JPS59182390A - Temperature detecting circuit of electronic timepiece - Google Patents
Temperature detecting circuit of electronic timepieceInfo
- Publication number
- JPS59182390A JPS59182390A JP5294884A JP5294884A JPS59182390A JP S59182390 A JPS59182390 A JP S59182390A JP 5294884 A JP5294884 A JP 5294884A JP 5294884 A JP5294884 A JP 5294884A JP S59182390 A JPS59182390 A JP S59182390A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- circuit
- detecting circuit
- resistances
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 7
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 102220200084 rs1057522320 Human genes 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G04—HOROLOGY
- G04F—TIME-INTERVAL MEASURING
- G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
- G04F5/04—Apparatus for producing preselected time intervals for use as timing standards using oscillators with electromechanical resonators producing electric oscillations or timing pulses
- G04F5/06—Apparatus for producing preselected time intervals for use as timing standards using oscillators with electromechanical resonators producing electric oscillations or timing pulses using piezoelectric resonators
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electric Clocks (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、温度補漬機０ヒを備えた電子時計における孟
度検出回路に係わシ、更に詳しくは、温度係数のダ゛４
なる複数個の抵抗とＣＭＯＳインバータ＋１４：により
構成される電子時ｄｔ用温度検出回路番て関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a temperature coefficient detection circuit in an electronic watch equipped with a temperature compensation device, and more specifically,
The temperature detection circuit for electronic time dt is composed of a plurality of resistors and a CMOS inverter +14.
本発明の目的は、簡便表電子時計用温度検出回路を提供
することであり、又、前記検出回路は、集積化され得る
回路構成とすることにある。An object of the present invention is to provide a simple temperature detection circuit for an electronic timepiece, and also to provide the detection circuit with a circuit configuration that can be integrated.
現在、電子時計の時間標準となる水晶振動子−は、ヤン
グ率の温度特性Ｋ特に依存した温度特性を待って訃り、
例えば５°×カツトの屈曲振動子の場合には、負の二次
係数（−１０〜１０７４０ｇ ）を持つ二次曲線となる
。従って水晶振動子の温度特性は、水晶式電子時計にと
って最も大きな対環境誤差原因となる。At present, the crystal oscillator that is the time standard for electronic watches has died after waiting for the temperature characteristic K, which is particularly dependent on the temperature characteristic of Young's modulus.
For example, in the case of a 5°×cut bending vibrator, it becomes a quadratic curve with a negative quadratic coefficient (-10 to 10740 g). Therefore, the temperature characteristics of the crystal oscillator are the biggest cause of environmental errors for quartz electronic watches.
従来より、この温度誤差を補正する為、！１μｌｆ ’
６量変化のある磁器コンデンサを用いる方法−や、時間
標準となる水晶発振器と、もう一つ別の発：最冷とを設
け、両°者の温度−周波数特性の違い力・ら、温度検出
し、基準信号発生・原の温度−周波数特性を補正する方
法等が使用されている。Conventionally, in order to correct this temperature error,! 1μlf'
A method using a ceramic capacitor with a variable quantity, a crystal oscillator that serves as a time standard, and another oscillator (the coldest one) is used to detect the temperature due to the difference in temperature-frequency characteristics between the two. However, methods of generating a reference signal and correcting the original temperature-frequency characteristics are used.
磁器コンデンサを使用する方法においては、補正精度は
言うまでもなく、水晶振動子と磁器コンデンサとの温度
特性の兼合いで決定される。従つて、精度を向上させよ
うとすれば、各々の特性の均一化、合せ込みの努力等、
極端に重荷となってく る。In the method using a magnetic capacitor, the correction accuracy is determined, of course, by the temperature characteristics of the crystal resonator and the magnetic capacitor. Therefore, in order to improve accuracy, it is necessary to make efforts to equalize and match each characteristic, etc.
It becomes an extremely heavy burden.
