JPH0158270B2 - - Google Patents

Info

Publication number
JPH0158270B2
JPH0158270B2 JP10924782A JP10924782A JPH0158270B2 JP H0158270 B2 JPH0158270 B2 JP H0158270B2 JP 10924782 A JP10924782 A JP 10924782A JP 10924782 A JP10924782 A JP 10924782A JP H0158270 B2 JPH0158270 B2 JP H0158270B2
Authority
JP
Japan
Prior art keywords
etching
hydrochloric acid
concentration
etching solution
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10924782A
Other languages
Japanese (ja)
Other versions
JPS591679A (en
Inventor
Ryozo Kawai
Jun Kokubu
Yoshiji Namikawa
Yutaka Oshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Priority to JP10924782A priority Critical patent/JPS591679A/en
Publication of JPS591679A publication Critical patent/JPS591679A/en
Publication of JPH0158270B2 publication Critical patent/JPH0158270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means

Description

【発明の詳細な説明】 本発明は塩化銅エツチング液の制御管理方法に
関し、銅張り積層板などを能率よくかつ精度高く
エツチングを行なうことができる様にエツチング
液を効果的に制御、管理する方法に係る。
[Detailed Description of the Invention] The present invention relates to a method for controlling and managing a copper chloride etching solution, and a method for effectively controlling and managing an etching solution so that copper-clad laminates and the like can be etched efficiently and with high precision. Pertains to.

従来、銅及び銅合金をエツチングする際、エツ
チング液として塩化第二銅溶液が使用されること
はよく知られている。該エツチング液によりエツ
チングを行う際、エツチング速度の急激な変化を
起させることなく、エツチング液の液組成濃度を
一定に保つて、エツチング速度の急激な変化を起
させないようにすることが重要である。このエツ
チング速度を急激に変化させる因子は、液中の塩
化第一銅濃度、塩化第二銅濃度、塩酸濃度及び過
酸化水素濃度である。
It is well known that a cupric chloride solution is used as an etching solution when etching copper and copper alloys. When performing etching with the etching solution, it is important to keep the composition and concentration of the etching solution constant without causing sudden changes in the etching rate, so as to prevent sudden changes in the etching rate. . Factors that rapidly change the etching rate are the cuprous chloride concentration, cupric chloride concentration, hydrochloric acid concentration, and hydrogen peroxide concentration in the solution.

従来、これらの濃度を制御する方法として、塩
化第一銅の濃度は、ORP計、定電位電解計、比
色計で検出し、過酸化水素及び再生理論量の塩酸
を過酸化水素補充量と比例させて直接エツチング
槽又は再生槽のエツチング液に補充し、また、塩
化第二銅の濃度は比重計で検出し、水または塩酸
を補充することにより一般に制御されていた。こ
の様に従来は液中の塩化第一銅及び塩化第二銅の
濃度のみを検出する方法で制御、管理されてい
た。
Conventionally, as a method to control these concentrations, the concentration of cuprous chloride was detected using an ORP meter, potentiostatic electrometer, or colorimeter, and the hydrogen peroxide and the regenerated theoretical amount of hydrochloric acid were mixed with the hydrogen peroxide replenishment amount. It was proportionally replenished directly into the etching bath or regeneration bath etching solution, and the concentration of cupric chloride was detected with a hydrometer and generally controlled by replenishing water or hydrochloric acid. In this way, conventionally, the concentration of cuprous chloride and cupric chloride in the liquid has been controlled and managed by a method that detects only the concentration.

しかしながらこの様な制御、管理方法ではエツ
チング液中の塩酸濃度が直接検出されず、補充さ
れる過酸化水素と塩酸とのバランスがくずれ易
く、一定した塩酸濃度が得難く、このため一定の
精度を保つてエツチングすることが出来難い欠点
があつた。特に近年、エツチング速度を高め、生
産性を上げる必要から遊離塩酸濃度を2〜6モ
ル/程度の高塩酸濃度として使用されることが
多い。たとえばプリント回路基板等の処理量、回
路パターンの密度などが変動すると副反応の空気
酸化による塩酸の消費割合が変化し、浴の塩酸濃
度が変化するためで、たとえば高濃度塩酸浴で
は、塩酸が2.5モル/から4.5モル/まで変動
するとエツチング速度は28μm/分から50μm/分
まで変動する。このように塩酸濃度の変化による
エツチング速度のバラツキが激しく、大きな問題
となつて来ている。
However, with such control and management methods, the concentration of hydrochloric acid in the etching solution cannot be directly detected, and the balance between the hydrogen peroxide and hydrochloric acid that is replenished is likely to be lost, making it difficult to obtain a constant concentration of hydrochloric acid. It had the disadvantage that it was difficult to maintain and etch it. Particularly in recent years, a high concentration of free hydrochloric acid of about 2 to 6 moles/h is often used because of the need to increase the etching rate and productivity. For example, if the amount of processed printed circuit boards or the density of circuit patterns changes, the rate of consumption of hydrochloric acid due to air oxidation as a side reaction changes, and the concentration of hydrochloric acid in the bath changes.For example, in a high concentration hydrochloric acid bath, hydrochloric acid Varying from 2.5 mol/min to 4.5 mol/min, the etching rate varies from 28 μm/min to 50 μm/min. As described above, the etching rate varies greatly due to changes in the hydrochloric acid concentration, and this is becoming a major problem.

