JPS59184524A - Electron beam exposure device - Google Patents

Abstract

PURPOSE:To obtain the device of high accuracy and high productivity for manufacture of very LSI or the like comprising a line width of submicron order by a method wherein plural apertures are formed in an objective aperture and plural aperture lenses are formed in a screen lens in a manner that these lenses correspond to said apertures respectively. CONSTITUTION:Electromagnetic lenses 24 form a crossover image of an electron beam 50 in positions of apertures for blanking 23. The electromagnetic lenses 25 so functions that an electron beam 51 passing through the aperture for blanking 23 becomes a parallel beams and is projected onto an electrostatic-type electron lens 26. In the electrostatic-type electron lens 26, 150 of electronic lenses are formed. The electron beam passing through the electrostatic-type electron lens becomes 150 rays of electron beam 52 which are parallel beams through an electrostatic-type electron lens 27 and said rays are focused on a surface of a wafer 31 and aperture images of beam-shaping apertures 28 are reduced to form a contracted image.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam exposure system for rapidly performing nocturnal drawing on a sample such as a silicon wafer, which is necessary in the manufacture of LSIs (Large Scale Integrated Circuits) and the like.

[Technical background of the invention and its problems]

As a device for exposing patterns in the manufacture of LSI etc.
Exposure apparatuses that utilize ultraviolet light, electron beams, etc. have been developed and are in use.

Conventionally developed ultraviolet exposure equipment uses a mask with a pattern formed in advance, and projects the pattern on the mask substrate onto a wafer at a magnification of 1/1, 115, 1/10, etc. using an optical system using ultraviolet rays as a medium. Then, a pattern is sprayed onto the resist film on the wafer.

This ultraviolet exposure apparatus is suitable for mass production of LSIs and the like. However, it is not suitable for exposing fine patterns with a line width of 1 μm or less. It is still necessary to fabricate a mask substrate for LSI prototypes for the development of new LSIs, so it takes a long time to design the LSI manufacturing button and expose the pattern onto the wafer. In short,
Turnaround time for LSI development cannot be shortened.

Electron beam exposure equipment is used to expose patterns on mask substrates used in the ultraviolet ray exposure equipment, and because it can draw the final pattern directly onto the wafer, it is useful for LSI manufacturing in high-mix, low-volume production and for the development of new LSIs. etc. is used.

However, it is a well-known fact that the productivity of electron beam exposure equipment is low.
It was about 10 drawings.

With the aim of improving the productivity of electron beam exposure devices, electron beam exposure devices have been developed that generate one electron beam for each chip to be drawn on a wafer and draw patterns using multiple electron beams. Conventional devices of this type are
Literature [Ivor BRODIE et al;
ultiple-Electron-BeamExpo
Sure System for High-Thro
ughput, Direct-Wrjte Submi
crometer lithography, IEEE
TRANSACTIONS ON ELECTRON
DEVICES, VOL, ED-28°No, 11
, NOVEMBER 1981, p. 1422 J.

The configuration of the device disclosed in this document is shown in FIG. 1
is the cathode, 2 is the grid, and 3 is the anode.

4 is a lens, 5 is a blanker, 6 is a beam shaping aperture, 7 is a first deflector, 8 is a second deflector, 9 is a screen lens,
11 is a beam limiting aperture, zs is a lens aperture, and 14 is an electron beam. The beam limiting mirror 9-chier 12 and the lens aperture 13 constitute an aperture lens. Anatomical lenses are electrostatic type electron lenses. A 5011 m x 50 μm aperture is formed on the objective aperture. The electron beam incident on the objective aperture 6 is 1k
This electron beam, which is accelerated by a voltage of V and passes through the objective aperture 6, uniformly irradiates the screen lens 9. A voltage of 9 kV is applied between the screen lens 9 and the wafer 10.

