JPS59175020A - Thin metallic film type magnetic recording medium - Google Patents
Thin metallic film type magnetic recording mediumInfo
- Publication number
- JPS59175020A JPS59175020A JP58049850A JP4985083A JPS59175020A JP S59175020 A JPS59175020 A JP S59175020A JP 58049850 A JP58049850 A JP 58049850A JP 4985083 A JP4985083 A JP 4985083A JP S59175020 A JPS59175020 A JP S59175020A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- recording medium
- magnetic recording
- film
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000005415 magnetization Effects 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 abstract description 7
- 238000001704 evaporation Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 230000008020 evaporation Effects 0.000 abstract description 5
- 229920000307 polymer substrate Polymers 0.000 abstract description 5
- 239000000696 magnetic material Substances 0.000 abstract description 2
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- 210000003128 head Anatomy 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- 229910020676 Co—N Inorganic materials 0.000 description 1
- 229910020516 Co—V Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 210000000744 eyelid Anatomy 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- FPVKHBSQESCIEP-JQCXWYLXSA-N pentostatin Chemical compound C1[C@H](O)[C@@H](CO)O[C@H]1N1C(N=CNC[C@H]2O)=C2N=C1 FPVKHBSQESCIEP-JQCXWYLXSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
木兄り1は録音、録画、情報処理等に於いて、短波長記
録特性に優れた磁気記録媒体として利用される金属薄膜
型磁気記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application Kinori 1 relates to a metal thin film type magnetic recording medium used as a magnetic recording medium having excellent short wavelength recording characteristics in sound recording, video recording, information processing, etc.
従来例の構成とその問題点
従来、磁気記録媒体としてtよ、高分子基板や、アルミ
ニウム基板上にCOをドープしたγ−FezOsやCr
(h等の酸化物磁性粉末、又pま強磁性合金粉末等の粉
末状磁性材料をポリウレタン樹脂等の有機バインタ中に
分散させて、塗布乾燥させたいわゆる塗布型のものが広
く天川に供されている。Conventional configurations and their problems Traditionally, magnetic recording media have been made of CO-doped γ-FezOs or Cr on a polymer substrate or an aluminum substrate.
(So-called coated type materials, in which powdered magnetic materials such as oxide magnetic powder such as H, or ferromagnetic alloy powder such as P, are dispersed in an organic binder such as polyurethane resin, and then applied and dried are widely used in Amagawa. ing.
しかし近年の記録密度要望は強く、従来の塗布型を用い
たシステムでの記録密度の向丘には技術的限界がみえは
じめ、新しい媒体を用いたシステムの検耐が開始されて
いる。However, in recent years there has been a strong demand for recording density, and the technical limits of recording density in systems using conventional coated media are beginning to be seen, and testing of systems using new media has begun.
新しい媒体は、短波長記録特性の優秀さが古くから注目
されていた強磁性金属薄膜を磁気記録層とする、いわゆ
る金属薄膜型磁気記録媒体で、短波長記録特性の再m駆
と共に、実用化に向けての努力が続けられており、現状
ではCo−N1−()系の斜め蒸着膜、Co−Cr系の
スパッタ膜の研究が最も進んでいる。前者tま反磁場の
ために面内に磁化されて、いわゆる面内磁化膜と呼ばれ
ており、C0−Cr系のスパッタ膜は、製造条件により
C軸(主軸)が基板面にほぼ垂直にでき、反磁場による
損失か少いので、より高密度記録が可能であると考えら
れており、いわゆる垂直磁化膜と呼ばれている。The new medium is a so-called metal thin film magnetic recording medium, which uses a ferromagnetic metal thin film as a magnetic recording layer, which has long been noted for its excellent short wavelength recording characteristics, and has been put into practical use as short wavelength recording characteristics have been renewed. Efforts are continuing toward this, and at present, the most advanced research is on Co-N1-()-based obliquely deposited films and Co-Cr-based sputtered films. The former is magnetized in-plane due to the demagnetizing field and is called a so-called in-plane magnetized film.In CO-Cr sputtered films, the C axis (principal axis) is almost perpendicular to the substrate surface due to manufacturing conditions. It is thought that higher density recording is possible because there is less loss due to demagnetizing fields, and it is called a perpendicular magnetization film.
