JPS59143356A - Power semiconductor module - Google Patents
Power semiconductor moduleInfo
- Publication number
- JPS59143356A JPS59143356A JP1599284A JP1599284A JPS59143356A JP S59143356 A JPS59143356 A JP S59143356A JP 1599284 A JP1599284 A JP 1599284A JP 1599284 A JP1599284 A JP 1599284A JP S59143356 A JPS59143356 A JP S59143356A
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- light emitting
- transistor
- resistor
- hand
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 230000000295 complement effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 229910052614 beryl Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Bipolar Transistors (AREA)
- Led Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は、一つの容器と、それぞれ発光ダイオードを介
して制御可能で、容器の中に配置された少なくとも二つ
の半導体素子と、容器から引き出す主端子および主端子
に対して絶縁された制御端子とを備えた電力用半導体モ
ジュールに関する。DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to a container, at least two semiconductor devices each controllable via a light emitting diode and arranged in the container; The present invention relates to a power semiconductor module including a main terminal and a control terminal insulated from the main terminal.
上述の種類の電力用半導体モジュールは公知である。各
半導体素子の個々の制御のためには、半導体素子に属す
る発光ダイオードは同様に個々に制御可能でなければな
らない。そのために発光ダイオードごとに少なくとも一
つの制御端子およびすべての発光ダイオードに共通な制
御端子が必要であり、二つの制御可能な半導体素子と二
つの発光ダイオードを備えた最も簡単な場合にはそれ故
三つの制御端子が必要である。電力用半導体モジュール
に対する容器はしかしその寸法が固定されており、多く
は絶縁技術上の根拠から二つだけの制御端子が許される
。Power semiconductor modules of the type mentioned above are known. For individual control of each semiconductor component, the light-emitting diodes belonging to the semiconductor component must likewise be individually controllable. For this purpose, at least one control terminal per light-emitting diode and a control terminal common to all light-emitting diodes are required; in the simplest case with two controllable semiconductor elements and two light-emitting diodes, therefore three Two control terminals are required. Enclosures for power semiconductor modules, however, have fixed dimensions and often allow only two control terminals for reasons of insulation technology.
ｒ発明の目的〕
本発明は、上述の種類の電力用半導体モジ一一ルを、半
導体素子の個々の制御が二つだけの制御端子で可能であ
るように改善することを目的とする。OBJECTS OF THE INVENTION The object of the invention is to improve a power semiconductor module of the above-mentioned type in such a way that individual control of the semiconductor components is possible with only two control terminals.
本発明は、二つの制御端子を備え、発光ダイオードの少
なくとも二つが逆並列に接続され・両制御端子の間に電
気的に挿入されていることを特徴とする。The present invention is characterized in that it includes two control terminals, and that at least two of the light emitting diodes are connected in antiparallel and electrically inserted between both control terminals.
〔発明の実施例］
本発明を第１図ないし第４図を引用して詳細に説明する
。電力用半導体モジュールは、金属板ｌ。[Embodiments of the Invention] The present invention will be explained in detail with reference to FIGS. 1 to 4. Power semiconductor modules are made of metal plates.
絶縁材料枠体２および蓋体３からなる容器を有する。容
器の内部に二つの制御可能な半導体素子５゜６が配置さ
れ、それは底板１と熱的に結合している。底板１と半導
体素子の間には、熱伝導性であるが買気絶縁性である例
えば酸化べｌ ＩＪウムからなる基板４を備えろとよい
。半導体素子５．６は主端子７，８．９によって接続さ
れている。半導体素子５．６に、公知の方式で半導体素
子５．６を制御する発光ダイオード１０もしくは１１が
属している。半導体素子はサイリスタ構造であってもト
ランジスタ構造であってもよい８発光ダイオードは、ｐ
ｎ接合をもつダイオードでもまたレーザダイオードでも
よい。発光ダイオード］０ 、１１は逆並列接続され、
その両端子は蓋体３に配置された制御端子１２ 、１３
に共通接続される。It has a container consisting of an insulating material frame 2 and a lid 3. Two controllable semiconductor elements 5 and 6 are arranged inside the container, which are thermally coupled to the base plate 1. Between the bottom plate 1 and the semiconductor element, it is preferable to provide a substrate 4 made of, for example, beryl oxide, which is thermally conductive but has an electrically insulating property. The semiconductor element 5.6 is connected by main terminals 7, 8.9. A light-emitting diode 10 or 11 is assigned to the semiconductor component 5.6, which controls the semiconductor component 5.6 in a known manner. The semiconductor element may have a thyristor structure or a transistor structure.8 A light emitting diode is a p
It may be a diode with an n-junction or a laser diode. Light emitting diodes] 0 and 11 are connected in antiparallel,
Both terminals are control terminals 12 and 13 arranged on the lid body 3.
