JPS591679A - Controlling and administering method of etching solution - Google Patents

Controlling and administering method of etching solution

Info

Publication number
JPS591679A
JPS591679A JP10924782A JP10924782A JPS591679A JP S591679 A JPS591679 A JP S591679A JP 10924782 A JP10924782 A JP 10924782A JP 10924782 A JP10924782 A JP 10924782A JP S591679 A JPS591679 A JP S591679A
Authority
JP
Japan
Prior art keywords
etching
hydrochloric acid
soln
concn
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10924782A
Other languages
Japanese (ja)
Other versions
JPH0158270B2 (en
Inventor
Ryozo Kawai
河合 良三
Jun Kokubu
国分 純
Yoshiji Namikawa
好次 南川
Yutaka Oshida
豊 押田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Priority to JP10924782A priority Critical patent/JPS591679A/en
Publication of JPS591679A publication Critical patent/JPS591679A/en
Publication of JPH0158270B2 publication Critical patent/JPH0158270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means

Abstract

PURPOSE:To administer and control the concn. of the compsn. of a copper chloride etching soln. so as to stabilize the rate of etching, by detecting directly the concn. of the hydrochloric acid in said etching soln. and replenishing the hydrochloric acid in said etching soln. in accordance with the preset concn. of the hydrochloric acid. CONSTITUTION:Part of the above-described etching soln. is removed to the outside of the system from an etching device provided with an etching bath, a detection bath, a regeneration bath, etc. in the stage of regenerating the etching soln. by adding hydrochloric acid and H2O2. The soln. is diluted by using a soln. of a specified concn. prepd. from an aq. soln. of 0.01-100g/gl alkali of NaOH or the like or water, and the concn. of the hydrochloric acid is detected continuously or intermittently. A soln. of a specified concn. prepd. from an aq. soln. of 10-200g/l alkali is used as the alkali to be used in titration for the purpose of said detection. Water or hydrochloric acid is replenished to a part of said etching device in accordance with the preset range of the concn. of the hydrochloric acid to control the concn. of the hydrochloric acid in the etching soln. As a result, the variance in the concn. of the hydrochloric acid in the soln. is reduced, the balance between H2O2 and the hydrochloric acid is maintained to be constant and the stable etching is accomplished for a long period of time.

Description

【発明の詳細な説明】 本発明は塩化銅エツチング液の制御管理方法に関し、銅
張り積層板などを能率よくかつ精度高くエツチングを行
なうことができる様にエツチング液を効果的に制御、管
理する方法に係る。
[Detailed Description of the Invention] The present invention relates to a method for controlling and managing a copper chloride etching solution, and a method for effectively controlling and managing an etching solution so that copper-clad laminates and the like can be etched efficiently and with high precision. Pertains to.

従来、銅及び銅合金をエツチングする際、エツチング液
として塩化第二銅溶液が使用されることはよ(知られて
いる。該エツチング液によりエツチングを行う際、エツ
チング速度の急激な変化を起させることなく、エツチン
グ液の液組成濃度を一定に保って、エツチング速度の急
激な変化を起させないようにすることが重要である。こ
のエツチング速度を急激に変化させる因子は、液中の塩
化第一銅濃度、塩化第二銅濃度、塩酸濃度及び過酸化水
素濃度である。
Conventionally, when etching copper and copper alloys, a cupric chloride solution is often used as an etching solution. It is important to keep the composition and concentration of the etching solution constant to avoid sudden changes in the etching rate. These are copper concentration, cupric chloride concentration, hydrochloric acid concentration, and hydrogen peroxide concentration.

従来、これらの濃度を制御する方法として、塩化第一銅
の濃度は、OF2計、定電位電解計、比色計で検出し、
過酸化水素及び再生理論量の塩酸を過酸化水素補充量と
比例させて直接エツチング槽又は再生槽のエツ+71f
ic補充L、また、塩化第二銅の濃度は比重計で検出し
、水または塩酸を補充することにより一般に制御されて
いた。この様に従来は液中の塩化第−銅及び塩化第二銅
の濃度のみを検出する方法で制御、管理されていた。
Conventionally, as a method to control these concentrations, the concentration of cuprous chloride was detected using an OF2 meter, a potentiostatic electrometer, or a colorimeter.
Hydrogen peroxide and regeneration theoretical amount of hydrochloric acid are directly added to the etching tank or regeneration tank in proportion to the hydrogen peroxide replenishment amount +71f.
ic supplementation L, and the concentration of cupric chloride was detected with a hydrometer and generally controlled by supplementing with water or hydrochloric acid. In this way, conventionally, control and management has been carried out by detecting only the concentrations of cupric chloride and cupric chloride in the liquid.

