JPS59180879A - Magnetic bubble memory element - Google Patents

Abstract

PURPOSE:To obtain a magnetic bubble memory element of large capacity which has a suppressed increment of the element area and the reduced deterioration of characteristics, by providing at least a defective loop information storage part in addition to an information storage part and sharing the detection part of the defective loop informtion part with that of the informtion storage part. CONSTITUTION:The minor loops 20 of even blocks are arranged side by side the minor loops 21 of odd blocks. A detector 27 is set at the upper right part of those loops, and two boot loops 28 and 28' are provided in a blank space at the left side of the detector 27. Then bubble generators 29 and 29' and major transfer lines 30 and 30' as well as 33 and 33' are provided to the loops 28 and 28' respectively. The information on these loops 28 and 28' are read out by sharing the detector 27 of the loops 20 and 21. In such a constitution, the conductor patterns of replicate gates 32 and 32' for loops 28 and 28' are distributed with no cross to major transfer lines 33 and 33' in order to prevent the deterioration of characteristics. In addition, the increment of the element area can be suppressed owing to the formation of the loops 28 and 28' in a blank space of a magnetic bubble memory element.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) 6 Technical Field of the Invention The present invention relates to a magnetic bubble memory element used in a storage device of an electronic computing device or its terminal.

(2) Background of the technology Magnetic bubble utilization devices that use magnetic bubbles to store information, perform logical operations, etc. have various characteristics such as non-volatility, high storage density, low power consumption, small size and light weight. Since it is a solid-state device that does not contain any mechanical elements, it has extremely high reliability, and therefore has great expectations for its future use as a large-capacity memory.

(3) Prior Art and Problems FIG. 1 is a diagram showing the structure of a conventional odd/even type bubble memory chip, for example, a 1M bit chip. In the same figure, A is an even block, B is an odd block, 1.1'
is a bubble generator, 2 is an even-numbered block miner loop,
3 is a minor loop for odd blocks, 4.4' is a write major transfer path, 5 is a swap dart that forms a write dart, and 6 is a replica that forms a read card.)
r-1, 7, 7' are detectors, 8.8' is a read major transfer path, 9, 9' is a boot roof that forms a defective loop information storage section, and 10 is a swap that forms a write date for the boot loop. Darts and 11 respectively indicate replicate dates forming read darts for the boot loop.

This odd/even type magnetic bubble memory device has a minor loop group 2゜3 forming two information storage sections, bubble generators 1 and 1', and a write major transfer path 4.
, 4', readout measure transfer path 8°8', detector 6
, 6' are connected, boot loops 9, 9' are connected to each block one by one, bubble generators 1, 1', write major transfer paths 4, 4' and detectors 7, 7' are connected to minor blocks. It is shared with the loop. If such a method were to be applied to a higher-density, for example, 4M bit chip, the element area would increase, and as shown in Figure 2, the number of detectors 7 would be reduced to one in order to use the chip area more effectively. In this case, the boot loop readout transfer path 8 is connected to the readout conductor 8a, so the current flowing through the readout conductor 8a affects the bubble being transferred through the readout transfer path 8, causing a malfunction in its operation. There were problems such as deterioration of characteristics.

(4) 1. Purpose of the Invention In view of the above-mentioned conventional problems, it is an object of the present invention to provide a large-capacity magnetic bubble memory device that suppresses an increase in device area and does not cause deterioration in characteristics.

(5) Configuration and object of the invention According to the present invention, at least one bad loop information storage unit υ10 is provided separately from the information storage unit formed by a plurality of minor loops, and the bad loop m information is Magnetic bubble generator for writing defective loop information to the storage section, @'sakomiyō major transfer path, %write r-
), a readout dart for reading out defective loop information, and a readout major transfer path, and is configured to share the detection of defective loop information with the detection section of the information storage section. This is achieved by providing an element. .

