JPS59161066U - Thin film ultrasonic sensor - Google Patents

Thin film ultrasonic sensor

Info

Publication number
JPS59161066U
JPS59161066U JP5625683U JP5625683U JPS59161066U JP S59161066 U JPS59161066 U JP S59161066U JP 5625683 U JP5625683 U JP 5625683U JP 5625683 U JP5625683 U JP 5625683U JP S59161066 U JPS59161066 U JP S59161066U
Authority
JP
Japan
Prior art keywords
thin film
ultrasonic sensor
film ultrasonic
electrode
piezoelectric thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5625683U
Other languages
Japanese (ja)
Inventor
木下　勝裕
司郎 緒方
政義 谷口
安田　博彦
日野田　征佑
Original Assignee
オムロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by オムロン株式会社 filed Critical オムロン株式会社
Priority to JP5625683U priority Critical patent/JPS59161066U/en
Publication of JPS59161066U publication Critical patent/JPS59161066U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の薄膜型超音波センサの斜視図、第２図は
本考案による薄膜型超音波センサの斜視、図を示す。 １１：シリコン単結晶基板、１２：圧電性薄膜、１３：
二酸化シリコン薄膜、１４：電極、１５：片持梁、１６
：バイモルフ変換子、１７：根元部分、２０：穴。FIG. 1 is a perspective view of a conventional thin film type ultrasonic sensor, and FIG. 2 is a perspective view of a thin film type ultrasonic sensor according to the present invention. 11: Silicon single crystal substrate, 12: Piezoelectric thin film, 13:
Silicon dioxide thin film, 14: electrode, 15: cantilever, 16
: Bimorph converter, 17: Root part, 20: Hole.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] シリコン単結晶基板上に、超音波を受けて振動゛　する
バイモルフ変換子を圧電性薄膜と、梁状の支持基板と、
出力を取り出す電極とから形成し、上°　　　記電極を
圧電性薄膜の片側に形成し、超音波により発生した応力
と平行方向に出力電圧を取り出すことを特徴とする薄膜
型超音波センサ。A bimorph transducer that vibrates in response to ultrasonic waves is mounted on a silicon single crystal substrate, with a piezoelectric thin film, a beam-shaped support substrate, and
1. A thin film type ultrasonic sensor comprising: an electrode for extracting an output; the electrode is formed on one side of a piezoelectric thin film; and the output voltage is extracted in a direction parallel to the stress generated by the ultrasonic wave.
JP5625683U 1983-04-14 1983-04-14 Thin film ultrasonic sensor Pending JPS59161066U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5625683U JPS59161066U (en) 1983-04-14 1983-04-14 Thin film ultrasonic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5625683U JPS59161066U (en) 1983-04-14 1983-04-14 Thin film ultrasonic sensor

Publications (1)

Publication Number Publication Date
JPS59161066U true JPS59161066U (en) 1984-10-29

Family

ID=30186579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5625683U Pending JPS59161066U (en) 1983-04-14 1983-04-14 Thin film ultrasonic sensor

Country Status (1)

Country Link
JP (1) JPS59161066U (en)

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