本発明者らは、上記した如きのエツチング速度
のバラツキをなくし、精度よくエツチングするた
めにエツチング液の液組成濃度の管理制御方法に
ついて種々検討を重ね、エツチング液中の塩酸濃
度を直接検出し、これにより液組成の濃度を管理
制御する方法を見出した。
In order to eliminate the above-mentioned variations in etching speed and perform etching with high precision, the present inventors have conducted various studies on methods of controlling the composition and concentration of the etching solution, and directly detected the concentration of hydrochloric acid in the etching solution. Through this, we discovered a method to manage and control the concentration of the liquid composition.

すなわち、本発明は、塩化銅エツチング液に塩
酸及び過酸化水素を添加して再生するに際し、エ
ツチング槽、検出槽、再生槽等を備えたエツチン
グ装置からエツチング液の一部を系外に抜き出し
該液を水またはアルカリ水で稀釈し、該液の塩酸
濃度を連続的又は間欠的に検知し、予め設定され
た塩酸濃度範囲に対応してエツチング装置の一部
に水または塩酸を補充し、エツチング液中の塩酸
濃度を制御することを特徴とするエツチング液の
制御管理方法である。
That is, in the present invention, when regenerating a copper chloride etching solution by adding hydrochloric acid and hydrogen peroxide, a part of the etching solution is extracted outside the system from an etching apparatus equipped with an etching tank, a detection tank, a regeneration tank, etc. The solution is diluted with water or alkaline water, the hydrochloric acid concentration of the solution is detected continuously or intermittently, and a part of the etching device is replenished with water or hydrochloric acid according to the preset hydrochloric acid concentration range, and etching is performed. This is a method for controlling and managing an etching solution, which is characterized by controlling the concentration of hydrochloric acid in the solution.

本発明の方法により、エツチング液中の塩酸濃
度のバラツキが少なくなり過酸化水素と塩酸との
バランスを一定に保持することができ、安定した
エツチングを長期間にわたつて行なうことができ
る。
According to the method of the present invention, variations in the concentration of hydrochloric acid in the etching solution are reduced, the balance between hydrogen peroxide and hydrochloric acid can be maintained constant, and stable etching can be performed over a long period of time.

本発明方法においてPH計の指示により応答、制
御する場合は、通常エツチング液中のHCl濃度が
1〜6モル/であること及びPH計の特性を考慮
して希釈倍率は2〜200倍、好ましくは5〜100倍
である。これによつて測定液中のPHを±0.03以内
におさえ、またサンプリング誤差を±5%以内に
おさえる事ができ、エツチング液中のHCl濃度を
設定値の±5%以内で管理することが可能であ
る。
In the method of the present invention, when responding and controlling based on the instructions of a PH meter, the dilution ratio is preferably 2 to 200 times, taking into account that the HCl concentration in the etching solution is usually 1 to 6 mol/cm and the characteristics of the PH meter. is 5 to 100 times larger. This makes it possible to keep the pH in the measurement solution within ±0.03, and the sampling error within ±5%, making it possible to control the HCl concentration in the etching solution within ±5% of the set value. It is.

