JPS59154063A - Photo driven type semiconductor device - Google Patents

Photo driven type semiconductor device

Info

Publication number
JPS59154063A
JPS59154063A JP2759383A JP2759383A JPS59154063A JP S59154063 A JPS59154063 A JP S59154063A JP 2759383 A JP2759383 A JP 2759383A JP 2759383 A JP2759383 A JP 2759383A JP S59154063 A JPS59154063 A JP S59154063A
Authority
JP
Japan
Prior art keywords
light
light guide
photo
semiconductor substrate
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2759383A
Other languages
Japanese (ja)
Inventor
Mutsuhiro Mori
睦宏 森
Nobutake Konishi
信武 小西
Takeshi Yokota
横田 武司
Tomoyuki Tanaka
知行 田中
Katsumi Akabane
赤羽根 克己
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2759383A priority Critical patent/JPS59154063A/en
Publication of JPS59154063A publication Critical patent/JPS59154063A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/421Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4295Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain the titled device having a high photo transmission efficiency which can be miniaturized by a method wherein a taper whose cross sectional area reduces to the direction of photo signal transmission is provided at the part nearly parallel with the main surface of a semiconductor substrate of an optical guide. CONSTITUTION:The tapered part 41a whose cross sectional area reduces to the direction of photo signal transmission, i,e., away from the end of an insulation ring through part is formed at the part 41 nearly parallel with the main surface of the semiconductor substrate of the optical guide 4, and the curved part is reduced in cross section more than the end of the insulation ring through part. Light loss is decreased, and the curvature radius can be reduced by reducing the diameter of the curved part; therefore the improvement of the photo transmission efficiency and the miniaturization of the titled device are enabled. On the other hand, since the optical guide is made larger in the diameter of the photo signal input end surface than in that of the curved part, the photo receiving area at said surface can be enlarged, which is accordingly very advantageous to the optical coupling with the photo signal supplied from an optical fiber cable 3.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は光駆動型半導体装置に係り、特にその装置に内
蔵された光ガイドの光伝送効率向上に好適な構造に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a light-driven semiconductor device, and particularly to a structure suitable for improving the light transmission efficiency of a light guide built into the device.

〔発明の背景〕[Background of the invention]

光駆動型半導体装置の1つでおる光点弧サイリスタは、
光信号の照射によシ唄方向阻止状態から導通状態にスイ
ッチする機能を有する。光点弧サイリスクを用いた装置
は造営の電気信号によシ点弧するサイリスクの装置に比
べ、(1)主回路とゲート回路とを光ファイ“バケーブ
ル寺で在島に電気的に絶縁できる、(2)光信号が電磁
誘勢によるノイズに強い、などの利点がある。このため
、最近これらの利点を最も発蓮できる、サイリスタを多
数個換装徴用としての光点弧サイリスタの開発が急速に
進んでいる。この種の装置では、制御する電力が1kA
以上、100kV以上にも及ぶため、例えば1.5kA
、4kVのサイリスタは直列接続で積層が可能なように
円盤状の形をしておシ、光点弧サイリスタでも第1図に
示すような円盤状の構造が適している。第1図において
、光点弧サイリスタ素子1は互いに反対側に位置する一
対の主面111゜112間に所定のpn接合を有する半
導体基体11とその両主面に設けられたアノード電極1
2及びカソード電極13から成シ、パッケージ2内に気
密に収納されている。パッケージ2は半導体基体11の
両側に位置し、アノード電極12及びカソード電極13
に電気的に連なる一対のブロック状電極21.22と、
ブロック状電極相互を絶縁しかつ気密に封止する絶@猿
23とから構成されている。この光点弧サイリスタのパ
ッケージ2は円盤状となっているため、一方のパッケー
ジのブロック状電極上に他方のパッケージのブロック状
電極を放熱部材を介して積み重ねることができるため、
直列接続が答易である。光点弧サイリスタ素子lを点弧
させる光信号200には、例えば発光ダイオード(図示
せず)の光を用いることができる。発光ダイオード等か
らの光は光フアイバケーブル3と、絶縁環23を貫通し
て受光面14に達する光ガイド4を介して、光点弧サイ
リスタ素子lに導かれる。光フアイバグープル3と光ガ
イド4は、例えば雄ねじを有するコネクタスリーブ61
と袋ナツト62によ)−yt、学的に結合されている。
A light-igniting thyristor, which is one of the light-driven semiconductor devices, is
It has a function of switching from a direction blocking state to a conducting state by irradiating an optical signal. Compared to the Cyrisk device, which is activated by an electrical signal from the building, the device using optically activated Cyrisk has the following advantages: (1) The main circuit and gate circuit can be electrically isolated on the island using an optical fiber cable. , (2) The optical signal is resistant to noise caused by electromagnetic induction.For this reason, there has recently been a rapid development of optical ignition thyristors, which can make the most of these advantages and require the replacement of multiple thyristors. In this type of device, the control power is 1kA.
For example, 1.5kA because it reaches more than 100kV.
, 4kV thyristors are disk-shaped so that they can be stacked in series, and a disk-shaped structure as shown in FIG. 1 is also suitable for light-ignition thyristors. In FIG. 1, a light-ignition thyristor element 1 includes a semiconductor substrate 11 having a predetermined pn junction between a pair of principal surfaces 111 and 112 located on opposite sides, and an anode electrode 1 provided on both principal surfaces thereof.
2 and a cathode electrode 13, and is hermetically housed in the package 2. The package 2 is located on both sides of the semiconductor substrate 11 and has an anode electrode 12 and a cathode electrode 13.
a pair of block-shaped electrodes 21 and 22 that are electrically connected to the
The block-shaped electrodes are insulated from each other and hermetically sealed. Since the package 2 of this light ignition thyristor is disk-shaped, the block-shaped electrode of one package can be stacked on the block-shaped electrode of the other package via the heat dissipation member.
Series connection is easy. For example, light from a light emitting diode (not shown) can be used as the light signal 200 for igniting the light ignition thyristor element l. Light from a light emitting diode or the like is guided to the light firing thyristor element l via the optical fiber cable 3 and the light guide 4 which passes through the insulating ring 23 and reaches the light receiving surface 14. The optical fiber group 3 and the light guide 4 are connected to a connector sleeve 61 having a male thread, for example.
and by the cap nut 62)-yt, are logically connected.

