JPS59147023A - Preparation of thin film of metal - Google Patents
Preparation of thin film of metalInfo
- Publication number
- JPS59147023A JPS59147023A JP2061383A JP2061383A JPS59147023A JP S59147023 A JPS59147023 A JP S59147023A JP 2061383 A JP2061383 A JP 2061383A JP 2061383 A JP2061383 A JP 2061383A JP S59147023 A JPS59147023 A JP S59147023A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- metal
- cylindrical
- substrate
- metal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は高分子材料より成る基板上に金属薄膜を形成す
る際の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a manufacturing method for forming a metal thin film on a substrate made of a polymeric material.
従来例の構成とその問題点
高分子材料より成る基板上に真空蒸着法によって金属薄
膜を形成する方法としては、この基板を円筒状キャンに
沿わせて走行させつつ蒸着する方法が最も優れている。Conventional structure and problems The best way to form a metal thin film on a substrate made of polymeric material by vacuum evaporation is to deposit it while moving the substrate along a cylindrical can. .
第1図にこのような方法を用いた真空蒸着装置の内部構
造の概略を示す。高分子材料より成る基板1は円筒状キ
ャン2の周側面に沿って矢印の方向に走行する。この基
板1上に蒸発源6によって金属薄膜が形成される。第1
図中3は供給ロール、4は巻取ロールである。このよう
な真空蒸着装置を用いて高分子材料より成る基板上に金
属薄膜を形成する際に、金属薄膜の膜厚が薄く数100
八以下の場合には安定した金属薄膜が形成されるが、膜
厚が数100Å以上の金属薄膜を数100人/秒以上の
高堆積速度で形成する場合には蒸発源からの輻射熱や蒸
発原子の凝縮熱等の原因により基板の熱変形や熱分解を
生じ安定した金属薄膜を形成することができない。FIG. 1 schematically shows the internal structure of a vacuum evaporation apparatus using such a method. A substrate 1 made of a polymeric material runs along the circumferential side of a cylindrical can 2 in the direction of the arrow. A thin metal film is formed on the substrate 1 by the evaporation source 6 . 1st
In the figure, 3 is a supply roll, and 4 is a take-up roll. When forming a metal thin film on a substrate made of a polymeric material using such a vacuum evaporation apparatus, the thickness of the metal thin film is as thin as several hundreds of nanometers.
8 or less, a stable metal thin film is formed, but when forming a metal thin film with a thickness of several 100 Å or more at a high deposition rate of several 100 Å or more, radiant heat from the evaporation source and evaporated atoms The heat of condensation causes thermal deformation and thermal decomposition of the substrate, making it impossible to form a stable metal thin film.
従って数100八以上の膜厚の金属薄膜を形成する際に
はこれらの熱的ダメージを避けるために伺らかの対策を
採らなくてはならない。従来このような対策の一つとし
て、熱的ダメージを受けずにすむ数100八以下の膜厚
の金属薄膜を蒸着し、その上にこの金属薄膜と円筒状キ
ャンとの間に電位差を設けて数100八以上の膜厚の金
属薄膜を数100八/秒以上の高堆積速度で形成する方
法が考えられている。第2図にこのような方法を用いた
真空蒸着装置の内部構造の概略を示す。金属薄膜の蒸着
された高分子材料より成る基板6は、その金属面を金属
ローラー7に接して走行しこの金属ローラー7を通じて
電源8により接地された円筒状キャン2との間に電位差
が与えられる。このようにして基板6と円筒状キャン2
との間に1−位差を設けると静電引力により基板6が円
筒状キャン2に張り付く。基板6が円筒状キャン2に張
り付いた状態で蒸発源5によって金属薄膜を形成すると
、数100八以上の膜厚の金属薄膜を数1oOA/秒以
上の高堆積速度で形成する際に、基板6が受ける蒸発源
からの輻射熱や蒸発原子の凝縮熱等の熱を、円筒状キャ
ン2へ熱伝導により拡散することができ、基板6は熱変
形や熱分解を生じない。Therefore, when forming a metal thin film with a thickness of several hundred or more, certain measures must be taken to avoid such thermal damage. Conventionally, one of the countermeasures was to deposit a thin metal film with a thickness of less than 100 cm to avoid thermal damage, and then create a potential difference between this thin metal film and the cylindrical can. A method of forming a metal thin film with a thickness of several hundred eights or more at a high deposition rate of several hundred eights per second or more has been considered. FIG. 2 schematically shows the internal structure of a vacuum evaporation apparatus using such a method. A substrate 6 made of a polymeric material on which a metal thin film is deposited runs on its metal surface in contact with a metal roller 7, and through this metal roller 7 a potential difference is applied between it and the grounded cylindrical can 2 by a power source 8. . In this way, the board 6 and the cylindrical can 2 are
If a 1-position difference is provided between them, the substrate 6 will stick to the cylindrical can 2 due to electrostatic attraction. If a metal thin film is formed by the evaporation source 5 while the substrate 6 is stuck to the cylindrical can 2, the substrate will be Heat such as radiant heat from the evaporation source and condensation heat of evaporated atoms received by the can 6 can be diffused to the cylindrical can 2 by thermal conduction, and the substrate 6 does not undergo thermal deformation or thermal decomposition.
