JPS5916406B2 - Semiconductor supporting electrode plate - Google Patents

Semiconductor supporting electrode plate

Info

Publication number
JPS5916406B2
JPS5916406B2 JP11080A JP11080A JPS5916406B2 JP S5916406 B2 JPS5916406 B2 JP S5916406B2 JP 11080 A JP11080 A JP 11080A JP 11080 A JP11080 A JP 11080A JP S5916406 B2 JPS5916406 B2 JP S5916406B2
Authority
JP
Japan
Prior art keywords
electrode plate
supporting electrode
carbon fiber
ring
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11080A
Other languages
Japanese (ja)
Other versions
JPS5698834A (en
Inventor
英夫 荒川
啓一 国谷
孝 滑川
正文 大橋
正広 合田
恒男 吉成
仁 大貫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11080A priority Critical patent/JPS5916406B2/en
Publication of JPS5698834A publication Critical patent/JPS5698834A/en
Publication of JPS5916406B2 publication Critical patent/JPS5916406B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • H01L23/4924Bases or plates or solder therefor characterised by the materials
    • H01L23/4928Bases or plates or solder therefor characterised by the materials the materials containing carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Description

【発明の詳細な説明】 本発明は、半導体支持電極板に係り、特に銅一炭素せん
い複合材よりなる支持電極板に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor supporting electrode plate, and particularly to a supporting electrode plate made of a copper-carbon fiber composite material.

半導体装置は、少なくとも1個のpn接合を有する半導
体基体と該半導体基体を支持する支持電’0 極板とを
有する。支持電極板に要求される性質は、主として熱伝
導率及び導電率が高いことと、半導体基体と同等もしく
はほぼ等しい熱膨張係数を有することである。
The semiconductor device includes a semiconductor substrate having at least one pn junction and a support electrode plate supporting the semiconductor substrate. The properties required of the supporting electrode plate are mainly that it has high thermal conductivity and electrical conductivity, and that it has a coefficient of thermal expansion that is equal or approximately equal to that of the semiconductor substrate.

5 半導体基体として一般に用いられているシリコンは
、熱膨張係数が約3.5×16−6/℃であり、これの
支持電極板材料としては、従来、タングステン或はモリ
ブデンが用いられてきた。
5. Silicon, which is commonly used as a semiconductor substrate, has a coefficient of thermal expansion of about 3.5 x 16-6/°C, and tungsten or molybdenum has conventionally been used as the material for supporting electrode plates.

しかし、タングステン或はモリブデンとても、必ずしも
最’0 良のものではない。これらの熱膨張係数は4.
5〜5.5×10−6/℃の範囲にあり、一般の導電材
料たとえば銅、銀、アルミニウムなどにくらぺればシリ
コンの熱膨張係数に大部近いものの、またシリコンとは
かなりの開きがある。i5タングステン或はモリブデン
に代るものとして、最近、銅−炭素せんい複合材よりな
る支持電極板が見出された。
However, tungsten or molybdenum are not necessarily the best. Their coefficient of thermal expansion is 4.
The coefficient of thermal expansion is in the range of 5 to 5.5 x 10-6/°C, and although it is close to the thermal expansion coefficient of silicon compared to general conductive materials such as copper, silver, and aluminum, it is also quite different from silicon. be. Support electrode plates made of copper-carbon fiber composites have recently been discovered as an alternative to i5 tungsten or molybdenum.

この支持電極板は、炭素せんいの量及び配列を変えるこ
とによつて熱膨張係数及び導電率を調整することができ
る。又、タングステン及びモリブデンよりも高導電率で
かつ低熱膨張係数にすることが可能である。前記銅一炭
素せんい複合材よりなる支持電極板は、たとえば銅めつ
きした直径数μmの炭素せんいを数千本束ねて心棒に何
層にも巻付け、ホツトプレスすることによつて製造する
ことができる。
The thermal expansion coefficient and electrical conductivity of this supporting electrode plate can be adjusted by changing the amount and arrangement of carbon fibers. Further, it can be made to have higher electrical conductivity and lower coefficient of thermal expansion than tungsten and molybdenum. The supporting electrode plate made of the copper-carbon fiber composite material can be manufactured by, for example, bundling several thousand copper-plated carbon fibers with a diameter of several μm, wrapping them around a mandrel in many layers, and hot pressing. can.