しかしながらこの様な制御、管理方法ではエツチング液
中の塩酸濃度が直接検出されず、補充される過酸化水素
と塩酸とのバランスがくずれ易く、一定した塩酸濃度が
得難く、このため一定の精度を保ってエツチングするこ
とが出来短い欠点があった。特に近年、−エツチング速
度を高め、生産性を上げる必要から遊離塩酸濃度を2〜
6モル/1程度の高塩酸濃度として使用さ#Lることか
多い。たとえばプリント回路基板等の処理量、回路パタ
ーンの密度などが変動すると副反応の空気酸化による塩
酸の消費割合が変化し、浴の塩酸濃度が変化するためで
、たとえば高濃ル塩酸浴では、塩酸が2.5モル/看か
ら4.5モル/看まで変動するとエツチング速度は28
μm/分から50μm/分まで変動する。このように塩
酸濃度の変化によるエツチング速度のバラツキが激しく
、大きな問題となって来ている。
However, with such control and management methods, the concentration of hydrochloric acid in the etching solution cannot be directly detected, and the balance between the hydrogen peroxide and hydrochloric acid that is replenished is likely to be lost, making it difficult to obtain a constant concentration of hydrochloric acid. It had the disadvantage that it could not be easily maintained and etched. Particularly in recent years, the concentration of free hydrochloric acid has been reduced from 2 to 2 to increase the etching rate and productivity.
#L is often used as a high hydrochloric acid concentration of about 6 mol/1. For example, if the amount of processed printed circuit boards or the density of circuit patterns changes, the rate of consumption of hydrochloric acid due to air oxidation as a side reaction will change, and the concentration of hydrochloric acid in the bath will change. When the etching rate varies from 2.5 mol/min to 4.5 mol/min, the etching rate increases to 28 mol/min.
It varies from μm/min to 50 μm/min. As described above, the etching rate varies greatly due to changes in the hydrochloric acid concentration, which has become a major problem.

本発明者らは、上記した如きのエツチング速度のバラツ
キをなくシ、精度よくエツチングするためにエツチング
液の液組成濃度の管理制御方法について種々検討を重ね
、エツチング液中の塩酸濃度を直接検出し、これにより
液組成の濃度を管理制御する方法を見出した。
In order to eliminate the above-mentioned variations in etching speed and to perform etching with high precision, the inventors of the present invention have conducted various studies on methods for controlling the composition and concentration of the etching solution, and have directly detected the concentration of hydrochloric acid in the etching solution. Through this, we discovered a method to manage and control the concentration of liquid composition.

すなわち、本発明は、塩化銅エツチング液に塩酸及び過
酸化水素を添加して再生するtこ踪し、エツチング槽、
検出槽、杓生槽等を備えたエツチング装置からエツチン
グ液の一部を系外に抜き出し該液を水またはアルカリ水
で稀釈し、該液の塩酸濃度を連続的又は間欠的に検知し
、予め設定された塩酸濃度範囲に対応してエツチング装
置の一部に水または塩酸を補充し、エツチング液中の塩
酸濃度を制御することを特徴とするエツチング液の制御
管理方法である。
That is, the present invention involves adding hydrochloric acid and hydrogen peroxide to a copper chloride etching solution to regenerate it.
A portion of the etching solution is extracted from the etching device equipped with a detection tank, a ladle tank, etc., the solution is diluted with water or alkaline water, and the hydrochloric acid concentration of the solution is detected continuously or intermittently. This method of controlling and managing an etching solution is characterized in that the concentration of hydrochloric acid in the etching solution is controlled by replenishing a part of the etching apparatus with water or hydrochloric acid in accordance with a set hydrochloric acid concentration range.