Each aperture lens on the screen lens 9 reduces the aperture image on the objective diaphragm 6 and forms the image on the wafer. The aperture lenses are arranged in a matrix at intervals of 5wn, and a reduced aperture image on the objective diaphragm 6 is formed on the surface of the wafer 10 directly below each aperture lens. By applying an appropriate voltage to the first deflector 7 and the second deflector 8, the aperture image on the plane 10 is deflected and scanned. In the apparatus shown in the cited document, the deflection width of the aperture image is 200 μm, and a pattern is drawn while continuously moving the wafer 10 by moving the stage 11 in a direction perpendicular to the deflection direction. The size of one chip is 5
When the A' methane drawing in the area of 2008 m x 5 mm is completed in the key x 5, the pattern is drawn in the next area of 2008 m x 5 mm. By repeating this process, an iR pattern is drawn within the area of one chip. Here, one aperture image is formed on each chip on Ueno-10,
A pattern is drawn on each chip on the wafer 10 at the same time. In the device shown in the cited document, 5 on the objective diaphragm 6
The aperture of 0 μm x 50 μm is reduced to 1/100,
The minimum pattern size is 05 μm×05 μm. Also,
Beam current value is approximately 10nA, sensitivity is approximately 0.5μC/c
When using a resist of m2, it is possible to write 60 4-inch wafers per hour.

As described above, the multi-beam type electron beam exposure apparatus disclosed in the cited document has extremely high productivity, but has the following drawbacks.

In FIG. 1, the distance between the objective aperture 6 and the screen lens 9 is 1 m, and the distance between the screen lens 9 and the surface of the wafer 10 is 2 crn. Direct electron beams are incident on the aperture lens at the center of the screen lens 9 in a superimposed manner, but electron beams are incident obliquely on the aperture lenses at the periphery of the screen lens 9. The angle of incidence of the electron beam on the aperture lens at the periphery of the screen lens 9 is 3°. FIG. 2 is a diagram showing these situations. 15 is the surface of the wafer 10;
16.17 is an electron beam. 2(,) shows the central part of the screen lens 9, and FIG. 2(b) shows the peripheral part of the screen lens 9. In FIG. 2(b), when no voltage is applied to the first deflector 7 and the second deflector 8, the electron beam 17 is directed from the intersection O of the optical axis of the anno-challenge lens and the wafer surface 15 to the wafer surface 15. Let L be the distance to the point of incidence on the surface 15.

The acceleration voltage of the electron beam incident on the screen lens 9 is V. , the voltage applied between the screen lens 9 and the wafer surface 15 is Vl, the distance between the screen lens 9 and the wafer surface 15 is H, and the value of L when Vo-vl is Lo
+ is the incident angle of the child beam to the screen lens 9 as θ.

There is a relationship: LO==Htanθ (1). However, according to formula 71 (2, 5) of Katsumi Ura: Electronic Optics (Kyoritsu Shuppan Co., Ltd., Kyoritsu Zensho 228), there is the following relationship. Since H=2 cm and θ=3°, pL6=1 m according to equation (1). Vo=1 kV,
Since v1=9 kV, from equation (2), L/Lo=
o, 5. Therefore, L=0.5 mm. The above shows that on the wafer surface 15, the distance from the intersection point 0 of the optical axis of the aperture lens and the wafer surface 15 to the beam deflection center differs by 0.5 degrees between the central part and the peripheral part of the screen lens 9. ing. When deflecting a beam, there is a deflection distortion, so if the beam is deflected by ±100 μm around the beam deflection center, the exact value of the beam deflection width of 200 μm will be determined by the screen lens The central part and the peripheral part of 9 are different. For this reason, as described in the cited document, with this device, the accuracy of joining patterns between adjacent 200 μm x 5 m+n areas is only about 0.2 μm. Further, due to the principle of this device, it is impossible to independently correct the beam irradiation position of each electron beam of each aperture lens. The pattern joining accuracy of 0.2 μm is insufficient for pattern drawing with the minimum pattern size of 0.5 μm x 0.5 μm, and a multi-beam type electron beam exposure device as described in the cited document is used. In order to serve
It is necessary to improve the stitching accuracy. Furthermore, in the multi-beam type electron beam exposure apparatus as described in the cited document, it is necessary to keep the current value of each of the multiple electron beams irradiated onto the wafer constant; The only way to do this was to make the radiation angle distribution of the electron beam generated from the electron gun uniform.Also, since it was equipped with only one electron gun, the current of each of the multiple electron beams irradiating the wafer There were limitations in increasing the value and increasing the exposure speed.