しかし、これらの媒体を実用面から最も優れた狭fセツ
プ、例えばfヤツプ長025μmのフェライトヘッド、
センタストヘッド等のリングヘッドによる記卸・丙午特
性を詳細に検討すると、必ずしも、満足のいく外生出力
が得られていないのが実状であって、従来の塗布をと比
較すると、圧倒的に短波長出力での優位性はあるが、金
属薄膜型の特長を実用的なシステムで最大限に生かすに
は、現在知られている媒体に代る新規な媒体構成が求め
られるに至っている。However, from a practical point of view, these media have the best narrow f-sep, such as a ferrite head with an f-jump length of 025 μm.
When we examine in detail the memorization and heating characteristics of ring heads such as the Centast head, we find that the actual situation is that satisfactory external output is not necessarily obtained, and when compared with conventional coating, it is overwhelmingly Although it has an advantage in short wavelength output, in order to take full advantage of the characteristics of the metal thin film type in a practical system, a new medium configuration is required to replace the currently known media.
発明の目的
本発明はリング型狭fセッヴヘッドによる記録再生過程
に於ける効率の良い金属薄膜型磁気記録媒体を提供する
ことを目的とする。OBJECTS OF THE INVENTION An object of the present invention is to provide a metal thin film type magnetic recording medium that is efficient in the recording and reproducing process using a ring type narrow f-Sev head.
発明の構成
零発す]の金属薄膜型磁気記録媒体は、基板fK強磁性
層を設け、この強磁性層の構成結晶粒子の主軸が基板面
に対して40°以l:65°以下に傾斜し、飽和磁化を
MSとすると異方性磁界HKが4πMSより大なる条件
を満足することを特徴とする。The metal thin film magnetic recording medium according to the invention has a ferromagnetic layer on a substrate fK, and the main axis of the constituent crystal grains of the ferromagnetic layer is inclined at an angle of 40° or more to 65° or less with respect to the substrate surface. , the anisotropic magnetic field HK satisfies the condition that the anisotropic magnetic field HK is greater than 4πMS, where MS is the saturation magnetization.
本発明に用いられる基板は、ポリエチレンテレフタレー
ト、ポリエチレンナフタレート、ボリア三ド、ポリイミ
ド、ポリカーボネート等あるいは、これら高分子基板E
に、非磁性下地層、軟磁性下地層を配したもののいずれ
かである。なお、非磁性下地層、軟磁性層の製法につい
て特別の限定はなく、公知の電子ビーム蒸着法、スパッ
タリング法、イオンブレーティング法、イオンビーム蒸
着法湿式めっき法等が適宜用いられる。The substrate used in the present invention is made of polyethylene terephthalate, polyethylene naphthalate, triboria, polyimide, polycarbonate, etc., or these polymer substrates E
and a non-magnetic underlayer or a soft magnetic underlayer. Note that there are no particular limitations on the manufacturing method of the nonmagnetic underlayer and the soft magnetic layer, and known electron beam evaporation methods, sputtering methods, ion blating methods, ion beam evaporation methods, wet plating methods, etc. can be used as appropriate.
本発明に用いられる強磁性材料はCo−Cr、Co−N
i Cr ’i−’cO−Mo 、 Co −V 、
Co−W等であるl#J記した材料のCr 、、Mo
、V、W等の含有量を選んで、MSを下げると共に特定
の角度で斜方蒸着することで、本発明の構成を得ること
ができるが、°保磁力については製造条件を吟味しない
と大きい保磁力は容易に得ることは出来ない。一番確実
な方法は、回転支持体としてエンドレスベルトを用いて
、入射角をほぼ一定になる条件で、イオンブレーテイン
ジするか、基板温度をEげる方法か、またはこの両者を
組み合わせることで実現できる。The ferromagnetic materials used in the present invention are Co-Cr, Co-N
iCr'i-'cO-Mo, Co-V,
Cr, Mo
The structure of the present invention can be obtained by selecting the contents of , V, W, etc. to lower the MS and performing oblique deposition at a specific angle, but the coercive force is large unless the manufacturing conditions are carefully examined. Coercive force cannot be easily obtained. The most reliable method is to use an endless belt as a rotating support and perform ion bombardment under conditions where the incident angle is almost constant, or to raise the substrate temperature, or to use a combination of both. realizable.
