JPS59163743A - Ion source - Google Patents
Ion sourceInfo
- Publication number
- JPS59163743A JPS59163743A JP58036955A JP3695583A JPS59163743A JP S59163743 A JPS59163743 A JP S59163743A JP 58036955 A JP58036955 A JP 58036955A JP 3695583 A JP3695583 A JP 3695583A JP S59163743 A JPS59163743 A JP S59163743A
- Authority
- JP
- Japan
- Prior art keywords
- arc chamber
- area
- magnetic flux
- concentrating
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 24
- 239000003302 ferromagnetic material Substances 0.000 claims description 3
- 230000004907 flux Effects 0.000 abstract description 8
- 230000005294 ferromagnetic effect Effects 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 description 14
- 238000000605 extraction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置の製造過程で、半導体基板に不純物
イオンのfT込みなどに使用するイオン注入装置の注入
イオンを発生させるイオン源に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an ion source that generates implanted ions for an ion implantation device used for fT implantation of impurity ions into a semiconductor substrate during the manufacturing process of a semiconductor device.
上記のイオン源としては、普通、熱陰極型で、・この陰
極から放出された電子の飛しょう距離を長くしてイオン
化を容易にするための磁界を必要とするものが用いられ
る。このようなイオン源のうち、特に最近普及が進んで
いる高電流イオン源では、かなシ大きな磁場を必要とす
るが、イオン源と、このイオン源を収納するハウジング
の外形が大きくなシ、大きな磁場を形成するだめには大
きなソースマグネットを用いるが、大きなソースマグネ
ットの漏洩磁束は引出し電極系に影響を与えるので用法
が難しいという問題があった。The above-mentioned ion source is usually of the hot cathode type and requires a magnetic field to increase the flight distance of electrons emitted from the cathode and facilitate ionization. Among these ion sources, high-current ion sources, which have become popular recently, require a large magnetic field, but the ion source and the housing that houses the ion source have a large external shape. A large source magnet is used to form the magnetic field, but the leakage magnetic flux of the large source magnet affects the extraction electrode system, making it difficult to use.
本発明の目的は、上記の問題を解決したイオン源を提供
するにある。An object of the present invention is to provide an ion source that solves the above problems.
本発明のイオン源は、熱電子を放出する熱陰極およびイ
オン化ガスの導入口と発生イオンの引出口を有するアー
クチャンバと、このアークチャンバ内に磁場を形成する
だめのソースマグネットとを備えておシ、かつ、上記ア
ークチャンバの両端に、このアークチャンバ内に前記ソ
ースマグネットの形成する磁力線の集中を図るだめの、
前記アークチャンバに接する方の面積がその反対側の面
積よシ小さい強磁性体の磁束集中用部材が設けられてい
る構成を有する。The ion source of the present invention includes a hot cathode that emits thermionic electrons, an arc chamber having an ionized gas inlet and a generated ion outlet, and a source magnet that forms a magnetic field within the arc chamber. and, at both ends of the arc chamber, for the purpose of concentrating the lines of magnetic force formed by the source magnet in the arc chamber.
A magnetic flux concentrating member made of a ferromagnetic material is provided, the area of which is in contact with the arc chamber is smaller than the area of the opposite side.
つぎに本発明を実施例によシ説明する。Next, the present invention will be explained using examples.
第1図は本発明の一実施例の悦略の構成を示す断面図で
ある。図において、ソースマグネット1の磁路中にアー
クチャン只2が置かれている。アークチャンバ2の上下
壁のほぼ中央の間に絶縁してさし渡されている直線状の
熱陰極3は、陰極電源11からの供給電力で加熱され熱
電子を放出する。この電子はアーク電源12からの電圧
によりアークチャンバ2の外壁方向に向うと共にソース
マグネット1の作る磁界でサイクロトロン運動をして電
子飛しょう行程が長くなり、ガス導入口4から導入され
たガスと多く衝突してイオン化する。FIG. 1 is a sectional view showing the construction of an embodiment of the present invention. In the figure, an arc chamber 2 is placed in the magnetic path of a source magnet 1. A linear hot cathode 3, which is insulated and spanned between approximately the center of the upper and lower walls of the arc chamber 2, is heated by electric power supplied from a cathode power source 11 and emits thermoelectrons. These electrons move toward the outer wall of the arc chamber 2 due to the voltage from the arc power source 12, and undergo cyclotron motion due to the magnetic field created by the source magnet 1, resulting in a longer electron flight path and more energy than the gas introduced from the gas inlet 4. Collisions and ionization.
