JPS59171054A - Magneto-optical storage element - Google Patents

Magneto-optical storage element

Info

Publication number
JPS59171054A
JPS59171054A JP4548783A JP4548783A JPS59171054A JP S59171054 A JPS59171054 A JP S59171054A JP 4548783 A JP4548783 A JP 4548783A JP 4548783 A JP4548783 A JP 4548783A JP S59171054 A JPS59171054 A JP S59171054A
Authority
JP
Japan
Prior art keywords
film
magneto
rare earth
recording
storage element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4548783A
Other languages
Japanese (ja)
Other versions
JPH039544B2 (en
Inventor
Kenji Oota
賢司 太田
Junji Hirokane
順司 広兼
Hiroyuki Katayama
博之 片山
Akira Takahashi
明 高橋
Hideyoshi Yamaoka
山岡　秀嘉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4548783A priority Critical patent/JPS59171054A/en
Priority to DE3382791T priority patent/DE3382791T2/en
Priority to EP83302419A priority patent/EP0111988B2/en
Priority to DE8888104160T priority patent/DE3382672T2/en
Priority to EP92110340A priority patent/EP0509555B1/en
Priority to DE8888104159T priority patent/DE3382671T2/en
Priority to EP88104159A priority patent/EP0316508B1/en
Priority to EP88104161A priority patent/EP0314859B1/en
Priority to EP88104160A priority patent/EP0319636B1/en
Priority to DE88104161T priority patent/DE3382702T2/en
Priority to DE8383302419T priority patent/DE3380539D1/en
Priority to CA000427088A priority patent/CA1209698A/en
Publication of JPS59171054A publication Critical patent/JPS59171054A/en
Publication of JPH039544B2 publication Critical patent/JPH039544B2/ja
Priority to US08/443,760 priority patent/US5738765A/en
Priority to US08/450,219 priority patent/US5714251A/en
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10584—Record carriers characterised by the selection of the material or by the structure or form characterised by the form, e.g. comprising mechanical protection elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25713—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing nitrogen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)

Abstract

PURPOSE:To obtain a magneto-optical storage element which prevents a change in the lape of time of a recording medium due to oxidation and stabilizes a holding force by laminating an optical recording layer by a rare earth transition thin metallic alloy film, an AlN film being a transparent dielectric film containing no oxygen, and a reflecting film in order of the foregoing on a substrate. CONSTITUTION:A thin amorphous alloy film 12 of a rare earth transition metallic alloy such as Gd, Tb, Fe, etc. is formed as a magneto-optical effect film on a glass substrate 11. Subsequently, an AlN film 13 which does not cause an oxidation-deterioration of the film 12 is formed by spattering in an N2 gas atmosphere by using Al as a target. Next, a reflecting film 14 is formed on the film 13, and a magneto-optical storage element is obtained. The AlN film 13 is transparent, does not contain O2, is dense and does not make O2 and moisture pass through easily, therefore, an oxidation-deterioration of the film 12 is prevented, and when stainless steel is used for the reflecting film 14, it is excellent in its corrosion resistance, and it does not occur that a hole, etc. are generated due to corrosion by a fingerprint, etc. Also, when recording by a laser light, the heat transmitting property is comparatively small, therefore, a small recording energy will do. In this way, an element which has a corrosion resistance and a good durability is obtained.

Description

【発明の詳細な説明】 く技術分野〉 本発明はレーザ等の光により情報の記録・再生・消去等
を行なう磁気光学記憶素子に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a magneto-optical storage element that records, reproduces, erases, etc. information using light such as a laser.

〈従来技術〉 近年ミ光メモリ素子は高密度・大容量のメモリである為
に将来性全期待され多方面で種々の研究開発が行なわれ
ている。中でも使用者が追加記録をなし得る光メモリ素
子（消去は不可能）、及び使用者が追加記録と消去をな
し得る光メモリ素子については強い期待が寄せられ既に
種々の記録媒体や光メモリシステムが発表されている。<Prior Art> In recent years, micro-optical memory devices are high-density, large-capacity memories, so they have great promise and are being researched and developed in a variety of fields. In particular, there are strong expectations for optical memory devices that allow the user to perform additional recording (erasing is not possible), and optical memory devices that allow the user to perform additional recording and erasing, and various recording media and optical memory systems have already been announced. There is.