実施例の説明
以下、本発明の一実施例を図面に基づいて説明する。第
1図は完成した磁気記鎌媒体の断面構成を示し、高分子
基板等の基板(I)上に強磁性薄膜層(11)を配した
媒体である。図に示したように、強磁性薄膜層但)を構
成する結晶粒子のC軸[相]が基板面となす角度をθと
すると、θが40°以上65°以下に調(されると共に
、この薄膜層(2)を構成する材料の飽和磁化をMsと
し、異方性磁界の大きさをHKとすると、HKが4πM
Sより大なる条件で構成されている。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows the cross-sectional structure of the completed magnetic recording medium, which is a medium in which a ferromagnetic thin film layer (11) is disposed on a substrate (I) such as a polymer substrate. As shown in the figure, if θ is the angle that the C axis [phase] of the crystal grains constituting the ferromagnetic thin film layer makes with the substrate surface, θ is adjusted to 40° or more and 65° or less, and If the saturation magnetization of the material constituting this thin film layer (2) is Ms, and the magnitude of the anisotropic magnetic field is HK, then HK is 4πM
It is made up of conditions that are greater than S.
第2図は第1図の構成の媒体を得るために用いた巻取り
蒸着装置の要部構成−を示す。高分子基板(I)は回転
支持体に沿って移動する際、蒸着を受けるよう構成され
ており、ここで回転支持体は回転冷却0−ラ(2) (
3)と金属製エンドレスベルト(4)とで構成され、エ
ンドレスベルト(4)は矢印で示す方向に一定速度で回
転駆動されている。また、エンドレスベルト(4)の傾
きは、調節可能の構成をとることもできるし、マスク(
5)の位置調整によるか、いずれかで蒸気流の入射角を
調整し、C軸の角度を好ましい条件に選ぶように構成さ
れる。なお基板(I)は送り出し軸(6)よりエンドレ
スベルト(4)に沿って巻取り軸(7)へ移動するよう
配設されている。FIG. 2 shows the main structure of a winding vapor deposition apparatus used to obtain the medium having the structure shown in FIG. The polymeric substrate (I) is configured to undergo deposition as it moves along a rotating support, where the rotating support is rotatably cooled (2) (
3) and a metal endless belt (4), and the endless belt (4) is rotated at a constant speed in the direction shown by the arrow. In addition, the inclination of the endless belt (4) can be adjusted, and the inclination of the endless belt (4) can be adjusted.
The angle of the C-axis is selected to a preferable condition by adjusting the angle of incidence of the vapor flow either by adjusting the position in step 5) or by adjusting the angle of incidence of the vapor flow. Note that the substrate (I) is arranged to move from the feed shaft (6) to the winding shaft (7) along the endless belt (4).
基板(1)と対向して、前記蒸気流を発生する合金蒸発
源(ト)が配役され、両者の中間に、イオンブレーテイ
ンジのだめの高周波コイル(8)が配設されている。合
金蒸発源α)の蒸発源容器(9)#ま2槽式で、A元素
叫とB元素αυがチャージされており、A元素GOとB
元素alをそれぞれ電子銃0乃備からのじ−ムで各別に
衝撃加熱できるよう構成されている。An alloy evaporation source (g) that generates the vapor flow is arranged opposite to the substrate (1), and a high frequency coil (8) for ion bombardment is arranged between the two. The evaporation source container (9) for the alloy evaporation source α) is a two-tank type, charged with A element and B element αυ, and A element GO and B
The structure is such that each element Al can be individually impact-heated using an electron gun.
なお、A元素四とB元素CIυけ必ずしも単一元素でな
くても蒸気圧の近い合金であればよく、別個の電子銃に
よらずに、1ケの電子銃を走査方法により、h7c素、
B元素の蒸発量を調節しても良いのは勿論である。Note that the A element 4 and the B element CIυ are not necessarily single elements, but may be alloys with similar vapor pressures.
Of course, the amount of evaporation of element B may be adjusted.
これらの系は、真空槽a膏の内部に配設されており、真
空!(14の内部は排気系Q葎により排気されている。These systems are installed inside the vacuum tank a-glue, and the vacuum! (The inside of 14 is exhausted by the exhaust system Q.
alま高周波電源、σのは絶縁性導入端子である。Al is a high frequency power supply, and σ is an insulating introduction terminal.