[Purpose of the invention]

The present invention relates to an improvement on a conventional multi-beam type electron beam exposure apparatus. A plurality of apertures are formed in the electron beam, and the beam shaping diaphragm and screen lens are arranged so that the apertures and the aperture lenses correspond one to one, so that the incident angle of the electron beam entering each aperture lens is the same. So,
Furthermore, it is equipped with means for increasing the beam current value and improving the uniformity of the beam current values for the plurality of electron beams irradiated onto the wafer.The plane shown in FIG. 1F will be described in detail below.

[Embodiments of the invention]

FIG. 3 shows the configuration of a multi-beam type electron beam exposure apparatus which is an embodiment of the present invention. This multi-beam type electron beam exposure device is designed to draw patterns on wafers with a diameter of 4 inches, and the size of one chinozo is 6 wn.
150 Tinov 0 per 4 inch wafer at x 5 gB
In order to write the wafer, one focused electron beam is formed for each chip, and a total of 150 focused electron beams are used to write the electron beam on the wafer. 2θ is an electron gun.

21 is an anode, 22 is a blanker, 23 is a blanking aperture, 24.25 is an electromagnetic lens, 26.27 is an electrostatic electron lens, and 28 is a beam shaping aperture.

29 is a two-stage electrostatic beam deflector, 30 is a screen lens, 311d'j Eva, 32td, Stay-Zo,
4θ is a control computer, 41 is a deflection control circuit, 42 is a stage control circuit, and 50.51, 52° and 53.54 are electron beams. The outer diameter of the electrostatic electron lens 26, 27, beam shaping aperture 28 and screen lens 30 is approximately 105
It is wn. The electron beam 5o generated by the electron gun 20 is accelerated by a voltage of 3 kV applied to the anode 21.

The electromagnetic lens 24 receives the electron beam 5 generated by the electron gun 2o.
A crossover image of 0 is formed at the position of the blanking aperture 23. The electromagnetic lens 25 is excited so that its focal point coincides with the position of the blanking aperture 23, and the electron beam 51 that has passed through the blanking aperture 23 becomes a parallel beam and irradiates the electrostatic electron lens 26. Do it like this. 150 electron lenses are formed in the electrostatic type electron lens 26, and the inner diameter of each electron lens is 600 μm. The electron beam that has passed through the electrostatic electron lens 26 enters the electrostatic electron lens 27, and 150 electron beams 52, each of which is a parallel beam, come out from the electrostatic electron lens 27. . The electrostatic electron lens 27 includes
150 electron lenses are formed, and the inner diameter of each electron lens is 100 μm. Here, a sectional view of the electrostatic type electron lenses 26 and 27 is shown in FIG. 60 and 61 are outer electrode plates, and 62 is an inner electrode plate. Outer electrode plate 60.6
1. A set of inner electrode plates 62 constitutes an electrostatic electron lens. In the outer electrode plates 50, 61 and the inner electrode plate 62, 150 holes each having a diameter of 600 μm in the case of the electrostatic type electron lens 26 and 100 μm in diameter in the case of the electrostatic type electron lens 27 are formed at six holes. The potential of the outer electrode plate 60°61 is grounded, and the potential of the inner electrode plate 62 is -2 kV to -3 kV.
Apply a voltage of By adjusting the voltage applied to the inner electrode plate 62, the focal length of each electrostatic lens is set to a desired value. In the beam shaping aperture 28, 150 square apertures of 40 μm×40 μm are arranged at a spacing of 6Wn.

Aperture lenses are formed on the screen lens 30 at positions corresponding to each aperture of the beam shaping diaphragm 28. The electron beam 53 that has passed through each aperture on the beam shaping aperture 28 is focused onto the surface of the wafer 31 by each aperture lens on the screen lens 30, and each aperture image of the beam shaping aperture 28 is reduced and formed into an image. do.

13- Each electron beam 53 is parallel to each other.