ホツトプレスされた前記炭素せんいの束はうず巻き状と
なつて存在し、又、束と束の界面は銅めつき同志が溶着
して一体化したものとなる。一連の研究で、炭素せんい
の配列の仕方は、半導体基体が円板の場合はうず巻き又
は複数個の同心円状の環がよいということがわかつてき
た。銅一炭素せんい複合材よりなる従来の支持電極板は
、うず又は環の内外輪ともに同ピ炭素量である。
The bundle of hot-pressed carbon fibers exists in a spiral shape, and the copper-plated comrades are welded and integrated at the interface between the bundles. Through a series of studies, it has been found that when the semiconductor substrate is a disk, it is best to arrange the carbon fibers in a spiral pattern or in a plurality of concentric rings. In a conventional supporting electrode plate made of a copper-carbon fiber composite material, both the inner and outer rings of the spiral or ring have the same pi carbon content.

なお、以下、環という場合には特別に指示しないかぎり
うず巻きも含めることにする。しかしながら、銅一炭素
せんい複合材よりなる支持電極板は、複合材の製作時に
炭素せんい束の配列の乱れが生じやすく、このため、支
持電極板の半径方向の熱膨張係数が測定位置によつてば
らつきやすかつた。
Note that in the following, when we refer to a ring, we also include a spiral unless otherwise specified. However, in a supporting electrode plate made of a copper-carbon fiber composite material, the arrangement of carbon fiber bundles is likely to be disordered during manufacture of the composite material, and as a result, the radial coefficient of thermal expansion of the supporting electrode plate may vary depending on the measurement position. It was easy to vary.

本発明の目的は、銅一炭素せんい複合材よりなる支持電
極板の半径方向における熱膨張係数のばらつきを抑制す
るのに好適な構造を提供するにある。
An object of the present invention is to provide a structure suitable for suppressing variations in the coefficient of thermal expansion in the radial direction of a supporting electrode plate made of a copper-carbon fiber composite material.

本発明は、炭素せんい束を環状に配置した銅一炭素せん
い複合材よりなる支持電極板において、前記環の最外輪
が最内輪よりも高炭素濃度を有するようにしたものであ
る。
The present invention provides a supporting electrode plate made of a copper-carbon fiber composite material in which carbon fiber bundles are arranged in a ring, in which the outermost ring of the ring has a higher carbon concentration than the innermost ring.

本発明は、炭素せんい量が環の内外輪とも同じである従
来の支持電極板について下記の点を究明し、その結果、
発明に至つたものである。
The present invention has investigated the following points regarding the conventional supporting electrode plate in which the amount of carbon shedding is the same for both the inner and outer rings of the ring, and as a result,
This led to the invention.

(1)炭素せんい束の配列の乱れは、外輪になるはど少
ない。
(1) Disturbances in the arrangement of carbon fiber bundles are rare in the outer ring.

(2)炭素せんい量の多いものの方が、少ないものより
も一般に配列の乱れが少ない。
(2) Those with a large amount of carbon fiber generally have less disordered arrangement than those with a small amount of carbon.

(3)半径方向における熱膨張係数のばらつきは、外輪
の配列の乱れによつて、殆ど決まるといつてよい以上の
ことから、炭素せんいの束でできた環の炭素濃度を内輪
ど外輪とで変え、外輪を多くすることによつて外輪の配
列の乱れを少なくしたものである。
(3) Since it can be said that the variation in the coefficient of thermal expansion in the radial direction is mostly determined by the disorder in the arrangement of the outer ring, the carbon concentration of the ring made of a bundle of carbon fibers can be determined by comparing the inner ring and the outer ring. By changing the number of outer rings and increasing the number of outer rings, the disorder in the arrangement of the outer rings is reduced.

本発明において、炭素せんい束の環は、最外輪が最内輪
よりも炭素量が多ければ、一応、目的を達することがで
きる。
In the present invention, as long as the outermost ring of the carbon fiber bundle ring has a larger carbon content than the innermost ring, the purpose can be achieved.