Commonly connected to.
対応する回路図が第２図に図示されている。機能の同じ
部分には第１図と同じ符号が付されている。半導体素子
５，６の制御のためには、一方または他方の極性のイン
パルスが制御端子１２ 、１３に与えられる。制御端子
１２の電圧が制御端子１３の電圧に対１７て正であるな
らば、ＬＥＤｌｌが光を放射し、半導体素子６がクイ９
チオンされる。制御端子１３の電圧が点１２に対して正
であるならば、発光ダイオード１０が光を放射し、半導
体素子５がスイッチオンさね、る。A corresponding circuit diagram is illustrated in FIG. The same functional parts are given the same reference numerals as in FIG. For controlling the semiconductor elements 5, 6, impulses of one or the other polarity are applied to the control terminals 12, 13. If the voltage at the control terminal 12 is positive 17 relative to the voltage at the control terminal 13, the LEDll emits light and the semiconductor element 6
be treated. If the voltage at control terminal 13 is positive with respect to point 12, light-emitting diode 10 emits light and semiconductor component 5 is switched on.
一つのアームあたり各１個の半導体素子６．５のかわり
に、例えば直列に接続された複数の半導体素子が用いら
れることがある。そのときはアームあたりの発光ダイオ
ードの数も相応して高められろ。上述の電力用半導体モ
ジコ−−ルの和声は、逆方向の過電圧が発光ダイオード
の逆並列接続のために逆並列接続ダイオードの順電圧に
制限されるから、発光ダイオードが逆方向の過電圧に対
して保睦されていることにある。Instead of one semiconductor element 6.5 per arm, for example, a plurality of semiconductor elements connected in series may be used. In that case, the number of light emitting diodes per arm should be increased accordingly. The harmony of the power semiconductor modules described above is that the overvoltage in the reverse direction is limited to the forward voltage of the antiparallel connected diodes due to the antiparallel connection of the light emitting diodes. The reason is that it is protected.
この買方用半導体モジュールは、第３および第４図に示
した制御回路によって有効に駆動できる。This buyer semiconductor module can be effectively driven by the control circuit shown in FIGS. 3 and 4.
第３図に示した回路は同じ電源につながる二つのトラン
ジスタ１４ 、１５を有し、それらはエミッタ側にある
いはコレクタ側にそれぞれ抵抗が直列に接（５）
続されている。逆並列接続ダイオード１０ 、１１は、
その場合一方ではトランジスタ１４とその抵抗との間の
結合点に、他方ではトランジスタ１５とその抵抗との間
の結合点につなかれる。トランジスタ１４を制御すれば
発光ダイオード１０が光を放射し、一方トランジスタ１
５を制御すれば発光ダイオード１１がオンにスイッチさ
れる。The circuit shown in FIG. 3 has two transistors 14 and 15 connected to the same power source, each of which has a resistor connected in series (5) on its emitter side or collector side. The anti-parallel connected diodes 10 and 11 are
In this case, it is connected on the one hand to the connection point between transistor 14 and its resistor, and on the other hand to the connection point between transistor 15 and its resistance. Controlling transistor 14 causes light emitting diode 10 to emit light, while transistor 1
5, the light emitting diode 11 is switched on.
半導体素子５．６のスイッチング時間の短縮は・スイッ
チ中の抵抗が破線で示したＲＣの組合わせによって補わ
れることによって得られる。その時定数は、増幅さｎた
スイッチング′ｄ流がスイッチング位相の間に流れるよ
うな大きさにされる。それによってスイッチング損失が
最小にされ得る。A reduction in the switching time of the semiconductor component 5.6 is obtained in that the resistance in the switch is supplemented by an RC combination shown in dashed lines. The time constant is dimensioned such that the amplified switching 'd current flows during the switching phase. Switching losses can thereby be minimized.
