JPS59151950A - Semiconductive laser probe for treatment - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a therapeutic semiconductor laser probe whose output frequency and pulse width are electrically controllable and which is easy to operate.

[Technical field of invention]

As described in Japanese Unexamined Patent Publication No. 57-72660, a conventional laser treatment device consists of an end piece (also called a probe) that contains a semiconductor that oscillates a laser, and an electronic circuit that applies a predetermined current to the semiconductor. It becomes a separate body,
Electrically connected via cable.

Then, the pulse corresponding to the frequency and pulse width specified by the frequency selection section and pulse width selection section in the electronic circuit section is amplified to a constant current by the constant current circuit, and the constant current is applied to the semiconductor inside the handpiece. The device is configured to emit a laser beam from the handpiece to the affected area by applying a voltage and causing the semiconductor to oscillate.

However, the laser treatment device with the above configuration is inconvenient to handle because the nozzle in the handpiece must be replaced from time to time in order to emit laser light of different wavelengths and different wattages depending on the irradiated area and individual differences. .

[Purpose of the invention]

The present invention was made in view of the above circumstances, and an object of the present invention is to provide a therapeutic semiconductor laser probe that can easily irradiate appropriate laser light according to the irradiation area and individual differences with a simple operation. That is.

[Summary of the invention]

To achieve the above object, the present invention has a plurality of semiconductors for laser beam oscillation, a constant current circuit that applies a current to each of the semiconductors for laser beam oscillation, and a selector circuit that selectively operates the constant current circuit. It is characterized by having the following.

[Embodiments of the invention]

An embodiment of the invention will be described with reference to the drawings.

As shown in FIGS. 1 and 2, a therapeutic semiconductor laser probe 2, which is an embodiment of the present invention, includes a plurality of laser beam oscillation semiconductors 4A to 4A whose output frequency and pulse width can be electrically controlled. 4D, a plurality of constant current circuits 6A to 6D that apply current to each of the plurality of laser beam oscillation semiconductors 4A to 4D to oscillate laser light, and a predetermined one of the plurality of constant current circuits 6A to 6D. a selector circuit 8 that selects and operates constant current circuits 68 to 6D;
Flat light lenses 10A to 1 that once convert laser light emitted by oscillation of laser light oscillation semiconductors 4A to 4D into parallel light beams
Lens unit 1 equipped with a focusing lens with a built-in zoom function that focuses 0D and parallel laser beams on a desired point
2, a cylindrical case 18 having a selection switch 14 for selecting a wavelength and output wattage suitable for the irradiation area and individual differences, and an input switch 16 for controlling irradiation at hand.
The interior is made up of. In FIG. 1, reference numeral 20 indicates a cable for inputting a pulse signal to the selector unit 8 from an external device (not shown).

As the constant current circuits 6A to 6D, known circuits can be used as appropriate.

The selector circuit 8 selects, for example, one of the patterns (0 to 9, A to F) of the address signal X specified by the selection switch 14 (for example, 16 signals as shown in FIG. 6). When the output of ROM8A is "1", a pulse signal Y inputted from an external device is applied to the constant current circuits 6A to 6D, and ROM8A is selected.
The switch group 8B may be configured to cut off the pulse signal Y when the output of the switch is "0".

Note that the parallel lenses 10A to 10D in the lens section 10
Since the laser light emitted from the laser light oscillation semiconductors 48 to 4D emits in a radial manner, it is used to convert the emitted laser light into a parallel beam.

When the therapeutic semiconductor laser probe 2 is configured as described above, the operator can select the wavelength and output suitable for the irradiation area and individual differences by simply operating the selection switch 14 and the input switch 16 provided on the cylindrical case 18. The irradiation site can be irradiated with a laser beam of several watts. When the wavelength and output wattage of the laser beam are specified by operating the selection switch 14 provided on the knob and the cylindrical case 18, an external device (not shown) (this external device includes a frequency selection unit that determines the frequency of the laser beam) , a pulse oscillation section, and a pulse width selection section that determines the width of the oscillated pulse.)Y#)R
An address signal X is input to OMBA, and according to the address signal
Since the input signal of B is 11'', the pulse signal input from the external device is output to the constant current circuits 6A to 6D, and the current amplified to a constant value by the constant current circuits 6A to 6D is used for laser beam oscillation. By applying the voltage to the semiconductors 4A to 4D, laser light is emitted from the laser light oscillation semiconductors 4A to 4D, and the emitted laser light is focused on the irradiation site by the lens portion 10. In the above case, all of the four laser beam oscillation semiconductors 48 to 4D are operated, but it is possible to arbitrarily determine which laser beam oscillation semiconductors 48 to 4D to operate depending on the contents of the address signal X. can. That is, by operating the selection switch 14, the output wattage of the laser beam can be arbitrarily varied, and the wavelength of the laser beam can also be arbitrarily varied.

Although one embodiment of the present invention has been described in detail above, the present invention is not limited to the above embodiment, and can be implemented with appropriate modifications within the scope of the gist of the invention. Needless to say.

In addition to the selector circuit 8 in the above embodiment, as a second embodiment, as shown in FIG.
It is also possible to use a selector circuit 8 composed of C8C, 8D and 8E to 8H (or game) 8E to 8H in which the outputs of the decoder ICs 8C and 8D are powered by two people.

〔Effect of the invention〕

According to the present invention, there is provided a therapeutic semiconductor laser probe that can easily emit a laser beam having a frequency and output wattage suitable for the irradiation part and individual differences by simply operating a switch provided in the case. Can be done.

[Brief explanation of the drawing]

FIG. 1 is a partially cutaway side view showing a semiconductor laser probe for treatment which is an embodiment of the present invention, FIG. 2 is a schematic explanatory diagram showing the configuration of the semiconductor laser probe for treatment, and FIG. An explanatory diagram showing the contents of a ROM in a semiconductor laser probe, and FIG. 4 are a schematic explanatory diagram showing another embodiment of the present invention. 2... Semiconductor laser probe for treatment, 4A to 4D...
- Semiconductor for laser beam oscillation, 6A to 6D...constant current circuit, 8...selector circuit.

Claims (1)

[Claims] A therapeutic semiconductor laser probe comprising a plurality of semiconductors for laser beam oscillation, a constant current circuit that applies a current to each of the semiconductors for laser beam oscillation, and a selector circuit that selectively operates the constant current circuit.