本発明の方法tこより、エツチング液中の塩酸濃度のバ
ラツキが少なくなり過酸化水素と塩酸とのバランスを一
定に保持することができ、安定したエツチングを長期間
にわたって行なうことができる。
According to the method of the present invention, variations in the concentration of hydrochloric acid in the etching solution are reduced, the balance between hydrogen peroxide and hydrochloric acid can be maintained constant, and stable etching can be performed over a long period of time.

本発明方法においてDH計の指示により応答、制御する
場合は、通猟エツチング液中のHCp濃度が1〜6モル
/4であること及びpH計の特f1を考慮してぷ釈倍率
は2〜200倍、好ましくは5〜100倍である。これ
によって測定治中のpHを±0.03以内tこ粘さえ、
またサンプリング誤差を±5%以内におさえる事ができ
、エツチング液中のHC−eI11度を設定値の±5%
以内で管理することが可能である。
In the method of the present invention, when responding and controlling according to the instructions from the DH meter, the dilution magnification should be 2 to 2, taking into account that the HCp concentration in the hunting etching solution is 1 to 6 mol/4 and the characteristic f1 of the pH meter. 200 times, preferably 5 to 100 times. This ensures that the pH during measurement is within ±0.03.
In addition, the sampling error can be kept within ±5%, and the HC-eI 11 degrees in the etching solution can be kept within ±5% of the set value.
It is possible to manage within

一方滴定法tこよる場合は、回分操作によるアルカリの
サンプリング誤差及び滴定誤差の総和を±596#こお
さえてエツチング液中のHC−g 濃度を設定値の±5
%以内で管理することができ温度に設定して行っても適
用することが出来るが、検出液の温度変化による誤差を
減少させるためには温度補償電極や恒温槽を用いる事に
より一定の温度条件として測定することが好ましい。滴
定法には、たとえばpH計を用いる電位差滴定、又はサ
ーミスタを用いる温度滴定などが適用できる。
On the other hand, if the titration method is not suitable, the HC-g concentration in the etching solution can be adjusted to ±5 of the set value by controlling the sum of alkali sampling errors and titration errors due to batch operations to ±596#.
% and can be applied even if the temperature is set, but in order to reduce errors due to temperature changes in the detection liquid, it is necessary to maintain constant temperature conditions by using a temperature compensation electrode or a constant temperature bath. It is preferable to measure as . For example, potentiometric titration using a pH meter or temperature titration using a thermistor can be applied to the titration method.

希釈する液は水又はアルカリ水を用いる。アルカリ水は
カセイソーダ、カセイカリ、炭酸ソーダ等の0.01〜
i o o f/43の水溶液の一定濃度液が用いられ
る。
Water or alkaline water is used as the diluent. Alkaline water is from 0.01 to caustic soda, caustic potash, carbonated soda, etc.
A constant concentration aqueous solution of i o o f/43 is used.

アルカリ水溶液を用いると希釈計量槽やポンプ等の装置
が小型化でき、また希釈倍率も2〜50倍と低倍率にす
ることができて、サンプリング誤差及び測定誤差を小さ
くすることができるO 滴定に用いるアルカリは、カセイソーダ、カセイカリ、
炭酸ソーダ等の10〜200 fl/−8の水溶液の一
定濃度液が用いられる。
When using an alkaline aqueous solution, equipment such as dilution measuring tanks and pumps can be made smaller, and the dilution ratio can be as low as 2 to 50 times, reducing sampling errors and measurement errors. The alkali used is caustic soda, caustic potash,
A constant concentration solution of 10 to 200 fl/-8 of an aqueous solution such as soda carbonate is used.