前者の光メモリ素子の記録媒体としてはＴｅＯｘ、Ｔｅ
Ｓｅ。The recording medium of the former optical memory element is TeOx, Te
Se.

ＴｅＣ等が知られ、後者の光メモリ素子の記録媒体とし
てばＧｄＴｂＦｅ、ＧｄＴｂＤＹＦｅ、ＴｂＦｅ等が知
られている。しかしこれらの記録媒体の大半ば耐食性に
欠ける為従来その対策として光メモリ素子構造に色々な
工夫かなされて来た。TeC and the like are known, and GdTbFe, GdTbDYFe, TbFe and the like are known as recording media for the latter optical memory element. However, since most of these recording media lack corrosion resistance, various improvements have been made to the structure of optical memory elements as a countermeasure.

次に記録媒体が腐食（酸化）された場合の光メモリ素子
の不都合な点について説明を行なう。本発明者は記録媒
体が希土類遷移金属合金を用いて形成される、使用者が
追加記録と消去とをなし得る光メモリ素子（所謂磁気光
学記憶素子）について研究調査を行なった。第１図にそ
の磁気光学記憶素子の従来の具体的構造を示す。１はガ
ラス基板であり、その上に膜厚１００〜２００ＡのＧｄ
ＴｂＦｅ非晶質合金薄膜２（記録媒体）がスパッタリン
グによって形成され、その」二に膜厚３００〜４００Ａ
のＳ　ｉ　０２膜３（透明誘電体膜）がスバッタリング
によって形成され、その上に膜厚３００〜５００ＡのＣ
ｕ膜４（反射膜）が゛スパッタリングによって形成され
ている。Next, the disadvantages of the optical memory element when the recording medium is corroded (oxidized) will be explained. The present inventor conducted research on an optical memory element (so-called magneto-optical memory element) in which the recording medium is formed using a rare earth transition metal alloy and allows the user to perform additional recording and erasing. FIG. 1 shows the specific structure of the conventional magneto-optical memory element. 1 is a glass substrate, on which Gd with a film thickness of 100 to 200A is applied.
A TbFe amorphous alloy thin film 2 (recording medium) is formed by sputtering, and the film thickness is 300-400A.
A Si02 film 3 (transparent dielectric film) is formed by sputtering, and a C
The u film 4 (reflection film) is formed by sputtering.

この構造の磁気光学記憶素子について第２図に示す光学
系で磁気光学回転角の磁場依存性を測定１７た。第２図
において５は単色光を出力する光源（レーザ光源）であ
り、該光源５から出力された光は偏光子６を通過するこ
とにより直線偏光に変えられ、更にバー　フミラー７を
通過して上述した磁気光学記憶素子８に面に垂直に入射
される。上記素子８の記録媒体２への光の入射はガラス
基板１を通じて行なわれる。上記磁気光学記憶素子８か
らの反射光は上記ハーフミラ−７によって進路を変えら
れた後で光検出器９（光の偏光面の回転角を検出）に入
射する。１０は磁場を変える電磁石である。The magnetic field dependence of the magneto-optic rotation angle of the magneto-optic storage element having this structure was measured using the optical system shown in FIG. In FIG. 2, 5 is a light source (laser light source) that outputs monochromatic light, and the light output from the light source 5 is converted into linearly polarized light by passing through a polarizer 6, and further passes through a barf mirror 7. The light is incident on the above-mentioned magneto-optical storage element 8 perpendicularly to the surface. Light is incident on the recording medium 2 of the element 8 through the glass substrate 1. The reflected light from the magneto-optical storage element 8 is deflected by the half mirror 7 and then enters a photodetector 9 (which detects the rotation angle of the polarization plane of the light). 10 is an electromagnet that changes the magnetic field.

以上の光学系を用いて磁気光学回転角の磁場依存性を測
定したところ第３図の結果が得られた。When the dependence of the magneto-optic rotation angle on the magnetic field was measured using the above optical system, the results shown in FIG. 3 were obtained.