実施例
第2凶の装置でへ元素αQをCrとし、B元素alをC
oとし、基板(I)としてのポリエチレンテレフタレー
ト110R11上に高周波イオンプレーティシタによリ
02μmのCo−(: r膜を得た。高周波゛屯カは6
50 W投入し、蒸着4 度1icolsi 800
X/sec 、 Crt>i 240 X/secとし
た。入り・tA条件を変えて、E記条件で約8000ガ
ウスの4膜Msの値ACo−(r映を得、基板(I)を
夫々8順幅に裁断して磁気テープとし、市販のビデオチ
ープレクー夕を改造して4t)ツブ長02μmのフェラ
イトヘッドで記録・再生した場合の出方を、実用レベル
に最も近いCo−N1()系の面内磁化膜をOdBとし
て第3図に示した。用いたCo−Ni−0膜は、厚み0
.13μm、Hc=1000 [OeJ 、4膜Ms=
8700りjウスである。Example 2 In the second worst device, the element αQ is set to Cr, and the B element al is set to C.
A Co-(:r) film of 02 μm was obtained on polyethylene terephthalate 110R11 as a substrate (I) using a high frequency ion plater.
50 W input, vapor deposition 4 degrees 1icolsi 800
X/sec, Crt>i 240 X/sec. By changing the input and tA conditions, the value ACo-(r) of the 4-film Ms of about 8000 Gauss was obtained under the E conditions, and the substrates (I) were each cut into 8 regular widths to make magnetic tape. Figure 3 shows the results when the receiver is modified and recording/reproduction is performed using a ferrite head with a ferrite head with a tongue length of 02 μm, with the in-plane magnetization film of the Co-N1 ( ) system closest to the practical level as OdB. Ta. The Co-Ni-0 film used had a thickness of 0.
.. 13μm, Hc=1000 [OeJ, 4 films Ms=
It is 8,700 ri.
スペース損失を補正するのは短波長になるほど精度よ〈
実施できないので、全て同一基板を用い、表向粗さtま
フィルムの製膜精度レベルで合わせた。The shorter the wavelength, the more accurate it is to correct space loss.
Since this was not possible, the same substrate was used for all the tests, and the surface roughness was adjusted to the same level of film forming accuracy as t.
参考に垂直磁化膜についても、本発明品と同一基板で製
作し、その出方も示した。For reference, a perpendicularly magnetized film was also manufactured using the same substrate as the product of the present invention, and its appearance was also shown.
尚、Hxtj面内方向のM−H曲線より求めたが、50
00 g)eJから58001e]の範囲にあった。In addition, it was obtained from the M-H curve in the in-plane direction of Hxtj, but 50
00 g)eJ to 58001e].
また、Hc&iC軸方向の値で10oo [OeJから
1050めeJの値であった。Further, the value in the Hc&iC axis direction was 10oo [1050th eJ from OeJ.
第8図より、リングヘッドによる高出方域は40°から
653範囲にあり、遷移領域が、30°から40゜、6
5°から75°の範囲にあることがわかる。このことは
、リングヘッドの作る磁界分布からくるものと考えられ
、磁界傾斜が記録効率を最大になるようマツチングする
条件は、面内磁化膜でもないし、垂直磁化膜でもないこ
とを示している。この傾向は、しンタストヘ゛シト、ア
モルファスヘッドでも同じであった。From Figure 8, the high output area due to the ring head is in the range from 40° to 653°, and the transition area is from 30° to 40°, 65°.
It can be seen that the angle ranges from 5° to 75°. This is thought to result from the magnetic field distribution generated by the ring head, and indicates that the conditions for matching the magnetic field gradient to maximize recording efficiency are neither in-plane magnetized films nor perpendicularly magnetized films. This tendency was the same for the blank head and the amorphous head.
実施例
ボリア三ド基板(8μm)を、あらかじめArイオン2
+
ボンバード処理し、(Arイオン濃度′lOμ〜’am
、ArイオンエネL f−IKeV )、へ元素αQ
をCr、8元素Ql)をCo 80%、Ni 20%の
合金とし、Crは140.A/see。Example: A tri-borium substrate (8 μm) was pre-treated with Ar ions 2
+ Bombarded, (Ar ion concentration 'lOμ~'am
, Ar ion energy L f-IKeV ), element αQ
is Cr, 8 elements Ql) is an alloy of 80% Co and 20% Ni, and Cr is 140%. A/see.
