JPS5916304A - Nonlinear resistor - Google Patents

Nonlinear resistor

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Publication number
JPS5916304A
JPS5916304A JP57124993A JP12499382A JPS5916304A JP S5916304 A JPS5916304 A JP S5916304A JP 57124993 A JP57124993 A JP 57124993A JP 12499382 A JP12499382 A JP 12499382A JP S5916304 A JPS5916304 A JP S5916304A
Authority
JP
Japan
Prior art keywords
oxide
melting point
resistance
resistance layer
low melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57124993A
Other languages
Japanese (ja)
Other versions
JPH0223004B2 (en
Inventor
東畑 孝二
網治 登
高橋 理吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57124993A priority Critical patent/JPS5916304A/en
Publication of JPS5916304A publication Critical patent/JPS5916304A/en
Publication of JPH0223004B2 publication Critical patent/JPH0223004B2/ja
Granted legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔発明の技術分野) 本発明は、特(−一気系統における過小用保護装置に使
用される非直線抵抗体に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a nonlinear resistor used in an undervoltage protection device, especially in a single-stroke system.

〔発明の技術的^′景と問題点〕[Technical outlook and problems of the invention]

電気系統(二おいて、正常な電圧に曳畳される]ノペ電
圧を除去し、′一気系統や屯気戦器を保睦するため、サ
ージアブソーバ及び避旧器などの過′Cにj七保護装置
が用いられる。
In order to remove the voltage from the electrical system (pulled to normal voltage) and to protect the ``air system'' and ``tankiki'', overload voltage such as surge absorbers and protectors should be installed. Seven protective devices are used.

この過′市用保綬装置には、正′1・6な′市川ではほ
ぼ絶縁特性を示し、過醸圧が印加されたとき(二は比較
的低抵抗値を二なる非11.線抵抗体が用いられる。
This overpressure protection device exhibits almost insulating properties for positive 1.6 wires, and when overpressure is applied (2 is a relatively low resistance value, 2 is a non-11 wire resistance The body is used.

非直線抵抗体は炭化けい素(Sin)若しくは酸化亜鉛
(ZnOJi二金属醒比物を混合した累月をプレスして
成形し、坑底して)4らオ℃る。
The nonlinear resistor is formed by pressing and molding a mixture of silicon carbide (Sin) or zinc oxide (ZnOJi bimetallic compound, and then deposited at the bottom of a mine) at 4°C.

ZnO系の非直線抵抗体は、小゛屯流域(二おける非直
m%性が急峻で、かつ、大喝流域(二到るまで鋭い立ち
上シをもつため、SiO系の非直線抵抗体を用、いた過
電圧保護装置よシもづぐれた過電圧保護装置を作ること
ができる。
ZnO-based nonlinear resistors have a steep non-linearity in the small region (2) and a sharp rise up to the large region (2), so SiO-based nonlinear resistors Using this, it is possible to create an overvoltage protection device that is more sophisticated than the existing overvoltage protection device.

このZnO系非直線抵抗体は、最中(二おいて使用する
と、非直線抵抗体側面の抵抗層が減少Jる。
When this ZnO-based nonlinear resistor is used in the middle, the resistance layer on the side surface of the nonlinear resistor decreases.

吏なわち、非11線指数αが著しく損われるという問題
があり、従来は非直線抵抗体の側1n1に硅酸亜鉛とア
ンチモン酸曲鉛を主成分とする商抵抗層を設けるか、ま
たは、さらにその−に(ニガラスノ1を設けることによ
シ、同t tUf、性の同上だけでなく、沿面閃絡の防
止も図っていた。
In other words, there is a problem that the non-linear index α is significantly impaired, and conventionally, a quotient resistance layer containing zinc silicate and curved lead antimonate as main components is provided on the side 1n1 of the non-linear resistor, or, Furthermore, by providing Nigarasu No. 1 (Nigarasuno 1), not only the same t tUf and the same as above, but also the prevention of creeping flash was attempted.

しかし、従来の非i11.7抵抗体は、尚抵抗増とガラ
ス層との密着性が7゛ヌいため(二、インパルスは斌が
低トしたり、低重流域に2けるリーク電流の請訓によシ
非直線性が悪いという欠点があった。
However, the conventional non-i11.7 resistor still has an increase in resistance and poor adhesion with the glass layer (2. Impulse has a low drop and a leakage current problem in a low overlap region). However, it had the disadvantage of poor nonlinearity.

〔発明の目的〕[Purpose of the invention]

本発明は、前記欠点(ニーみなされたもので、インパル
ス耐量及び非自線特性を向上させた非直線抵抗体を提供
するものである。
The present invention addresses the above-mentioned drawbacks (knees) and provides a non-linear resistor with improved impulse withstand capability and non-self-linear characteristics.

