JPS59145531A - Vapor-phase wafer processing device - Google Patents

Abstract

PURPOSE:To contrive increase in processing capacity as well as to cut down the cost of processing by a method wherein a wafer is rotated in the state where it is placed in a radially standing position, and at least a pair of circular arc formed plasma generating electrodes are provided. CONSTITUTION:A wafer jig 19 consisting of doughnut-shaped disc is placed on a susceptor 15, a plurality of placing grooves 20 are radially provided on the upper surface of said wafer jig 19, and wafers 21 are placed in upright position with their circumference partially inserted in the placing groove 20. On the other hand, a bell jar cover 24 consisting of a cylindrical body 22 and a ceiling 23 is detachably installed on the upper part of a bell jar main body 11. On the ceiling 23 of the bell jar cover 24, electrodes 25 and 26 consisting of a pair of semicircular arc plates are attached. These electrodes 25 and 26 are extended along the outer side of the ring formed by the wafer to be radially placed on the wafer jig 19. Also, said electrodes 25 and 26 are connected to an RF oscillator 27.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vapor phase wafer processing apparatus such as a plasma coating production apparatus.

One of the manufacturing processes for semiconductor devices, etc. is the process of forming a nitride film (nitride film) on a silicon thin film (wafer). Conventionally, plasma film generation equipment has been used as the technology for forming this nitride film. ing.

As shown in FIG. 4, this conventional plasma coating generation device is formed by a belljar body 1, a belljar body 2 detachably provided on the belljar body 1, and a belljar body 1 and a belljar body 2. A flat susceptor 4 that also serves as an electrode is disposed below the reaction space 3 inside the bell jar, a gas supply pipe 5 is disposed on the bottom side of the susceptor 4, and a gas supply pipe 5 is disposed on the bottom side of the susceptor 4. A heater 7 is installed to heat the semiconductor thin plate (Ueno) 6 on the susceptor 4, and
It consists of a plate-shaped electrode 8 disposed parallel to the belljar body 1, an RF oscillator 9 that applies high frequency waves between the electrode 8 and the susceptor 7, and an exhaust port 10 provided at the bottom of the belljar body 1.

When forming a film on Ueno, the Ueno 6 is placed horizontally on the susceptor 4, and then the reaction space 3 is evacuated and the Ueno 6 is heated by the heater 7. In this state, a high frequency current is applied between the susceptor 4 and the electrode 8 by the RF oscillator 9 to generate plasma. At the same time, a reaction gas is supplied from the gas supply pipe 5 into the reaction space 3 to form a film on the surface of the wafer 6. For example, when forming a void film, monosilane (S II-L
) and nitrogen (N2) and monosilane and ammonia (N2).
H4) or monosilane, ammonia, nitrogen, etc. are supplied.

However, such conventional plasma coating production apparatuses have a drawback of extremely low throughput. That is, since the wafers placed on the susceptor are arranged horizontally, for example, only 25 wafers with a diameter of 3 inches can be placed at one time.

Therefore, it may be possible to increase the processing capacity by standing the wafer on this susceptor, but this will not only make the reaction conditions of the wafer and each part non-uniform, but also cause foreign matter to adhere to the electrode surface. This is likely to be affected by non-uniform surface conditions such as surface irregularities, resulting in non-uniform coating thickness of the wafer. For this reason, conventional plasma film generation apparatuses have only adopted a structure in which the wafer is placed horizontally on a susceptor.

Therefore, an object of the present invention is to increase the processing capacity of a vapor phase wafer processing apparatus.

In order to achieve this purpose, one embodiment of the present invention is as follows:
The susceptor disposed in the bell jar rotates with the wafers radially erected, and at least one pair of arc-shaped plasma generation electrodes is provided on the outside of the ring of wafers arranged annularly on the susceptor. The present invention will be described in detail below with reference to Examples.

FIG. 1 shows an embodiment of the plasma coating production apparatus of the present invention. The belljar main body 11 is shown in the figure. An exhaust pipe 13 connected to a vacuum pump 12 is provided on the bottom surface of the bell jar body 1.

Further, a tubular rotating shaft 14 extends through the center of the bell jar main body 11. This rotating shaft 14 is rotated by a motor (not shown) or the like. Further, a disk-shaped susceptor 15 is attached to the upper part of the rotating shaft 14. Further, a reaction gas supply port 16 is provided at the center of the susceptor 15 . This reaction gas supply port 16 communicates with a conduit 17 in the pipe of the rotary shaft [4], and this conduit 17 communicates with a gas controller [8] which controls and sends the reactant gas. On top of the susceptor 15 is a wafer jig 1 made of a donut-shaped disk.
9 is placed. On the upper surface of this wafer jig 19, as shown in FIG. A plurality of mounting grooves 20 are provided radially, and the wafer 21 is stood up so that one peripheral edge thereof is inserted into the mounting grooves 20.