光ガイド4は半導体基体の主面と略平行をなして伸び絶
縁環を貫通しかつ絶縁環に気密に固着される部分41と
、半導体基体の主面と直交する方向に所定の曲率半径で
湾曲し端面が受光面に対向する部分42とから成シ、光
信号200を集中させ光点弧感度を向上させるために、
部分42の先端がテーパ状に細くなっているものもめる
。ところが、光ガイド4の湾曲部で光の進路が急激に曲
げられるため、光が外部に漏れ、光損失が増大するとい
う欠点があった。亨だ、この光損失を少なくするために
湾曲部の曲率半径を大きくすることが考えられるが、ブ
ロック状電極22を厚くしなければならず、パッケージ
2が大型化するにかシではなく、熱抵抗や導通時のオン
抵抗が高くなるという欠点がめった。
The light guide 4 has a portion 41 that extends substantially parallel to the main surface of the semiconductor substrate, passes through the insulating ring, and is hermetically fixed to the insulating ring, and a portion 41 that is curved with a predetermined radius of curvature in a direction perpendicular to the main surface of the semiconductor substrate. and a portion 42 whose end face faces the light receiving surface, in order to concentrate the optical signal 200 and improve the light ignition sensitivity.
Also note that the tip of the portion 42 is tapered. However, since the path of the light is sharply bent at the curved portion of the light guide 4, the light leaks to the outside, resulting in an increase in light loss. In order to reduce this optical loss, it is possible to increase the radius of curvature of the curved part, but this would require making the block-shaped electrode 22 thicker, which would increase the size of the package 2 and reduce heat loss. The drawback was that the resistance and on-resistance during conduction were high.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、上記した従来技術の欠点をな(シ、光
伝送効率が高く、装置の小型化が可能な光ガイドを有す
る光駆動屋半導体装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide an optical driver semiconductor device having a light guide that overcomes the drawbacks of the prior art described above, has high optical transmission efficiency, and allows miniaturization of the device.

〔発明の概要〕[Summary of the invention]

本発明の特徴とするところは、光ガイドの半導体基体の
主面と略平行をなす部分に光信号の伝送方向に断面積が
減少するテーパーを設けた点にある。
A feature of the present invention is that a taper is provided in a portion of the light guide that is substantially parallel to the main surface of the semiconductor substrate so that the cross-sectional area decreases in the optical signal transmission direction.

〔発明の実施例〕[Embodiments of the invention]

