JPS59169210A - Lamination type wide band piezo-oscillator - Google Patents

Abstract

PURPOSE:To obtain a miniature and economical wide band piezo-oscillator having high accuracy by providing one or more capacitors and resistance elements which can be replaced with those capacitors and resistance elements provided in an oscillating circuit. CONSTITUTION:One of crystal oscillators 21-1-21-3 having different characteristics is selected with desired characteristics. For this purpose, capacitors 1-1-1-3 and 3-1-3-3 and resistances 11-1-11-3 are selected in accordance with the characteristics of the desired crystal oscillator with no connection of an inductor 23 as long as the oscillation frequency given from an oscillating circuit is defined as a basic wave. In case the higher order frequencies is desired such as the 3rd, 5th frequencies, etc., the inductor 3 is connected to select the above- mentioned capacitors and resistances. Thus it is possible to obtain a miniature and economical wide band piezo-oscillator having high accuracy.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a broadband piezoelectric oscillator having a composite laminated ceramic substrate containing a capacitor, a resistor, and a conductive trace.

Conventionally, crystal resonators, capacitors, etc. in crystal oscillators, etc.
Passive components such as resistors and active components such as transistors and diodes were made by installing and soldering a printed wiring layer on a ceramic substrate to form a circuit and using it as a unit. In the past, plate-type or chip-type capacitors, chip resistors, etc. had to be installed one by one.On the other hand, conventionally, at the oscillation frequency of an oscillator using a piezoelectric element such as a crystal resonator, its fundamental wave, 3rd order, and 5th order In order to obtain higher-order frequencies such as, it was necessary to change the electric circuit and the parts that make up the circuit, such as capacitors and resistors. More specifically, FIG. 1 is a circuit diagram for generating a fundamental wave constituted by a crystal oscillator having a certain natural frequency. The circuit is a crystal oscillator 21,
It is composed of an amplifying transistor 22, capacitors 1-6, and resistors 11-15. This crystal oscillator 21
In order to obtain high-order frequencies such as the 3rd and 5th orders of In other words, new circuits had to be formed, such as changing things.

Furthermore, when attempting to obtain a desired oscillation frequency using a crystal resonator with different characteristics, components such as capacitors and resistors had to be changed.

In this way, in the past, the circuit had to be formed or changed each time for a desired frequency, which was disadvantageous in terms of cost, time, and shape. The present invention aims to realize a compact, highly accurate, and economically superior broadband piezoelectric oscillator.

That is, the present invention provides a laminated sintered body in which an insulator, a dielectric, a conductor, and a resistor are integrally laminated and fired, a semiconductor element and an inductor installed on the surface of the laminated sintered body, a plurality of piezoelectric vibrators, and a plurality of piezoelectric vibrators. A multilayer broadband piezoelectric oscillator comprising a switch connectable to any one of the piezoelectric vibrators, wherein a capacitor, a resistance element, and a wiring conductor are formed inside the multilayer sintered body. An oscillation circuit is configured including a capacitor, a resistance element, a wiring conductor, the inductor, and a piezoelectric vibrator inside the laminated sintered body, and the capacitor and resistance element in the oscillation circuit are replaced with these, respectively. The present invention is a stacked voltage controlled piezoelectric oscillator characterized in that one or more possible capacitors and resistance elements are arranged.

Hereinafter, the present invention will be explained in detail based on examples.

FIG. 3 shows an example of an implementation circuit according to the present invention. Here 21-
1 to 21-3 are crystal resonators with different characteristics;
-1 to 1-3 and 3-1 to 3-3 are compatible capacitors when a desired crystal oscillator is selected;
11-3 is a matching resistor, and n is an inductor necessary to obtain a high-order frequency such as 3rd or 5th order.

In this circuit, if you select a crystal oscillator with desired characteristics from among multiple crystal oscillators 21-1 to 21-3, and if you want the oscillation frequency to be the fundamental wave from this circuit, inductor n is not connected. , and capacitors 1-1 to 1-3 and 3
-1 to 3-3 and resistors 11-1 to 11-3 are selected in accordance with the characteristics of the crystal resonator. In addition, if the frequency is set to a high-order frequency such as 3rd or 5th order (G), inductor n is connected and capacitors 1-1 to 1-3. 3-1 to 3-
3 and the resistors 11-1 to 11-3.