しかし、望ましくは、内輪から外輪に向けて、連続的又
は断続的に炭素量を多くすべきである。このようにすれ
ば、環の配列の乱れを外輪に行くにしたがつて少なくす
ることができ、支持電極板の半径方向における熱膨張係
数のばらつき即ち異方性を抑制する効果を高めることが
できる。銅被覆した炭素せんい束をうず巻状に配置して
支持電極板を製造する方法において、最外輪の部分を形
成するに当つては、炭素量が45〜60体積%の前記銅
付きせんい束を巻くのが望ましい。
However, desirably, the carbon content should be increased continuously or intermittently from the inner ring to the outer ring. In this way, the disorder in the arrangement of the rings can be reduced toward the outer ring, and the effect of suppressing variations in the coefficient of thermal expansion in the radial direction of the supporting electrode plate, that is, anisotropy, can be enhanced. . In a method of manufacturing a support electrode plate by arranging copper-coated carbon fiber bundles in a spiral shape, when forming the outermost ring part, the copper-covered fiber bundles having a carbon content of 45 to 60% by volume are used. It is preferable to wrap it.

又、より好適には、銅付き炭素せんい束の炭素量が60
体積%をこえないものを用いてすべての環を形成すべき
である。炭素量が60体積%をこえるとホツトブレス加
工が困難となり、炭素せんいの束と束の間にボードが発
生して、熱伝導性及び導電性が悪くなる。炭素量が45
体積%より少ないと、環の配列が乱れ、環の形状が波を
打つようになる。本発明によれば、支持電極板全体とし
ては従来のものよりも炭素せんいの量を減らしながら、
なおかつ熱膨張係数のばらつきを抑制することができる
More preferably, the carbon content of the copper-coated carbon fiber bundle is 60
All rings should be formed using no more than vol%. If the carbon content exceeds 60% by volume, hot-pressing becomes difficult, and boards occur between bundles of carbon fibers, resulting in poor thermal conductivity and electrical conductivity. Carbon content is 45
If it is less than % by volume, the arrangement of the rings becomes disordered and the shape of the rings becomes wavy. According to the present invention, while reducing the amount of carbon fiber in the supporting electrode plate as a whole compared to the conventional one,
Furthermore, variations in the coefficient of thermal expansion can be suppressed.

このため、従来のものよりも熱伝導率を高めることがで
きる。又、支持電極板の中心部分の熱伝導性を他の部分
にくらぺて高めることが可能である。第1図は、銅一炭
素せんい複合材よりなる支持電極板1における理想的な
炭素せんい束の配列状態を示した平面図である。
Therefore, thermal conductivity can be increased compared to conventional ones. Furthermore, it is possible to increase the thermal conductivity of the central portion of the supporting electrode plate compared to other portions. FIG. 1 is a plan view showing an ideal arrangement of carbon fiber bundles in a supporting electrode plate 1 made of a copper-carbon fiber composite material.

炭素せんい束2は、既に述べたように直径数μmの炭素
せんいを数千本束ねたものからなる。3は銅である。
As already mentioned, the carbon fiber bundle 2 is made up of several thousand carbon fibers each having a diameter of several μm. 3 is copper.

この支持電極板1は、炭素せんい束2の配列に乱れがな
いため、X方向及びY方向とも同等の熱膨張係数を有す
る。第2図は、炭素せんい束2の配列に乱れが生じてい
るものを示している。
This supporting electrode plate 1 has the same coefficient of thermal expansion in both the X direction and the Y direction because the arrangement of the carbon fiber bundles 2 is not disordered. FIG. 2 shows a case where the arrangement of carbon fiber bundles 2 is disordered.

この場合には、支持電極板1の半径方向の熱膨張係数が
、測定位置によつてことごとく異なつてしまう。このよ
うに、熱膨張係数にばらつきがある支持電極板を用いる
と、半導体装置のヒートサイクル特性、熱疲労特性が著
しく劣化する。比較例 6〜9μm径の炭素せんいに約1μmの銅めつきを施し
たものを6000本束ね、銅粉とメチルセルロース水溶
液とを混合したスラリ中を通過させて、炭素せんい量が
53体積%からなる銅一炭素せんい複合材のワイヤを得
た。
In this case, the radial thermal expansion coefficient of the supporting electrode plate 1 will vary depending on the measurement position. As described above, when a supporting electrode plate having a variation in thermal expansion coefficient is used, the heat cycle characteristics and thermal fatigue characteristics of the semiconductor device are significantly deteriorated. Comparative Example 6,000 carbon fibers with a diameter of 6 to 9 μm and copper plating of approximately 1 μm were bundled and passed through a slurry containing copper powder and an aqueous methyl cellulose solution, so that the amount of carbon fibers was 53% by volume. A copper-carbon fiber composite wire was obtained.