一方滴定法による場合は、回分操作によるアル
カリのサンプリング誤差及び滴定誤差の総和を±
5%におさえてエツチング液中のHCl濃度を設定
値の±5%以内で管理することができる。またPH
メータ、滴定装置等の特性から測定温度は5〜60
℃での温度範囲であればどの温度に設定して行つ
ても適用することが出来るが、検出液の温度変化
による誤差を減少させるためには温度補償電極や
恒温槽を用いる事により一定の温度条件として測
定することが好ましい。滴定法には、たとえばPH
計を用いる電位差滴定、又はサーミスタを用いる
温度滴定などが適用できる。
On the other hand, when using the titration method, the sum of the alkali sampling error and titration error due to batch operation is ±
By suppressing the concentration to 5%, the HCl concentration in the etching solution can be controlled within ±5% of the set value. Also PH
Due to the characteristics of the meter, titration device, etc., the measurement temperature is 5 to 60.
It can be applied at any temperature within the temperature range of °C, but in order to reduce errors due to temperature changes in the detection liquid, use a temperature compensation electrode or a constant temperature bath to maintain a constant temperature. It is preferable to measure as a condition. Titration methods include, for example, PH
Potentiometric titration using a meter or temperature titration using a thermistor can be applied.

希釈する液は水又はアルカリ水を用いる。アル
カリ水はカセイソーダ、カセイカリ、炭酸ソーダ
等の0.01〜100g/の水溶液の一定濃度液が用い
られる。
Water or alkaline water is used as the diluent. As the alkaline water, an aqueous solution of 0.01 to 100 g of caustic soda, caustic potash, soda carbonate, etc. at a constant concentration is used.

アルカリ水溶液を用いると希釈計量槽やポンプ
等の装置が小型化でき、また希釈倍率も2〜50倍
と低倍率にすることができて、サンプリング誤差
及び測定誤差を小さくすることができる。
By using an alkaline aqueous solution, devices such as a dilution measuring tank and a pump can be downsized, and the dilution ratio can be as low as 2 to 50 times, making it possible to reduce sampling errors and measurement errors.

滴定に用いるアルカリは、カセイソーダ、カセ
イカリ、炭酸ソーダ等の10〜200g/の水溶液の
一定濃度液が用いられる。
The alkali used in the titration is a fixed concentration aqueous solution of 10 to 200 g/ml of caustic soda, caustic potash, soda carbonate, etc.

エツチング液の塩酸濃度を検出する場所は、エ
ツチング槽から排出され、再生槽に入るまで、あ
るいは再生槽からエツチング槽に入るまでのいず
れの場所でもよい。エツチング液の老化状能を適
格に検出するにはエツチング槽から排出されて来
る液を検出するのが好ましく、エツチングに好適
な塩酸濃度を微調整する場合は再生槽からエツチ
ング槽に入るまでの過程で検出するのが好まし
い。エツチング槽から排出され再生槽に入るまで
の液の濃度を検出する場合は連続的に行なえる
が、再生槽からエツチング槽に入るまでの過程で
検出する場合は検出すべき液中に過酸化水素が相
当に含まれていることから気泡が発生し、サンプ
リング誤差が生じ易いので、たとえば30ppmを超
える過酸化水素が存在する場合は間欠的に検出す
る様にするのが好ましい。
The hydrochloric acid concentration of the etching solution may be detected at any point from the time it is discharged from the etching tank until it enters the regeneration tank, or from the regeneration tank until it enters the etching tank. In order to accurately detect the aging state of the etching solution, it is preferable to detect the solution discharged from the etching tank, and when finely adjusting the hydrochloric acid concentration suitable for etching, the process from the regeneration tank to the etching tank is detected. It is preferable to detect at When detecting the concentration of the liquid discharged from the etching tank until it enters the regeneration tank, it can be carried out continuously, but when detecting it during the process from the regeneration tank to the etching tank, there is hydrogen peroxide in the liquid to be detected. Since a considerable amount of hydrogen peroxide is contained, bubbles are generated and sampling errors are likely to occur. Therefore, for example, if hydrogen peroxide exceeding 30 ppm is present, it is preferable to detect it intermittently.

また温度滴定を行なう場合にはエツチング槽と
再生槽の中間のエツチング槽から排出される液を
検出する。補充用の塩酸を添加する場所もエツチ
ング装置のいずれでもよいが、一般的には再生槽
あるいはエツチング槽に添加される。
When temperature titration is performed, the liquid discharged from the etching tank located between the etching tank and the regeneration tank is detected. Hydrochloric acid for replenishment may be added to any part of the etching apparatus, but it is generally added to the regeneration tank or the etching tank.

本発明の方法を実施する場合、具体的には、PH
値又は電位値の指示又は滴定値に応答して自動的
に塩酸槽からエツチング液に塩酸が所定量添加さ
れる様に、電磁弁、定量ポンプ、タイマーなどを
作動させる方式がとられるなど自動制御すること
ができる。
When carrying out the method of the present invention, specifically, PH
Automatic control such as operating a solenoid valve, metering pump, timer, etc. so that a predetermined amount of hydrochloric acid is automatically added from the hydrochloric acid tank to the etching solution in response to an indication of a value or potential value or a titration value. can do.