Next, a cross-sectional view of the structure of the oscillator of this example is schematically shown in the fourth section.
As shown in the figure. Here, capacitors 1-1 to 1- other than the crystal resonator, transistor, and inductor shown in FIG.
3.2.3-1 to 3-3.4 to 6, and resistance 11-1
~11-3.12~15 are formed inside the laminated substrate. Also, a connecting terminal part for forming a circuit suitable for a crystal resonator with specific characteristics, a connecting terminal part for forming a circuit suitable for oscillating high-order frequencies such as 3rd order and 5th order, A switch for selecting one crystal resonator having a desired frequency frequency from among the plurality of crystal resonators is formed on the surface of the laminated substrate.

On the other hand, in the figure, 51 is an insulator sheet, 52 is a dielectric sheet, the older brother is a through-hole part, 54 is a resistor layer formed by a printing method or a green sheet method, 55 is a conductor layer,
6 is an internal electrode layer for forming a capacitor, 61 is a resistor forming portion, 62 is a capacitor forming portion, 63 is a connecting terminal portion, 64
71 is a crystal oscillator, 72 is a transistor, and 73 is an inductor.

The adjustment capacitors 1-1 to 1-3.3-1 to 3-3
The resistors 11-1 to 11-3 can be selected by connecting connecting terminal portions formed on the surface of the substrate with short bars.

5 to 8 show an example of manufacturing the adjustment capacitor, and FIGS. 9 to 11 show an example of manufacturing the adjustment resistor. FIGS. 5(a) and 5(b) show the insulator sheet 51
An upper pot connection terminal portion 63 is formed. Figure 6(a)
, (b) is an insulating sheet on which a resistor layer 54 is formed and a conductor is formed in the through hole, and FIG. 7(a).

(b) shows a dielectric sheet 52 on which internal electrode layers for capacitor formation of three types of shapes are formed, FIG. 8 (+1, (b)
) is an insulating sheet on which an internal electrode layer for forming a capacitor is also formed. The sheet shown in FIG. 5 is placed as the outermost layer, and then the sheets shown in FIGS. 6 to 8 are laminated in this order and fired. 9(a) and 9(b) also have connection terminal portions 63 formed on an insulating sheet 51, similar to FIG. 5. 10th
Figures (a) and (b) show wiring conductors formed on an insulator sheet, and Figures 11 (a) and (b)
is an insulator sheet on which three types of resistor sheets of different shapes are formed, and the adjustment resistor is produced by laminating and firing in this order. Here, (a) of each figure is a plan view of the sheet, (b)
) is a cross-sectional view.

The insulator raw sheet used here is aluminum oxide 40~
A mixed powder selected to have a total amount of 100% in the composition range of 60% by weight and 40 to 60% by weight of lead borosilicate crystallized glass is made into a slurry with an organic binder, an organic solvent, and a plasticizer, and then slipped using a doctor blade method or the like. A green sheet of 20 to 300 μm is formed on a polyester film by casting film formation, peeled off, and then punched to a desired size to obtain a sheet.

The composition of the crystallized glass powder used here is based on the oxide conversion notation: lead oxide, boron oxide, silicic acid dioxide, oxides of group ■ elements, oxides of group ■ elements (excluding carbon, silicon, and lead). weight ratio of 3 to 65%, 2 to 50 inches, 4
It is composed of a composition selected such that the total amount is 100 pieces with a Mu content ranging from ~65%, 0.1~50%, and 0.02~20%.