半導体素子５．６の準同時スイッチングは、両トランジ
スタ１４ 、１５が１８００の相互位相差を有する高周
波成圧ｕｌおよびｕ２によって駆動されるときに達せら
れる。交流電圧の周波数は、半導体素子５．６の間に現
れてもよい最大許容スイッチング遅れをｔｇとしたとき
％ｔｇより大きくなければならない。第３図に示したコ
レクタ・ベース回路は、（６）
類似の作動様式のエミッタ・ベース回路によって置き換
えることができる。Quasi-simultaneous switching of the semiconductor component 5.6 is achieved when both transistors 14, 15 are driven by high-frequency voltage components ul and u2 with a mutual phase difference of 1800. The frequency of the alternating voltage must be greater than %tg, where tg is the maximum permissible switching delay that may appear between the semiconductor components 5.6. The collector-base circuit shown in FIG. 3 can be replaced by an emitter-base circuit of (6) similar mode of operation.
第４図による回路構成は、個々のトランジスタが相補ト
ランジスタ対１６ 、１７によって置き換えられている
点が第３図によるものと異なっている。The circuit arrangement according to FIG. 4 differs from that according to FIG. 3 in that the individual transistors are replaced by complementary transistor pairs 16, 17.
各列の相補トランジスタはその負荷経路、すなわちコレ
クタ・エミッタ経路に関して直列に接続されている。発
光ダイオード１０ 、１１はその場合、一方では対１６
の一つのトランジスタの負荷経路と他のトランジスタの
負荷経路の間の結合点に、他方ではトランジスタ対１７
の対応する点につながれる。The complementary transistors in each column are connected in series with respect to their load paths, ie, collector-emitter paths. The light emitting diodes 10 , 11 are then paired on the one hand with the pair 16
at the connection point between the load path of one transistor and the load path of the other transistor, on the other hand, the transistor pair 17
are connected to corresponding points.
トランジスタには、第３図に対応して一つあるいはそれ
ぞれ一つの抵抗あるいは一つのＲＣの組合わせを介して
電圧が印加される。それらは第３図に示した装置と同様
に単一インパルスあるいは１８０゜だけ位相のすれた二
つの交流電圧によって制御できる。A voltage is applied to the transistors, corresponding to FIG. 3, via one or each one resistor or one RC combination. They can be controlled by a single impulse or by two alternating voltages 180 DEG out of phase, similar to the device shown in FIG.
示されたバイポーラトランジスタのカワリに、ＭＯＳ−
ｄ刃用トランジスタも用いることができる。In contrast to the bipolar transistor shown, MOS-
A d-blade transistor can also be used.
ＭＯＳトランジスタの負荷経路は、そのときソース領域
−チャネル−ドレイン領域の経路によって定義される。The load path of the MOS transistor is then defined by the source region-channel-drain region path.
ｒ発明の効果〕
本発明はそれぞれ発光ダイオードで制御される少なくと
も二つのサイリスタあるいはトランジスタなどの半導体
素子を有する電力用半導体モジュールの少なくとも二つ
の発光ダイオードを逆並列接続して、各発光ダイオード
をずらして発光させるものであり、これにより、発光ダ
イオードに接続される制御端子は二つだけですみ、従来
三つの制御端子を必要としたのに比して容器を小さくす
ることができる。この電力用半導体モジュールの二つの
半導体素子は、例えば前述のようなプッシュプルモード
のトランジスタスイッチ回路を用いて駆動することによ
り、はとんど同時に駆動することも可能である。r Effects of the Invention] The present invention provides a power semiconductor module having at least two semiconductor elements such as at least two thyristors or transistors each controlled by a light emitting diode, in which at least two light emitting diodes are connected in antiparallel, and each light emitting diode is shifted. As a result, only two control terminals are required to be connected to the light emitting diode, and the container can be made smaller compared to the conventional case which required three control terminals. The two semiconductor elements of this power semiconductor module can be driven almost simultaneously by driving them using, for example, a push-pull mode transistor switch circuit as described above.
第１図は本発明の一実施例の断面図、第２図は第１図に
示した実施例の回路図、第３図および第４図は本発明に
よる電力用半導体モジュールの駆動のための二つの回路
構成を示す回路図である。
１・・・底板、２・・・枠体、３・・・蓋体、５．６・
・・半導体素子、１０ 、１１・・・発光ダイオード、
１２ 、１３・・・制御端子、１４ 、１５・・・トラ
ンジスタ、１６．１７・・・トランジスタ対。
（９）
２
ＩＧ １FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is a circuit diagram of the embodiment shown in FIG. 1, and FIGS. 3 and 4 are diagrams for driving a power semiconductor module according to the present invention. FIG. 3 is a circuit diagram showing two circuit configurations. 1... Bottom plate, 2... Frame body, 3... Lid body, 5.6.