エツチング液の塩酸濃度を検出する場所は、エツチング
槽から排出され、再生槽−こ入るまで、あるいは再生槽
からエツチング槽重こ入るまでのいずれの場所でもよい
。エツチング液の老化状態を適格に検出するにはエツチ
ング槽から排出されて来る液を検出するのが好ましく、
エツチングに好適な塩酸濃度を微調整する場合は再生槽
からエツチング槽に入るまでの過程で検出するのが好ま
しい。エツチング槽から排出され再生槽に入るまでの液
の濃度を検出する場合は連続的tこ行なえるが、再生槽
からエツチング槽に入るまでの過程で検出する場合は検
出すべき液中1こ過酸化水素が相当に含まれ−ているこ
とがら気泡が発生し、サンプリング誤差が生じ易いので
、たとえば30ppm  を超える過酸化水素が存在す
る場合は間欠的に検出する様1こするのが好ましい。
The hydrochloric acid concentration of the etching solution may be detected at any location from the time it is discharged from the etching tank until it enters the regeneration tank, or from the regeneration tank until it enters the etching tank. In order to properly detect the aging state of the etching solution, it is preferable to detect the solution discharged from the etching tank.
When finely adjusting the hydrochloric acid concentration suitable for etching, it is preferable to detect it during the process from the regeneration tank to the etching tank. When detecting the concentration of the liquid from the etching tank until it enters the regeneration tank, it can be carried out continuously, but when detecting it during the process from the regeneration tank to the etching tank, it is possible to detect the concentration of the liquid in the liquid to be detected. Since a considerable amount of hydrogen oxide is contained, air bubbles are generated and sampling errors are likely to occur. Therefore, if hydrogen peroxide in excess of 30 ppm is present, it is preferable to perform one scrubbing so as to detect it intermittently.

また温度滴定を行なう場合tこけエツチング槽と再生槽
の中間のエツチング槽から排出される液を検出する。補
充用の塩酸を話加する場所もエツチング装置のいずれで
もよいが、一般的には再生槽あるいtまエツチング槽に
添加される。
In addition, when performing temperature titration, the liquid discharged from the etching tank located between the moss etching tank and the regeneration tank is detected. Hydrochloric acid for replenishment may be added to any part of the etching apparatus, but it is generally added to the regeneration tank or the etching tank.

本発明の方法を実施する場合、具体的には、pH値又は
電位値の指示又は滴定値に応答して自動的に塩酸槽から
エツチング液に塩酸が所定音添加される杼に、電磁弁、
室部ポンプ、タイマーjcどを作動させる方式がとられ
るなど自動なお本発明の方法は、従来のORP計や、定
電位電解計、比色計で塩化第1銅濃度を検知して、過酸
化水素を補充する際tこ過酸化水素補充量と比例させて
一定量の塩酸を補充せしめる方法に加えて本発明の方法
により微調察知の塩酸と水を補充せしめることができる
。また過酸化水素の補充をORP計や定電位電解計、比
色計で行い、塩酸の補充は別に本発明の方法で行うこと
も可能である。
When carrying out the method of the present invention, specifically, a solenoid valve is installed in a shuttle in which hydrochloric acid is automatically added at a predetermined sound from a hydrochloric acid bath to an etching solution in response to an indication of a pH value or a potential value or a titration value.
The automatic method of the present invention, which operates a chamber pump, a timer, etc., detects the cuprous chloride concentration using a conventional ORP meter, potentiostatic electrometer, or colorimeter, and detects peroxide. When replenishing hydrogen, in addition to the method of replenishing a fixed amount of hydrochloric acid in proportion to the amount of hydrogen peroxide replenishment, the method of the present invention allows replenishment of finely controlled amounts of hydrochloric acid and water. It is also possible to replenish hydrogen peroxide using an ORP meter, potentiostatic electrometer, or colorimeter, and to replenish hydrochloric acid separately using the method of the present invention.

以上、未発明の方法によれば、塩化銅エツチング・液中
の塩化第二銅、塩化第一銅、及び過酸化水素濃度の影響
な受けることなく直接に塩酸濃度のみを精度よく検出、
制御し均一なエツチングを行わせることができる。
As described above, according to the uninvented method, only the concentration of hydrochloric acid can be directly and accurately detected without being affected by the concentrations of cupric chloride, cuprous chloride, and hydrogen peroxide in the copper chloride etching solution.
Controlled and uniform etching can be achieved.

次に本発明の方法を実施例により説明する。Next, the method of the present invention will be explained using examples.