(6) Example of 0 invention Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 3 is a diagram for explaining a magnetic bubble memory device according to the present invention. In the figure, 20 is a minor loop as an information storage unit for even blocks, 21 is a minor loop as an information storage unit for odd blocks, and 22 r 2
Bubble generator for 2J minor-Luso, 23.23' is write major transfer path for minor loop, 24.24'
is the swap gate for the minor loop, 25.25' is the delicate gate for the minor loop, 2'6, 2
6' is the read major transfer path for the minor loop, 27
is a detector, 28.28' is a boot roof as a defective loop information storage section, 29.29' is a bubble generator for boot loop, 30.30' is a write measure transfer path for boot loop, and 31.31' is a Swap r for bootloop
-), 32, 32' are for the boot loop and the replica 1f
33 and 33' respectively indicate the read major transfer path for the boot loop.

In this embodiment, as shown in the figure, minor loops 20 of even blocks and minor loops 21 of odd blocks are arranged side by side, and a detector 27 is placed in the upper right corner of the minor loops 20, and a boot roof 28, 28' is placed in the left margin. A bubble generator 29.29' and a major transfer path 30.30' are installed in each boot loop.

33 and 33' are provided, and information on the boot loops 28 and 28' is read out by using the detectors 27 of the minor loops 20 and 21 in common.

In this embodiment configured in this way, the boot loop 28.
28' resolike If-) 32. 32' conductor i9
Since the turns are arranged so as not to intersect the Menoyah transfer paths 33 and 33', there is no characteristic deterioration, and furthermore, since the boot loops 28 and 28' are arranged in the margin of the element, an increase in the element area can be suppressed.

In the Nao-hit configuration, the number of bits from the bubble generator 22 of the even block to the swap dart 24 is n, and the number of bits from the bubble generator 22' of the odd block to the swap dart 22 is set to n.
Let the number of bits up to 4' be n+1 (also Id n -1), and from the replicate date 25 of the even block to the detector 2
m the number of bits up to 7, replication of odd blocks) r
-) By setting the number of bits from 25' to the detector 27 to m-1 (or m+1), the length of the transfer path for even and odd blocks is (n+m) for iM blocks and (n+1) for odd blocks. +(m-1) and both are equal and the position of the minor roof '20.21 is shifted by 1 bit, so the bubble generators 22 and 22' alternately write to even and odd blocks, and the detector 27 writes to even and odd blocks. Information can be read from blocks alternately.

This is similar to the conventional odd U/even number system.

Also, in the two boot loops 28 and 28', the number of bits from the bubble generator 29 and 29' to the swap dirt 31°31' is set to n+2. n+3, swap ket detector 2 from 32.32'
Assuming the number of bits up to 7 as m-2゜m-3,
The sum of each transfer path is n −1 as in the case of the minor loop.
-m and by shifting the positions of the boot loops 28 and 28' by 1 bit, the bubble generator 29.29' writes to the boot loop f28.28' alternately, and the detector 27 reads information alternately. It is possible to maintain compatibility with the conventional configuration shown in FIG.

Figures 4 to 6 are diagrams for explaining an actual example in which the present invention is applied to a 4M bit device, where Figure 4 is a schematic diagram, Figure 5 is a 1M bit block thereof, and Figure 6 is bubble transfer. Each indicates the no and the turn of the road.

The 4M bit device shown in Fig. 4 has four 1M bit blocks I~■ formed on one device, and each block has a minor loop 40 for even blocks, a minor loop 41 for odd blocks, a boot loop 42, and bubble detection. A container 43 is formed.

FIG. 5 is an enlarged view of a 1M bit block of the device shown in FIG. Loop, 43 is the bubble detector, 44 is the bubble detector dummy, 45.45' is the terminal for the bubble generator conductor, 46.46' is the terminal for the Swasozort conductor, 47°47' is for the replicate gate. Terminal of the conductor, 48 is the terminal of the conductor of the bubble generator for the boot loop, 49° 49' is the terminal of the conductor of the swap dart for the boot loop, 50.50' is the terminal of the conductor of the replicate gate for the boot loop, 51 is the bubble generator terminal. Detector terminal, 52
indicates a dummy terminal, and 53 indicates a common terminal between the bubble detector and the dummy.

