JPS5917849B2 - How to recycle semiconductor devices - Google Patents

How to recycle semiconductor devices

Info

Publication number
JPS5917849B2
JPS5917849B2 JP52032674A JP3267477A JPS5917849B2 JP S5917849 B2 JPS5917849 B2 JP S5917849B2 JP 52032674 A JP52032674 A JP 52032674A JP 3267477 A JP3267477 A JP 3267477A JP S5917849 B2 JPS5917849 B2 JP S5917849B2
Authority
JP
Japan
Prior art keywords
conductive pattern
beam lead
integrated circuit
cutter
remaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52032674A
Other languages
Japanese (ja)
Other versions
JPS53117969A (en
Inventor
孝次 芹澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP52032674A priority Critical patent/JPS5917849B2/en
Publication of JPS53117969A publication Critical patent/JPS53117969A/en
Publication of JPS5917849B2 publication Critical patent/JPS5917849B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明は、ビームリード集積回路を搭載した半導体装置
の再生法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for remanufacturing a semiconductor device equipped with a beam lead integrated circuit.

最近、半導体装置の高密度化に伴い同一基板上に複数の
ビームリード集積回路を搭載したものが多くなつている
Recently, with the increase in the density of semiconductor devices, many devices have a plurality of beam lead integrated circuits mounted on the same substrate.

第1図および第2図はかゝる半導体装置の概要を示し、
1はビームリード集積回囲、2はその表面側の周囲から
突き出す複数のビ 3−ムリード、3はセラミックその
他からなる基板であり、その基板上には所望回路を形成
するよう導電パターン4が被着されている。ビームリー
ド2には周知のように化学的に安定でありしかも柔らか
くてボンディングが容易であるなどの利点をもの金(A
u)を主体にしたものが使用される。5 基板3には多
数の集積回路1が取付けられるが、その取付け部の導電
パターン4は集積回路1からのビームリード突出パター
ンと同じパターンとなつている。
FIG. 1 and FIG. 2 show an outline of such a semiconductor device,
1 is a beam lead integrated circuit; 2 is a plurality of beam leads protruding from the periphery of the front side; 3 is a substrate made of ceramic or other material; and a conductive pattern 4 is coated on the substrate to form a desired circuit. It is worn. As is well known, Beam Lead 2 has the advantages of being chemically stable, soft and easy to bond.
Those mainly based on u) are used. 5. A large number of integrated circuits 1 are mounted on the substrate 3, and the conductive pattern 4 of the mounting portion has the same pattern as the beam lead protrusion pattern from the integrated circuits 1.

従つて取付けに際しては集積回路1をフェイスダウンつ
まり回路素子が形成された集積10回路表面側を下にし
、ビームリード2を導電パターン4に合せることにより
全ビームリードの当該導電パターンとの位置決めが完了
し、かゝる状態で例えば熱圧着によるボンディングを行
なうことにより全ビームリードを同時に導電パターンに
接15着し、こうして基板3に集積回路1を取付けるこ
とができる。以上の様にして同一基板上に多数の集積回
路を搭載してなる半導体装置を例えば電子計算機に組込
んで使用中にその一部の集積回路が何らかの原’0因で
機能不良となると当然交換する必要が生じるが、この際
多数の集積回路を備える半導体装置全体を交換すると
価につくので、その不良集積回路を除去して新しい良品
集積回路と交換する必要に迫られる。
Therefore, when installing, place the integrated circuit 1 face down, that is, with the surface side of the integrated circuit 10 on which circuit elements are formed facing down, and align the beam lead 2 with the conductive pattern 4 to complete the positioning of all beam leads with the conductive pattern. However, by performing bonding, for example, by thermocompression in such a state, all the beam leads can be simultaneously attached to the conductive pattern 15, and thus the integrated circuit 1 can be attached to the substrate 3. As described above, if a semiconductor device with a large number of integrated circuits mounted on the same substrate is incorporated into a computer and some of the integrated circuits become malfunctioning for some reason, it will naturally be replaced. However, in this case, if the entire semiconductor device containing a large number of integrated circuits is replaced,
As the cost increases, it is necessary to remove the defective integrated circuit and replace it with a new good integrated circuit.

