JPS5928568A - Dry plating method - Google Patents

Abstract

PURPOSE:To obtain a ceramic thin layer free from a pinhole, by a dry plating method wherein the surface of a metal, ceramic or an org. substance is plated with ceramic in a gaseous phase according to a continuous two-stage coating process consisting of an ion plating method and a vacuum vapor deposition method. CONSTITUTION:In applying the thin layer coating of ceramic to the surface of a metal, ceramic or an org. substance in a gaseous phase, ceramic is coated at first by an ion plating method. Ionization at this time is performed by an electron beam irradiating method, a DC electric field method and a high frequency exciting method and the thickness of the coating thin layer is adjusted to 0.1- 0.5mum. In the next step, ionization is interrupted and coating is subsequently carried out continuously by a vacuum vapor deposition method. The film thickness at this time is adjusted to about 1.7mum.

Description

[Detailed Description of the Invention] This invention relates to a dry plating method, and relates to an improvement in an ion plating method in which a thin layer of ceramic is coated on the surface of a metal, ceramic, or organic material in a gas phase. This is a dry plating method characterized by sequentially performing two-step coating of ceramic on the surface of an organic substance in a gas phase using an ion plating method and a vacuum evaporation method.

Adhesion between metal and ceramic is impossible unless the bonding interface is sufficiently activated, and even if ceramic is coated on metal by vapor deposition, the adhesion to the substrate is insufficient. In this way, the ion derating method is an extremely effective coating method for materials for which it is difficult to obtain good adhesion, such as ceramics. Yo υ,
It is easy to form a film as granular crystals, and this is one of the reasons why so-called pipe-shaped pinholes are formed.

For this reason, the pipe-shaped pinholes do not have a large effect on the properties of the film, so when used in fields that require corrosion-resistant materials or high-level electrical insulation, the ceramic film thickness becomes excessive and productivity is reduced. It has also become a big problem.

The present invention aims to eliminate such drawbacks and provide a method for obtaining a ceramic thin layer without pipe-like pinholes by dry plating.

That is, when obtaining a ceramic thin film layer on the surface of metals, ceramics, organic materials, etc., this invention first forms a thin layer of 0.1 to 0.5 pm in a gas phase using an ion blasting method, and then ionizes the material. Then, coating is performed using a vacuum evaporation method.

To specifically explain the method of this invention, the thickness is 0.25-
The tape was heated to 200°C on a 42 alloy (Fe4296Nj-) T-pipe under an acid i pressure of 4 x 10' TOrr, Aj? Altos was deposited on a zOs sintered body by electron beam heating.

Initially, high frequency (18.56MHz) 200W was used for vapor deposition.
was applied to ionize a part of the evaporated substance (AI!tOs) to form a film of 18 μm. After that, the high frequency power was turned off and a film of 1.7 μm was formed under normal vacuum evaporation conditions. went.

As shown in the drawing, the resulting AfzO++ coating film on the 42 alloy tape showed an approximately 20% improvement in DC dielectric strength voltage compared to that obtained by ion derating over the entire thickness of 2-Opm, and also had a DC dielectric strength of 90%. Good results were also obtained in the adhesion test by repeated bending.

Furthermore, from the relationship between the AJzOs film thickness and the DC dielectric strength voltage shown in the drawings, it is clear that current leakage occurs in the method of this invention.
, the effect of reducing pipe-like pinhole p was observed.

In this invention, the film thickness by ion plating is specified to be 0.1 to 0.5 μm, because if it is less than that, ion grating will not be effective due to adhesion, and if it is more than 9.5 lbm, pipe-shaped This is because the growth of holes progresses and it becomes difficult to suppress this in subsequent vacuum evaporation.

As mentioned above, this invention was originally a coating that took advantage of the characteristics of ion plating, and it was possible to achieve a coating with good adhesion due to the cleaning effect of the substrate by the ion pump and the presence of active vapor deposition particles called ionized particles. After that, normal vacuum deposition is performed, so the formation of shibinho μ is prevented by forming random and isotropic precipitated particles with little directionality of crystal growth.

As a method for ionizing the evaporated particles, any of the commonly used methods such as the electron beam irradiation method, the high frequency excitation method, or the direct current electric field method can be used, and these methods can also be used in combination.

The method of the present invention can be used as a surface coating method for parts requiring corrosion resistance, chemical resistance, and electrical insulation, and for imparting electrical insulation to various corrosion-resistant materials and metal materials.

Specifically, it is most suitable for use in ceramic-coated metals as semiconductor substrate materials.

[Brief explanation of drawings]

The drawing is a chart showing the difference in DC dielectric strength between the A/gos film formed by the method of the present invention and the A4zOg film formed by the ion plating method. -359-

Claims (1)

[Claims] (1) When coating a thin layer of ceramic on the surface of a metal, ceramic, or organic substance in a gas phase, first coat the ceramic by an ion plating method, then interrupt ionization, A dry plating method that is characterized by successive coating using a vacuum deposition method. (2) The dry plating method according to claim 1, characterized in that the coating thin layer formed by the ion plating method has a thickness of 0.1 to 0.5 μm. (8) Ionization in the ion plating method 2. The dry plating method according to claim 1, wherein plating is carried out by an electron beam irradiation method, a direct current electric field method, or a high frequency excitation method.