同図において横軸は印加した磁場Ｈの強さを示し、縦軸
はカー回転角θにの角度を示している。同図のＨｃは保
磁力（磁化を反転ｊる磁力）の値である。この保磁力の
値は磁気光学記憶素子において極めて重要な要素である
。保磁力が大き過ぎれば・時報の記録に過大な熱か必要
となり半導体レーザ等の小型レーザでは記録が困難な場
合かある。又情報の記録時に伺与する磁場も過大なもの
が要求される。−万保持力が小さ過ぎれば外部温度ある
いけ外部磁場の比較的僅かな上昇によって記録情報が誤
まって消滅する虞れがある。一般的に記録媒体の保磁力
の値が経時変化した場合、記録に必要な温度、磁場の値
は変化するので、理想的には保磁力の値が一定であるこ
とが望ましい。In the figure, the horizontal axis indicates the strength of the applied magnetic field H, and the vertical axis indicates the Kerr rotation angle θ. Hc in the figure is the value of coercive force (magnetic force that reverses magnetization). The value of this coercive force is an extremely important element in magneto-optical storage elements. If the coercive force is too large, too much heat is required to record the time signal, which may be difficult to do with a small laser such as a semiconductor laser. Furthermore, an excessively large magnetic field is required when recording information. - If the coercive force is too small, there is a risk that recorded information will be erroneously erased due to a relatively small increase in external temperature or external magnetic field. Generally, if the coercive force value of a recording medium changes over time, the temperature and magnetic field values necessary for recording will also change, so ideally it is desirable that the coercive force value be constant.

さて、上記磁気光学記憶素子の記録媒体の保磁力の値は
上記記録媒体が希土類と遷移金属の合金の場合上記希土
類の組成比によって大きく変化するものである。第４図
はＧｄＴｂＦｅ非晶質合金薄膜における希土類（Ｇｄ、
Ｔｂ）の組成比と保磁力の値との関係を示すグラフ図で
ある。同図の横軸はスパッタリングの際に鉄ターゲツト
上に置かれた希土類の面積比を示す。尚Ｇｄ、Ｔｂは同
量である。Now, when the recording medium of the magneto-optical storage element is an alloy of rare earth and transition metal, the value of the coercive force of the recording medium varies greatly depending on the composition ratio of the rare earth. Figure 4 shows rare earth (Gd,
FIG. 2 is a graph diagram showing the relationship between the composition ratio of Tb) and the value of coercive force. The horizontal axis in the figure shows the area ratio of the rare earth metal placed on the iron target during sputtering. Note that the amounts of Gd and Tb are the same.

同図のグラフから室温が補償温度であるＧｄＴｂＦｅの
非晶質合金薄膜の希土類％は約２６．３％であることが
わかる。ここで磁気光学効果の変化特性（第３図に示す
如きカー回転角の変化特性）はＧｄＴｂＦｅ非晶質合金
薄膜の希土類％の値が上記２６．３％の点を境に逆転し
、上記２６．３％より希土類％が多い（希土類リンチ）
の場合右」二がりの変化を示し上記２６，３％より希土
類％が少ない（鉄リッチ）場合左上がりの変化を示す。It can be seen from the graph in the same figure that the rare earth percentage of the GdTbFe amorphous alloy thin film whose compensation temperature is room temperature is about 26.3%. Here, the change characteristics of the magneto-optic effect (the change characteristics of the Kerr rotation angle as shown in FIG. 3) are reversed after the rare earth percentage value of the GdTbFe amorphous alloy thin film is 26.3%, and .Rare earth% is higher than 3% (rare earth lynch)
In the case of 26.3%, the change shows an upward slope to the right, and in the case where the rare earth percentage is lower than the above 26.3% (iron rich), the change shows an upward slope to the left.

本発明者は第４図のＡで示す組成の記録媒体を備えた構
造の磁気光学記憶素子を作成し、その信頼性を調べる為
に７０℃の状態て４２時間放置した。すると保磁力Ｈｅ
が３に−ＯｅのＢで示す組成の記録媒体に変化（変化状
態を矢印で示す）していた。これ１ｄＧｄＴｂＦｅ　非
晶質合金膜中の希土類されただけの量の希土類が磁気的
特性に開力できなくなった為と考えられ・る。The present inventor created a magneto-optical memory element having a structure including a recording medium having the composition shown by A in FIG. 4, and left it at 70° C. for 42 hours in order to examine its reliability. Then, the coercive force He
was changed to a recording medium having a composition indicated by B of -Oe (the changed state is indicated by an arrow). This is thought to be because the amount of rare earth in the 1dGdTbFe amorphous alloy film is no longer able to influence the magnetic properties.