On the other hand, there is a cylindrical body 22 and a ceiling 2 at the top of the belljar body.
A bell jar chopstick rest 24 consisting of 3 is detachably attached. Electrodes 25 and 26 made of a pair of semicircular arc plates are attached to the ceiling 23 of the bell jar lid 24. These electrodes 25, 26 extend around the outside of the ring created by the wafer placed radially on the wafer jig 19. Further, these electrodes 25 and 26 are connected to an RF oscillator 27. Further, the cylindrical body 22 of the bell jar lid body 24 is made of a transparent material such as quartz.
A heating lamp 28 for heating the wafer 21 is disposed on the outer periphery of the wafer 2 .

Next, film production by such a plasma film production apparatus will be explained. First, the wafer 21 is inserted into the mounting groove 20 of the wafer jig 19, and the wafer jig 19 is mounted on the susceptor 15. Next, close the belljar lid 24 and
After this, the air in the reaction space 29 of the bell jar is removed by the vacuum pump 12.
The reaction space 29 is kept at a constant degree of vacuum. Thereafter, the susceptor 15 is rotated at a constant speed.

In addition, the heating lamp 28 is turned on to heat the wafer 21, and the gas controller 18 is turned on to heat the reaction space 21.
If it is within 9, N2. Reactive gases such as NH3 and SiH4 are fed. At the same time, a surface frequency voltage is applied to the pair of electrodes 25 and 26 by the RF oscillator 27, and the reaction space 29 is
A plasma state is created within the wafer 21, and a nitride film is formed on the surface of the wafer 21.

According to this embodiment, the wafer 21 is connected between the pair of electrodes.
Since it moves at a constant speed, a uniform nitride film can be obtained. Further, in this embodiment, the wafer 21
Since the wafers are placed radially on the wafer jig 9, the number of processes per batch becomes larger than in the past. That is, if the diameter of the bell jar is the same as that of the conventional apparatus, the conventional apparatus can accommodate, for example, 25 wafers with a diameter of 3 inches at a time, whereas the apparatus of this embodiment according to the present invention can accommodate 100 to 150 wafers at a time. Can be accommodated at once.

However, although the processing time is slightly longer than that of conventional equipment,
Even so, the overall processing capacity is about five times that of conventional devices.

Note that the present invention is not limited to the above embodiments. for example,
As shown in FIG. 3, electrodes 30 and 31 for plasma generation may also be provided inside the ring created by the Ueno 21 group placed on the Ueno jig 19. In addition, in the device of the present invention, the coating is not limited to nitride, but may be polysilicon formed by plasma treatment, 5in2. P.S.
This also applies to G (phosphosilicate glass).

As described above, according to the gas phase sea urchin processing apparatus of the present invention, the number of objects to be processed can be accommodated much larger than that of conventional apparatuses, so it is possible to increase processing capacity and reduce processing costs. can.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a plasma film generating apparatus according to an embodiment of the present invention, FIG. 2 is a partially cross-sectional plan view showing the relationship between a wafer and an electrode, and FIG. 3 is a cross-sectional view of a plasma film generating apparatus according to another embodiment of the present invention. FIG. 4 is a partial cross-sectional plan view showing the relationship between the wafer and the electrode, and FIG. 4 is a cross-sectional view of a conventional plasma film production apparatus. 1...Belljar body, 2...Belljar lid body, 3...
Reaction space, 4... Susceptor, 5... Gas supply pipe, 6
... Wafer, 7... Heater, Death... Electrode, 9...
RF oscillator, 10...Exhaust port, 11...Belljar body, 12...Vacuum pump, 13...Exhaust pipe, 14...
Rotating shaft, 15...Saseli, 16...Reaction gas supply port, 17...Guiding hole, 18...Gas controller, 1
9... Wafer jig, 2o... Mounting groove, 21... Wafer, 22... Cylindrical body, 23... Ceiling, 24... Belljar lid body, 25. 26... Electrode, 27 ...RF oscillator, 28...Heating lamp, 29...Reaction space, 30.3
1. Electrode. Figure 1 Figure 3

Claims (1)

[Claims] 1. A vapor phase wafer processing apparatus characterized in that a plurality of wafers to be processed are processed in a radially standing state.