JPS59182582A - Gallium arsenide light emitting element - Google Patents
Gallium arsenide light emitting elementInfo
- Publication number
- JPS59182582A JPS59182582A JP58057038A JP5703883A JPS59182582A JP S59182582 A JPS59182582 A JP S59182582A JP 58057038 A JP58057038 A JP 58057038A JP 5703883 A JP5703883 A JP 5703883A JP S59182582 A JPS59182582 A JP S59182582A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- single crystal
- crystal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract description 35
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 19
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明はカリウム砒素のＰＮ接合を利用して光を発生
させる（ＡＡｓ発光素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an AAs light emitting device that generates light using a potassium arsenide PN junction.
従来のＧａＡｓ発光素子は単結晶のカリウム砒素（以下
Ｑａ Ａｓと記す）基板上に、これよりも欠陥が少ない
良品Ｔ４の単結晶ＧａＡＳを気相成長させて、この気相
成長層に’Ｐ Ｎ接合を形成していた。Ｇａ Ａｓ屯結
晶基板は高価であシ、特に大面積のものは得難い。一方
現在の半導体集積回路はシリコン基板 −上に’４１成
したものが主流である。従ってシリコン基板に集積回路
を形成すると共に、これと機能的に関連したＧａ Ａｓ
発光素子を形成できれば光−電気集積回路を構成するこ
とができ頗る便利である。Conventional GaAs light-emitting devices are made by growing good T4 single-crystal GaAs, which has fewer defects, in the vapor phase on a single-crystal potassium arsenide (hereinafter referred to as QaAs) substrate, and forming 'P N in this vapor-phase grown layer. had formed a junction. GaAs crystal substrates are expensive, and it is particularly difficult to obtain large-area substrates. On the other hand, the mainstream of current semiconductor integrated circuits is those built on silicon substrates. Therefore, while forming an integrated circuit on a silicon substrate, a GaAs
If a light emitting element can be formed, an opto-electrical integrated circuit can be constructed, which is very convenient.
しかし単結晶Ｇａ Ａｓの格子定数は単結晶シリコンの
格子定数より４係程度大きいため、単結晶シリコン基板
上に単結晶Ｇａ Ａｓを直接形成することはできない。However, since the lattice constant of single-crystal GaAs is about a factor of 4 larger than that of single-crystal silicon, single-crystal GaAs cannot be directly formed on a single-crystal silicon substrate.
この発明の目的は単結晶シリコン基板上に形成したＱａ
Ａｓ発人素子を提供することにある。The purpose of this invention is to form Qa on a single crystal silicon substrate.
An object of the present invention is to provide an As starter element.
この発明１てよれば単結晶シリコン基板上ＶＣ中結晶ゲ
ルマニウム層が形成され、そのゲルマニウム層上に単結
晶Ｇａ Ａｓ層が形成され、その単結晶ＧａＡｓ層にＰ
Ｎ接合が形成される。このようにゲルマニウム層を設け
ることにより単結晶シリコン基板と単結晶Ｇａ Ａｓ層
との格子整合が行われ、結晶性の良好な単結晶Ｑａ Ａ
ｓ層が得られる。発光素子としてはＱａ Ａｓ層の結晶
性が特に良好であることが好ましく、この点からゲルマ
ニウム層のｊ！−さは０．０５μ〜０．１μ程度が好ま
しい。According to this invention 1, a crystal germanium layer is formed in a VC on a single crystal silicon substrate, a single crystal GaAs layer is formed on the germanium layer, and a P layer is formed on the single crystal GaAs layer.
An N-junction is formed. By providing the germanium layer in this way, lattice matching between the single crystal silicon substrate and the single crystal GaAs layer is achieved, resulting in a single crystal QaA with good crystallinity.
An s-layer is obtained. As a light-emitting element, it is preferable that the QaAs layer has particularly good crystallinity, and from this point of view, the j! - The thickness is preferably about 0.05μ to 0.1μ.