この複合材のワイヤを直径3r!r!nφのステンレス
棒にうず巻き状に巻き、そのまま350〜400℃で1
時間、水素中で加熱して仮焼結した。仮焼結体の寸法は
、直径35mφ、厚さ120wr!nであつた。次いで
、ステンレス棒を抜き、抜き穴に銅粉をつめた後、黒鉛
鋳型内に設置し、ホツトプレスした。ホツトプレスの条
件は、温度850〜1000℃、保持時間1時間、圧力
2501Cf/Cr!i及び水素雰囲気とした。ホツト
プレス後の厚さは約30mn1直径は35r1r1nφ
であり、厚さが約1/4に収縮した。これから直径32
mφ、厚さ3rfr1nの支持電極板を4個採取した。
炭素せんい束の配列状態はいずれも第2図に示すように
乱れており、直径方向における熱膨張係数は3.6〜7
.3X10″6/℃の範囲内で大きくばらついていた。
実施例 比較例とはぼ同じ製造法によつて、炭素せんい量がうず
巻きO内輪から外輪に行くにしたがつて多くなつている
2種類の支持電極板を製造した。
This composite wire has a diameter of 3r! r! Wrap it in a spiral shape around an nφ stainless steel rod and heat it at 350 to 400℃ for 1 hour.
Temporary sintering was performed by heating in hydrogen for an hour. The dimensions of the temporary sintered body are 35 mφ in diameter and 120 wr in thickness! It was n. Next, the stainless steel rod was pulled out, the hole was filled with copper powder, and the rod was placed in a graphite mold and hot pressed. The hot press conditions were: temperature 850-1000°C, holding time 1 hour, pressure 2501Cf/Cr! i and hydrogen atmosphere. Thickness after hot pressing is approximately 30mm 1 diameter is 35r1r1nφ
The thickness was shrunk to about 1/4. From now on, the diameter is 32
Four supporting electrode plates each having a diameter of mφ and a thickness of 3 rfr1n were collected.
The arrangement of carbon fiber bundles is disordered as shown in Figure 2, and the coefficient of thermal expansion in the diametrical direction is 3.6 to 7.
.. It varied widely within the range of 3×10″6/°C.
Two types of supporting electrode plates in which the amount of carbon shedding increases from the inner ring to the outer ring of the spiral O were manufactured using the same manufacturing method as in the Examples and Comparative Examples.

炭素せんい束のうずは、1つが4重巻き、他の1つが7
重巻きである。外輪の炭素量は、2種類とも53体積%
とし、内側に行くにしたがつて7体積%ずつ減らした。
炭素量の減量方法は銅めつき量及びスラリー中の銅粉の
量を減らすことにより行つた。このほかに炭素せんいの
本数を変えてもよい。炭素せんい束のうずとうずとの間
隙は、4重巻きは約4!Frlnl7重巻きは約2.3
瀾とした。製造した支持電極板は、いずれも電極板の中
心近傍の炭素せんいが若干、波状に変形していたが、外
輪近傍は比較的同心のうずであつた。これら支持電極板
の半径方向の熱膨張係数は、いずれも3.6〜4.4X
10−6/℃の間にあり、前記比較例に示したものより
もばらつきが少なく、かつ熱膨張係数の値も低いことが
確認された。導電率は、4重巻きのものが45〜551
ACS%、7重巻きのものが50〜551ACS%であ
つた。
One of the spirals of the carbon fiber bundle has 4 windings, and the other has 7 windings.
It is heavily rolled. The carbon content of the outer ring is 53% by volume for both types.
The amount was decreased by 7% by volume toward the inside.
The amount of carbon was reduced by reducing the amount of copper plating and the amount of copper powder in the slurry. In addition to this, the number of carbon fibers may be changed. The gap between the spirals of the carbon fiber bundle is approximately 4 for a quadruple winding! Frlnl 7-fold roll is approximately 2.3
I was disappointed. In all of the manufactured supporting electrode plates, the carbon fibers near the center of the electrode plate were slightly deformed into a wave-like shape, but the area near the outer ring was a relatively concentric undulation. The radial thermal expansion coefficients of these supporting electrode plates are all 3.6 to 4.4X.
It was confirmed that the coefficient of thermal expansion was between 10-6/°C, had less variation, and had a lower coefficient of thermal expansion than that shown in the comparative example. The electrical conductivity is 45 to 551 for the 4-layered one.
The ACS% was 50 to 551 ACS% for the seven-fold roll.