以上のように円筒状キャンと基板との間に電位差を設け
ることにより、安定に膜を形成することができるが、第
2図のような方法では基板上にあらかじめ金属薄膜を蒸
着し基板上に導電性を持つ層を形成しておかなくてはな
らず、高分子材料より成る基板上に直接膜厚が数100
八以上の安定した金属薄膜を数100八/秒以上の高堆
積速度で蒸着することは不可能である。As described above, by creating a potential difference between the cylindrical can and the substrate, it is possible to form a stable film, but in the method shown in Figure 2, a thin metal film is vapor-deposited on the substrate in advance. A conductive layer must be formed in advance, and the film thickness is several hundreds of nanometers directly on the substrate made of polymer material.
It is not possible to deposit stable metal thin films of 8 or more at high deposition rates of more than a few 100 8/sec.
発明の目的
本発明は真空蒸着法により基板に熱変形や熱分解及びし
わを生じさせずに金属薄膜を作製する方法を提供するこ
とを目的とする。OBJECTS OF THE INVENTION An object of the present invention is to provide a method for producing a metal thin film using a vacuum evaporation method without causing thermal deformation, thermal decomposition, or wrinkles on a substrate.
発明の構成
本発明は円筒状キャンの周側面に沿って走行しつつある
高分子材料より成る基板上に直接金属薄膜を真空蒸着法
によって形成する際に、形成された金属薄膜と円筒状キ
ャンとの間に電位差を設けることを特徴とする金属薄膜
の製造方法であり、本発明の方法により高分子材料から
成る基板に熱変形や熱分解及びしわを生じさせずに金属
薄膜を形成することが可能である。Structure of the Invention The present invention is directed to forming a metal thin film directly on a substrate made of a polymeric material running along the circumferential side of a cylindrical can by a vacuum evaporation method. This is a method for producing a metal thin film, characterized by providing a potential difference between the metal thin films, and the method of the present invention makes it possible to form a metal thin film on a substrate made of a polymeric material without causing thermal deformation, thermal decomposition, or wrinkles. It is possible.
実施例の説明
第3図に本発明の方法を用いた真空蒸着装置の内部構造
の概略を示す。第3図において第1図。DESCRIPTION OF EMBODIMENTS FIG. 3 schematically shows the internal structure of a vacuum evaporation apparatus using the method of the present invention. FIG. 1 in FIG.
第2図と同一物は同一番号を付して説明を省略する。第
3図の装置の特徴とするところは、金属ローラー7の位
置が第2図に示す供給ロール3と円筒状キャン2の間か
ら円筒状キャン2と巻取ロール4との間へ移った点であ
る。高分子材料より成る基板上に直接金属薄膜を形成す
る場合、従来の第2図に示されたような方法では基板上
に導電性を持つ層が存在しないため円筒状キャー/との
間に電位差を設けることができず基板を静電引力で張り
付けて熱的ダメージから守ることは不可能であった。し
かし、第3図に示した本発明による方法では金属ローラ
ー7が円筒状キャン2と巻取ロール4との間に位置する
ため蒸着された金属薄膜か基板上に存在するので金属ロ
ーラー7を通じて基板上の金属薄膜と円筒状キャンとの
間に電位差を設けることができ基板6を静電引力によっ
て円筒状キャンに張り付けて熱的ダメージから守ること
ができる。本発明の方法では蒸発源によって形成された
金属層を通じて電位差を設けているため、基板が円筒状
キャンに張り付くのは、第3図で円筒状キャンの中心と
蒸発源とを結ぶ直線から右側即ち巻取ロール側でしかも
基板6が円筒状キャン2に接している部分のみであり、
同直線から左側即ち供給ロール側は金属層が未だ存在し
ないため円筒状キャンとの間に電位差を設けることがで
きず張り付いていない。けれども、基板6が受ける熱は
熱発源5からの輻射熱や蒸発原子の凝縮熱が主であるの
で蒸発源6より供給ロール3側では基板6は円筒状キャ
ン2に張り付いていなくても熱的ダメージを受けない。Components that are the same as those in FIG. 2 are given the same numbers and their explanations will be omitted. A feature of the device shown in FIG. 3 is that the position of the metal roller 7 has been moved from between the supply roll 3 and the cylindrical can 2 shown in FIG. 2 to between the cylindrical can 2 and the take-up roll 4. It is. When forming a metal thin film directly on a substrate made of a polymer material, the conventional method shown in Figure 2 creates a potential difference between the cylindrical cap and the cylindrical cap because there is no conductive layer on the substrate. It was impossible to protect the substrate from thermal damage by attaching it with electrostatic attraction. However, in the method according to the