このようにして発生したイオンは、引出し電極(図示し
てない)の加速電界に引かれて引出し口5から所望する
方向に引出されるのであるが、本発明では特に、高圧電
源13により、例えば約80KVもの高電圧に保持され
るアークチャンバ2の上下両端外部に強磁性体の磁力線
集中用部材6が設けられている。集中用部材6はアーク
チャンバに接する面の方の面積が狭く反対側の面積の広
い、断面形状が梯形をなす形のもので、この強磁性部材
6がたいときは、アークチャンバく2の外部を通過して
しまう磁束が、部材6のあることによりアークチャンバ
2の内部を通るようになるので、従来のイオン源で得ら
れたよシも大きなアークチャンバ内磁束密度を得ること
ができる。また、従来の大形のソースマグネットに本発
明を適用して磁束密度に余裕が生じる場合は、従来よシ
も小形のソースマグネットで間に合うため、アークチャ
ンバ以外の部分に与える磁場の影響を小さくできると共
に、装置の小形化に役立ち、ひいては、装置の価格低減
効果も得られる。The ions generated in this way are drawn out from the extraction port 5 in a desired direction by being attracted by the accelerating electric field of an extraction electrode (not shown). Magnetic force line concentration members 6 made of ferromagnetic material are provided outside both upper and lower ends of the arc chamber 2, which is maintained at a high voltage of about 80 KV. The concentrating member 6 has a trapezoidal cross-section, with a narrow area on the side in contact with the arc chamber and a wide area on the opposite side. The presence of the member 6 causes the magnetic flux that would otherwise pass through the arc chamber 2 to pass through the interior of the arc chamber 2, making it possible to obtain a greater magnetic flux density within the arc chamber than that obtained with conventional ion sources. In addition, if the present invention is applied to a conventional large source magnet and there is a margin in magnetic flux density, a smaller source magnet can be used instead of the conventional one, so the influence of the magnetic field on parts other than the arc chamber can be reduced. At the same time, it is useful for downsizing the device, and as a result, the cost of the device can be reduced.
第1図は本発明の一実施例の概略断面図である。
1・・・・・・ソースマグネット、2・・・・・・アー
クチャンバ、3・・・・・・熱陰極、4・・・・・・ガ
ス導入口、5・・・・・・イオン引出し口、6・・・・
・・磁力線集中用強磁性体部材、11・・・・・・熱陰
極電源、12・・・・・・アーク電源、13・・・・・
・高圧電源。
代理人 弁理士 内 原 晋
乙9
〈コ
202−FIG. 1 is a schematic cross-sectional view of one embodiment of the present invention. 1... Source magnet, 2... Arc chamber, 3... Hot cathode, 4... Gas inlet, 5... Ion extraction Mouth, 6...
...Ferromagnetic member for concentrating magnetic lines of force, 11... Hot cathode power supply, 12... Arc power supply, 13...
・High voltage power supply. Agent Patent Attorney Shinotsu Uchihara 9〈ko202-
Claims (1)
ン源において、前記磁場の形成されるアークチャンバの
両端に、該アークチャンバに接する方の面積がその反対
側の面積よシ小さな形状の強磁性体の磁力線集中用部材
を設けたことを特徴とするイオン源。In a hot cathode ion source that requires a magnetic field from a source magnet, a ferromagnetic material whose area in contact with the arc chamber is smaller than that on the opposite side is placed at both ends of the arc chamber where the magnetic field is generated. An ion source characterized by being provided with a member for concentrating magnetic lines of force.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58036955A JPS59163743A (en) | 1983-03-07 | 1983-03-07 | Ion source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58036955A JPS59163743A (en) | 1983-03-07 | 1983-03-07 | Ion source |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59163743A true JPS59163743A (en) | 1984-09-14 |
Family
ID=12484162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58036955A Pending JPS59163743A (en) | 1983-03-07 | 1983-03-07 | Ion source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59163743A (en) |
-
1983
- 1983-03-07 JP JP58036955A patent/JPS59163743A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0184812B1 (en) | High frequency plasma generation apparatus | |
JPH11505058A (en) | Plasma accelerator with closed electron drift | |
EP0639939B1 (en) | Fast atom beam source | |
JPH04277500A (en) | Source of high speed atomic ray | |
JP3111851B2 (en) | High magnetic flux density ion source | |
JPS59163743A (en) | Ion source | |
JP3504290B2 (en) | Method and apparatus for generating low energy neutral particle beam | |
JPS6293834A (en) | Ion source | |
US4931698A (en) | Ion source | |
JPS5740845A (en) | Ion beam generator | |
US3914637A (en) | Method and apparatus for focusing an electron beam | |
JPH0692638B2 (en) | Thin film device | |
JP3213135B2 (en) | Fast atom beam source | |
JP2838738B2 (en) | Electron cyclotron resonance ion source | |
JPS62271334A (en) | Ion source for ion implantation device | |
JPH06140196A (en) | Pulse drawing type electron cyclotron resonance ion source | |
JP2627420B2 (en) | Fast atom beam source | |
JP3154018B2 (en) | Ion source | |
JPH01161699A (en) | High-speed atomic beam source | |
JP3341497B2 (en) | High frequency type charged particle accelerator | |
JP2989989B2 (en) | Ion generator | |
JPS617542A (en) | Microwave ion source | |
JPS6127053A (en) | Electron beam source | |
JPS63171954U (en) | ||
JPH06101394B2 (en) | Fast atom beam source |