父、ニー）の発振器による補正の場合、６丑器コンデン
プに用の、場合に比べて、Ａ′ａ度面では多大の効果が
Ｊ舅待できる。しかし午ら、温度検出の為、基準１ゴ号
発生源の他に、もう−個の発振器が必要で心るへ１、温
度検出ｒ（際し−Ｃ１二つの発振周波数の周θＵ数弗等
を検出する検出回路を始めとする付加同品が必要であり
、それに伺属する制御回路も必要となり、補正回路自体
が大規模になってくる欠点をもっている。In the case of correction using the oscillator of the first and second oscillators, a greater effect can be obtained in terms of the A'a degree than in the case of the 6-meter condenser. However, in order to detect the temperature, in addition to the reference 1 G source, we need one more oscillator. This method requires additional components such as a detection circuit for detecting , and also requires a corresponding control circuit, which has the disadvantage that the correction circuit itself becomes large-scale.
そこで、最も簡便で一般的な方法は、サーミスタ等の感
温素子を用いる方法であるが、サーミスタは他の回路と
同一の半導体基板上に形成することができず、外付けと
しなければならない、このため小さね時計に組み込んだ
際に困難を伴なうと共に、製造コスト、部品コストの上
昇の原因となってい几。そこで本発明は同一半導体基板
上に温１ｌｉａ号の異なる二種類の信号を形成して温度
検出回路をモノリシックに形成するものでちる。第１図
は本発明の実施１＋すでちシ、１０１はＰ−ｃｈ１Ａｏ
ｓｙｇＴ又（Ｉ′ｊ：Ｐ Ｎ Ｐバイポーラトランジス
タ等によるスイッチである。１０２は抵抗素子、４０３
〜１０５（グ１０２の抵抗素子とは温度信号の異なる抵
抗素子、１０６〜１０８は温度検出用Ｃ−ＭＯＳインバ
ータである。１０９は前記１０６〜１０８の二値論理出
力から温度変換する為の変換回路であジ、これらは同一
半導体基板上に形成される。Therefore, the simplest and most common method is to use a temperature-sensitive element such as a thermistor, but the thermistor cannot be formed on the same semiconductor substrate as other circuits and must be attached externally. For this reason, it is difficult to incorporate it into a small clock, and it also causes an increase in manufacturing costs and component costs. Therefore, the present invention forms a temperature detection circuit monolithically by forming two types of signals of different temperatures on the same semiconductor substrate. FIG. 1 shows implementation 1+ of the present invention, 101 is P-ch1Ao
sygT or (I'j: A switch using a P N P bipolar transistor, etc. 102 is a resistive element, 403
~ 105 (The resistance element of 102 is a resistance element with a different temperature signal, 106 to 108 are C-MOS inverters for temperature detection. 109 is a conversion circuit for converting the temperature from the binary logic output of 106 to 108. Furthermore, these are formed on the same semiconductor substrate.
１０２の抵抗と１０３〜１０５の抵抗の温度精度を異な
らせるには、低濃度拡散抵抗、高温度拡散抵抗、ＭＯ８
抵抗等の温度信号の異なる抵抗を用いればよい。To make the temperature accuracy of the resistor 102 and resistors 103 to 105 different, low concentration diffused resistor, high temperature diffused resistor, MO8
It is sufficient to use a resistor such as a resistor that has a different temperature signal.
次に動作を説明する。ｔ（℃）Ｋおける、１［］２〜線
で示している。尚第２図、第６図、第５図、第７図にお
いて、温度による、ヘルミ準位の変化等によるＶｔｒの
温度変化は無視して書かれている。Next, the operation will be explained. It is shown by the 1[]2 to line at t(°C)K. Note that in FIGS. 2, 6, 5, and 7, temperature changes in Vtr due to changes in the Helmi level and the like due to temperature are ignored.
又、１０６〜１０８の０−ＭＯＳインバータの出力値を
Ｈ（日ｉｇｈ出力）又ｕＬ （Ｌｏｗ出力）のＩ記号で
、各温度域に対して次表に示した。In addition, the output values of the 0-MOS inverters 106 to 108 are shown in the following table for each temperature range using the I symbol of H (high output) or uL (low output).