The transfer pattern shown in FIG. 6 is a wide gap type transfer pattern, in which a is used for a minor loop at a pitch of 4 μm, and b is used for a boot loop at a pitch of 8 μm.

This 4M bit device is connected to the boot loop 42 as shown in FIG.
, 42' to the bubble detector 43.
' and the conductor 55 for the boot loop replicate r-) are formed without crossing each other, so that the transfer paths 54, 54
The bubble transferred ' is not affected by the current flowing through the conductor 55. Note that the replicate gate conductor 56 of the minor loop intersects with the transfer path 54.54', but this is because the minor loop is not read during boot loop reading, so the data is transferred through the transfer path 54.54'. It has nothing to do with the bubble.

Furthermore, in the conventional odd/even method, since the bubble detector and dummy were formed adjacent to each other, information could only be read every other bit, so one detection was required for each odd and even block. However, in the present invention, the bubble detector 43 and the dummy 44 are arranged separately as shown in FIG. 5, and the bubbles exiting the bubble detector 43 are discarded by a guardrail. ,
Each bit can be read out, and one detector 43 can alternately read out information from odd and odd blocks.

(7) 6 Effects of the Invention As explained in detail above, the magnetic bubble memory element of the present invention combines the two boot loops required for each IM bit in one place, and adds a new bubble generator, write/read transfer path. By using one detector and sharing it with the one for information reading, it is possible to suppress an increase in the element area, eliminate deterioration of the boot loop information read characteristics, and realize a large capacity memory. It is.

[Brief explanation of the drawing]

1 and 2 are diagrams for explaining the conventional magnetic bubble memory device, and FIG. 3 is for explaining the magnetic bubble memory device according to the present invention. 22' is for the minor loop. Bubble generator, 23.23' is the omitted major transfer path for the minor loop, 24.24' is the swap date for the minor loop, 25.25' is the replicate r-) for the minor loop, 26.26' is the one to the minor loop. 27 is a detector, 28.2
8' is the boot loop, 29.29' is the bubble generator for the boot loop, 30 and 30' are the write major transfer paths for the boot loop, 31.31' is the boot loop swazzort, and 32 and 32' are the bootloop bubble generator. Reference numerals 33 and 33' denote read major transfer paths for the boot loop, respectively. Patent applicant Fujitsu Ltd. Patent agent Akira Giki Patent attorney Kazuyuki Nishidate (1) Yukio Patent attorney Akira Yamaguchi Figure 1, Figure 2, 7', 5 ゝ□Y- ″−Y−″−Y−′ +V++ −1γ−
-”-M-'l S
i l L
+46 45 47 46'
45 47'Figure 6 (0)

Claims (1)

[Scope of Claims] At least one defective loop information storage section is provided separately from the information storage section formed by the plurality of minor loops, and the defective loop information is stored in the defective loop information storage section.
: A magnetic bubble generator for reading, a write measure transfer path, a write gate, a read gate for reading out defective loop information, and a read measure transfer path; A magnetic bubble memory device characterized in that it is configured to be used in common with a detection unit. (2. The number of bits in the write r-t connected from the defective loop information bubble generator to the defective loop information storage section and the read r- connected to the defective loop information storage section) to the detector. The sum of the number of bits is the number of bits from the bubble generator for the information storage section to the write gate connected to the information storage section and the number of bits from the read gate connected to the information storage section to the detection section. 2. The magnetic bubble memory device according to claim 1, wherein the number of bits is equal to the sum of the number of bits. 3- The magnetic bubble memory device according to claim 1, wherein the write gate is a swap date and the read gate is a replicate gate.