以下この発明によるＧａ Ａｓ発光素子の実施例を図面
を参照して説明する。図において例えばｎ形の単結晶シ
リコン基板１１が設けられ、この基板１１の厚さは例え
ば５００μ程度であり、このシリコン基板１１上に単結
晶ゲルマニウム層１２が形成される。ゲルマニウム層１
２の厚さは０．０５μ以上、好ましくは０．０５μ〜０
１μとされる。Embodiments of the GaAs light emitting device according to the present invention will be described below with reference to the drawings. In the figure, for example, an n-type single crystal silicon substrate 11 is provided, and the thickness of this substrate 11 is, for example, about 500 μm, and a single crystal germanium layer 12 is formed on this silicon substrate 11. germanium layer 1
The thickness of 2 is 0.05 μ or more, preferably 0.05 μ to 0
It is assumed to be 1μ.
０．０５μＪｄＴではシリコンとＯａ Ａｓとの良好な
格子整合が困難であり、また余シ厚くしてもＧａ Ａｓ
の結晶性が悪くなる。このゲルマニウム層１２の形成は
シリコン基板１１を４００〜５００°Ｃに加熱し、真空
度１０−６ＴｏｒｒＪＪ、■で、成長速１１ｆｌカ１０
′Ａ７秒り、■で電子ビーム蒸着法により行う、この成
長速度は遅い方が結晶成がよく、１０Ａ／秒以上に速く
するとゲルマニウム層１２の表面に凹凸が生じて好まし
くない。ゲルマニウム層１２の形成は熱加熱による蒸着
、いわゆる真空蒸着によってもヨく、あるいは先ず非晶
質（アモルファス）のゲルマニウム層を形成した後、熱
やレーザによシアニールして単結晶化してもよく、また
化学的気相成長法、（ＣＶＤ）によって形成してもよい
。At 0.05μJdT, it is difficult to achieve good lattice matching between silicon and OaAs, and even if the thickness is thicker, GaAs
crystallinity deteriorates. This germanium layer 12 is formed by heating the silicon substrate 11 to 400 to 500°C, at a vacuum level of 10-6 TorrJJ, and at a growth rate of 11 fl/10
The crystallization is carried out by electron beam evaporation at 7 seconds A and 2. The slower the growth rate, the better the crystal formation, and if it is faster than 10 A/second, the surface of the germanium layer 12 will become uneven, which is not preferable. The germanium layer 12 may be formed by vapor deposition by thermal heating, so-called vacuum vapor deposition, or by first forming an amorphous germanium layer and then cyannealing it by heat or laser to make it into a single crystal. Alternatively, it may be formed by chemical vapor deposition (CVD).
ゲルマニウム層１２上に例えばｎ形の小結晶ＧａＡｓ層
１３が形盛される。Ｇａ Ａｓ層１３の厚さは例えば６
０μ程度とされる。この形成は例えば有機金属熱分解気
相成長法（ＭＯＣＶＤ法）、にょシ行われ、その成長条
件としてはガス流量モル比でＡｓＨ３（７＃シン）／Ｔ
ＭＧ（）リメチルカリウム）ヲ１０〜１００好ましくは
１０〜２４、Ｓｉ Ｈ４（シラン） ／ Ｔ Ｍ Ｏを
Ｏ〜１０×１０−３好マＬｌｊ：２〜４４Ｘ１０ とし
、基板温度を４ｏｏ〜９ｏｏ０Ｃ好ましくは５００〜６
５ｏ０Ｃと、成長速度を０．００１〜１μ／分とする。For example, an n-type small crystal GaAs layer 13 is deposited on the germanium layer 12 . The thickness of the GaAs layer 13 is, for example, 6
It is assumed to be about 0μ. This formation is carried out, for example, by metal organic pyrolysis vapor deposition (MOCVD), and the growth conditions are AsH3 (7# thin)/T
MG (limethylpotassium) is 10 to 100, preferably 10 to 24, Si H4 (silane) / TMO is 0 to 10 x 10-3, preferably 2 to 44 x 10, and the substrate temperature is preferably 4 to 9 0C. is 500-6
5o0C and a growth rate of 0.001 to 1 μ/min.