〔発明の実施例] 以下、本発明の一実施例を図面を参照して説明する。[Embodiments of the invention] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

Zn095.5モル% + B12o30.5モル% 
、 5b2(J++ 1.0モル% 、=NiO1,0
モル%、 Cr2O30,5モル% 、 Co2030
.5モル% + MnO20,5モル% + 5102
 u、sモル%  の割合で秤量しボールミルで混合す
る。このとき酸化物と有機結合剤例えばポリビニルアル
コールとを同時に混合する。このようにして得られた混
合物を乾燥造粒装懺例えばスプレードライヤーに入れ、
球状団粒にする。この粉末状混合物をプレス(二かけ、
例えば直径100朋、〕早さ2.5 mmの円板(−成
形する。一方、5i02 、5b203およびBi2O
+をモル比にして70対20 it 10の割合で混合
した酸化物ペーストを、前6己成形体の側面部分に塗布
し、例えば1200°C7:焼成する。このようにして
、件酸亜鉛(Zn25104)とアンチモンe+鉛(Z
n7Sb20I2)を主成分とする1へ抵抗層が形成さ
れた焼結体の側面に、低融点鉛ガラスフリツ)7L屯t
mJ、耐火性充填剤としてアルミナ、シリカおよび長石
をそれぞれ10車皐チの割合で混合した混合物スラリー
を塗布し、例えば500”Oて焼成し抵抗層を形成させ
る。その後、表面を何層した後、アルミニウム電極を溶
射して非直線抵抗体を形成する。
Zn095.5 mol% + B12o30.5 mol%
, 5b2(J++ 1.0 mol%, = NiO1,0
Mol%, Cr2O30.5mol%, Co2030
.. 5 mol% + MnO20.5 mol% + 5102
Weigh and mix in a ball mill at a ratio of u and s mol%. At this time, the oxide and an organic binder such as polyvinyl alcohol are mixed simultaneously. The mixture thus obtained is placed in a dry granulation oven, e.g. a spray dryer, and
Make into spherical particles. Press this powder mixture (two times,
For example, 5i02, 5b203 and Bi2O
An oxide paste mixed at a molar ratio of 70 to 20 is applied to the side surface of the former self-molded body, and fired at, for example, 1200°C. In this way, zinc oxide (Zn25104) and antimony e + lead (Z
On the side surface of the sintered body on which the resistance layer was formed, the main component of which was n7Sb20I2) was a low melting point lead glass frit.
mJ, a mixture slurry of alumina, silica and feldspar mixed at a ratio of 10 mJ each as a refractory filler is applied and fired at, for example, 500"O to form a resistance layer. After that, several layers are applied to the surface. , spray an aluminum electrode to form a non-linear resistor.

このようにして得られた非直線抵抗体の電気特性を第1
図及び第2図に示す。
The electrical characteristics of the nonlinear resistor obtained in this way are
As shown in Fig. and Fig. 2.

第1図はインパルス(4X10us)’4流を印加した
時の合格率を示したもので、第2図は電流特性を示した
ものである。各図において、実線A、破線Bは各々従来
及び本発明の非直線抵抗体の特性を示す。
Fig. 1 shows the pass rate when impulse (4 x 10 us)'4 current was applied, and Fig. 2 shows the current characteristics. In each figure, a solid line A and a broken line B indicate the characteristics of the conventional and inventive nonlinear resistors, respectively.

第1図及び第2図から明らかなように本発明の非直線抵
抗体は、従来の非直線抵抗体(=比べてインパルス1績
−及び非直線性が著しく改善されている。
As is clear from FIGS. 1 and 2, the nonlinear resistor of the present invention has significantly improved impulse performance and nonlinearity compared to the conventional nonlinear resistor.

本発明において、このような優れた特性が得られるのは
、低融点鉛ガラス中に1iltj火性充填剤を混合分散
させることにより、焼イテ]時に生じる酸化亜鉛粒子表
向の酸素イオンの減少を防ぎ、リーク電流を減少さ?、
非直線性を良くし、しかも、低融点鉛ガラスの比抵抗が
耐火性充填剤を加えること(二より、ガラスのみの比抵
抗よシも高くなり、インパルス耐量を向上させていると
考えられる。
In the present invention, such excellent properties are obtained because the reduction of oxygen ions on the surface of the zinc oxide particles that occurs during baking is reduced by mixing and dispersing the 1iltj pyrophoric filler in the low melting point lead glass. Prevent and reduce leakage current? ,
It is thought that adding a refractory filler improves the nonlinearity and also increases the specific resistance of the low-melting point lead glass (secondarily, the specific resistance of the glass alone is higher than that of glass alone, improving the impulse withstand capacity).

