JPS59177936A - Formation of pattern - Google Patents

Abstract

PURPOSE:To obtain a simple and moreover rapid pattern formation method by a method wherein monomer gas is introduced in a vacuum reaction chamber, and an electron beam is scanningly projected on a substrate to form a polymerized pattern on the substrate according to monomer gas. CONSTITUTION:A reaction vessel set with a processing substrate is decompressed, and after monomer gas is introduced therein, an electron beam is scanned and projected to the prescribed position on the substrate to form a polymerized pattern on the substrate according to monomer gas. Moreover, when the substrate is cooled to the room temperature or less at this time, because the growth speed of height of the pattern is increased, the pattern can be formed in a more short time. Any kind of monomer gas can be used when the monomer gas is stable in vacuum pressure, and moreover when it becomes to a gaseous body and has sufficient reactivity to be polymerized according to the electron beam, and styrene, butadiene, divinylbenzene, methyl methacrylate, tetrafluoroethylene, chlorstylene, etc. can be used, for example.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a pattern forming method, and more particularly to a pattern forming method using an electron beam polymerization method.

(2) Conventional technology and problems Pattern formation in conventional lamination lithography technology involves polymerizing a polymer from a monomer, purifying it, dissolving it in an appropriate solvent, filtering it, and then forming a thin film of the polymer on a substrate using a sulfur coating method. However, after prebaking this, it is irradiated with radiation such as electron beams, X-rays, and ultraviolet rays, and then developed. This method is complicated and requires multiple steps to form a pattern, so it is difficult to achieve desired results.
This method has problems such as requiring a long time to obtain a turn. Recently, attempts have been made to use plasma polymerization or photopolymerization to form a polymer thin film directly on a substrate from a monomer.

However, even with this method, a pattern cannot be formed unless exposure to radiation and development are performed.

(3) Purpose of the Invention The purpose of the present invention is to provide a new pattern forming method that is extremely simple and rapid. For this purpose, a monomer gas is introduced into a reduced pressure reaction chamber in which a substrate to be processed on which a pattern is to be formed is installed, and then an electron beam is scanned and irradiated onto the substrate to form a pattern from the monomer gas. The present invention provides a patented method for forming a pattern characterized by forming a polymerized pattern.

That is, as a result of intensive studies on various phosphorography techniques and polymerization methods, the present invention applies electron aIJ lithography techniques and a thin film formation method using electron beam induced polymerization.

It was completed. That is, the present invention reduces the pressure in a reaction vessel in which a substrate to be processed is installed, introduces a monomer gas into the reaction vessel, and then scans and irradiates an electron beam onto a predetermined position on the substrate, thereby polymerizing the monomer gas onto the substrate. It forms a pattern.

Furthermore, if the substrate is cooled below room temperature at this time, the growth rate of the pattern height increases, making it possible to form the pattern in an even shorter time. The purpose of cooling in this manner is to make it easier for the monomer gas to be adsorbed onto the substrate.

Any monomer gas that can be used in the present invention can be used as long as it is stable under reduced pressure and has sufficient reactivity to be polymerized by a gaseous stain beam. For example, styrene, butadiene, divinylbenzene, methyl methacrylate, tetrafluoroethylene, chlorstyrene, etc! Conventional monomers and also polymers that can be turned into gases such as polydimethyldiphenylsiloxane, polydimethylsiloxane, etc. can be used.

The apparatus used in the experiments of the present invention can be the same as the apparatus used in the conventional electron beam lithography technique. During experiments of the present invention, the pressure of the reactor is reduced to at least I Torr or less.

After the pressure is reduced, a monomer gas to be polymerized is introduced, and a predetermined pattern is drawn using an electron beam. At this time, a desired pattern is formed by using an electron beam deflection circuit and a blanking electrode in the operation system so that the electron beam can be irradiated only on predetermined positions on the substrate. Thereafter, the substrate to be processed is etched using the obtained No. 4 mask as a mask, and a metal is then vapor-deposited.

(4) Examples of the invention The present invention will be further explained below with reference to Examples.

Example 1 A Si substrate with a diameter of 3 inches was placed in a reaction vessel, and the inside of the vessel was evacuated until I X ], O', Torr or less. Next, styrene was introduced until the inside of the container reached lx104 Torr, and when an electron beam with an acceleration voltage of 15 KV was scanned at a predetermined position on the substrate, a pattern of polymer, which was thought to be polystyrene, was formed on the substrate. Note that the sample current at this time was 0.4 m and A. The minimum width of the pattern that could be formed was 2.5 μm, and the height was 1700×.

Example 2 A pattern was formed in the same manner as in Example 1, except that the 81 substrate was cooled to -70° C. by circulating a coolant in the substrate holding table. The minimum width of the pattern that could be formed was 2.5 μm, but the height was 4500×.

Example 3 After installing the substrate in the same manner as in Example 1, the inside of the container was evacuated, and divinylpenzea was introduced into the container until the pressure reached 2×10 Torr. The substrate was cooled to -70°C as in Example 2. Next, when a predetermined position on the substrate was scanned and irradiated with an electron beam with an accelerating voltage of 15 KV, polymer grooves were formed. The sample current was 0.2 mA.

The minimum width of the formed pattern is 2 ttm and the height is 630 mm.
It was 0X.

(5) Effects of the Invention As explained above, the present invention is configured to form a pattern using the electron beam polymerization method, so the formed mother turns have no pinholes.

Therefore, it is extremely reliable when wet or dry etching the substrate using the pattern as a mask, compared to the case where a thin film is formed by polymerization using a normal polymerization method and a thin film is formed using a sulfur coating method, and then a pattern is formed using radiation. It has high properties and can improve yield. Furthermore, it is extremely efficient and economical because a glossy turn can be obtained in one step without performing coating, exposure, and development steps as in conventional methods.

Claims (1)

[Claims] 1. A monomer gas is introduced into a reduced pressure reaction chamber in which a substrate to be processed in which a turn is to be formed is installed, and then an electron beam is scanned and irradiated onto the substrate to cause a large amount of the monomer gas to be formed on the substrate. A pattern forming method comprising forming a polymerized pattern. 2. A pattern forming method in which the substrate is cooled to room temperature or below.