JPS5914640A - High frequency sputtering method - Google Patents
High frequency sputtering methodInfo
- Publication number
- JPS5914640A JPS5914640A JP12382582A JP12382582A JPS5914640A JP S5914640 A JPS5914640 A JP S5914640A JP 12382582 A JP12382582 A JP 12382582A JP 12382582 A JP12382582 A JP 12382582A JP S5914640 A JPS5914640 A JP S5914640A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- high frequency
- frequency sputtering
- electrons
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
Description
【発明の詳細な説明】 本発明は高周波スパッタリング法に関する。[Detailed description of the invention] The present invention relates to a high frequency sputtering method.
従来、高周波スパッタリング法を用い、半導体基板上に
絶縁膜を形成することは非常に困難とされていた。これ
は成膜切期にお−で半導体基板にプラズマ中のエレクト
ロンによシ基板表面に欠陥がはいるためである。Conventionally, it has been considered extremely difficult to form an insulating film on a semiconductor substrate using a high frequency sputtering method. This is because defects occur on the surface of the semiconductor substrate due to electrons in the plasma at the end of film formation.
本発明は祈る点に鑑みてなされたもので、基板上に薄膜
を形成するにあたりて基板表面に欠陥が生じない高周波
スパッタリング法を提供せんとするものである。The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a high-frequency sputtering method that does not cause defects on the substrate surface when forming a thin film on the substrate.
本発明の特徴は高周波スパッタ装置を用いて基板上に薄
膜を形成するにあたシ、上記基板を非酸化性金属からな
るメツシュで被うことである。A feature of the present invention is that when forming a thin film on a substrate using a high frequency sputtering device, the substrate is covered with a mesh made of a non-oxidizing metal.
以下実施例に基づき本発明を説明する。The present invention will be explained below based on Examples.
図は本発明を実施するための高周波スパッタ装置を原理
的に示したものである。The figure shows the principle of a high frequency sputtering apparatus for implementing the present invention.
図中、（１）は基板部であシ、該基板部は加熱ヒータ（
２］が内装され、表面に基板（３）が載Ｉｔされた基板
ホルダ（４）と、該基板ホルダの側面を囲続するアース
シールド（５）とからなる・（６）は上記基板ホルダ（
４）の表面と対向する位置に配されたターゲット保持部
であ〕、該ターゲット保持部の上記基板（３）表面と対
向するようにターゲット１７）が配されている。In the figure, (1) is the substrate section, and the substrate section is connected to the heater (
It consists of a substrate holder (4) with a substrate (3) mounted on its surface and an earth shield (5) surrounding the side surface of the substrate holder.
4), and a target 17) is disposed so as to face the surface of the substrate (3) of the target holding section.
また祈るターゲット保持部（６）の周囲にはアースシー
ルド（８１が配されると共に内部にはマグネット（９）
が装着されている。博は上記ターゲット保持部（６）を
介して高周波を供給する高周波電源、（Ｌυは上記ター
ゲット保持部【６）と基板部（１）との間に位置するり
ヤツタである。In addition, an earth shield (81) is arranged around the prayer target holding part (6), and a magnet (9) is placed inside.
is installed. H is a high-frequency power supply that supplies high-frequency waves through the target holding part (6), and Lυ is a connector located between the target holding part [6] and the substrate part (1).
同一であシ、断る装随内に低濃度のスパッタガスを充填
すると共に高周波電源ｒＩＩｌｒｃよシターゲット（７
）とアースシールド（５）との間に高周波放電を生じせ
しめる。祈る放電によシ装置内の上記ガスはイオン化さ
れると共に祈るイオンがターゲット（７）に衝突し、新
る衝突によジターゲット（７）の原子が蒸発し、その一
部が基板（３）表面に付着することによジターゲット（
７）材料からなる薄膜が形成できる。If the same is true, fill the sputtering device with low concentration sputtering gas and use the high frequency power supply rIIlrc and the target (7
) and the earth shield (5). Due to the discharge, the gas inside the device is ionized, and the ions collide with the target (7), and the atoms of the target (7) are evaporated by the new collision, and some of them are transferred to the substrate (3). Ditargeting by adhering to the surface (
7) A thin film made of the material can be formed.
本発明の実施をするための高周波スパッタ装置の特徴は
図に示す如く基板（３）を被うように基板（３）とター
ゲラ） （７３との間に非酸化性金属のメツシュａ４を
配したことである。＃駈るメツシュａ２には電位は与え
られない。The feature of the high frequency sputtering apparatus for carrying out the present invention is that a non-oxidizing metal mesh A4 is placed between the substrate (3) and the target layer (73) so as to cover the substrate (3) as shown in the figure. # No potential is applied to the running mesh a2.
祈るメツシュｔｉ２を配したことにより、高周波スパッ
タリングを実施する際に上記メツシュａ３が電子トラッ
プとして働き、基板（３）−メツシュ（１４間のプラズ
マ濃度を低減できる。By disposing the mesh ti2, the mesh a3 acts as an electron trap when high-frequency sputtering is performed, and the plasma concentration between the substrate (3) and the mesh (14) can be reduced.
これは、スパッタリング時に生じるエレクトロンの移動
度がイオンのそれに較べて大であるため、メツシュα７
Ｊｖｃはエレクトロンがチャージされ、一旦エレクトロ
ンがチャージされたメツシュ任ａＫ他のエレクトロンが
ターゲット（７）側より近づいても祈るメツシュ０り上
のエレクトロンと反撥して基板（３）に到達することが
々いためである。This is because the mobility of electrons generated during sputtering is greater than that of ions.