以上の実施例から明らかなように、本発明によれば、銅
一炭素せんい複合材からなり、炭素せんいがうず巻き又
は環状に配置された支持電極板の熱膨張係数の異方性を
制御することができる。
As is clear from the above embodiments, according to the present invention, it is possible to control the anisotropy of the coefficient of thermal expansion of a support electrode plate made of a copper-carbon fiber composite material and in which carbon fibers are arranged in a spiral or annular manner. I can do it.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、銅一炭素せんい複合材からなる支持電極板の
好適な例を示す平面図、第2図は、前記支持電極板の好
ましくない例を示す平面図である。 11・・・・・・支持電極板、2・・・・・・炭素せん
い束、3・・・・・爛。
FIG. 1 is a plan view showing a preferred example of a supporting electrode plate made of a copper-carbon fiber composite material, and FIG. 2 is a plan view showing an unfavorable example of the supporting electrode plate. 11... Support electrode plate, 2... Carbon fiber bundle, 3... Erosion.

Claims (1)

【特許請求の範囲】 1 銅又は銅合金中に炭素せんい束の環が同心円状に複
数個配置されたものからなる半導体支持電極板において
、前記環の最外輪が最内輪にくらべて高炭素濃度を有す
ることを特徴とする半導体支持電極板。 2 特許請求の範囲第1項において、前記環の内輪から
外輪に向けて連続的又は断続的に高炭素濃度になつてい
ることを特徴とする半導体支持電極板。 3 特許請求の範囲第1項において、前記最外輪の炭素
せんい束の本数が最内輪の炭素せんい束の本数よりも多
いことを特徴とする半導体支持電極板。 4 特許請求の範囲第1項において、前記複数の環がう
ず巻になつていることを特徴とする半導体支持電極板。
[Scope of Claims] 1. A semiconductor supporting electrode plate comprising a plurality of rings of carbon fiber bundles arranged concentrically in copper or a copper alloy, in which the outermost ring of the rings has a higher carbon concentration than the innermost ring. A semiconductor supporting electrode plate characterized by having: 2. The semiconductor supporting electrode plate according to claim 1, characterized in that the carbon concentration increases continuously or intermittently from the inner ring to the outer ring of the ring. 3. The semiconductor supporting electrode plate according to claim 1, wherein the number of carbon fiber bundles in the outermost ring is greater than the number of carbon fiber bundles in the innermost ring. 4. The semiconductor supporting electrode plate according to claim 1, wherein the plurality of rings are spirally wound.
JP11080A 1980-01-07 1980-01-07 Semiconductor supporting electrode plate Expired JPS5916406B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11080A JPS5916406B2 (en) 1980-01-07 1980-01-07 Semiconductor supporting electrode plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11080A JPS5916406B2 (en) 1980-01-07 1980-01-07 Semiconductor supporting electrode plate

Publications (2)

Publication Number Publication Date
JPS5698834A JPS5698834A (en) 1981-08-08
JPS5916406B2 true JPS5916406B2 (en) 1984-04-16

Family

ID=11464928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11080A Expired JPS5916406B2 (en) 1980-01-07 1980-01-07 Semiconductor supporting electrode plate

Country Status (1)

Country Link
JP (1) JPS5916406B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6395808U (en) * 1986-12-12 1988-06-21
JPH04367602A (en) * 1991-06-14 1992-12-18 Asahi Corp Lacing-up part structure of string shoe
JPH0560304U (en) * 1992-01-28 1993-08-10 株式会社アスティコ shoes

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7238427B2 (en) * 2004-11-02 2007-07-03 Solutia Incorporated Fire resistant polymer sheets

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6395808U (en) * 1986-12-12 1988-06-21
JPH04367602A (en) * 1991-06-14 1992-12-18 Asahi Corp Lacing-up part structure of string shoe
JPH0560304U (en) * 1992-01-28 1993-08-10 株式会社アスティコ shoes

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JPS5698834A (en) 1981-08-08

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