以上のように本発明によればサーミスタを使用すること
なく集積化された温度検出回路が実施できる。次に、本
発明の他の実施例を説明する。一般に？−ミスタは負の
温度係数を持ち、抵抗が正の温度特性を持つのに対し、
集積化されｆＣ場合、温度係数は僅かに異なるが、共に
正の温度係数を持っている。その結果、集積化すること
によシ、温度変化に対する、Ｖ２３ 、 Ｖ３４ ＊
Ｖ４５ 等（７） Ｃ−ＭＯＳインバータへの入力値の
変化が少なくなる。その結果、１０５の抵抗の抵抗値を
順次、Ｒ２（ｔ） 、 Ｒ３（ｔ）。As described above, according to the present invention, an integrated temperature detection circuit can be implemented without using a thermistor. Next, another embodiment of the present invention will be described. in general? - A mister has a negative temperature coefficient, whereas a resistor has a positive temperature characteristic.
In the case of integrated fC, the temperature coefficients are slightly different, but both have positive temperature coefficients. As a result, by integrating V23 and V34* against temperature changes,
V45 etc. (7) Changes in the input value to the C-MOS inverter are reduced. As a result, the resistance values of the 105 resistors are sequentially R2(t) and R3(t).
Ｒ４（ｔ） 、 Ｒｓ（ｔ）とし、父、１０２と１０３
の接合部（ＮＯＤＢ）’（ｉ）Ｖ２３という如＜ Ｖ３
４ ＋ Ｖ４５を定めよう。R4(t), Rs(t), father, 102 and 103
Junction (NODB)' (i) V23 < V3
Let's determine 4 + V45.
すれば、Ｒ（ｔ）−Ｒｚ （ｔ）＋ Ｒａ （ｔ）＋Ｒ
ａ （ｔ）十Ｒｓ （ｔ）としたとき電源′電圧をＶＤ
Ｄとすると、
Ｖ２３−Ｖ ＤＤ （Ｒ３（ｔ）＋ Ｒ４（ｔ） ＋
Ｒｓ （ｔ） ）／Ｒ（ｔ）Ｖ３４＝ ’１’ＤＤ （
Ｒ４（ｔ）＋Ｒ５＜ｔ） ）Ｒ（ｔ）ｖ４５−ｖＤＤ−
Ｒ５（ｔ）／Ｒ（ｔ）となる。Then, R(t)−Rz(t)+Ra(t)+R
a (t) When 1Rs (t), the power supply voltage is VD
D, V23-V DD (R3(t)+R4(t)+
Rs (t) )/R(t)V34='1'DD (
R4(t)+R5<t) )R(t)v45-vDD-
R5(t)/R(t).
更に、ｔ（匂のときの１０６〜１０８のＣ−ＭＯＳイン
バータの入力値を、Ｖｔｒ（ｔ）とする。そして以下の
ように１０２〜１０６の抵抗の値を設定する。Furthermore, let the input value of the C-MOS inverter 106 to 108 at the time of t(off) be Vtr(t).Then, the value of the resistor 102 to 106 is set as follows.
ｔ＜ｔ、 ｖｔｒｒ（ｔ）＞ Ｖ２３ （ｔ）＞
Ｖ３４（ｔ） ＞ ｖ４５（ｔ）ｔ１≦ｔ＜ｔ２■２
３（ｔ）≧Ｖｔｒ （ｔ） ＞ Ｖ３４（ｔ）＞Ｖ４ｓ
（ｔ）ｔ２≦ｔ ＜ ｔ３Ｖ２３ （ｔ） ＞ Ｖ３４
（ｔ）≧Ｖｔｒ （ｔ） ＞ Ｖ４ ｓ （”）ｔ３
≦ｔ ｖ２３（ｔ） ＞ ■３４ （”） ＞
Ｖ４５（ｔ）≧ｖｔｒ（ｔ）第２図に、この様に設定さ
れた場合の温度変化に対する、Ｖｔｒ ｌ Ｖ２３ 、
ｖ３４１ ’Ｖ４５ （７）変化１１７）［略を直１
０５の抵抗の抵抗値を順次、Ｒ２（ｔ） 、 Ｒ３（ｔ
） 、 Ｒ４（ｔ） 。t<t, vtrr(t)> V23 (t)>
V34(t) > v45(t) t1≦t<t2■2
3(t)≧Vtr(t)>V34(t)>V4s
(t) t2≦t < t3V23 (t) > V34
(t)≧Vtr (t) > V4 s (”)t3
≦t v23 (t) > ■34 (”) >
V45(t)≧vtr(t) In Fig. 2, Vtr l V23,
v341 'V45 (7) Change 117) [Abbreviation 1
The resistance values of resistor 05 are sequentially determined as R2(t), R3(t
), R4(t).