The electrostatic beam deflector 29 is arranged in the X and Y directions, and controls the irradiation position of the electron beam 54 onto the surface of the wafer 31 by applying a voltage. The voltage applied to the blanker 22 is turned on and off to turn on and off the electron beam irradiated onto the surface of the wafer 31, and a pattern is generated in conjunction with deflection scanning of the electron beam. Beam deflection width is 200μm
Then, the stage 32 is continuously moved in a direction perpendicular to this deflection direction to draw a pattern. In the case of this example, the chip size is 6 mm x 6 trs, and the 200μ inside the thiazo
Draw a pattern every mx6mm. One electron beam is formed on each chip on the wafer 3, and a pattern is simultaneously drawn on each chip by these electron beams. The distance zo between the beam shaping aperture 28 and the screen lens 3o is 200 wn, and the curved distance z1 between the screen lens 30 and the surface of the wafer 3I is 5 wn. In this case, the aperture on the beam shaping aperture 28 is connected to the wafer 31.
The magnification M when an image is formed on the surface of
It is given by 2. Therefore, in the case of this example,
M-1/80 and 40 μm on beam shaping aperture 28
An annular diameter of 40 μm is 0.5 μm on the surface of wafer 31.
The electron beam image is 0.5μm×0.5μm
．． It is possible to draw 5μm bumps. screen lens 30
Each aperture lens formed above has a radius a-3
It consists of a beam limiting aperture of 5 μm and a lens aperture with radius R=70 μm. Further, the acceleration voltage of the electron beam 52 incident on the beam shaping aperture 28 is 3]
cV + The voltage applied between the screen lens 30 and the surface of the wafer 31 is 25.7 kV, and Z 6 +
The focus condition is satisfied with the value of 21. moreover,
From the value of ZOIZl, the dimensions of the aperture lens, the beam acceleration voltage, etc., the spherical aberration is 0.028 μm, and the chromatic aberration is 0.1.
The beam characteristics are sufficient for the formation of a diameter of 0.5 μm. However, in this embodiment, the electron gun 20
A tungsten electron gun is used to uniformly irradiate an electrostatic electron lens 26 with an outer diameter of about 105 mm with an electron beam 5.
The total beam current value of 1 is about 2 mA, and the electrostatic electron lens 2
The beam current density of the electron beam 51 that uniformly irradiates the electron beam 6 is approximately 25 A-m2. Electrostatic electron lenses 26 and 27
, the beam current density is 36 times greater, and a beam current of approximately 13 nA is incident on each 40 μm×40 μm atR-cha on the beam shaping aperture 28. Furthermore, the beam aperture angle α that limits the beam current value of the electron beam 54 irradiated onto the wafer 3 is 4.7 mrad, and this implementation was performed using a tungsten electron gun with a brightness of 5 × 10 A/crn/sr. In the example, if a beam current value of about 8 nA is obtained and a resist with a sensitivity of 1 μC/cm2 is used, the actual exposure time per 4-inch wax is about 0.8 minutes, which is 1
Capable of drawing more than 50 wafers per hour. Here, since the electron beams 53 that have passed through each aperture on the beam shaping aperture 28 are parallel to each other, even when the electron beams 53 are deflected by the electrostatic beam deflector 29, they are parallel to each other. The incident angles of the electron beams 53 entering each aperture lens in the screen lens 30 are the same. Therefore, the beam shaping aperture 28
．． By accurately manufacturing and assembling the screen lens 30 and the like, the deflection distortion caused in the deflection of the electron beam 53 incident on each aperture lens in the screen lens 30 becomes the same. Therefore, the difference in beam deflection width between the center and peripheral parts of the screen lens described in the technical background of the invention and its problems can be reduced to a negligible extent. In addition, since the deflection distortion is the same for each aperture lens, it is possible to correct the deflection distortion. Accuracy can be improved to within 0.1 μm, which is required for 0.5 μm glossy drawing. In addition, electrostatic type electron lens 26.27. Beam shaping aperture28.
Each screen lens 30 has 150 holes formed around the same optical axis, and 150 electron beams 17- are formed at 4-inch intervals at 6-point intervals. Make sure to cover the wafer.