以上のように従来構造の磁気光学記憶素子においては酢
化による記録媒体の経時変化を防止することができず、
一定した保磁力特性を得ることができない為情報の記録
を安定して行なえなかった。As mentioned above, in the magneto-optical storage element of the conventional structure, it is not possible to prevent the aging of the recording medium due to acetylation.
Since it was not possible to obtain constant coercive force characteristics, information could not be recorded stably.

〈目　的〉 本発明は以上の従来問題点を解消する為になされたもの
であり磁気光学記憶素子の構造に改良を加えることによ
って記録媒体の酸化を防止しもって保磁力特性の安定化
及び情報の記録特性の安定化を計ることを目的とするも
のである。<Purpose> The present invention has been made to solve the above-mentioned conventional problems, and by improving the structure of a magneto-optical storage element, it prevents oxidation of the recording medium, stabilizes the coercive force characteristics, and improves information. The purpose of this is to stabilize the recording characteristics of.

〈実施例〉 以下、本発明に係る磁気光学記憶素子の一実施例につい
て図面を用いて詳細に説明する０第５図は本発明に係る
磁気光学記憶素子の一実施例の構造を示す一部側面断面
図である。１１はガラス基板であり、その上に膜厚１５
０〜２００ＡのＧｄＴｂＦｅ非晶質合金薄膜１２（記録
媒体）がスノ＜ツタリングによって形成され、その上に
膜厚４００〜５ｏｏＸのＡＩＮ（窒化アルミニウム）膜
１３（透明誘電体膜）が窒素雰囲気中てのアルミニウム
の反応性スパッタリングによって形成され、そのＬに膜
厚５００〜６０　ｏ久のステンレス（例工ば５ＵＳ３０
４）膜１４（反射膜）がスパッタリングによって形成さ
れる。<Example> Hereinafter, an example of the magneto-optical memory element according to the present invention will be described in detail with reference to the drawings. FIG. 5 is a partial diagram showing the structure of an example of the magneto-optical memory element according to the present invention. FIG. 11 is a glass substrate, on which a film with a thickness of 15
A GdTbFe amorphous alloy thin film 12 (recording medium) with a thickness of 0 to 200 A is formed by snootering, and an AIN (aluminum nitride) film 13 (transparent dielectric film) with a film thickness of 400 to 5 ooX is formed thereon in a nitrogen atmosphere. It is formed by reactive sputtering of aluminum, and the L is made of stainless steel (for example, 5US30) with a thickness of 500 to 60 degrees.
4) Film 14 (reflective film) is formed by sputtering.

本発明者は以上の構造の磁気光学記憶素子を４種類作成
し７０°Ｃの温度状態での保存テストを行なった。その
保存テストの結果を第６図に示す（４種の素子のテスト
結果をｏ、×、・、Δて示す０Δは多く・と重なる。）
０同図に示す如＜１記実施例の構造の磁気光学記憶素子
では上記保存テスト下の状態に約１００装置いた時点に
おいて初期の保磁力（１，８〜２．２ｋＯｅの範囲内）
より約０．４ｋＯｅ　の僅かな保磁力壇加が見られた。The present inventor created four types of magneto-optical memory elements having the above structure and conducted a storage test at a temperature of 70°C. The results of the preservation test are shown in Fig. 6 (the test results for the four types of elements are shown as o, ×, ·, Δ, where 0Δ overlaps with many).
0 As shown in the figure, the magneto-optical memory element having the structure of Example 1 has an initial coercive force (within the range of 1.8 to 2.2 kOe) when approximately 100 devices have been subjected to the storage test described above.
A slight increase in coercive force of approximately 0.4 kOe was observed.