なお本発明の方法は、従来のORP計や、定電
位電解計、比色計で塩化第1銅濃度を検知して、
過酸化水素を補充する際に過酸化水素補充量と比
例させて一定量の塩酸を補充せしめる方法に加え
て本発明の方法により微調整量の塩酸と水を補充
せしめることができる。また過酸化水素の補充を
ORP計や定電位電解計、比色計で行い、塩酸の
補充は別に本発明の方法で行うことも可能であ
る。
The method of the present invention detects the cuprous chloride concentration using a conventional ORP meter, potentiostatic electrometer, or colorimeter.
When replenishing hydrogen peroxide, in addition to the method of replenishing a fixed amount of hydrochloric acid in proportion to the amount of hydrogen peroxide replenishment, the method of the present invention allows replenishment of finely adjusted amounts of hydrochloric acid and water. Also, replenish hydrogen peroxide.
It is also possible to carry out using an ORP meter, potentiostatic electrolyzer, or colorimeter, and to supplement hydrochloric acid separately by the method of the present invention.

以上、本発明の方法によれば、塩化銅エツチン
グ液中の塩化第二銅、塩化第一銅、及び過酸化水
素濃度の影響を受けることなく直接に塩酸濃度の
みを精度よく検出、制御し均一なエツチングを行
わせることができる。
As described above, according to the method of the present invention, only the concentration of hydrochloric acid can be accurately detected and controlled directly without being affected by the concentrations of cupric chloride, cuprous chloride, and hydrogen peroxide in the copper chloride etching solution. Etching can be carried out.

次に本発明の方法を実施例により説明する。 Next, the method of the present invention will be explained using examples.

実施例 1 CuCl22モル/、CuCl0.01モル/、HCl3モ
ル/の組成からなるエツチング液を循環使用
し、再生槽を備えたスプレー型エツチングマシン
(保有エツチング液量360、循環量400/分)
においてPH電極(対照、補償も含む)、撹拌装置
及び希釈用液と原液挿入口を配した100mlのPH測
定槽に、エツチング液の循環路の一部に設けたバ
イパスから2ml/minの流量でエツチング液を連
続的に抜き出し、希釈用水道水を130ml/minの
流量で同時に連続的にPH測定槽に供給する。(な
お運転前に電極の校正及び既知濃度のエツチング
液を流してPH計の校正をしておいた)。PH計の出
力を液PHとして1.30±0.02でコントロールされる
ようにPHメーターと補充液挿入電磁弁が連動する
ようにした装置を用いて片面フエノール樹脂銅張
積層板(Cu箔35μm)(計800m2)のエツチングを
50℃±1℃、スプレー圧1.3Kg、コンベアスピー
ド4m/分で8Hrかけて行なつた。この結果PH変
動は少なく均一なエツチング速度が得られ、エツ
チング不良は全く起こらなかつた。この場合の液
中の塩酸濃度及びPHの経時変化を第1図に示す。
Example 1 A spray-type etching machine equipped with a regeneration tank that circulates an etching solution with a composition of CuCl 2 2 mol/, CuCl 0.01 mol/, and HCl 3 mol/min (equipment of etching solution 360, circulation rate 400/min). )
A 100 ml PH measurement tank equipped with a PH electrode (including control and compensation), a stirrer, and a diluent and stock solution inlet was heated at a flow rate of 2 ml/min from a bypass installed in a part of the etching solution circulation path. The etching solution is continuously extracted, and tap water for dilution is simultaneously continuously supplied to the PH measurement tank at a flow rate of 130 ml/min. (Before operation, the electrodes were calibrated and the PH meter was calibrated by flowing an etching solution with a known concentration.) One-sided phenolic resin copper-clad laminate (Cu foil 35 μm) (total 800 m 2 ) Etching
The spraying was carried out for 8 hours at 50°C±1°C, a spray pressure of 1.3 kg, and a conveyor speed of 4 m/min. As a result, a uniform etching rate was obtained with little pH variation, and no etching defects occurred at all. Figure 1 shows the changes over time in the hydrochloric acid concentration and pH in the solution in this case.

なお比較のため従来方法による検出法での塩酸
の濃度変化を併記した。
For comparison, changes in the concentration of hydrochloric acid in the conventional detection method are also shown.

