JPS59161080A - 光電変換素子の製造方法 - Google Patents

光電変換素子の製造方法

Info

Publication number
JPS59161080A
JPS59161080A JP58034408A JP3440883A JPS59161080A JP S59161080 A JPS59161080 A JP S59161080A JP 58034408 A JP58034408 A JP 58034408A JP 3440883 A JP3440883 A JP 3440883A JP S59161080 A JPS59161080 A JP S59161080A
Authority
JP
Japan
Prior art keywords
type
amorphous silicon
disilane
photoelectric conversion
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58034408A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0563951B2 (enrdf_load_stackoverflow
Inventor
Nobuhiro Fukuda
福田　信弘
Kenji Miyaji
宮地　賢司
Yoji Kawahara
河原　洋二
Hidemi Takenouchi
竹之内　秀実
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP58034408A priority Critical patent/JPS59161080A/ja
Publication of JPS59161080A publication Critical patent/JPS59161080A/ja
Publication of JPH0563951B2 publication Critical patent/JPH0563951B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP58034408A 1983-03-04 1983-03-04 光電変換素子の製造方法 Granted JPS59161080A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58034408A JPS59161080A (ja) 1983-03-04 1983-03-04 光電変換素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58034408A JPS59161080A (ja) 1983-03-04 1983-03-04 光電変換素子の製造方法

Publications (2)

Publication Number Publication Date
JPS59161080A true JPS59161080A (ja) 1984-09-11
JPH0563951B2 JPH0563951B2 (enrdf_load_stackoverflow) 1993-09-13

Family

ID=12413358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58034408A Granted JPS59161080A (ja) 1983-03-04 1983-03-04 光電変換素子の製造方法

Country Status (1)

Country Link
JP (1) JPS59161080A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256566A (en) * 1991-05-08 1993-10-26 Texas Instruments Incorporated Method for in-situ doping of deposited silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256566A (en) * 1991-05-08 1993-10-26 Texas Instruments Incorporated Method for in-situ doping of deposited silicon

Also Published As

Publication number Publication date
JPH0563951B2 (enrdf_load_stackoverflow) 1993-09-13

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