Further, in the configuration shown in FIG. 3, an electrostatic deflector 29 is used as the beam deflector, but an electromagnetic deflector may be used instead.

Next, FIG. 5 shows the configuration of a multi-beam type electron beam exposure apparatus which is another embodiment of the present invention. 120 is an electron gun, 121 is an anode, 122 is a blanker,
123 is a blanking aperture, 124 and 125 are electromagnetic lenses, 126° and 127 are electrostatic electron lenses, 128 is a beam shaping diaphragm, 129 is a two-stage electromagnetic beam deflector, 130 is a screen lens, and 160 is a shield. Cylinder,
131 is a wafer, 132 is a stage, 140 is a control computer, 141 is a deflection control circuit, and 142 is a stage control circuit. In the multi-beam type electron beam exposure apparatus which is an embodiment of the present invention as shown in FIG. When increasing the reduction ratio of the aperture image of the beam shaping aperture 28 by increasing the distance between the aperture 28 and the screen lens 18-30, the beam passing through the aperture of the beam shaping aperture 28 is The electron beam is incident not only on the aperture lens bracket of the screen lens 30 corresponding to the aperture but also on other aperture lenses,
The outline of the aperture image of the beam shaping aperture 28 formed on the Weno\31 becomes blurred. Another embodiment of the present invention shown in FIG. 5 is effective in avoiding such a situation. A portion of a plan view of the shield tube 160 is shown in FIG. The shielding tube 160 is made of a thin plate of non-magnetic metal such as aluminium or copper, and has a so-called two-cam structure, so that each of the electron beams passing through each aperture of the beam shaping aperture 128 passes through one of the shielding tubes 160. Make sure it passes near the center of the tube. In this way, the a/? - It is possible to prevent the electron beam passing through the aperture from being incident not only on the anno-cuture lens of the screen lens 130 corresponding to the aperture but also on other anno-cuture lenses. When a shield tube is used, an electrostatic deflector cannot be used, and the electron beam is deflected by an electromagnetic deflector 129. In the embodiment of the present invention shown in FIG.
The embodiment of the present invention shown in FIG. 3 is similar to the embodiment of the present invention shown in FIG. Performance similar to that described in Figure 5 can be obtained with the embodiment of the invention shown in Figure 5.

Next, as another embodiment of the present invention, the fifth
In the illustrated embodiment of the invention, instead of using one set of electromagnetic beam deflectors 129 to deflect 150 electron beams, one set of beam deflectors is used for each of the 150 electron beams. A multi-beam type electron beam exposure apparatus will be explained. In this embodiment, a set of electrostatic beam deflectors is installed in each part of the shield tube 160 in the embodiment of the present invention described in FIG. The rest is the same as the embodiment of the present invention explained in FIGS. 3 and 5. FIG. 7 shows a part of a plan view of a shield tube in another embodiment of the present invention. 260 is a shield tube, and 261 is an electrostatic deflection plate. Shield tube 26θ
Eight electrostatic deflection plates 261 are installed in each cylinder of xy
The beam deflector consists of two stages in the force direction. The electron beams passing through each of the shielding tubes 260 can be deflected and controlled independently by each beam deflector. Therefore, it is possible to independently correct deflection distortion for each of the 150 electron beams used to write a pattern, and the irradiation position of the electron beam onto the wafer can be determined with high precision. It becomes possible to draw high-sounding strokes.

Moreover, since the beam deflection width can be made larger than 200 μm in the embodiment described in FIG. 3, the number of times the stage movement direction is reversed can be reduced, and productivity can be improved.