present invention shown in FIG. 3, since the metal roller 7 is located between the cylindrical can 2 and the take-up roll 4, the deposited metal thin film is present on the substrate, so the metal roller 7 passes through the substrate. A potential difference can be provided between the upper metal thin film and the cylindrical can, and the substrate 6 can be stuck to the cylindrical can by electrostatic attraction to protect it from thermal damage. In the method of the present invention, a potential difference is provided through the metal layer formed by the evaporation source, so the substrate sticks to the cylindrical can in the right side of the straight line connecting the center of the cylindrical can and the evaporation source in FIG. It is only the part on the take-up roll side where the substrate 6 is in contact with the cylindrical can 2,
Since the metal layer does not yet exist on the left side of the straight line, that is, on the supply roll side, it is not possible to create a potential difference between the metal layer and the cylindrical can, and the metal layer does not stick to the cylindrical can. However, since the heat that the substrate 6 receives is mainly radiant heat from the heat generation source 5 and condensation heat of evaporated atoms, the substrate 6 on the supply roll 3 side from the evaporation source 6 receives thermal heat even if it is not attached to the cylindrical can 2. Take no damage.
対策を講じていなければ熱的ダメージを受ける。蒸発源
5から巻取ロール4側では、基板6は円筒状キャン2に
張り付いているだめ熱的ダメージから守れるので、本発
明の方法で真空蒸着の際の熱的ダメージから基板6を守
ることができる。If precautions are not taken, thermal damage will occur. On the side from the evaporation source 5 to the take-up roll 4, the substrate 6 is stuck to the cylindrical can 2 and can be protected from thermal damage, so the method of the present invention protects the substrate 6 from thermal damage during vacuum evaporation. I can do it.
次に本発明の具体的な実施例を第3図を用いて説明する
。金属ローラー7に電源8によって100Vの電圧を印
加している。第3図では直流電源が描かれているが交流
電源でも良い。円筒状キャン2は接地されている。この
ような装置を用いて膜厚12μVtノポリエチレンテレ
フタレート基板上に金属薄膜として膜厚1000へのT
i膜4000Δ/秒の堆積速度で形成した。作成された
膜は非常に安定であり熱電は及びしわは見られなかった
。一方、金属ローラー了に電圧を印加しなかった場合に
は基板に熱分解を生じ穴があいた。Next, a specific embodiment of the present invention will be described using FIG. 3. A voltage of 100V is applied to the metal roller 7 by a power source 8. Although a DC power source is shown in Figure 3, an AC power source may also be used. The cylindrical can 2 is grounded. Using such a device, a metal thin film with a thickness of 1000 was applied to a polyethylene terephthalate substrate with a film thickness of 12 μVt.
The i-film was formed at a deposition rate of 4000Δ/sec. The produced membrane was very stable and showed no thermoelectricity or wrinkles. On the other hand, when no voltage was applied to the metal roller, thermal decomposition occurred in the substrate and holes were formed.
発明の効果
以上のように本発明の方法により静電引力で基板を円筒
状キャンに張り付けることが可能となり、熱まけ、しわ
等のない安定な金属薄膜を形成することができるもので
ある。そして、蒸着された金属薄膜を電極として利用で
きるので基板の表面をあらかじめ導電性にしておく必要
がないものである。Effects of the Invention As described above, the method of the present invention makes it possible to attach a substrate to a cylindrical can by electrostatic attraction, thereby forming a stable metal thin film that is free from heat buildup, wrinkles, etc. Furthermore, since the deposited metal thin film can be used as an electrode, there is no need to make the surface of the substrate conductive in advance.