0
Nitま400A/secで028pm蒸発した。、高
周波電力800Wで高周波イオンプレーティ、7りしf
C6上記条件で入射角を変えて、θ=20?θ=30?
θ=38°、θ=36ζθ=38ζθ=40°、θ=4
2ζθ=45−σ=50ζθ=60ζθ=63;θ=6
5ζθ=665ζθ=68°、θ=70°の15水準の
Co→J i −(r膜を製造した。4膜Msはほぼa
eoo 1ウス、HKけ約6000 ie」でHcけ1
150[OeJから121010eJであった。It was evaporated at 0.028 pm at 400 A/sec. , high frequency ion plaity with high frequency power 800W, 7rishi f
C6 Changing the incident angle under the above conditions, θ=20? θ=30?
θ=38°, θ=36ζθ=38ζθ=40°, θ=4
2ζθ=45-σ=50ζθ=60ζθ=63;θ=6
5 ζ θ = 665 ζ θ = 68°, θ = 70°, 15 levels of Co→J i −(r films were manufactured. 4 films Ms were approximately a
eoo 1us, HKke approx. 6000 ie” and Hcke 1
It was 121010eJ from 150[OeJ.
比較例として、Co−Ni−0暎の面内磁化膜(4膜M
s=890of5ウス、Hc=1200 [Oel )
、CoCr垂直磁化II’−! (4yrMs=890
0)1ウス、 l1c=12500e] )も製造し、
夫々g tnm幅のテープとし、試瞼機で相対比較した
。ヘッドは、甲セップ長0.18μmのアモルファスヘ
ッドとフェライトヘッドを用い、記録波長(182μm
を対象にCo−N1−()膜をOdBとして相対比較し
た。その結果、本発明による媒体は+6df3近い高出
方であった。遷移領域は、第3閃よセもより顕著に現出
した。この場合も+6dB近い高出力域はθが40゜か
ら65°の範囲であった。As a comparative example, a Co-Ni-0 in-plane magnetized film (4 films M
s=890of5us, Hc=1200 [Oel)
, CoCr perpendicular magnetization II'-! (4yrMs=890
0) 1us, l1c=12500e] ) was also produced,
Each tape had a width of gtnm and was compared using an eyelid tester. The head uses an amorphous head with an instep length of 0.18 μm and a ferrite head, and a recording wavelength (182 μm).
A relative comparison was made using the Co-N1-() film as OdB. As a result, the medium according to the present invention had a high output of nearly +6df3. The transition region also appeared more prominently in the third flash. In this case as well, the high output range close to +6 dB was in the range of θ from 40° to 65°.
尚、垂直磁化膜の出力tまこの場合+2dBであったっ
上記実施例では強磁性薄膜層Φ)のしに何も設けなかっ
たが、媒体さしての耐久性、#候性が、強磁性層のみで
不′満足な場合、表面に有機N膜を配するなどについて
も適宜実施できるものであるのけ勿論である。Note that the output of the perpendicularly magnetized film was +2 dB in this case.In the above embodiment, nothing was provided in addition to the ferromagnetic thin film layer Φ), but the durability and weatherability of the medium were higher than that of the ferromagnetic layer alone. If this is not satisfactory, it is of course possible to arrange an organic N film on the surface as appropriate.
また1記実施例では基板(I)の片側にのみ強磁性薄膜
層Φ)を配しだが、これは基板の両面に同一の強磁性層
を配したもの、又は一方の面は完全な垂直磁化膜、或い
は、面内磁化膜、等の薄膜磁性層を配したものか、塗布
法により得られる塗布磁性層を配して、両側より同時に
又は別個にアクセス可能にすることができる。In addition, in Example 1, the ferromagnetic thin film layer Φ) is arranged only on one side of the substrate (I), but this is different from the case where the same ferromagnetic layer is arranged on both sides of the substrate, or where one side is completely perpendicularly magnetized. It is possible to arrange a thin film magnetic layer such as a film or an in-plane magnetized film, or a coated magnetic layer obtained by a coating method so that it can be accessed from both sides simultaneously or separately.