この保持力増加の度合は従来構造の磁気光学素子々比較
−すれは極端に減少１〜でいることが判る。この理由は
従来構造において透明誘電体膜として使われたＳｉＯ２
膜に比へ窒化アルミニウム膜を用いた場合はその膜自体
に酸素の成分が無い為、アルミニウムターゲットを用い
て窒素雰囲気中で反応性スパッタリンクして上記膜形成
すればその膜形成時において記録媒体に酸素が侵入する
虞れがない為である。この点に鑑みれば」二記透明誘電
体膜を他の酸素を含有しない材質のもの（例えばＭ　ｇ
　Ｆ　２　ｌＺｎＳ、ＣｅＦ３．Ａ６Ｆ３・３ＮａＦ）
て形成１．でも構わないが、しかし上記他の材質にて」
二記透明誘電体膜をスパッタリングにで形成した場合、
上記他の材質のターゲットが多く多孔質でありその孔中
にとり込まれた酸素や水分がスパッタリング中に放出さ
れて記録媒体を酸化する場合がありあ寸り好゛ましくな
い。それに比してアルミニウムの窒化膜であればターゲ
ットがアルミニウムのみである為？−ゲントの節約にも
なり更にアル２ニウノ・ターゲットが多孔質てない為に
その孔中に酸素や水分をとり込む虞れかないのである。It can be seen that the degree of increase in holding force is extremely reduced by 1 to 1 compared to magneto-optical elements of conventional structure. The reason for this is that SiO2 was used as a transparent dielectric film in the conventional structure.
When an aluminum nitride film is used as the film, the film itself does not contain oxygen, so if the film is formed by reactive sputtering in a nitrogen atmosphere using an aluminum target, the recording medium will not be affected when the film is formed. This is because there is no risk of oxygen invading. In view of this point, the transparent dielectric film described in "2" should be made of other oxygen-free materials (for example, M
F 2 lZnS, CeF3. A6F3・3NaF)
Formation 1. I don't mind, but with other materials mentioned above.''
When the transparent dielectric film mentioned above is formed by sputtering,
Many of the targets made of other materials mentioned above are porous, and oxygen and moisture trapped in the pores may be released during sputtering and oxidize the recording medium, which is not desirable. In comparison, if it is an aluminum nitride film, the target is only aluminum? - This saves energy, and since the Al2 Niuno target is not porous, there is no risk of oxygen or moisture being taken into its pores.

又、窒化アルミニウムはその構造上非常に緻密な膜を形
成できるので外部からの酸素、水分を通し難く、この点
においても記録媒体の酸化を防止するものである。Furthermore, because of its structure, aluminum nitride can form a very dense film, making it difficult for oxygen and moisture to pass through from the outside, and in this respect also prevents oxidation of the recording medium.

ここで上記実施例において反射膜と１−でステンレス膜
ヲ用いているがこのステンレス膜は磁気光学記憶素子の
反射膜として非常に優れている。次にステンレス膜によ
る反射膜の利点について説明を行なう。Here, in the above embodiment, a stainless steel film is used as the reflective film 1-, and this stainless steel film is very excellent as a reflective film for a magneto-optical memory element. Next, the advantages of the reflective film made of stainless steel film will be explained.

（１）耐蝕性　周知の如くステンレスは耐蝕性において
非常に優れたものである。例えばＣｕによって反射膜を
形成した場合はその膜に指紋を付ければ暫くして微小な
穴が開く。しかしステンレスによって反射膜を形成した
場合はその膜に指紋を付けても穴は全く開がないことが
確認された（尚、Ｎｉによる反射膜も同様に穴は開がな
かったＯ）０以上の様にステンレスは耐蝕性に優れ−Ｃ
いるので記録媒体の耐蝕性にも寄与てきるものである。(1) Corrosion resistance As is well known, stainless steel has excellent corrosion resistance. For example, if a reflective film is formed using Cu, if a fingerprint is placed on the film, minute holes will be created after a while. However, when the reflective film was formed using stainless steel, it was confirmed that no holes were formed even when a fingerprint was placed on the film (note that the reflective film made of Ni also did not form any holes). Stainless steel has excellent corrosion resistance.
Therefore, it also contributes to the corrosion resistance of the recording medium.

