JPS59173231A - Formation of compound ultra-conductive substance - Google Patents

Abstract

PURPOSE:To easily form an ultra-conductive substance comprising a two-element compound, by subjecting an element such as V, Nb, Ti, Hf or Zr, an element such as Si, Ge, Sn, Al or Ga and a compound containing O, N or S to solid phase reaction. CONSTITUTION:An element A such as V, Nb, Ti, Hf or Zr, an element B such as Si, Ge, Sn, Al or Ga and a compound BCx containing a highly reactive element C such as O, N or S are subjected to solid phase reaction to form an ultra- conductive substance AyB (wherein V3Si formed by using SiO2 as BCx is excepted) comprising a two-element compound. In this case, the element A is reacted with C in the compound BCx and, at the same time, decomposes BCx to form AyB and B is not supplied except for the decomposition of BCx and, therefore, reaction advances in such a state that the supply amount of B is limited and (y) takes a value of 1 or more, in general, 3.

Description

[Detailed description of the invention] 4. The invention relates to a method for forming a compound superconductor.

This kind of super amazing body is indispensable, for example, the comical C2 of Ayari Shiko's Josephson 5g child for super high-performance computers.

In other words, the practical application of the Josephson element (= because it requires a cylinder of conduction field iM K "c" is presently the highest W Fm '916% field 7 # A Ni'
I'( can be obtained at 22.5K with NbgGe.

In general, compound superconductors have a higher T than superconducting metals alone. have.

Therefore, a binary compound superconductor with a more disordered Tc (
To form Nb x AI , Nb i (je, etc.) (-each 4″1H method has been tried.

However, these compounds are often difficult to form due to crystal lattice instability.

In other words, when A, B, and C are the element symbols, two-element compound rm conductors are often represented by the chemical formulas A and H, and conventionally, 4 is used to form AaB.
By reacting the binary sum A and the element g E, the force ・, A, B
is usually an unstable phase, so for example, AB2゜A which is a stable phase
B, A, B, etc. are formed, and the desired A:g+
Doctor! The formation of the natural A and B phases was non-structural.

However, a method in which V and Si are obtained by heat-treating slightly (=8 iOz) after steaming b-■ to obtain an in-phase reaction (=+tit) has been investigated.

The non-inventive method is to convert the above-mentioned non-t, 15-gou (1 marriage, 1 production spindle) A3B 2-fu C Tohiai bamboo superconductor to S1 (V using J2, Si (- not limited to It is an object of the present invention to provide a method for the formation of a compound I superconductor that can be easily obtained by an in-phase reaction between a set of complexes and an acclimate, hydrated or tvfted Ij, +). be.

The following is uninvented: Element A, silicon german, aluminum, gallium, element A, silicon german, aluminum, gallium, element B and r; *system,
Contains element C with strong reactivity of Huang Pei (e8
It is characterized by forming solid phase centration (therefore two-element compound phase conduction waves A and B (excluding V3Si using SiO□ as BOX) with @BCx).

In these embodiments, a two-element compound superconductor having the combination shown in FIG. 1 can be obtained.

Since the present invention is a method as described above, AyB is formed as a result of decomposing BCx at the same time as element A reacts with element C in compound 13Cx.

ko; h-2yotsu cAllz, AB, 4B toyz la f cmTWi no A, B force s is formed.

Moreover, in this case (2), since B is not supplied unless BCx is decomposed, the reaction proceeds in a situation where the supply of B is limited, and as a result, y takes a value of 1 or more.
If there is a lot of glue, it will be 8 pieces and 3 pieces.

Therefore, 1-A8B is easily formed.

Furthermore, when BCx is used as a substrate (2), A and B with good adhesive properties are formed as a result of the reaction with the root of the word.

Furthermore, (2) using single crystal BCx as the substrate (
Secondly, the formed Aa and B can be oriented.

Example 1 Element A...Nb Reaction formula % Formula %) (Oxide film (SiO)
00 OA sputter fish cake, then vacuum [5X 10
A ti'ii phase reaction was carried out by total heat treatment at 900° C. to 1200° C. for 2 hours at a temperature below Torr.

N1) The X-ray diffraction pattern of the Nuvanta film is shown in Figure 21 (-).

As shown by the diagonal lines in the figure, clear (2N1) 6Sl loss can be seen in the 1100 C;-Pa treatment brittleness.

Moreover, the superelectric critical vorticity of this sample was 13°K.

Example 2 Element B...A' V+Al2O, → VaAl+V
Ox element C...0 Result V 300OA on alumina (AI 20m) ceramic substrate
The X-ray diffraction pattern of the 11iIl phase was reacted by steaming the spatsuta, and then vacuum heat treatment at 600°C to 900°C, 2 hours, 1t1] at a temperature of less than 10'↓'orr. 1; Show 2.

In the same figure, as indicated by diagonal lines (at a heat treatment temperature of -1700° C. to 900° C., a peak clearly showing 42 V and AI is clearly visible.

In addition, the superconductive critical arsenicity of these samples was from 5.2°K to 5.4°.

Example 3 Element 'B''''' Nb +511 (J2-
→N1) S (to 1+'box element C...0 Result Sen'ei crow board ζ2Sn is lent by Gukusuke, and it is heated to 1χ
, unify the 5n02 film, expose it, and then (
-200OA NbY sputtering, the temporary 1,000
Air heat treatment at 0°C for 2 hours (Nb subjected to solid phase reaction)
The X-ray diffraction pattern of the sputtered film is shown in FIG.

As shown in the same line, it is clear that there is a peak indicating the Sn (+'ll-).

Furthermore, the critical temperature of this sample was 18°K.

Example 4 Element B""' SIV 15iBJ+, -+ V
3Si +vl'Jx Nine elements C...N Result Silicon wafer base & Figure 5 shows the X iJ recirculation pattern of the sputtered film subjected to field heat treatment (2) and in-phase reaction.

In the same figure, the line 1 and 1 indicate the temperature difference (-1800°C 1 h
After processing, a heak force surface clearly showing V,8i can be obtained.

Further, the superconductive critical wetting of this sample was 14°.

[Brief explanation of drawings]

Figure 1 shows 11414 binary cargo superconductors.
Mukuto! , Fig. 2 is an X-ray diffraction pattern diagram of Si formation, Fig. 3b is an X-ray diffraction pattern diagram of Si formation (It4 ViAI), and the fourth factor is an X-ray diffraction pattern diagram of NbaSn formation.・Figure 5 Ha Vasi3't Narino X? It is a diffraction pattern diagram. Published on February 28, 1981. ri4 〕t/-Koji fuge phase

Claims (1)

[Claims] Elements such as vanadium, niobium, titanium, hafnium, and zirconium, as well as silicon and germanium. Tin, Al? Element gB such as Ni, Gallium, etc. and compound BC, + containing highly reactive element C such as violet, nitrogen, sulfur, etc.
The two-element compound superconductor AyB (
A method for forming a compound superconductor in which the formation of V (excluding V, 8i) using Si02 as BCx is the 4th characteristic.