さらに、安価な耐火性充填剤を欧州するため、高価な低
融点鉛ガラスフリントのみを使用する場合に比較して、
コスト上においても南利である。
Furthermore, because of the use of inexpensive refractory fillers, compared to using only expensive low melting point lead glass flint,
It is also advantageous in terms of cost.

本発明において便用される低融点鉛ガラスフリットはP
bOが60〜950目、 SiO2が05〜10取量チ
、 B2O3が3〜20重量%訃よびA4oxがO20
)〜10重、駄チの範囲内で含有されたもの−Cある。
The low melting point lead glass frit conveniently used in the present invention is P
bO is 60 to 950, SiO2 is 05 to 10, B2O3 is 3 to 20% by weight, and A4ox is O20.
) to 10 weights, contained within the range of -C.

PilOが60LOよシも少なく、−チた5in2やA
4(Jaが10重量%、 B20yが2(11(i: 
% j ’)も多すさ′ると、ガラスの軟化点及び作業
諦度が高くなりずき、非直線性が悪くなるという欠点が
生じる。その理由は、焼付温度が850’O以上になる
と、Bi2O,の融点(約820’0)以上に温度を上
げること(二な9、非直線抵抗体中に含まれるBi2C
l3が円び変化を起こし、一度安定化した粒界層を乱す
ことになυ、第2図に示すような優れた非直線性は得ら
れない。一方PbOが95来M1%よpも多く、また5
102やAl2O3が0.5下、故係、 BtOsが3
里祇鵞よシも少な−すきると、ガラスの網目構1+、、
Lが崩れ、被橢膜に岨裂やはがれが生じ、第1図に示−
づような優れたインパルス耐振は得られない。
PilO is smaller than 60LO, -chita 5in2 and A
4 (Ja is 10% by weight, B20y is 2 (11 (i:
% j') increases, the softening point of the glass and the working tolerance increase, resulting in a disadvantage that nonlinearity worsens. The reason for this is that when the baking temperature exceeds 850'O, the temperature rises above the melting point of Bi2O (approximately 820'0) (Second 9, Bi2C contained in the nonlinear resistor).
If l3 causes a circular change and disturbs the once stabilized grain boundary layer υ, the excellent nonlinearity shown in FIG. 2 cannot be obtained. On the other hand, PbO has more p than M1% since 95, and 5
102 and Al2O3 are below 0.5, BtOs is 3
Satogi Goose is also small - If you like it, the glass mesh structure 1+...
L collapses, causing cracks and peeling in the epithelial membrane, as shown in Figure 1.
Excellent impulse vibration resistance cannot be obtained.

また、有効な低融点鉛ガラスフリットの含有率及び耐火
性充填剤の種類は、低融点鉛ガラスフリットが5〜95
重量%を占め、耐火性光憤剤はアルミナ、シリカ、マグ
ネシア、ジルコニア、ムライト。
In addition, the content of the effective low melting point lead glass frit and the type of refractory filler range from 5 to 95%.
The fire-retardant light agents that account for % by weight are alumina, silica, magnesia, zirconia, and mullite.

コーディエライト、長わ、タルク、才占土の少なくとも
いずれか一紬焦以上であることが確認された。
It was confirmed that at least one of cordierite, Nagawa, talc, and Saizando was more than one pongee.

不実〃1u例(−おい℃、非直線抵抗体の酸化亜鉛の含
廟率、釜属酸化物の組成及び含有率、高抵抗層を形成さ
ジー釜属酸化物のml成及び宮4イ率は前記実施例に限
定されるものではない。
Unrealistic 1U example (-Oi ℃, content rate of zinc oxide in non-linear resistor, composition and content rate of oxide, ml composition and rate of 4-I of oxide that forms a high resistance layer) is not limited to the above embodiments.

また、工程の条件も、削り己実Mqし11に限定される
ものではないことは勿fi6i1 (’ある。
Furthermore, it goes without saying that the conditions of the process are not limited to 11.

(発明の効果」 以上説明し7こ様に本つれ明(二よれば、1ンパルス耐
M、及び非直線特性を向上させた非直#i抵抗体ケ提供
できる。
(Effects of the Invention) According to the above-mentioned and seven-part method, it is possible to provide a non-linear #i resistor with improved one-pulse resistance M and non-linear characteristics.

【図面の簡単な説明】[Brief explanation of the drawing]

弔1図及び第2図は本発明の一実Ifii酉91に係る
非直)踪抵抗体のインパルス耐5 ’狛注j4図、及び
′重圧−゛屯流特性、腺図である。
Figures 1 and 2 are a diagram of the impulse resistance of a non-straight resistor according to IFII 91, which is a part of the present invention, and a diagram of the pressure-current characteristics.