実施例 1 CuC−g22モル/4、CuC,80、01(−ル/
13、H(13モル/13の組成からなるエツチング液
を循環使用し、再生槽を備えたスプレー型エツチングマ
シン(保有エツチング液t36o4.循埠11400A
/分)においてpH電極(対照、補償も含む)、攪拌装
置及び希釈用液と原液挿入口を配した10OatのpH
測定槽に、エツチング液の循環路の一部tこ設けたバイ
パスから2*//minの流量でエツチング液を連続的
1こ抜き出し、希釈用水道水をi30mt/minの流
tで同時に連続的にpH測定槽に供給する。
Example 1 CuC-g22mol/4, CuC,80,01(-ru/
13, H (a spray-type etching machine that circulates and uses an etching solution with a composition of 13 mol/13 and is equipped with a regeneration tank (equipped with etching solution t36o4. Circulation port 11400A)
/min) with a pH electrode (including control and compensation), a stirring device, and a diluent and stock solution inlet at a pH of 10 Oat.
The etching solution was continuously drawn out at a flow rate of 2*//min from a bypass provided in a part of the etching solution circulation path in the measuring tank, and at the same time, tap water for dilution was continuously drawn out at a flow rate of 30 mt/min. Then, supply it to the pH measuring tank.

(なお運転前に電極の校正及び既知濃度のエツチング液
を流してpH計の校正をしておいた)。
(Before operation, the electrodes were calibrated and the pH meter was calibrated by flowing an etching solution with a known concentration.)

pH計の出力を液pHとして1.30±0.02でコン
トロールされるようにpHメーターと補充液挿入電磁弁
が連動するようtこした装置を用いて片面フェノール樹
脂銅張積層板(Cu箔35μm11)(計 800m2
)のエツチングを50℃±1℃、スプレー圧 1.3k
F!%フンペアスピード 4m/分で8−Hrかけて行
なった。
A single-sided phenolic resin copper-clad laminate (Cu foil) was prepared using a device that was constructed so that the pH meter and the replenisher insertion solenoid valve were linked so that the pH of the liquid was controlled at 1.30±0.02 using the output of the pH meter. 35μm11) (Total 800m2
) etching at 50℃±1℃, spray pressure 1.3k
F! The test was carried out at a speed of 4 m/min for 8 hours.

この結果pHfli”動は少なく均一なエツチング速度
が((!られ、エツチング不良は全く起とらなかつた。
As a result, the pH fluctuation was small and the etching rate was uniform ((!), and no etching defects occurred at all.

この場合の液中の塩酸濃度及びpHの経時変化を第1図
に示す。
Figure 1 shows the changes over time in the hydrochloric acid concentration and pH in the solution in this case.

なお比較のため従来方法による検出法での塩酸の濃度変
化を併記した。
For comparison, changes in the concentration of hydrochloric acid in the conventional detection method are also shown.

実施例 2 実施例1と同様な組成のエツチング液を用いたエツチン
グマシンにおいて循環するエツチング液の一部を間欠的
に4紅/回抜き出し、これを150mgの水で混合希釈
しpHを測定し、実施例1と同様に検知されたpH指示
値に基づき塩酸又は水を供給する電磁弁を作動させ塩酸
または水を補充した。間欠的な抜き出しは1サイクル5
分で行なった。この制御方法1こよって実施例1と同一
条件で銅張積層板(計 8021112)のエツチング
を8Hrおこなったが廖酸濃度のバラツキは設定値の±
496であり、一定したエツチング仕上りが行なえた。
Example 2 A part of the etching solution circulating in an etching machine using an etching solution having the same composition as in Example 1 was intermittently extracted 4 times, mixed and diluted with 150 mg of water, and the pH was measured. Similar to Example 1, a solenoid valve for supplying hydrochloric acid or water was operated based on the detected pH indication value to replenish hydrochloric acid or water. Intermittent extraction is 1 cycle 5
I did it in minutes. According to this control method 1, copper-clad laminates (8021112 in total) were etched for 8 hours under the same conditions as in Example 1, but the variation in hydrochloric acid concentration was within ± of the set value.
496, and a consistent etching finish was achieved.