Ｒ５（ｔ）とし、又、１０２と１０３の接合部（ＮｏＤ
Ｆｌ：）をＶ２３という如＜ Ｖ３４ 、 Ｖ４５を定
めよう。R5(t), and the junction of 102 and 103 (NoD
Let's define V34 and V45 as Fl:) is called V23.
すれば、Ｒ（ｔ） ＝ Ｒ２（１；） ＋ Ｒａ （ｔ
）十Ｒ４（ｔ）十Ｒ５（ｔ）としたとき、電源電圧をＶ
ＤＤとすると、
Ｖ２３ ＝ ＶＤＤ （Ｒ３（ｔ）十Ｒ４（ｔ）
十Ｒｓ（ｔ） ）／Ｒ（をンＶａ４ ＝ ＶＤＤ ＜
Ｒ４（ｔ）十Ｒ５（ｔ） ＞ Ｒ（ｔ）Ｖ４５−ＶＤ
Ｄ・Ｆｔｓ （ｔ）／Ｒ（ｔ）となる。Then, R(t) = R2(1;) + Ra (t
) 1R4(t) 1R5(t), the power supply voltage is V
Assuming DD, V23 = VDD (R3(t) + R4(t)
1Rs(t) )/R(Va4 = VDD <
R4(t) +R5(t) > R(t)V45-VD
D・Fts (t)/R(t).
更に、ｔ（匂のときの、１０６〜１０８のＣ−ＭＯＳイ
ンバータの入力閾値を、Ｖ ｔ ｒ （ｔ）とする。Furthermore, the input threshold value of the C-MOS inverters 106 to 108 at the time of t (smell) is assumed to be V tr (t).
ここでＶｔｒ（ｔ）は０−ＭＯＳインバータの出力が反
転する時の入力電圧であり、たとえばｖｚ３（ｔ）がＶ
ｔｒ（ｔ）より大きくなるとインバータ１０６の出力は
ＨからＬＫ反転する。そして以下のよう（て１０６〜１
０６の抵抗の値を設定する。Here, Vtr(t) is the input voltage when the output of the 0-MOS inverter is inverted; for example, when vz3(t) is V
When it becomes larger than tr(t), the output of the inverter 106 is inverted from H to LK. And as follows (te106~1
Set the value of resistance 06.
ｔ； ＜ ｔｌ ｖｔｒ（ｔ）＞Ｖｚ３（ｔ）＞
Ｖａ４（ｔ）＞ Ｖ４５（ｔ）ｔ１≦ｔ＜ｔ２ｖ２３（
ｔ）≧ｖｔｒ（ｔ）＞Ｖａ、ｔ（ｔ）＞Ｖ４ｓ（ｔ）ｔ
２≦ｔ＜ｔ３ Ｖ２３（ｔ）＞Ｖａ４（ｔ）、、＝Ｖ
ｔｒ（ｔ）＞Ｖ４５（ｔ）ｔ３ ≦ｔＶ２３（ｔ）＞
ｖａ４ｆｔ）＞Ｖ４ｓ（ｔ）ｇＶｔｒ（ｔ）第２図に、
この様に設定された場合の温度変化に対する、”” ■
２３ ｒ Ｖａ４ ＋ ｖ４５の変化の概略を直１０２
〜１０５の抵抗値の決定に余裕がなくなることがある。t; <tl vtr(t)>Vz3(t)>
Va4(t)>V45(t)t1≦t<t2v23(
t)≧vtr(t)>Va, t(t)>V4s(t)t
2≦t<t3 V23(t)>Va4(t),,=V
tr(t)>V45(t)t3≦tV23(t)>
va4ft)>V4s(t)gVtr(t) In Figure 2,
”” ■
23 r The outline of the change in Va4 + v45 is directly 102
There may be no margin in determining the resistance value of ~105.
第５図の実施例では温度上昇に対して、０−ＭＯＳイン
バータの閾値を順次、変化してゆく様に制御するもので
ある。In the embodiment shown in FIG. 5, the threshold value of the 0-MOS inverter is controlled to be changed sequentially as the temperature rises.