実施例 2 実施例1と同様な組成のエツチング液を用いた
エツチングマシンにおいて循環するエツチング液
の一部を間欠的に4ml/回抜き出し、これを150
mlの水で混合希釈しPHを測定し、実施例1と同様
に検知されたPH指示値に基づき塩酸又は水を供給
する電磁弁を作動させ塩酸または水を補充した。
間欠的な抜き出しは1サイクル5分で行なつた。
この制御方法によつて実施例1と同一条件で銅張
積層板(計802m2)のエツチングを8Hrおこなつ
たが塩酸濃度のバラツキは設定値の±4%であ
り、一定したエツチング仕上りが行なえた。
Example 2 A portion of the etching solution circulating in an etching machine using an etching solution having the same composition as in Example 1 was intermittently drawn out 4 ml/time,
The mixture was mixed and diluted with 1 ml of water, the pH was measured, and the electromagnetic valve for supplying hydrochloric acid or water was operated based on the detected PH value in the same manner as in Example 1 to replenish the solution with hydrochloric acid or water.
Intermittent withdrawals were performed for 5 minutes per cycle.
Using this control method, a copper-clad laminate (802 m 2 in total) was etched for 8 hours under the same conditions as in Example 1, but the variation in hydrochloric acid concentration was ±4% of the set value, and a consistent etching finish could not be achieved. Ta.

実施例 3 実施例1と同一組成のエツチング液を用い、エ
ツチング槽、再生槽を備えエツチング液が循環す
るエツチングマシンにおいて循環するエツチング
液を間欠的に4ml/回抜き出し、これに150mlの
NaOH水を添加混合、希釈しPHを測定した。PH
の設定値を4.0(HClの中和点)としそれ以上の場
合、補充用水槽に設けた電磁弁を開口し、逆に
4.0以下の場合補充用塩酸槽の電磁弁を開口する
様にした。この制御方法によつて銅張積層板(計
801m2)のエツチングを8Hrおこなつたが塩酸濃
度のバラツキは設定値の±3%以内であり一定し
たエツチングを行なうことができた。
Example 3 Using an etching solution with the same composition as in Example 1, an etching machine equipped with an etching tank and a regeneration tank and in which the etching solution circulates, the circulating etching solution was intermittently drawn out 4 ml/time, and 150 ml of the etching solution was intermittently drawn out.
NaOH water was added, mixed and diluted, and the pH was measured. PH
The set value is set to 4.0 (HCl neutralization point), and if the value is higher than that, the solenoid valve installed in the replenishment water tank is opened and reversed.
The solenoid valve of the replenishment hydrochloric acid tank is opened when the value is below 4.0. This control method makes it possible to
Etching of 801 m 2 ) was carried out for 8 hours, and the variation in hydrochloric acid concentration was within ±3% of the set value, making it possible to perform consistent etching.

実施例 4 実施例1と同一組成のエツチング液からなり、
実施例1におけると同様のエツチングマシンにお
いて間欠的にエツチング液を5ml抜き出し、1/2
規定のKOH水溶液を用い、サーミスタを用いた
温度滴定装置で滴定した。設定値以上の測定値に
なつた時補充する水槽の電磁弁が開となる様に、
逆に設定値以下になつた時補充する塩酸槽の電磁
弁が開となる様にした。この制御方法を用いて、
銅張積層板(計802m2)のエツチングを8Hrおこ
なつたが塩酸濃度のバラツキは設定値の±5%以
内であり一定したエツチングがおこなえた。
Example 4 Consisting of an etching solution with the same composition as Example 1,
Using the same etching machine as in Example 1, 5 ml of etching solution was intermittently drawn out, and 1/2
Titration was carried out using a temperature titration device using a thermistor using a specified KOH aqueous solution. So that the solenoid valve of the water tank to be refilled will open when the measured value exceeds the set value.
Conversely, the solenoid valve for the hydrochloric acid tank that is refilled is opened when the level falls below the set value. Using this control method,
Etching of a copper-clad laminate (802 m 2 in total) was carried out for 8 hours, and the variation in hydrochloric acid concentration was within ±5% of the set value, and consistent etching was achieved.

比較例 1 実施例1と同一組成からなるエツチング液を循
環使用する従来のエツチングマシン(ORP計及
び比重計制御方式)において実施例1と同一条件
で銅張り積層板(計795m2)のエツチングを8Hr
おこなつた。
Comparative Example 1 A copper-clad laminate (795 m 2 in total) was etched under the same conditions as in Example 1 using a conventional etching machine (ORP meter and hydrometer control system) that circulated an etching solution with the same composition as in Example 1. 8 hours
I did it.