結晶性の良好なものを得る点からは載板？温度をなるべ
く低くし、かつ成長速度を遅くすることが好ましい。ま
た前記ガス流計モル比とすることによりＡｓとＧａとを
はＮ１：１で成長させることができ、良品質の結晶が得
られる。５ｉＩ−１４はｎ形にするだめのものであり、
Ａｓを多くすることによってもｎ形に近すけ、Ａｓを少
なくすることによりｐ形に近ずけることができる。Is it listed in terms of obtaining good crystallinity? It is preferable to keep the temperature as low as possible and slow the growth rate. Further, by setting the molar ratio of the gas flow meter as described above, As and Ga can be grown at a ratio of N1:1, and a high quality crystal can be obtained. 5iI-14 cannot be converted into n-type,
By increasing the amount of As, it can be made closer to n-type, and by decreasing the amount of As, it can be made closer to p-type.
ｎ形にするためにはＳｅ 、 Ｓ 、 Ｔｅなどを不純
物として用いてもよい。In order to make it n-type, Se, S, Te, etc. may be used as impurities.
単結晶ＧａＡｓ層１３上にこれと逆導電形の単結晶Ｇａ
Ａｓ層１４が形成され、これら間にＰＮ接合１５が形
成される。この例ではｐ形の単結晶ＧａＡｓ層１４が形
成される。このＧａ Ａｓ層１４の厚さは例えば１２μ
であり、Ｇａ Ａｓ層１３の成長に連続して気相成長さ
せることができ、この場合ｐ形不純物、例えばＺｎを含
むガスも同時に供給する。あるいはＧａ Ａｓ層１３上
にｐ形不純物の熱拡散やイオン注入などによってｐ形Ｑ
ａ ＡＳ層１４を形成することもできる。ｐ形不純物と
してばＳｉ、Ｇｅなどを用いることもできる。On the single-crystal GaAs layer 13, a single-crystal Ga of the opposite conductivity type is formed.
An As layer 14 is formed, and a PN junction 15 is formed therebetween. In this example, a p-type single crystal GaAs layer 14 is formed. The thickness of this GaAs layer 14 is, for example, 12μ.
Therefore, vapor phase growth can be performed successively to the growth of the GaAs layer 13, and in this case, a gas containing a p-type impurity such as Zn is also supplied at the same time. Alternatively, p-type Q
a AS layer 14 can also be formed. Si, Ge, etc. can also be used as the p-type impurity.
シリコン基板１１のゲルマニウム層１２と居対１創の面
及びＧａ Ａｓ層１４上にそれぞれ電極１６゜１７が形
成される。Electrodes 16 and 17 are formed on the surfaces of the germanium layer 12 and the GaAs layer 14 of the silicon substrate 11, respectively.
このようにして得られたＧａ Ａｓ発光素子に対し、電
極１．６ ’、１７間に順方向に電流を流すことによＶ
＝長８９７ ｎｍの光の発生を確認した。なお基板の
みをシリコンの代りにＧａ Ａｓとし、その他は同一条
件でＧａ Ａｓ層１３．１４を形成した場合は波長８７
３１ｍであった。By passing a current in the forward direction between the electrodes 1.6' and 17, V
The generation of light with a length of 897 nm was confirmed. In addition, when only the substrate is made of GaAs instead of silicon and the GaAs layers 13 and 14 are formed under the same conditions, the wavelength is 87.
It was 31m.