第1図、第2図はそれぞれ従来例における金属薄膜の製
造方法の真空蒸着装置の内部構造の概略図、第3図は本
発明の金属薄膜の製造方法における真空蒸着装置の内部
構造の概略図である。
1・・・・・基板、2・・・・・・円筒状キャン、3・
・・・・・供給ロール、4・・・・・・巻取ローノペ6
・・・・・蒸発源、6・・・・・・金属薄膜を蒸着され
た基板、7・・・・・・金属ローラー、8・・・・・・
基板に電圧を印加するだめの電源。
代理人の氏名 弁理士 中 尾 敏 男 はが1名第1
図
第3図1 and 2 are schematic diagrams of the internal structure of a vacuum evaporation apparatus in a conventional method for producing a metal thin film, respectively, and FIG. 3 is a schematic diagram of an internal structure of a vacuum evaporation apparatus in a method for producing a metal thin film according to the present invention. It is. 1... Board, 2... Cylindrical can, 3...
...Supply roll, 4...Take-up roll 6
...Evaporation source, 6...Substrate on which a metal thin film is evaporated, 7...Metal roller, 8...
A power supply that applies voltage to the board. Name of agent: Patent attorney Toshio Nakao (1st person)
Figure 3
Claims (1)
料より成る基板上に直接金属薄膜を真空蒸着法によって
形成する際に、形成された金属薄膜と上記円筒状キャン
との間に電位差を設けることを特徴とする金属薄膜の製
造方法。When forming a metal thin film directly on a substrate made of a polymeric material running along the circumferential side of a cylindrical can by vacuum evaporation, a potential difference is created between the formed metal thin film and the cylindrical can. A method for manufacturing a metal thin film, comprising: providing a metal thin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2061383A JPS59147023A (en) | 1983-02-10 | 1983-02-10 | Preparation of thin film of metal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2061383A JPS59147023A (en) | 1983-02-10 | 1983-02-10 | Preparation of thin film of metal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59147023A true JPS59147023A (en) | 1984-08-23 |
JPH024675B2 JPH024675B2 (en) | 1990-01-30 |
Family
ID=12032104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2061383A Granted JPS59147023A (en) | 1983-02-10 | 1983-02-10 | Preparation of thin film of metal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59147023A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6318063A (en) * | 1986-07-10 | 1988-01-25 | Nippon Kokan Kk <Nkk> | Vacuum deposition method |
JPS6318064A (en) * | 1986-07-10 | 1988-01-25 | Nippon Kokan Kk <Nkk> | Vacuum deposition method |
JP2013036104A (en) * | 2011-08-10 | 2013-02-21 | Toray Advanced Film Co Ltd | Method and apparatus for forming thin film |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010163693A (en) * | 2010-04-12 | 2010-07-29 | Ulvac Japan Ltd | Winding type vacuum deposition method |
-
1983
- 1983-02-10 JP JP2061383A patent/JPS59147023A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6318063A (en) * | 1986-07-10 | 1988-01-25 | Nippon Kokan Kk <Nkk> | Vacuum deposition method |
JPS6318064A (en) * | 1986-07-10 | 1988-01-25 | Nippon Kokan Kk <Nkk> | Vacuum deposition method |
JP2013036104A (en) * | 2011-08-10 | 2013-02-21 | Toray Advanced Film Co Ltd | Method and apparatus for forming thin film |
Also Published As
Publication number | Publication date |
---|---|
JPH024675B2 (en) | 1990-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2748031A (en) | Reproduction of printed patterns by vacuum evaporation | |
EP0447550B1 (en) | Method for producing a metallized film for laminated chip capacitors | |
JPS59147023A (en) | Preparation of thin film of metal | |
US3729648A (en) | Method and apparatus for treating a web | |
US3330252A (en) | Masking device | |
JP2001351795A (en) | Method and device for eliminating static electricity from long film depositing base substance | |
KR930006121B1 (en) | Vapor deposition device | |
JPS59147026A (en) | Preparation of thin film of metal | |
JPS6130669A (en) | Production of thin metallic film | |
JPH02239428A (en) | Production of metal thin film | |
JPS6092467A (en) | Production of thin metallic film | |
JPS6059069A (en) | Manufacture of metallic thin film | |
JP3834078B2 (en) | Thin film formation method | |
JPH0223527A (en) | Production of thin metallic film | |
JPS63213659A (en) | Device for producing thin metallic film | |
JPS6358623A (en) | Apparatus for producing thin metallic film | |
JPS5897823A (en) | Method of producing metallized film condenser | |
JPS6256567A (en) | Production of metallic thin film | |
JPH0223526A (en) | Production of thin metallic film | |
JPS59149931A (en) | Production of thin metallic film | |
JPS59147024A (en) | Preparation of thin film of metal | |
JPS63307258A (en) | Production of thin metallic film | |
JPS63310955A (en) | Device for vapor-depositing thin metal film | |
JPS63162855A (en) | Apparatus for producing thin metallic film | |
JPS6421069A (en) | Production of thin metal film |