Jvc is charged with electrons, and once the electrons are charged, even if other electrons approach from the target (7) side, they often repel the electrons above the praying mesh and reach the substrate (3). This is for a good reason.
従って基板（３）表面に祈るプラズマにより欠陥が生じ
るという問題も解決できる。Therefore, the problem of defects occurring on the surface of the substrate (3) due to the plasma can also be solved.
また、上記メツシュ（Ｉりを非酸化性金属で構成するこ
とで、ターゲット（７；とし℃多く用いられる酸化物な
還元することを防ぐことができる。Furthermore, by forming the mesh (I) with a non-oxidizing metal, it is possible to prevent the target (7) from being reduced by oxides that are often used.
次に基板（３）としてＧａＡｓ単結晶基板な、ターゲッ
ト１７）としてｋ１２０ｓを用い、上記装置においてメ
ツシュ（１りがある場合とない場合とによシ高周波スパ
ッタリングを行りた。Next, using a GaAs single crystal substrate as the substrate (3) and K120S as the target 17), high frequency sputtering was performed in the above apparatus with and without the mesh.
面このときメツシュａりとしてはステンレスからな’）
ｓＯ，５ｔｍ角のメツシュを有したものを用い、基板（
３）表面から約ｔ５ａ＊離して配した。At this time, the mesh is made of stainless steel.
Using a 5tm square mesh, the substrate (
3) Arranged at a distance of about t5a* from the surface.
下表１は上記スパッタリング後の夫々の場合のＧａＡｓ
基板の特性を示す。Table 1 below shows the GaAs in each case after the above sputtering.
Indicates the characteristics of the substrate.
尚、上記表において基板表面のダメージ度とはスノ（ツ
タリング前とスパッタリング後の基板のフォトルミネッ
セン゛ス（ｒｒ、）の強度比菩あシ、下式で与えられる
。In the above table, the degree of damage to the substrate surface is the intensity ratio of the photoluminescence (rr) of the substrate before sputtering and after sputtering, and is given by the following formula.
上記表よ嬌らか藩如く、メツシュ１２で基板（３）を被
うてスパッタリングを行なうと基板１３ノ表面にピンホ
ールが発生することみなく、がり基板（３）の′ＰＬＰ
Ｌ強度下することなくＡＩ！２０３からなる膜な形成す
ることができる。As shown in the table above, when sputtering is performed by covering the substrate (3) with the mesh 12, no pinholes are generated on the surface of the substrate 13, and the 'PLP of the substrate (3) is
AI without reducing L strength! 203 can be formed.
ｊｌ！に上記成長膜（ＡＩ！２０．ｓ）□もメツシュａ
渇がある場合の方が良好外特性必１得起れることメ、判
明した。表２はメツシュ（１３がある場合とない場合と
の失え、）場合、おける上記成長ｇｏｏ特性２票す。jl! The above grown film (AI!20.s) □ is also mesh a
It has been found that better external characteristics are obtained when there is thirst. Table 2 shows the above growth goo characteristics in the case of mesh (loss with and without 13).
表 ２
向、本実施例では基板としてＧａＡｓを用いターゲット
としてＡ／２０ｇを用いたが、本発明はこれに限るもの
ではない。またメツシュもステンレスを用いたがこれに
限るものではなく非酸化性金属であればよい。As shown in Table 2, in this example, GaAs was used as the substrate and A/20g was used as the target, but the present invention is not limited to this. Further, although stainless steel is used for the mesh, it is not limited to this, and any non-oxidizing metal may be used.
以上の説明から明らかな如く、本発明の高周波スパッタ
リング法ではピンホールの発生及びＰＬ強度の低下を招
くことなく所望の成長膜を得ることができ、また所る成
長膜の特性も優れたものとなる。 ′As is clear from the above explanation, the high-frequency sputtering method of the present invention can obtain a desired grown film without generating pinholes or reducing the PL intensity, and also has excellent properties of the grown film. Become. ′
図は本発明を実施するための高周波スパッタリング装置
を示子原理図である。The figure is a diagram illustrating the principle of a high frequency sputtering apparatus for carrying out the present invention.
Claims (1)
するにあたシ、上記晟シを非酸化性金属からなるメツシ
ュで被うことを特徴とする高周波スパッタリング法。(1) A high-frequency sputtering method characterized in that, in forming a thin film on a substrate using a high-frequency sputtering device, the thin film is covered with a mesh made of a non-oxidizing metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12382582A JPS5914640A (en) | 1982-07-15 | 1982-07-15 | High frequency sputtering method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12382582A JPS5914640A (en) | 1982-07-15 | 1982-07-15 | High frequency sputtering method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5914640A true JPS5914640A (en) | 1984-01-25 |
| JPS6343467B2 JPS6343467B2 (en) | 1988-08-30 |
Family
ID=14870291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12382582A Granted JPS5914640A (en) | 1982-07-15 | 1982-07-15 | High frequency sputtering method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5914640A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7790004B2 (en) * | 2004-08-20 | 2010-09-07 | Jds Uniphase Corporation | Substrate holder for a vapour deposition system |
-
1982
- 1982-07-15 JP JP12382582A patent/JPS5914640A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7790004B2 (en) * | 2004-08-20 | 2010-09-07 | Jds Uniphase Corporation | Substrate holder for a vapour deposition system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6343467B2 (en) | 1988-08-30 |
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