以上述べたようにこの発明によればゲルマニウム層１２
を介在することによシリコン基板１１上にＧａ Ａｓ発
光素子を形成することができる。つま９シリコン基板１
１に対しゲルマニウムが混晶し、その上にゲルマニウム
の単結晶層１２ができ、ゲルマニウムとＧａ Ａｓとは
格子定数が等しいためにＱａ ＡＳの良好な結晶が１昇
られる。シリコン基板はＧａＡｓ基板よりも安価であり
、しかも大面積のものも容易に人手でき、それだけＱａ
ＡＳ発光素子を安価に作ることができる。まだシリコ
ン基板上に集（＾回路を形成し、そのシリコン基板上に
ＧａＡｓ発光素子を形成することによシ、新しい成能を
もつ光−電気集積回路を作ることができる。更にシリコ
ン基板は熱伝導率が良いため、放熱効果が高いものが得
られる。シリコン基板１１をｐ形、ＧａＡｓ１唾１３を
ｐ形、Ｇａ Ａｓ層１４をｎ形とそれぞれしてもよい。As described above, according to the present invention, the germanium layer 12
A GaAs light emitting element can be formed on the silicon substrate 11 by interposing the above. Toe 9 silicon substrate 1
1, germanium is a mixed crystal, and a single crystal layer 12 of germanium is formed thereon, and since germanium and GaAs have the same lattice constant, a good crystal of Qa AS is raised by 1. Silicon substrates are cheaper than GaAs substrates, and can be easily fabricated with large areas by hand, resulting in lower Qa.
AS light emitting elements can be manufactured at low cost. By forming integrated circuits on a silicon substrate and forming GaAs light emitting devices on the silicon substrate, it is possible to create opto-electrical integrated circuits with new capabilities. Since the conductivity is good, a product with high heat dissipation effect can be obtained.The silicon substrate 11 may be of p-type, the GaAs layer 13 may be of p-type, and the GaAs layer 14 may be of n-type.
図はこの発明によるＧａ Ａｓ発光素子の一例を示す断
面図である。
１１：単結晶シリコン基板、１２：ゲルマニウム層、１
３ 、１４ ： Ｇａ Ａｓ層、１５：ＰＮ接合、１６
．１７：電極。
特許出願人 星電器製造株式会社The figure is a sectional view showing an example of a GaAs light emitting device according to the present invention. 11: Single crystal silicon substrate, 12: Germanium layer, 1
3, 14: GaAs layer, 15: PN junction, 16
．． 17: Electrode. Patent applicant: Hoshi Denki Manufacturing Co., Ltd.
Claims (1)
に形成された単結晶ゲルマニウム層と、そのゲルマニウ
ム層上に形成された一導電形の単結晶第１カリウム砒素
層と、その第１カリウム砒素層上に形成され、これとＰ
Ｎ接合を形成している逆導電形の単結晶第２カリウム砒
素層とよシなるＯａ Ａｓ発光素子。(1) A single-crystal silicon substrate, a single-crystal germanium layer formed on the silicon substrate, a single-crystal first potassium arsenide layer of one conductivity type formed on the germanium layer, and the first potassium arsenide layer. formed above, and this and P
An OaAs light emitting device with a single crystal second potassium arsenide layer of opposite conductivity type forming an N junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58057038A JPS59182582A (en) | 1983-04-01 | 1983-04-01 | Gallium arsenide light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58057038A JPS59182582A (en) | 1983-04-01 | 1983-04-01 | Gallium arsenide light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59182582A true JPS59182582A (en) | 1984-10-17 |
Family
ID=13044267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58057038A Pending JPS59182582A (en) | 1983-04-01 | 1983-04-01 | Gallium arsenide light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59182582A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5068695A (en) * | 1988-04-29 | 1991-11-26 | Sri International | Low dislocation density semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5016487A (en) * | 1973-04-30 | 1975-02-21 |
-
1983
- 1983-04-01 JP JP58057038A patent/JPS59182582A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5016487A (en) * | 1973-04-30 | 1975-02-21 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5068695A (en) * | 1988-04-29 | 1991-11-26 | Sri International | Low dislocation density semiconductor device |
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