... Semiconductor element, 10, 11... Light emitting diode,
12, 13... Control terminal, 14, 15... Transistor, 16.17... Transistor pair. (9) 2 IG 1
Claims (1)
御可能で、容器の中に配置される少なくとも二つの半導
体素子と、容器から引き出す主端子および主端子に対し
て絶縁された制御端子とを備７Ｊ、たものにおいて、二
つの側視端子を備え、発光ダイオードの少なくとも二つ
が逆並列ｌこ接続され、両制御端子の間に電気的に挿入
されたことを特徴とする電力用半導体モジー−ル。 ２、特許請求の範囲４１項記載のモジュールにおいて、
制御のためにそれぞれ一つの抵抗を介して電源につなが
る二つのトランジスタが備えられ、逆並列接続の発光ダ
イオードは一方では第一の抵抗ト第一のトランジスタと
の間に、他方では第二の抵抗と第二のトランジスタとの
間に接続されたことを特徴とする電力用半導体モジュー
ル。 ３）特許請求の範囲第１項記載のモジュールにおいて、
制御のためをこ抵抗を介して電源につながる二ツノトラ
ンジスタ対を備え、そのトランジスタ附はその負荷経路
に関して直列に接続され、電気的に接続された制御入夫
部を有する二つの相補トランジスタからなり、かつ逆並
列接続の発光ダイオードが一方では第一の対のトランジ
スタの負荷径路の結合点に、他方では第二の対のトラン
ジスタの負荷経路の結合点に接続されたことを特徴とす
る電力用半導体モジュール。[Claims] ■) One container, at least two semiconductor devices each controllable via a light emitting diode and arranged in the container, and a main terminal and a main terminal to be drawn out from the container. 7J, which is equipped with two side-viewing terminals, and at least two of the light emitting diodes are connected in antiparallel and electrically inserted between the two control terminals. Characteristic power semiconductor module. 2. In the module according to claim 41,
For control purposes, two transistors each connected to the power supply via a resistor are provided, and the anti-parallel connected light emitting diodes are connected between the first resistor and the first transistor on the one hand and the second resistor on the other hand. and a second transistor. 3) In the module according to claim 1,
It is equipped with a pair of two-horn transistors connected to the power supply through a resistor for control, and the transistors are connected in series with respect to the load path, and consist of two complementary transistors having an electrically connected control joint. , and the anti-parallel connected light emitting diodes are connected on the one hand to the connection point of the load paths of the transistors of the first pair and on the other hand to the connection point of the load paths of the transistors of the second pair. semiconductor module.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833303103 DE3303103A1 (en) | 1983-01-31 | 1983-01-31 | Power semiconductor module and method of triggering it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59143356A true JPS59143356A (en) | 1984-08-16 |
Family
ID=6189622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1599284A Pending JPS59143356A (en) | 1983-01-31 | 1984-01-31 | Power semiconductor module |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS59143356A (en) |
| DE (1) | DE3303103A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7208833B2 (en) | 2001-01-17 | 2007-04-24 | Matsushita Electric Industrial Co., Ltd. | Electronic circuit device having circuit board electrically connected to semiconductor element via metallic plate |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4965710A (en) * | 1989-11-16 | 1990-10-23 | International Rectifier Corporation | Insulated gate bipolar transistor power module |
| US5650608A (en) * | 1991-12-05 | 1997-07-22 | Tv Interactive Data Corporation | Method and apparatus for generating ratiometric control signals |
| US5847694A (en) * | 1991-12-05 | 1998-12-08 | Tv Interactive Data Corporation | Apparatus for generating a signal indicative of the position of a movable element in the apparatus |
| US5818037A (en) * | 1996-04-09 | 1998-10-06 | Tv Interactive Data Corporation | Controller using a flexible element to vary light transferred to a photosensitive element |
-
1983
- 1983-01-31 DE DE19833303103 patent/DE3303103A1/en not_active Withdrawn
-
1984
- 1984-01-31 JP JP1599284A patent/JPS59143356A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7208833B2 (en) | 2001-01-17 | 2007-04-24 | Matsushita Electric Industrial Co., Ltd. | Electronic circuit device having circuit board electrically connected to semiconductor element via metallic plate |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3303103A1 (en) | 1984-08-02 |
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