実施例 3 実施例1と同一組成のエツチング液を用い、エツチング
槽、再生槽を備えエツチング液が循環するエツチングマ
シンにおいて循環スるエツチング液を間欠的に4#j/
回抜き出し、これに1s omtrrNaOH水を添加
混合、希釈しpHを測定した。pllの設定値を4 、
−0 (HC−gの中和点)としそれ以上の場合、補充
用水槽に設けた電磁弁を開口し、逆に4.0以下の場合
補充用塩酸槽の電磁弁を開口する様にした。この制御方
法tこよって銅張積層板(t1801m2 )のエツチ
ングを8Hrおこなったが塩酸濃度のバラツギは設定値
の±396以内であり一定したエツチングを行なうこと
ができた。
Example 3 Using an etching solution having the same composition as in Example 1, in an etching machine equipped with an etching tank and a regeneration tank and in which the etching solution circulates, the circulating etching solution was intermittently 4#j/
The solution was extracted twice, mixed with 1 somtrr NaOH water, diluted, and the pH was measured. Set the pll setting value to 4,
-0 (neutralization point of HC-g), and when it is higher than that, the solenoid valve installed in the replenishment water tank is opened, and conversely, when it is 4.0 or less, the solenoid valve of the replenishment hydrochloric acid tank is opened. . Using this control method, a copper-clad laminate (t1801m2) was etched for 8 hours, and the variation in hydrochloric acid concentration was within ±396 of the set value, making it possible to perform consistent etching.

実施例 4 実施例1と同一組成のエツチング液からなり、実施例1
におけると同様のエツチングマシンにおいて間欠的にエ
ツチング液を5 tnl抜き出し、%規定のKOH水溶
液を用い、サーミスタを用いた温度滴定装置で滴定した
。設定値以上の測定値になった時補充する水槽、の電磁
弁が開となる様に、逆に設定値以下になった時補充する
塩酸槽の電磁弁が開とt「る様シこした。この制御方法
を用いて、銅張t#層板(計 802m2)のエツチン
グを8Hrおこなったが塩[1度のバラツキは設定値の
±5%以内であり一定したエツチングがおこなえた。
Example 4 Consisting of an etching solution with the same composition as Example 1,
5 tnl of the etching solution was intermittently extracted from an etching machine similar to that used in , and titrated with a KOH aqueous solution of % standard using a temperature titration device using a thermistor. Just as the solenoid valve for the water tank that is refilled opens when the measured value exceeds the set value, the solenoid valve for the hydrochloric acid tank that refills opens when the measured value falls below the set value. Using this control method, a copper-clad T# layer board (802 m2 in total) was etched for 8 hours, and the one-degree variation was within ±5% of the set value, and consistent etching was achieved.

比較例 1 実施例1と同一組成からなるエツチング液を循環使用す
る従来のエツチングマシン(ORP計及び比重計制御方
式)において実施例1と同一条件で−張り積層板(計 
795m2)のエツチングを8Hrおこなった。
Comparative Example 1 A conventional etching machine (ORP meter and hydrometer control system) that circulated an etching solution having the same composition as in Example 1 was used under the same conditions as in Example 1.
795 m2) was etched for 8 hours.

3Hr経過した所で塩酸濃度は2.6モル/刃となりエ
ツチング不足が生じ始めた。H2O2濃度検知による補
充液の過酸化水素と塩酸とのf比を1対2.4から1対
2.8へ変えてエツチングを行ったところ7Hr経過し
た所でオーバーエツチングが生じ始めた。8Hr運転後
の塩酸濃度を測定した所4.1モル/看もあった。
After 3 hours had passed, the hydrochloric acid concentration reached 2.6 mol/blade, and etching began to become insufficient. When etching was carried out by changing the f ratio of hydrogen peroxide to hydrochloric acid in the replenisher from 1:2.4 to 1:2.8 based on H2O2 concentration detection, over-etching began to occur after 7 hours had passed. When the hydrochloric acid concentration was measured after 8 hours of operation, it was found to be 4.1 mol/min.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、エツチング液中の塩酸濃度及びpHの経時変
化を示す。1は本発明方誌により制御した場合の塩酸の
濃度変化を示t12は従来方法による場合の塩酸の濃度
変化を示す。 特¥[出願人  三菱瓦斯化学株式会社代表者 長野和
書 @ト+嶽衆奄C蝉漬◆1呵霞璽
FIG. 1 shows changes over time in the hydrochloric acid concentration and pH in the etching solution. 1 shows the change in the concentration of hydrochloric acid when controlled by the method of the present invention, and t12 shows the change in the concentration of hydrochloric acid when controlled by the conventional method. Special ¥ [Applicant Mitsubishi Gas Chemical Co., Ltd. Representative Nagano Washo @ To + Takeshuyu C Semizuke ◆ 1 2 Kasui