第５図に於いて、４０２〜４０５は拡散抵抗又はＭＯＳ
抵抗であって、例えば４０２全高磯度−拡散抵抗、４０
６〜４０５を低濃度−拡散抵抗で作製したとすれば、ｖ
２３ ＋ Ｖａ４ ＊ Ｖ４５ は、温度上昇と共に
増加する特性全書ることが出来る。一方、４０９〜４１
４も集積化された抵抗であって、例えば４０９＝、４１
１及び４１３を低濃度−拡散抵抗４１ ｔｌ 、 ４１
２及び４１４を高濃度−拡散抵抗で作製したとすれば０
−ＭＯＳインバータ４０６〜４０８のＰ ｃ ｈ １ｌ
ｌｌソ一ス電位は、温度上昇と共に減少する特性を得る
。その結果、温度検出用０−ＭＯＳインバータの入力閾
値電圧は温度上昇と共に減少する事（てなり、入力電圧
Ｖ２３ 、 Ｖａ４ 、 Ｖ４５の増加とによシ相乗効
果を持たせる事が出来る。In Fig. 5, 402 to 405 are diffused resistors or MOS
resistance, for example 402 total height - diffusion resistance, 40
If 6 to 405 were made with low concentration and diffused resistance, v
23 + Va4 * V45 can be written as a characteristic that increases with increasing temperature. On the other hand, 409-41
4 is also an integrated resistor, for example 409=, 41
1 and 413 as low concentration-diffused resistance 41 tl, 41
If 2 and 414 are made with high concentration and diffused resistance, then 0
- P c h 1l of MOS inverters 406 to 408
The Il source potential has a characteristic of decreasing as the temperature rises. As a result, the input threshold voltage of the 0-MOS inverter for temperature detection decreases as the temperature rises, creating a synergistic effect with increases in the input voltages V23, Va4, and V45.
第４図は、第６図の回路を使用したときの第２図面等図
である。FIG. 4 is a second drawing etc. when the circuit of FIG. 6 is used.
第４図及び第６図において、ＶＤＤ 、 ｖｓｓ 、
Ｖｔｒのカッコ内の添字は各々第３図及び第５図のＣ−
ＭＯＥ＋インバータに関するＰ−ｃｈ、ンース屯圧ｎ
−Ｏｈソース電圧、入力閾値ＩＥ圧である。In FIGS. 4 and 6, VDD, vss,
The subscripts in parentheses for Vtr are C- in Figures 3 and 5, respectively.
P-ch related to MOE + inverter, tonne pressure n
-Oh source voltage, input threshold IE voltage.
第５図は、第３図の回路に６１５〜６２０の抵抗を加え
第２の分圧回路を４成することによシ、温ＩＷ検出用の
Ｃ−ＭＯＳインバータのｎ −ｃり側、ソース電位をも
温度上昇と共に減少させ、第３図の場合以上に入力閾値
電圧の温度変化を大きくした本発明の実施例である。FIG. 5 shows that by adding resistors of 615 to 620 to the circuit of FIG. 3 to form a second voltage dividing circuit of 4, This is an embodiment of the present invention in which the potential is also decreased as the temperature rises, and the temperature change in the input threshold voltage is greater than in the case of FIG. 3.
第６図（は、箒５図の回路を使用した場合の第１区間等
図である。第５図の実施列の方が、素子数が多くなる不
利を有するが、効果は第５図の実施・列に比べて太きい
。又、ｎ−を基板とする通常のＣ−ＭＯＳにおいてはｎ
ｃｈ狽１ｊのサブストレートの分離には工程増加となる
が、５ｏｓ（シリコンオンサファイア）（＋−用いれば
６易ｒ（なる。Figure 6 is the first section isometric diagram when the circuit in Figure 5 is used. The implementation array in Figure 5 has the disadvantage of having more elements, but the effect is It is thicker than the implementation/column.Also, in a normal C-MOS with an n- substrate, the n
Separation of the substrate of channel 1j requires an additional step, but if 5os (silicon on sapphire) (+-) is used, it will be 6 eas.