この交換にはボンディングされてい’5 る不良集積回
路のビームリードを例えば第3図に示すようにカッター
5などで全部切り落して該集積回路を取り除き、その部
分へ新しい集積回路をボンディングすればよい訳である
が、不良集積回路を取り除いた導電パターン部分には第
4図に示0すように切り落したビームリードの残部2a
が固着されているので、これを除かないと、新集積回路
のビームリードボンディングは所望通り確実に行1よう
ことができない。ビームリード残部の除去は再びカッタ
ーなどを5用いて行なおうとすると、ビームリードは殆
んどが金(Au)からなっていて柔かいので導電パター
ンに固着した一部がカッターによる切断の際髭状に伸び
、線間短絡を生じる恐れが生ずる。
For this replacement, the beam leads of the defective integrated circuit that has been bonded can be completely cut off using a cutter 5, for example, as shown in Figure 3, the integrated circuit can be removed, and a new integrated circuit can be bonded to that part. However, the remaining portion 2a of the cut off beam lead is attached to the conductive pattern part from which the defective integrated circuit has been removed, as shown in FIG.
If this is not removed, beam lead bonding of the new integrated circuit cannot be performed reliably as desired. When attempting to remove the remaining portion of the beam lead again using a cutter, the beam lead is mostly made of gold (Au) and is soft, so some of the remaining parts of the beam lead stuck to the conductive pattern may form whiskers when cut with the cutter. There is a risk of short circuits occurring between the lines.

本発明はこの導電パターン上に残つたビームリードを除
去する有効適切な方法を提案するものである。本発明は
導電パターンを形成された共通基板上に複数の集積回路
を、そのビームリードを導電パターンにボンデイングす
ることにより取付けてなる半導体装置の再生法において
、不良集積回路を共通基板からそのビームリードを切断
して除去し、導電パターンに固着したビームリード残部
を、振動を加えたカツタ一により導電パターンから除去
し、その跡へ良品集積回路をビームリードボンデイング
により取付けることを特徴とするものであるが次に実施
例を参照しながらこれを詳細(ζ説明する。第5図は本
発明の実施例を示し、この図において2aは前述のよう
にビームリード残部、3は基板、4は導電パターンであ
る。
The present invention proposes an effective and appropriate method for removing the beam lead remaining on this conductive pattern. The present invention relates to a method for remanufacturing a semiconductor device in which a plurality of integrated circuits are mounted on a common substrate on which a conductive pattern is formed by bonding their beam leads to the conductive pattern. The remaining part of the beam lead stuck to the conductive pattern is removed from the conductive pattern using a vibrating cutter, and a good integrated circuit is attached to the remaining part by beam lead bonding. Next, this will be explained in detail with reference to an embodiment. Fig. 5 shows an embodiment of the present invention, in which 2a is the remainder of the beam lead as described above, 3 is a substrate, and 4 is a conductive pattern. It is.

6は固定台であり真空チヤツク6aを備え、この真空チ
ヤツク6aにより基板3は固定台6に固定される。
Reference numeral 6 denotes a fixing table, which is equipped with a vacuum chuck 6a, and the substrate 3 is fixed to the fixing table 6 by this vacuum chuck 6a.

固定台6は基盤9上を図面左右方向に移動できる。7は
超音波振動装置であり上下調整機構(図示しない)と振
動機構8を備え、振動機構8は振動子8aと超音波信号
を受けて該振動子を振動させるコイル8bを備える。
The fixed base 6 can move on the base 9 in the horizontal direction in the drawing. Reference numeral 7 denotes an ultrasonic vibrating device, which includes a vertical adjustment mechanism (not shown) and a vibrating mechanism 8. The vibrating mechanism 8 includes a vibrator 8a and a coil 8b that receives an ultrasonic signal and vibrates the vibrator.

振動子8aの先端にはカツタ一5を取り付ける。次にこ
の装置の動作を説明する。
A cutter 5 is attached to the tip of the vibrator 8a. Next, the operation of this device will be explained.