Next, the current density distribution of the electron beam irradiating the electrostatic electron lens 26 or 126 is not uniform 21-, and the electron beam is incident on each of the plurality of electron lenses formed on the electrostatic electron lens 26 or 126. The variation in the current value may exceed the permissible range. Such a case occurs when the uniformity of the radiation angle distribution of the electron beam emitted from the electron gun 2° or 120 is poor, or when the characteristics of the electron gun deteriorate. Figure 8(a), (
In b), 226-227 are modeled representations of one electron lens formed from 26, 126.27, or 127 electrostatic electron lenses. In FIG. 8(a), the focal lengths of the electron lenses 226 and 227 are adjusted so that the electron beam 251 incident on the electron lens 226 is entirely emitted from the electron lens 227. In FIG. 8(b), the electron lens 226
A part of the electron beam 251 incident on the electron lens 22
7, the electron lenses 226 and 227
Each focal length is adjusted. In this manner, by adjusting the focal lengths of the electron lenses 226 and 227, the amount of electron beams emitted from the electron lens 227 can be controlled. Third
In the embodiment of the present invention shown in the figure, a plurality of electron lenses formed in the electrostatic type electron lens 26 or 27 are individually formed, or each set of several electron lenses is set to have a focal length of the electron lens. By configuring and controlling a plurality of electron lenses in the electrostatic electron lens 26 or 27 so as to adjust the current value of each electron beam irradiated onto the wafer 31, it is possible to make the current value of each electron beam irradiated onto the wafer 31 uniform. This is equally applicable to the embodiment of the invention shown in FIG.

Next, FIG. 9 shows the configuration of a multi-beam type electron beam exposure apparatus which is another embodiment of the present invention. 320 is an electron gun, 321 is an anode, 326 is an electrostatic electron lens, 322 is a blanker, 328 is a beam shaping aperture,
329 is a two-stage electrostatic deflector, 33o is a screen lens, 331 is a wafer, 332 is a stage, 340 is a control computer, 341 is a deflection control circuit, and 342 is a stage control circuit. Similar to the embodiment of the present invention shown in FIG. 3, this is a device for drawing patterns on a wafer with a diameter of 4 inches, and the size of one chip is 6 inches x 6 ttr.
To write 150 chips per 4-inch wafer at m, one focused electron beam is formed for each chip;
A total of 150 focused electron beams are used to draw patterns on the wafer. The electron gun 320 is composed of 150 electron guns, and 150 electrons are generated from each of the 150 electron guns.
For each electron beam of the book, an electron lens on an electrostatic electron lens 326, a blanker 322, a beam shaping aperture 328
One upper aperture, one screen lens, and one upper aperture lens 930 are provided. electron gun 3
When focusing on one of the electron guns 20, an electron beam generated from this electron gun is accelerated by an anode 321 and turned into a parallel electron beam by an electrostatic electron lens 326. This parallel electron beam is incident on an aperture formed in the beam shaping aperture 328, and a reduced image of the anoructure formed in the beam shaping aperture 328 is formed on the wafer 33 by an aperture lens formed in the screen lens 33θ. Blanker 322 turns the electron beam on and off. Other pattern drawing methods and the like are the same as the embodiments shown in FIGS. 3 and 5.

In the case of the embodiment shown in FIG. 9, one electron gun is provided for each of the 150 electron beams that draw a pattern on the wafer 331, so the embodiment shown in FIG.
Compared to the embodiment shown in FIG. 5, the current value of the electron beam can be increased, making it possible to improve productivity. In the embodiment shown in FIG. 9, a two-stage electrostatic deflector 329 is used as the beam deflector.
This can also be an electromagnetic deflector, a combination of a shielding tube and an electromagnetic deflector, or a honeycomb-structured shielding tube including individual electrostatic deflectors.

〔Effect of the invention〕

As explained above, a plurality of aperture lenses are formed in the objective diaphragm, and a plurality of 25-aperture lenses are formed in the screen lens in one-to-one correspondence with each of the apertures. (1) The incident angle of the electron beam entering each aperture lens can be made the same, and the deflection distortion when the electron beam is deflected by each aperture lens is almost the same.
(2) Due to item (1) above, it is possible to correct deflection distortion for multiple electron beams irradiated onto the wafer, and high-precision pattern drawing with excellent splicing accuracy is possible. (3) Pattern If one set of beam deflectors is installed for each electron beam that writes a pattern, it is possible to correct deflection distortion, etc. for each of the multiple electron beams that are irradiated onto the wafer, thereby improving pattern positioning accuracy. (4) When two sets of electrostatic lenses formed with multiple electron lenses are used, the current value of each of the multiple electron beams irradiated onto the wafer can be increased. Furthermore, by configuring an electrostatic lens so that the focus of a plurality of electron lenses can be adjusted individually, it is possible to make the current values of the plurality of electron beams irradiated onto the wafer uniform26. - (5) By having multiple electron guns, the current value of each of the multiple electron beams irradiated to the wafer can be increased compared to an apparatus equipped with only one sub-gun, and the exposure speed can be increased. The present invention has advantages such as improved performance, and can provide a highly accurate and highly productive electron beam exposure apparatus for manufacturing VLSIs and the like having line widths in the submicron range.