以上の如く、本発明は、従米果債化の要求を待ちながら
も、サーミスタを使用していた温度検出回路ケ温１更信
号の異なる２種類の抵抗金回−半導体基板上に形成する
ことにより、完全集積化温度検出回路を実現し良もので
、これにより小型化への要求の晶い電子時計に装、・ｕ
を可能にし、高精度電子時計の提供に貝１吠することか
できた。As described above, the present invention has been developed by forming two types of resistors with different temperature signals on a gold-semiconductor substrate, in order to replace the temperature detection circuit that used a thermistor, while waiting for the demand to become more flexible. , a fully integrated temperature detection circuit has been realized, which makes it possible to install it in electronic watches that are increasingly required to be miniaturized.
This made it possible to provide high-precision electronic clocks.
第１図（は、本発明の温度検出回路の一実施例である。
第２図は、第１図の回路の温度−電圧！特性である。
第３図は、本発明の他の実施例となる温度検出回路であ
る。
第４図は、第３図の回路のａ度−゛電圧特性である。
第５図は、本発明の他の実施例である。
化６図は、第５図の回路の温度−電圧特性である。。
以 上
出願人 株式会社 諏訪精工舎
代理人 弁理士最上 務FIG. 1 (shows one embodiment of the temperature detection circuit of the present invention). FIG. 2 shows the temperature-voltage characteristics of the circuit of FIG. 1. FIG. 3 shows another embodiment of the present invention. FIG. 4 shows the a-degree-voltage characteristics of the circuit shown in FIG. 3. FIG. 5 shows another embodiment of the present invention. These are the temperature-voltage characteristics of the circuit shown in the figure.Applicant Suwa Seikosha Co., Ltd. Agent Patent Attorney Tsutomu Mogami
Claims (1)
・、′８号発生源の温度−周波数特性？補償する電子’
Ｉ′ｉ’ ｔｌ’ ｌ’ζおいて、前記温度ノ次出回路
ケよ、異なる温ｌｙ係故全もつ抵抗群よりなり複数の分
圧点を有する１ｊ７１の分圧回路、前記第１の分圧回路
の複数の分圧点かＬり〆０出力をゲート入力とする醸成
のＣ−ＭＯＳインバータ及び前３Ｑ Ｏ”’ Ｍ ＯＳ
インバータの出力を温変信号Ｖζ変換する変換１１２＋
届よりなることを特徴とする電子時計用温度検出回路。(]1 Based on each output from the temperature detection circuit, the reference... '8 Temperature-frequency characteristics of the source? Compensating electrons'
I'i'tl'l'ζ, the temperature output circuit is a 1j71 voltage divider circuit which is made up of a group of resistors with different temperature coefficients and has a plurality of voltage dividing points; A C-MOS inverter and front 3Q O"' MOS that use multiple voltage division points of the pressure circuit as gate inputs and the low output and 0 outputs as gate inputs.
Conversion 112+ that converts the output of the inverter into a temperature change signal Vζ
A temperature detection circuit for an electronic watch, characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5294884A JPS59182390A (en) | 1984-03-19 | 1984-03-19 | Temperature detecting circuit of electronic timepiece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5294884A JPS59182390A (en) | 1984-03-19 | 1984-03-19 | Temperature detecting circuit of electronic timepiece |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51158587A Division JPS6020924B2 (en) | 1976-12-28 | 1976-12-28 | Temperature detection circuit for electronic watches |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59182390A true JPS59182390A (en) | 1984-10-17 |
| JPS6142205B2 JPS6142205B2 (en) | 1986-09-19 |
Family
ID=12929096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5294884A Granted JPS59182390A (en) | 1984-03-19 | 1984-03-19 | Temperature detecting circuit of electronic timepiece |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59182390A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01110002U (en) * | 1988-01-18 | 1989-07-25 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49110391A (en) * | 1973-02-20 | 1974-10-21 | ||
| JPS5162964A (en) * | 1974-11-29 | 1976-05-31 | Citizen Watch Co Ltd | ONDOHOSHOSUISHOHATSUSHINKAIRO |
-
1984
- 1984-03-19 JP JP5294884A patent/JPS59182390A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49110391A (en) * | 1973-02-20 | 1974-10-21 | ||
| JPS5162964A (en) * | 1974-11-29 | 1976-05-31 | Citizen Watch Co Ltd | ONDOHOSHOSUISHOHATSUSHINKAIRO |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6142205B2 (en) | 1986-09-19 |
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