soldering, eliminating restrictions on the manufacturing process of semiconductor devices. Second, it is possible to efficiently heat the electrode portion to be wire-bonded.

実施例の説明 以下に１本発明の一実施例を第２〜３図にもとづいて説
明する。４は半導体装置、６は第１の電極部、６は第１
の電極部５とワイヤボンディングされる第２の電極部、
７は配線部、８は配線部７にハンダ配線された電子部品
、Ａの破線の円はワイヤボンディングに必要な加熱する
範囲、９は半導体装置を装着するプレート、１０はＡの
円内のみを半導体装置４から離れたところから加熱する
加熱装置、１１はワイヤボンディングツールである。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. 2 and 3. 4 is a semiconductor device, 6 is a first electrode part, 6 is a first
a second electrode part wire-bonded to the electrode part 5;
7 is a wiring section, 8 is an electronic component soldered to the wiring section 7, the circle with a broken line in A is the heating range necessary for wire bonding, 9 is a plate on which a semiconductor device is attached, and 10 is only within the circle in A. A heating device 11 that heats the semiconductor device 4 from a distance is a wire bonding tool.

そして、前記加熱装置１０は、ケーシング１２と、断熱
管１３と、熱源としての電熱線１４と、導電線１５と、
ノズル１６と、チューブ１７とチューブ１７に送り込ま
れる圧縮空気１８とで構成されている。The heating device 10 includes a casing 12, a heat insulating tube 13, a heating wire 14 as a heat source, and a conductive wire 15.
It is composed of a nozzle 16, a tube 17, and compressed air 18 sent into the tube 17.

上記構成において、矢印Ｂの方向から圧縮空気１８が送
られ、導電線１５を通じて電流を流し、電熱線１４が加
熱する′と、断熱管１３内で圧縮空気１８が加熱され、
加熱された圧縮空気１８がノズル１６から矢印Ｃの方向
に吹き出さｎる。加熱された圧縮空気１８はノズル１６
でしぼら扛るため、矢印Ｃの方向のみの狭い範囲にだけ
吹き出される。吹き出さ扛た圧縮空気１８は半導体装置
４でワイヤボンディングされる第１の電極部５と第２の
電極部６が配置されている円Ａの範囲内に当たり、円へ
の範囲内が集中的に加熱される。このため、ワイヤボン
ディングツール１１によってワイヤボンディングされる
第１の電極部６と第２の電極部６だけが加熱され、ワイ
ヤボンディングが可能となる。また、円Ａの範囲外は加
熱されにくいため、円Ａの範囲外にあるノ＼ンダ配線さ
れた電子部品８のノ１ンダは溶融することがない。□な
お、一実施例において熱発生器１０の熱源は電熱ａ１４
と圧縮空気１８としたが、熱源としては、レーザ光ある
いは赤外線でもよく、要は一方向にのみに熱が放出され
る指向性の強い熱源であればよい。In the above configuration, compressed air 18 is sent from the direction of arrow B, and when a current is passed through the conductive wire 15 and the heating wire 14 is heated, the compressed air 18 is heated within the heat insulating tube 13.
Heated compressed air 18 is blown out from the nozzle 16 in the direction of arrow C. The heated compressed air 18 is passed through the nozzle 16
Since the air is sprayed in a small amount, it is emitted only in a narrow range in the direction of arrow C. The blown compressed air 18 falls within the range of the circle A where the first electrode part 5 and the second electrode part 6 to be wire-bonded in the semiconductor device 4 are arranged, and is concentrated within the range of the circle. heated. Therefore, only the first electrode part 6 and the second electrode part 6 to be wire-bonded by the wire bonding tool 11 are heated, and wire bonding becomes possible. Further, since areas outside the range of circle A are not easily heated, the nodes of the electronic component 8 wired outside the range of circle A will not melt. □In one embodiment, the heat source of the heat generator 10 is an electric heat a14.
Although the compressed air 18 is used as the heat source, laser light or infrared rays may be used as the heat source, as long as it is a highly directional heat source that emits heat in only one direction.

発明の効果 以上のように本発明は、半導体装置内で電子部品の配線
に用いたノ＼ンダを溶融させることなく、ワイヤボンデ
ィングされる電極部のみを加熱できるため、半導体装置
の製造工程順序の制約を無くし、熱源の熱効率を上げる
ことができ、半導体装置製造上きわめて有利である。Effects of the Invention As described above, the present invention can heat only the electrode portions to be wire-bonded without melting the solder used for wiring electronic components within the semiconductor device. This eliminates restrictions and increases the thermal efficiency of the heat source, which is extremely advantageous in manufacturing semiconductor devices.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の加熱装置を備えたワイヤボンダの主要部
の斜視図、第２図は本発明の一実施例に６／神ジ おける加熱装置付きワイヤボンダの主要部の斜視図、第
３図は同加熱装置の断面図である。 ４・・・・・・半導体装置、１０・・・・・・加熱装置
、１１・・・・・・ワイヤボンディングツール、１２・
・・・・・ケーシング、１４・・・・・・電熱線、１６
・・・・・・ノズル、１８・・・・・・圧縮空気。FIG. 1 is a perspective view of the main parts of a conventional wire bonder equipped with a heating device, FIG. 2 is a perspective view of the main parts of a wire bonder equipped with a heating device according to an embodiment of the present invention, and FIG. It is a sectional view of the same heating device. 4... Semiconductor device, 10... Heating device, 11... Wire bonding tool, 12...
...Casing, 14...Heating wire, 16
...Nozzle, 18...Compressed air.

Claims (1)

【特許請求の範囲】 （１）　　ワイヤボンディングツールと、ケーシング内
に送り込まれた圧縮空気を加熱する熱源と、加熱された
前記圧縮空気を前記ケーシング外の一方向（２）熱源が
レーザ光である特許請求の範囲第１項記載の加熱装置付
きワイヤボンダ。 （３）熱源が赤外線である特許請求の範囲第１項記載の
加熱装置付きワイヤボンダ。[Scope of Claims] (1) A wire bonding tool, a heat source that heats compressed air sent into the casing, and one direction of heating the compressed air outside the casing (2) The heat source is a laser beam. A wire bonder with a heating device according to claim 1. (3) The wire bonder with a heating device according to claim 1, wherein the heat source is infrared rays.
JP58058120A 1983-04-01 1983-04-01 Wire bonder with built-in heater Pending JPS59184537A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58058120A JPS59184537A (en) 1983-04-01 1983-04-01 Wire bonder with built-in heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58058120A JPS59184537A (en) 1983-04-01 1983-04-01 Wire bonder with built-in heater

Publications (1)

Publication Number Publication Date
JPS59184537A true JPS59184537A (en) 1984-10-19

Family

ID=13075110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58058120A Pending JPS59184537A (en) 1983-04-01 1983-04-01 Wire bonder with built-in heater

Country Status (1)

Country Link
JP (1) JPS59184537A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6491202B1 (en) 1999-07-02 2002-12-10 Kabushiki Kaisha Shinkawa Wire bonding apparatus and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6491202B1 (en) 1999-07-02 2002-12-10 Kabushiki Kaisha Shinkawa Wire bonding apparatus and method

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