[Brief explanation of drawings]

Figure 1 is an explanatory diagram of the configuration of a conventional multi-beam type electron beam exposure apparatus, and Figure 2 is a diagram showing the configuration of a conventional multi-beam type electron beam exposure apparatus. A diagram showing the state of an electron beam, FIG. 3 is an explanatory diagram of the configuration of a multi-beam type electron beam exposure apparatus that is an embodiment of the present invention, and FIG. 4 shows an example of the electrostatic electron lens shown in FIG. 3. A cross-sectional view, FIG. 5 is an explanatory diagram of the configuration of a multi-beam type electron beam exposure apparatus which is another embodiment of the present invention, and FIGS. 6 and 7 are a part of an example of the shield tube shown in FIG. 5. FIG. 8 is a diagram for explaining an example of a method for adjusting the beam current value in FIG. FIG. 2 is a configuration explanatory diagram of an exposure apparatus. 1... Cathode, 2... Grid, 3, 21, 12
1゜321...Anode, 4...Lens, 5,22,1
22.322... Blanca, 6, 28, 128, 32
8... Beam shaping aperture, 7... First deflector, 8...
Second deflector, 9,30°130.330... Screen lens, 10, 31.131°331... Wafer, 11,32,132,332 Stage, 12...
Beam limiting aperture, 13... Lens aperture 3, aperture, 14, 16, 17, 50, 51, 52. A
54...Electron beam, 15...Surface of wafer 10, 2o. 120.320...electron gun, 23.123...blanking aperture, 24.25,124.125...electromagnetic lens, 26.27.126,127.326...
Electrostatic electron lens, 29,329... Electrostatic beam deflector, 40,140°340... Control computer, 41,
141,341...deflection control circuit, 42,142.3
42... Stage control circuit, 60. 61... Outer electrode plate, 62... Inner electrode plate, 129... Electromagnetic beam deflector, 160, 260... Shield cylinder, 226
, 227...electronic lens, 261...electrostatic deflection plate. Applicant's agent Patent attorney Takehiko Suzue 29- Figure 1 Figure 2 Figure 7 =99 =□9 /15 yno15 L\, Figure 6 (a) Figure 7 Figure 8 (b)

Claims (1)

[Scope of Claims] 18 In a multi-beam type electron beam exposure apparatus for performing flash writing on a sample using a plurality of electron beams, a beam shaping aperture having a plurality of apertures, and the beam shaping aperture 1. An electron beam exposure apparatus comprising: a screen lens having a plurality of aperture lenses arranged in one-to-one correspondence with the plurality of apertures; and a beam deflector for deflecting an electron beam. 2. The electron beam exposure apparatus according to claim 1, wherein a shielding tube is installed between the beam shaping aperture and the screen lens, and the beam deflector is of an electromagnetic type. 3. A claim characterized in that the shield tube has a honeycomb structure, and instead of an electromagnetic beam deflector, an electromagnetic or electrostatic type 1 deflector is installed for each shield tube of the honeycomb structure. The electron beam exposure apparatus according to item 2. 4. Electrostatic type electron lens formed with multiple electron lenses 2.
An electron beam exposure apparatus according to any one of claims 1 to 3, characterized in that the electron beam exposure apparatus is equipped with: 5. An electron beam exposure apparatus according to claim 1, comprising a plurality of electron guns. 6. Divide the plurality of electron lenses formed in at least one set of electrostatic electron lenses among the two sets of electrostatic electron lenses into a plurality of sets, and each divided set of electron lenses is 5. The electron beam exposure apparatus according to claim 4, wherein the intensity of the lens action can be controlled.