The dielectric sheet is Fe2O,, PbO, Nb2O,, W
O3 powder is removed from a specified #f+ powder, mixed in a ball mill, filtered and dried, pre-baked at 700 to 800°C, and the ball milled powder is mixed with an organic binder, an organic solvent, and a plasticizer to form a slurry and form an insulator. A sheet of 10 μm to 200 μm was obtained by slip casting film formation such as a doctor blade method in the same manner as in the preparation of the green sheet. The dielectric material used here was Pb(Fe%・Nb%)o, (trans)(
Fe%/W%). -, 7o, is a composite perovskite compound.

The resistor may be formed by screen printing, in which a resistor paste is formed on an insulator green sheet or dielectric green sheet, or by using resistor green sheet pieces. Here, the resistor paste is obtained by kneading the resistor material powder and the organic vehicle using a triple roll or the like. On the other hand, for the resistor green sheet, the ruthenium dioxide powder and the alumina/crystalline glass powder used for the insulator raw sheet are mixed in a weight ratio of 10:90 to 50:1, respectively.
Mix to obtain the desired resistance value in the range of 50,
Ethyl cellosolve, an organic solvent of butyl calpitol, an organic plasticizer of butyl butyl phthalate, and polyvinyl butyral as an organic binder were added to form a slurry, and a film was formed in the same manner as described above to obtain a sheet of 20 μm to 200 μm.

The conductors used for the electrode layers and signal lines are Au and Ag.

A paste made by kneading a single metal such as Pd or Pt or an alloy powder containing one or more metals with an organic vehicle was used.

The various sheets and pastes produced as described above were laminated in a predetermined arrangement, cut, and fired at 900°C.

Next, a semiconductor element, a plurality of piezoelectric vibrators, and a piezoelectric vibrator selection switch were formed on the surface of this laminated sintered body.

As a result of realizing a stacked broadband crystal oscillator using the construction method of the present invention as described above, a broadband piezoelectric oscillator with a volume reduced to 115 to IAo of the conventional shape can be realized, and the desired piezoelectric vibrator can be realized despite the smaller size. Since it has a circuit forming mechanism that is compatible with the characteristics of the piezoelectric vibrator and piezoelectric vibrator, it is multifunctional, highly precise, and has a versatile structure that is also economical.

Note that it is of course possible to use a vibrator using other piezoelectric materials instead of the crystal vibrator used in the embodiment.

[Brief explanation of the drawing]

1 and 2 are circuit diagrams showing an example of a conventionally used crystal oscillator for fundamental waves and high-order frequencies, FIG. 3 is a circuit diagram showing an embodiment of the present invention, and FIG. 4 is a circuit diagram showing an example of the present invention. FIG. 1 is a schematic cross-sectional view of a stacked broadband crystal oscillator according to an embodiment of the present invention. 5 to 11 are diagrams showing a method of manufacturing an oscillator according to the present invention. In the figure, 1 to 6 are capacitors, 11 to 15 are resistors,
2 is a crystal resonator, 22 is a transistor, n is an inductor, 31 to 36 are capacitors, 41 to 45 are resistors, 5
1 is an insulator sheet, 52 is a dielectric sheet, 53 is a through-hole portion, 54 is a resistor layer, 55 is a conductor layer, 56 is an internal electrode layer for forming a capacitor, 61 is a resistor forming portion, 62 is a capacitor forming portion, 63 is a connection terminal section, 71 is a crystal resonator, 72 is a transistor, and 73 is a changeover switch. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 (0) <b) Figure 9

Claims (1)

[Claims] A laminated sintered body formed by laminating and firing an insulator, a dielectric, a conductor, and a resistor, a semiconductor element and an inductor installed on its surface, a plurality of piezoelectric vibrators, and among the plurality of piezoelectric vibrators. A multilayer broadband piezoelectric oscillator is provided with a switch connectable to any one of the multilayer sintered body, in which a capacitor, a resistive element, and a wiring conductor are formed inside the multilayer sintered body. An oscillation circuit is configured including a capacitor, a resistance element, a wiring conductor, the inductor, and a piezoelectric vibrator inside the body, and each of the capacitor and resistance element in the oscillation circuit has one or more replaceable elements. A multilayer voltage-controlled piezoelectric oscillator characterized by the arrangement of a capacitor and a resistance element.