Claims (1)

【特許請求の範囲】[Claims] 塩化銅エツチング液に塩酸及−び過酸化水素を添加して
再生するに際し、エツチング槽、検出槽、再生槽等を備
えたエツチング装置からエツチング液の一部を系外に抜
き出し該液を水またはアルカリ水で稀釈し、該液の塩酸
濃度を連続的又は間欠的に検知し、予め設定された塩酸
濃度範囲に対応してエツチング装置の一部に水または塩
酸を補充し、エツチング液中の塩酸濃度を制御すること
を特徴とするエツチング液の制御管理方法。
When regenerating a copper chloride etching solution by adding hydrochloric acid and hydrogen peroxide, a part of the etching solution is extracted from the etching system, which is equipped with an etching tank, a detection tank, a regeneration tank, etc., and the solution is mixed with water or water. The etching solution is diluted with alkaline water, the hydrochloric acid concentration of the solution is detected continuously or intermittently, and a part of the etching apparatus is replenished with water or hydrochloric acid according to the preset hydrochloric acid concentration range. A method for controlling and managing an etching solution, characterized by controlling the concentration.
JP10924782A 1982-06-25 1982-06-25 Controlling and administering method of etching solution Granted JPS591679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10924782A JPS591679A (en) 1982-06-25 1982-06-25 Controlling and administering method of etching solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10924782A JPS591679A (en) 1982-06-25 1982-06-25 Controlling and administering method of etching solution

Publications (2)

Publication Number Publication Date
JPS591679A true JPS591679A (en) 1984-01-07
JPH0158270B2 JPH0158270B2 (en) 1989-12-11

Family

ID=14505338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10924782A Granted JPS591679A (en) 1982-06-25 1982-06-25 Controlling and administering method of etching solution

Country Status (1)

Country Link
JP (1) JPS591679A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144499U (en) * 1984-08-22 1986-03-24 株式会社タダノ Operation control device for bending and stretching mechanism
JPS6159300U (en) * 1984-09-25 1986-04-21
JPS61217500A (en) * 1985-03-22 1986-09-27 新明和工業株式会社 Controller for operation of service car
JPS6462483A (en) * 1987-08-28 1989-03-08 Ibm Regeneration of metal-containing acidic solution
EP0342669A2 (en) * 1988-05-20 1989-11-23 Mitsubishi Gas Chemical Company, Inc. Method for preparing thin copper foil-clad substrate for circuit boards
JPH0665763A (en) * 1992-08-21 1994-03-08 Tsurumi Soda Co Ltd Device for treating waste etching liquid
JPH08269747A (en) * 1995-03-31 1996-10-15 Nippon Aqua Kk Method for regenerating liquid etchant and liquid etchant
JP2011522395A (en) * 2008-01-11 2011-07-28 ピーピージー インダストリーズ オハイオ, インコーポレイテッド Circuit board having electrodeposition coating on conductive core in via and method of making the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144499U (en) * 1984-08-22 1986-03-24 株式会社タダノ Operation control device for bending and stretching mechanism
JPS6159300U (en) * 1984-09-25 1986-04-21
JPS61217500A (en) * 1985-03-22 1986-09-27 新明和工業株式会社 Controller for operation of service car
JPS6462483A (en) * 1987-08-28 1989-03-08 Ibm Regeneration of metal-containing acidic solution
EP0342669A2 (en) * 1988-05-20 1989-11-23 Mitsubishi Gas Chemical Company, Inc. Method for preparing thin copper foil-clad substrate for circuit boards
JPH0665763A (en) * 1992-08-21 1994-03-08 Tsurumi Soda Co Ltd Device for treating waste etching liquid
JPH08269747A (en) * 1995-03-31 1996-10-15 Nippon Aqua Kk Method for regenerating liquid etchant and liquid etchant
JP3597250B2 (en) * 1995-03-31 2004-12-02 日本アクア株式会社 Etching solution regeneration method and etching solution regeneration device
JP2011522395A (en) * 2008-01-11 2011-07-28 ピーピージー インダストリーズ オハイオ, インコーポレイテッド Circuit board having electrodeposition coating on conductive core in via and method of making the same

Also Published As

Publication number Publication date
JPH0158270B2 (en) 1989-12-11

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