（２）熱伝導性　ステンレスばＣｕ　＋　Ａ　ｕ　＋　
Ａ　ｇ　、Ａ　ｉｌ’等の金属に比べて熱伝導性が悪い
。この為記録媒体にレーザを照射して加熱した時熱の逃
げを少なくできるのでレーザによる記録エネルギーを少
なくてきるものである。本発明では上記した透明誘電体
膜の拐質と１〜で窒化アルミニウムを用いているが、窒
化アルミニウムは比較的熱伝導層に良く焦が逃げ易いの
で窒化アルミニラ犬を透明誘電体膜の材質として用いた
場合（／９ｊ、ステンレスによる反射膜が特に適してい
る。(2) Thermal conductivity Stainless steel Cu + A u +
It has poor thermal conductivity compared to metals such as A g and A il'. For this reason, when the recording medium is irradiated with a laser to heat it, it is possible to reduce the amount of heat escaping, thereby reducing the recording energy by the laser. In the present invention, aluminum nitride is used as the material for the transparent dielectric film described above in 1 to 1. However, aluminum nitride is used as the material for the transparent dielectric film because aluminum nitride is relatively good for heat conduction layers and burns easily. When using (/9j), a reflective film made of stainless steel is particularly suitable.

（３）膜形成上の容易性　ステンレスはスパッタリング
が１−易い材質であるので膜形成が容易であり製造上有
利である。(3) Ease of film formation Stainless steel is a material that is easily sputtered, so it is easy to form a film and is advantageous in manufacturing.

以上の本発明に係る実施例においては記録媒体としてＧ
ｄＴｂＦｅ非晶質合金を用いたが、他の希土類遷移金属
合金（ＧｄＴｂＤｙＦｅ、ＴｂＦｅ、ＴｂＤ３’Ｆｅ等
）であっても本発明において適用可能である。又透明誘
電体膜である窒化アルミニウム膜ｃ１、蒸着等信の製法
によって形成してもよい。又磁気光学記憶素子の各膜の
膜厚Ｔ−ｊ　ｌ、記実施例のｆｔ７ｔ　ｉ／Ｃ必ずしも
′限らな＼てもよ（兄 〈効　果２ 本発明によれば磁気光学記憶素子の記録媒体の酸化を防
止することができるのて素子の信頼性が犬きく向上する
ものである。In the above embodiments of the present invention, G is used as a recording medium.
Although dTbFe amorphous alloy was used, other rare earth transition metal alloys (GdTbDyFe, TbFe, TbD3'Fe, etc.) can also be applied in the present invention. Alternatively, the aluminum nitride film c1, which is a transparent dielectric film, may be formed by a manufacturing method such as vapor deposition. Furthermore, the film thickness T-j l of each film of the magneto-optical memory element may not necessarily be limited to ft7t i/C in the embodiment described above. The reliability of the device is greatly improved because the oxidation of the material can be prevented.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の磁気光学記憶素子の構造の一部側面断面
図、第２図は測定光学系の構成説明図、第３図は磁気光
学回転角の磁場依存性を示すグラフ図、第４図はＧｄＴ
ｂＦｅ非晶質合金薄膜の希土類の組成比と保磁力の値と
の関係を示すグラフ図、歯巾、１ニガラス基板　２　：
　ＧｄＴｂＦｅ非晶質合金薄膜　３　：　Ｓ　ｉ０２膜
　　４　：　Ｃｕ膜５：光源　６：偏光子　７：ハーフ
ミラー８：磁気光学記憶素子　９：光検出器 １０：電磁石　１１ニガラス基板　１２：ＧｄＴｂＦｅ
非晶質合金薄膜　１３　：ＡＩＮ膜１４ニステンレス膜 代理人　弁理士　福　士　愛　彦（他２名）第１図 ２５６− ｊト」二ずの　ｔ％ノ 第　４ｉ’）Fig. 1 is a partial side sectional view of the structure of a conventional magneto-optical storage element, Fig. 2 is an explanatory diagram of the configuration of the measurement optical system, Fig. 3 is a graph showing the magnetic field dependence of the magneto-optic rotation angle, and Fig. 4 is a graph showing the magnetic field dependence of the magneto-optic rotation angle. The figure is GdT
Graph showing the relationship between rare earth composition ratio and coercive force value of bFe amorphous alloy thin film, tooth width, 1 glass substrate 2:
GdTbFe amorphous alloy thin film 3: Si02 film 4: Cu film 5: Light source 6: Polarizer 7: Half mirror 8: Magneto-optical memory element 9: Photodetector 10: Electromagnet 11 Glass substrate 12: GdTbFe
Amorphous alloy thin film 13: AIN film 14 Stainless steel film Agent Patent attorney Yoshihiko Fukushi (and 2 other people)