3Hr経過した所で塩酸濃度は2.6モル/とな
りエツチング不足が生じ始めた。H2O2濃度検知
による補充液の過酸化水素と塩酸との量比を1対
2.4から1対2.8へ変えてエツチングを行つたとこ
ろ7Hr経過した所でオーバーエツチングが生じ始
めた。8Hr運転後の塩酸濃度を装定した所4.1モ
ル/もあつた。
After 3 hours, the hydrochloric acid concentration reached 2.6 mol/min, and etching began to become insufficient. The ratio of hydrogen peroxide and hydrochloric acid in the replenishment solution is set to 1:1 by H 2 O 2 concentration detection.
When etching was performed by changing the ratio from 2.4 to 1:2.8, over-etching began to occur after 7 hours. After 8 hours of operation, the concentration of hydrochloric acid was 4.1 mol/.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、エツチング液中の塩酸濃度及びPHの
経時変化を示す。1は本発明方法により制御した
場合の塩酸の濃度変化を示し、2は従来方法によ
る場合の塩酸の濃度変化を示す。
FIG. 1 shows changes over time in the hydrochloric acid concentration and pH in the etching solution. 1 shows the change in the concentration of hydrochloric acid when controlled by the method of the present invention, and 2 shows the change in the concentration of hydrochloric acid when controlled by the conventional method.

Claims (1)

【特許請求の範囲】[Claims] 1 塩化銅エツチング液に塩酸及び過酸化水素を
添加して再生するに際し、エツチング槽、検出
槽、再生槽等を備えたエツチング装置からエツチ
ング液の一部を系外に抜き出し該液を水またはア
ルカリ水で稀釈し、該液の塩酸濃度を連続的又は
間欠的に検知し、予め設定された塩酸濃度範囲に
対応してエツチング装置の一部に水または塩酸を
補充し、エツチング液中の塩酸濃度を制御するこ
とを特徴とするエツチング液の制御管理方法。
1. When regenerating copper chloride etching solution by adding hydrochloric acid and hydrogen peroxide, a part of the etching solution is extracted from the etching device equipped with an etching tank, a detection tank, a regeneration tank, etc., and the solution is replaced with water or an alkali. The etching solution is diluted with water, the hydrochloric acid concentration in the etching solution is detected continuously or intermittently, water or hydrochloric acid is replenished into a part of the etching device according to the preset hydrochloric acid concentration range, and the hydrochloric acid concentration in the etching solution is measured. A method for controlling and managing an etching solution, characterized by controlling:
JP10924782A 1982-06-25 1982-06-25 Controlling and administering method of etching solution Granted JPS591679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10924782A JPS591679A (en) 1982-06-25 1982-06-25 Controlling and administering method of etching solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10924782A JPS591679A (en) 1982-06-25 1982-06-25 Controlling and administering method of etching solution

Publications (2)

Publication Number Publication Date
JPS591679A JPS591679A (en) 1984-01-07
JPH0158270B2 true JPH0158270B2 (en) 1989-12-11

Family

ID=14505338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10924782A Granted JPS591679A (en) 1982-06-25 1982-06-25 Controlling and administering method of etching solution

Country Status (1)

Country Link
JP (1) JPS591679A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144499U (en) * 1984-08-22 1986-03-24 株式会社タダノ Operation control device for bending and stretching mechanism
JPS6159300U (en) * 1984-09-25 1986-04-21
JPS61217500A (en) * 1985-03-22 1986-09-27 新明和工業株式会社 Controller for operation of service car
US5013395A (en) * 1987-08-28 1991-05-07 International Business Machines Corporation Continuous regeneration of acid solution
EP0342669B1 (en) * 1988-05-20 1995-08-23 Mitsubishi Gas Chemical Company, Inc. Method for preparing thin copper foil-clad substrate for circuit boards
JP2976319B2 (en) * 1992-08-21 1999-11-10 鶴見曹達株式会社 Etching waste liquid treatment equipment
JP3597250B2 (en) * 1995-03-31 2004-12-02 日本アクア株式会社 Etching solution regeneration method and etching solution regeneration device
US7743494B2 (en) * 2008-01-11 2010-06-29 Ppg Industries Ohio, Inc. Process of fabricating a circuit board

Also Published As

Publication number Publication date
JPS591679A (en) 1984-01-07

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