以下本発明を実施例として示した図面によシ詳細に説明
する。第2図は本発明装置の一実施例で、第1図と同じ
個所は同符号で示しておる。この実施例の%徴は、光ガ
イド4の半導体基体の主面と略平行をなす部分41に、
光信号の伝送方向即ち絶縁環貫通部端から遠ざかる方向
に断面積が減少するテーパ一部41aを形成し、湾曲部
は絶縁環貫通部端よシ小さい断面積にした点にある。湾
曲部の曲率半径と光損失の関係を光ガイドの湾曲部の径
をパラメータにして第3図に示す。曲線Aは湾曲部の径
が小さな第2区に示す光ガイドの特性を、曲線Bは径の
大きな第1図に示す光ガイドの特性を示している。この
図より、同じ曲率半径では径が小さいAの方がBよシ光
損失が少ないことが分かる。また、同じ光損失とした場
合、径が小さいAの方がBよ多曲率半径を小さくできる
。従って、第2図の光ガイドによれば、湾曲部の径を小
さくすることで、光損失を少なくし、曲率半径を小さく
することができ、光伝送効率の向上と装置の小型化が可
能となる。一方、光ガイドは、光信号の入力端面の径を
湾曲部の径に比べ大きくしているため、入力端面での受
光面積を広くでき、外部(例えば第1図に示した光フア
イバケーブル3)から供給される光信号との光結合に非
常に有利である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be explained in detail below with reference to the drawings shown as embodiments. FIG. 2 shows an embodiment of the apparatus of the present invention, in which the same parts as in FIG. 1 are designated by the same reference numerals. In this embodiment, the % characteristics are as follows:
A tapered portion 41a is formed whose cross-sectional area decreases in the optical signal transmission direction, that is, in the direction away from the end of the insulating ring penetrating portion, and the curved portion has a smaller cross-sectional area than the end of the insulating ring penetrating portion. The relationship between the radius of curvature of the curved portion and the optical loss is shown in FIG. 3 using the diameter of the curved portion of the light guide as a parameter. Curve A shows the characteristics of the light guide shown in the second section where the diameter of the curved part is small, and curve B shows the characteristics of the light guide shown in FIG. 1 where the diameter of the curved part is large. From this figure, it can be seen that for the same radius of curvature, A, which has a smaller diameter, has less optical loss than B. Further, when the optical loss is the same, A with a smaller diameter can have a smaller radius of polycurvature than B. Therefore, according to the light guide shown in Fig. 2, by reducing the diameter of the curved part, it is possible to reduce optical loss and reduce the radius of curvature, which makes it possible to improve optical transmission efficiency and downsize the device. Become. On the other hand, in the light guide, the diameter of the input end face of the optical signal is made larger than the diameter of the curved part, so the light receiving area at the input end face can be widened, and external (for example, optical fiber cable 3 shown in Fig. 1) This is very advantageous for optical coupling with optical signals supplied from

第4図は、本発明の他の実施例を示すもので、光ガイド
40半導体基体11の主面111と略平行をなす部分4
1を、絶縁@23を貫通する第1部411と、パンケー
ジ2内に配置される第2部412とに分割した点におい
て、第2図の実施例と相違している。第1部411と第
2部412とは連結用画定治具63と連結!壌64を用
いてコネクタスリーブ61に連結されている。
FIG. 4 shows another embodiment of the present invention, in which a portion 4 of the light guide 40 is approximately parallel to the main surface 111 of the semiconductor substrate 11.
This embodiment differs from the embodiment shown in FIG. 2 in that the first part 411 penetrates through the insulation @23 and the second part 412 is disposed inside the pan cage 2. The first part 411 and the second part 412 are connected with a connection defining jig 63! It is connected to the connector sleeve 61 using a thread 64 .

この光ガイド構造では、光做絖部を一一所増したことに
よる光損失が若干化じるが、第2部4120入力端の径
を第1部411の径に比べ同等以上に大きくしているた
め光損失は少ない。加えて、本構造では、コネクタスリ
ーブと気密封止する光ガイドをL字型の長い光ガイド、
の代わシに短かい光ガイドを用いることができるので作
業性が向上する。また、光ガイドのように、出力端面と
受光面14との光学的な位置合わせを考慮することな(
、光導入部の光ガイドとコネクタスリーブ61の気密封
止の作業が可能であるという利点もある。
In this light guide structure, the optical loss is slightly increased due to the addition of the optical fiber part, but the diameter of the input end of the second part 4120 is made larger than the diameter of the first part 411. Therefore, there is little light loss. In addition, in this structure, the light guide that is hermetically sealed with the connector sleeve is an L-shaped long light guide,
Work efficiency is improved because a short light guide can be used instead. In addition, unlike a light guide, there is no need to consider optical alignment between the output end face and the light receiving surface 14 (
Another advantage is that the light guide of the light introduction part and the connector sleeve 61 can be hermetically sealed.

光ガイドの第2部412は、第2図の光ガイドの部分4
1と同じく、湾曲部の径が元信号入力端の径よシ小さく
なっておシ、第2図の装置と同様の効果を有することは
言うまでもない。
The second part 412 of the light guide is similar to part 4 of the light guide in FIG.
1, the diameter of the curved portion is smaller than the diameter of the original signal input end, and it goes without saying that it has the same effect as the device shown in FIG.