発明の詳細
な説明のように本発明の金属薄膜型磁気記録媒体による
と、高分子基板上に強磁性層を設け、この強磁性層の構
成結晶粒子の主軸が基板面に対して40°以ヒ65°以
下に傾斜し、飽和磁化をMSとすると異方性磁界HKが
4膜Msより大なる条件を満足するよう構成したため、
短波長での高出力が得られ、しかも、従来の延長線上の
技術で、インタフェイスが確立し易い条件下で、垂直磁
化膜以上の高出力を実現できるもので、超小型VTRを
はじめ、情報産業での機器の小型化を飛躍的におしすす
めることができるものである。As described in the detailed description of the invention, according to the metal thin film magnetic recording medium of the present invention, a ferromagnetic layer is provided on a polymer substrate, and the main axis of the crystal grains constituting the ferromagnetic layer is at an angle of 40° or more with respect to the substrate surface. Since the configuration is such that the anisotropic magnetic field HK is greater than 4 films Ms, if the saturation magnetization is MS,
It can obtain high output at short wavelengths, and can also achieve higher output than that of perpendicular magnetization films under conditions where it is easy to establish an interface using technology that is an extension of conventional technology. This can dramatically promote the miniaturization of equipment in industry.
%1図は本発明の磁気記録媒体の一実施例の断面図、第
2図tま第1図の磁気記録媒体を得るのに用いた巻取蒸
着装置の要部構成図、88図は、本発明の磁気記録媒体
の短波長出力とθの関係図である。
(I)・・・基板、11)・・・強磁性薄膜層、10・
・・強磁性薄膜層構成結晶粒子の主軸、(4)・・エン
ドレスベルト、(5)・・・マスク、(6)・・送り出
し軸、(7)・・・巻取り軸、(9)・・・蒸着源容器
、<1(1・・・A元素、αυ・・・B元素代理人
祿 木 義 弘
第1図
第2図
第3図
匈
1こ
θ〔劃Figure 1 is a cross-sectional view of one embodiment of the magnetic recording medium of the present invention, Figure 2 is a main part configuration diagram of the winding vapor deposition apparatus used to obtain the magnetic recording medium of Figure 1, and Figure 88 is a sectional view of an embodiment of the magnetic recording medium of the invention. FIG. 2 is a diagram showing the relationship between short wavelength output and θ of the magnetic recording medium of the present invention. (I)...Substrate, 11)...Ferromagnetic thin film layer, 10.
...main axis of crystal grains constituting the ferromagnetic thin film layer, (4)...endless belt, (5)...mask, (6)...feeding shaft, (7)...winding shaft, (9)... ...Vapor deposition source container, <1 (1...A element, αυ...B element agent
Yoshihiro Yoshiki Figure 1 Figure 2 Figure 3
Claims (1)
粒子の主軸が基板面に対して400以ヒ65゜以rに傾
斜し、飽和磁化をMSとすると異方性磁界HKが4πM
sより大なる条件を満足する金属薄膜型磁気記録媒体。l. A ferromagnetic layer is provided on the substrate, and the main axis of the crystal grains constituting the ferromagnetic layer is inclined at an angle of 400° to 65° relative to the substrate surface, and when the saturation magnetization is MS, the anisotropic magnetic field HK is 4πM
A metal thin film magnetic recording medium that satisfies the condition greater than s.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58049850A JPS59175020A (en) | 1983-03-24 | 1983-03-24 | Thin metallic film type magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58049850A JPS59175020A (en) | 1983-03-24 | 1983-03-24 | Thin metallic film type magnetic recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59175020A true JPS59175020A (en) | 1984-10-03 |
JPH054724B2 JPH054724B2 (en) | 1993-01-20 |
Family
ID=12842530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58049850A Granted JPS59175020A (en) | 1983-03-24 | 1983-03-24 | Thin metallic film type magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59175020A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591105A (en) * | 1978-12-04 | 1980-07-10 | Matsushita Electric Ind Co Ltd | Magnetic thin film |
-
1983
- 1983-03-24 JP JP58049850A patent/JPS59175020A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591105A (en) * | 1978-12-04 | 1980-07-10 | Matsushita Electric Ind Co Ltd | Magnetic thin film |
Also Published As
Publication number | Publication date |
---|---|
JPH054724B2 (en) | 1993-01-20 |
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