Claims (3)

【特許請求の範囲】[Claims] (1)  ua化亜鉛を主成分とする;シを粘体の少な
くともその側面に絶縁;―を設けた非直線抵抗体(二お
いて、該絶縁層は硅酸亜鉛(Zn25104 )とアン
チモン酸亜鉛(Zn?5b2012)とを主成分とする
第1の抵抗層と、この第1の抵抗層上に設けられた35
0〜900’C+の軟化点を持つ低融魚船カラスフリッ
ト及び耐火性充填剤の(#、音物より生成された第2の
抵抗層から成ることを(:zf徴と4−る非1臼追ド抵
抗4V1【。
(1) A non-linear resistor whose main component is zinc chloride; insulated on at least the side surface of the viscous body; A first resistance layer containing Zn?5b2012) as a main component, and a
Consisting of a second resistance layer produced from a (#, sound material) of low-melting fish boat crow frit with a softening point of 0 to 900'C+ and a refractory filler (:zf characteristics and 4- Ursu resistance 4V1 [.
(2)低融点鉛ガラスフリットは、酸化鉛(PbO)を
60〜95 @ %:係、酸化硅素(SiOz)を0.
5〜10車量飴、酸化ホウ素(B203)を3〜20重
知:係、および酸化アルミニウム(Ax203 )を化
5〜10ボ漏、チ含有し、かつ低融点鉛ガラスフリット
が混合物の5〜95重祇チを占めることを特徴とする特
ff’F請求の範囲第1項記載の非直線抵抗体。
(2) Low melting point lead glass frit contains 60-95% lead oxide (PbO) and 0.0% silicon oxide (SiOz).
5 to 10 pieces of candy, boron oxide (B203), 3 to 20 parts, and aluminum oxide (Ax203), containing 5 to 10 parts of aluminum oxide (Ax203), and a low melting point lead glass frit in the mixture. The non-linear resistor according to claim 1, characterized in that it occupies 95 times.
(3) 面士火性J己’i+ r:!Iがアルミツー、
シリツノ、マグネシア、ジルコニア、ノ・ライト、コー
ディエライト。 長石、メルク、粘土の少なくともいずれか一種類以上か
ら成ることを特徴とする特h′F請求の・叱囲第1項記
載の非直線抵抗体。
(3) Menshi fire Jki'i+ r:! I is aluminum two,
Shiritsuno, magnesia, zirconia, no-lite, cordierite. The nonlinear resistor according to claim 1, characterized in that it is made of at least one of feldspar, Melk, and clay.
JP57124993A 1982-07-20 1982-07-20 Nonlinear resistor Granted JPS5916304A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57124993A JPS5916304A (en) 1982-07-20 1982-07-20 Nonlinear resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57124993A JPS5916304A (en) 1982-07-20 1982-07-20 Nonlinear resistor

Publications (2)

Publication Number Publication Date
JPS5916304A true JPS5916304A (en) 1984-01-27
JPH0223004B2 JPH0223004B2 (en) 1990-05-22

Family

ID=14899244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57124993A Granted JPS5916304A (en) 1982-07-20 1982-07-20 Nonlinear resistor

Country Status (1)

Country Link
JP (1) JPS5916304A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195501A (en) * 1984-10-17 1986-05-14 株式会社東芝 Non-linear resistor
JPS63167941A (en) * 1987-01-05 1988-07-12 Mori Seiki Seisakusho:Kk Runaway stopping system for multi-processor
JP2000235905A (en) * 1999-02-15 2000-08-29 Meidensha Corp Manufacture of nonlinear resistor
JP2000243607A (en) * 1999-02-18 2000-09-08 Meidensha Corp Manufacture of nonlinear resistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598802A (en) * 1979-01-24 1980-07-28 Hitachi Ltd Nonnlinear voltage resistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598802A (en) * 1979-01-24 1980-07-28 Hitachi Ltd Nonnlinear voltage resistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195501A (en) * 1984-10-17 1986-05-14 株式会社東芝 Non-linear resistor
JPH0513361B2 (en) * 1984-10-17 1993-02-22 Tokyo Shibaura Electric Co
JPS63167941A (en) * 1987-01-05 1988-07-12 Mori Seiki Seisakusho:Kk Runaway stopping system for multi-processor
JP2000235905A (en) * 1999-02-15 2000-08-29 Meidensha Corp Manufacture of nonlinear resistor
JP2000243607A (en) * 1999-02-18 2000-09-08 Meidensha Corp Manufacture of nonlinear resistor

Also Published As

Publication number Publication date
JPH0223004B2 (en) 1990-05-22

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