先ず不良集積回路を除去した基板3を固定台6上に載置
し、真空チヤツク6aにより該基板を固定台に吸着固定
し、固定台6を移動させて削り取るべきリード片残部2
aの複数個の端面がカツタ一5に当接し得るようにする
。カツタ一5は振動子8aの先端から垂直に下降してお
り、その先端位置は超音波振動装置7の上下調整機構の
微調整ねじ(図示しない)を操作することにより正確に
調節することができるので、カツタ一5はその先端位置
が導電パターン4に接する又は微小間隔を介して対向す
る高さに設定する。か\る状態でコイル8bを付勢して
振動子8aを従つてカツタ一5を超音波振動させ、固定
台6を超音波振動装置7方向に移動させる。この結果ビ
ームリード残部2aの複数個がその端面からカツタ一5
に圧接され、超音波振動により切除されていく。カツタ
一5により同時に除去されるビームリード残部の個数は
カツタ一の巾に従つて定まるのでカツタ一巾を変えるこ
と:こより適当に選ぶことができる。
First, the board 3 from which the defective integrated circuit has been removed is placed on the fixing table 6, and the board is suctioned and fixed to the fixing table by the vacuum chuck 6a, and the remaining lead piece 2 to be scraped off by moving the fixing table 6.
A plurality of end faces of a can be brought into contact with the cutter 5. The cutter 5 descends vertically from the tip of the vibrator 8a, and its tip position can be adjusted accurately by operating a fine adjustment screw (not shown) of the vertical adjustment mechanism of the ultrasonic vibrator 7. Therefore, the cutter 5 is set at a height such that its tip is in contact with the conductive pattern 4 or faces the conductive pattern 4 with a small distance therebetween. In this state, the coil 8b is energized to ultrasonically vibrate the vibrator 8a and the cutter 5, and the fixed base 6 is moved in the direction of the ultrasonic vibrator 7. As a result, a plurality of beam lead remaining portions 2a are removed from the end face by the cutter 5.
It is pressed into contact with the body and removed by ultrasonic vibration. The number of remaining beam leads to be simultaneously removed by the cutter 5 is determined according to the width of the cutter 1, so it can be appropriately selected by changing the width of the cutter.

上記と同様操作を繰り返して4辺全部のビームリード残
部を除去したら、新しい良品集積回路を、取除いた不良
集積回路位置へ置き、そのビームリードを導電パターン
へ位置合せしたのち熱圧着など:こよりボンデイングし
、交換を完了する。このようにして本発明によれば、基
板上の導電パターンを傷めることなくビームリード残部
を除去し、不良集積回路位置へ良品集積回路を取付けて
故障半導体装置を何度でも再生させることができる。
After repeating the same operation as above to remove the remaining beam leads on all four sides, place a new good integrated circuit in the position of the removed defective integrated circuit, align the beam lead with the conductive pattern, and then bond by thermocompression, etc. Bonding and complete the exchange. In this way, according to the present invention, the remaining portion of the beam lead can be removed without damaging the conductive pattern on the substrate, a good integrated circuit can be installed in the position of the defective integrated circuit, and a failed semiconductor device can be regenerated any number of times.