〔発明の効果〕〔Effect of the invention〕

以上、本発明によれば、光駆動型半導体装置の光ガイド
において、光ガイドの湾曲部の径を小さくすることでそ
の曲率半径を小さくできるので、光伝送効率が高く、小
型の光駆動半導体装置が得られる。
As described above, according to the present invention, in the light guide of an optically driven semiconductor device, the radius of curvature can be reduced by reducing the diameter of the curved portion of the light guide, so that the optical transmission efficiency is high and the optically driven semiconductor device is small. is obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の光点弧サイリスタの概略断面図、第2図
は本発明の一実施例を示す概略断面図、第3図は本発明
の効果を示す特性図、第4図は本発明の他の実施例を示
す概略断面図である。 l・・・光点弧サイリスク素子、14・・・受光面、4
゜憾J図 第4図
Fig. 1 is a schematic sectional view of a conventional light ignition thyristor, Fig. 2 is a schematic sectional view showing an embodiment of the present invention, Fig. 3 is a characteristic diagram showing the effects of the present invention, and Fig. 4 is a schematic sectional view of the present invention. FIG. 3 is a schematic cross-sectional view showing another embodiment of the invention. l... Light ignition cyrisk element, 14... Light receiving surface, 4
゜SorryJFigure 4

Claims (1)

【特許請求の範囲】 1、互いに反対側に位置する一対の主面間に所定のpn
接合を有し、一方の主面の一部が受光面となる半導体基
体と、半導体基体の両主面の少くとも受光面を除く個所
に形成した一対の電極とを備える光半導体素子、 光半導体素子の両側に位置し、それぞれ光半導体素子の
一対の電極に電気的に連なる一対のブロック状t&と、
ブロック状電極相互間を絶縁しかつ気密に封止する絶縁
環とを備え、内部に光半導体素子を気密に収納するパッ
ケージ、 半導体基体の主面と略平行をなして伸び絶縁環を貫通し
かつ絶縁狽に気密に固着される部分と、半導体基体の主
面と直交する方向に所定の曲率半径で湾曲し端面が半導
体基体の受光面に対向する部分とを備え、主面と略平行
をなす部分が絶縁環貫通部端から遠ざかるに従って断面
積が小さくなるチーツク泗を有する光ガイド、 を具備することを%徴とする光駆動型半導体装置。 2、特許請求の範囲第1JAにおいて、光ガイドが絶縁
環を貫通する第1の光ガイド部分と、ノ<ツケージ内に
配置される第2の光ガイド部分とに分割されていること
を特徴とする光駆動型半導体装置。
[Claims] 1. A predetermined pn between a pair of principal surfaces located on opposite sides
An optical semiconductor element, an optical semiconductor, comprising a semiconductor substrate having a junction and a part of one principal surface serving as a light-receiving surface, and a pair of electrodes formed on at least the portions of both principal surfaces of the semiconductor substrate excluding the light-receiving surface. a pair of block-shaped t & located on both sides of the element and electrically connected to the pair of electrodes of the optical semiconductor element;
A package comprising an insulating ring that insulates and airtightly seals between block-shaped electrodes, and in which an optical semiconductor element is hermetically housed; It has a part that is airtightly fixed to the insulator, and a part that is curved with a predetermined radius of curvature in a direction perpendicular to the main surface of the semiconductor substrate, and whose end face faces the light-receiving surface of the semiconductor substrate, and is substantially parallel to the main surface. A light-driven semiconductor device comprising: a light guide having a cheekbone whose cross-sectional area decreases as the portion moves away from the end of the insulating ring penetration portion. 2. Claim 1 JA is characterized in that the light guide is divided into a first light guide portion passing through the insulating ring and a second light guide portion disposed within the cage. A light-driven semiconductor device.
JP2759383A 1983-02-23 1983-02-23 Photo driven type semiconductor device Pending JPS59154063A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2759383A JPS59154063A (en) 1983-02-23 1983-02-23 Photo driven type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2759383A JPS59154063A (en) 1983-02-23 1983-02-23 Photo driven type semiconductor device

Publications (1)

Publication Number Publication Date
JPS59154063A true JPS59154063A (en) 1984-09-03

Family

ID=12225239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2759383A Pending JPS59154063A (en) 1983-02-23 1983-02-23 Photo driven type semiconductor device

Country Status (1)

Country Link
JP (1) JPS59154063A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0780711A1 (en) * 1995-12-20 1997-06-25 Mitsubishi Denki Kabushiki Kaisha Phototrigger thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0780711A1 (en) * 1995-12-20 1997-06-25 Mitsubishi Denki Kabushiki Kaisha Phototrigger thyristor
US5847416A (en) * 1995-12-20 1998-12-08 Mitsubishi Denki Kabushiki Kaisha Phototrigger thyristor

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