Claims (1)

【特許請求の範囲】 １、基板上に希土類遷移金属合金薄膜と、酸素を含有し
ない透明誘電体膜である窒化アルミニウム膜と、反射膜
とをこの順にて積層したことを特徴とする磁気光学記憶
素子。 ２、前記反射膜がステンレスからなる膜であることを特
徴とする特許請求の範囲第１項記載の磁気光学記憶素子
。[Claims] 1. A magneto-optical memory characterized in that a rare earth transition metal alloy thin film, an aluminum nitride film which is a transparent dielectric film containing no oxygen, and a reflective film are laminated in this order on a substrate. element. 2. The magneto-optical memory element according to claim 1, wherein the reflective film is a film made of stainless steel.
JP4548783A 1982-12-15 1983-03-17 Magneto-optical storage element Granted JPS59171054A (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
JP4548783A JPS59171054A (en) 1983-03-17 1983-03-17 Magneto-optical storage element
DE3382791T DE3382791T2 (en) 1982-12-15 1983-04-20 Magneto-optical memory.
EP88104161A EP0314859B1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
DE88104161T DE3382702T2 (en) 1982-12-15 1983-04-28 Magneto-optical memory.
EP92110340A EP0509555B1 (en) 1982-12-15 1983-04-28 A method of making a magneto-optic memory device
DE8888104159T DE3382671T2 (en) 1982-12-15 1983-04-28 MAGNETO-OPTICAL MEMORY.
EP88104159A EP0316508B1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
EP83302419A EP0111988B2 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
EP88104160A EP0319636B1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
DE8888104160T DE3382672T2 (en) 1982-12-15 1983-04-28 MAGNETO-OPTICAL MEMORY.
DE8383302419T DE3380539D1 (en) 1982-12-15 1983-04-28 Magneto-optic memory device
CA000427088A CA1209698A (en) 1982-12-15 1983-04-29 Magneto-optic memory device
US08/443,760 US5738765A (en) 1982-12-15 1995-05-18 Magneto-optic memory device
US08/450,219 US5714251A (en) 1982-12-15 1995-05-25 Magneto-optic memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4548783A JPS59171054A (en) 1983-03-17 1983-03-17 Magneto-optical storage element

Publications (2)

Publication Number Publication Date
JPS59171054A true JPS59171054A (en) 1984-09-27
JPH039544B2 JPH039544B2 (en) 1991-02-08

Family

ID=12720754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4548783A Granted JPS59171054A (en) 1982-12-15 1983-03-17 Magneto-optical storage element

Country Status (1)

Country Link
JP (1) JPS59171054A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093174A (en) * 1989-07-04 1992-03-03 Teijin Limited Optical recording medium
US5232790A (en) * 1990-04-28 1993-08-03 Kyocera Corporation Magneto-optical recording disc and method of producing it

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674844A (en) * 1979-11-21 1981-06-20 Fuji Photo Film Co Ltd Magnetic recording medium
JPS586542A (en) * 1981-07-02 1983-01-14 Sharp Corp Magnetooptic storage element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674844A (en) * 1979-11-21 1981-06-20 Fuji Photo Film Co Ltd Magnetic recording medium
JPS586542A (en) * 1981-07-02 1983-01-14 Sharp Corp Magnetooptic storage element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093174A (en) * 1989-07-04 1992-03-03 Teijin Limited Optical recording medium
US5232790A (en) * 1990-04-28 1993-08-03 Kyocera Corporation Magneto-optical recording disc and method of producing it

Also Published As

Publication number Publication date
JPH039544B2 (en) 1991-02-08

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