この方法はカツタ一に振動を加えるのみであるから簡単
であり、しかも振動を加えることなく単にカツタ一で切
除した場合のようにビームリード残部が一部 状に伸び
て端子間を短絡させる等が心配がなく、確実にビームリ
ード残部を除去して信頼性ある修復を行なうことができ
る。なお超音波振動を加えたカツタ一でビームリード残
部を切除する代り:こ、カツタ一刃部を平面状にしてこ
れをビームリード残部へ上方から押し当て超音波振動を
加えて押圧することによりビームリード残部を平坦化し
てもよい。この場合は良品集積回路のビームリードを導
電パターンに、該平坦化した不良集積回路のビームリー
ド残部を介してボンデイングすることができ、やはり故
傷半導体装置の再生が可能である。またカツタ一に加え
る振動は、振動数が相当に大であれば同様な効果が得ら
れ、必ずしも超音波振動でなくてもよい。
This method is simple because it only applies vibration to the cutter, and it does not cause the remaining beam lead to stretch partially and cause a short circuit between the terminals, as would be the case if the beam lead was simply cut with the cutter without applying vibration. There is no need to worry, and the remaining beam lead can be reliably removed to perform reliable repair. Instead of cutting off the remaining part of the beam lead with a cutter applied with ultrasonic vibrations: By making the cutter blade part flat and pressing it against the remaining part of the beam lead from above and applying ultrasonic vibrations, the beam can be removed. The remainder of the lead may be flattened. In this case, the beam lead of the good integrated circuit can be bonded to the conductive pattern via the flattened remaining beam lead of the defective integrated circuit, and the damaged semiconductor device can also be regenerated. Further, the vibration applied to the cutter does not necessarily have to be ultrasonic vibration, as long as the frequency is considerably high, a similar effect can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は多数の集積回路を搭載した半導体
装置の一部を示す平面図および断面図、第3図および第
4図は不良集積回路の除去工程を説明する断面図、第5
図は本発明の実施例の説明図である。 1:集積回路、2:ビームリード、2a:ビームリード
残部、3:基板、4:導電パターン、5:カツタ一、−
6:固定台、6a:真空チヤツク、7:超音波振動、8
:振動機構、8a:振動子、8b:コイル、9:基盤。
1 and 2 are a plan view and a cross-sectional view showing a part of a semiconductor device equipped with a large number of integrated circuits, FIGS. 3 and 4 are cross-sectional views illustrating the process of removing defective integrated circuits, and FIG.
The figure is an explanatory diagram of an embodiment of the present invention. 1: integrated circuit, 2: beam lead, 2a: remainder of beam lead, 3: substrate, 4: conductive pattern, 5: cutter, -
6: Fixed base, 6a: Vacuum chuck, 7: Ultrasonic vibration, 8
: Vibration mechanism, 8a: Vibrator, 8b: Coil, 9: Base.

Claims (1)

【特許請求の範囲】 1 導電パターンを形成された共通基板上に複数の集積
回路を、そのビームリードを導電パターンにボンディン
グすることにより取付けてなる半導体装置の再生法にお
いて、不良集積回路を共通基板からそのビームリードを
切断して除去し、導電パターンに固着したビームリード
残部を、振動を加えたカッターにより導電パターンから
除去し、その跡へ良品集積回路をビームリードボンディ
ングにより取付けることを特徴とした半導体装置の再生
法。 2 カッターに加える振動が超音波振動であることを特
徴とする特許請求の範囲第1項記載の半導体装置の再生
法。
[Claims] 1. In a semiconductor device remanufacturing method in which a plurality of integrated circuits are mounted on a common substrate on which a conductive pattern is formed by bonding their beam leads to the conductive pattern, a defective integrated circuit is attached to the common substrate. The beam lead is cut and removed from the conductive pattern, the remaining beam lead stuck to the conductive pattern is removed from the conductive pattern using a vibrated cutter, and a good integrated circuit is attached to the trace by beam lead bonding. Method for recycling semiconductor devices. 2. The method for regenerating a semiconductor device according to claim 1, wherein the vibration applied to the cutter is an ultrasonic vibration.
JP52032674A 1977-03-24 1977-03-24 How to recycle semiconductor devices Expired JPS5917849B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52032674A JPS5917849B2 (en) 1977-03-24 1977-03-24 How to recycle semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52032674A JPS5917849B2 (en) 1977-03-24 1977-03-24 How to recycle semiconductor devices

Publications (2)

Publication Number Publication Date
JPS53117969A JPS53117969A (en) 1978-10-14
JPS5917849B2 true JPS5917849B2 (en) 1984-04-24

Family

ID=12365410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52032674A Expired JPS5917849B2 (en) 1977-03-24 1977-03-24 How to recycle semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5917849B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567643A (en) * 1983-10-24 1986-02-04 Sintra-Alcatel Method of replacing an electronic component connected to conducting tracks on a support substrate
US4954453A (en) * 1989-02-24 1990-09-04 At&T Bell Laboratories Method of producing an article comprising a multichip assembly

Also Published As

Publication number Publication date
JPS53117969A (en) 1978-10-14

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