JPS59141236A - Preparation of molten material for liquid epitaxial growth - Google Patents
Preparation of molten material for liquid epitaxial growthInfo
- Publication number
- JPS59141236A JPS59141236A JP1518883A JP1518883A JPS59141236A JP S59141236 A JPS59141236 A JP S59141236A JP 1518883 A JP1518883 A JP 1518883A JP 1518883 A JP1518883 A JP 1518883A JP S59141236 A JPS59141236 A JP S59141236A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- ampul
- ampoule
- growth
- melted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Abstract
Description
【発明の詳細な説明】
(al 発明の技術分野
本発明は液相エヒタキシャル成長用メルト材杓ハ歯11
≧士圧w1mh 銭f−助迭T穆によって組成誤差の
少々い複数個の同一組成を有する液相エピタキシャル成
長用成型メルト材料を同時に得ることができる製造方法
に関するものである。Detailed Description of the invention
≧shiatsuw1mh This invention relates to a manufacturing method that can simultaneously obtain a plurality of molding melt materials for liquid phase epitaxial growth having the same composition with slight compositional errors.
(b) 技術の*景
一般に赤外線検知素子等の光電変換素子を形成する材料
として、エネルキーギャップの狭い水銀。(b) Technology Trends Generally, mercury, which has a narrow energy gap, is used as a material for forming photoelectric conversion elements such as infrared sensing elements.
カドミクム、テルル(Hg1−XCdXTe)等の化合
物牛専体結晶が用いられている。このような例えばHt
21−x 0dxTeからなる単結晶は1通常石英アン
プルを傾ける方式のチンピンク(Tipping)式成
長法やカーボン製のスライドボートを用いたボートスラ
イド(Boa、t 5lide)式成長法などの液相エ
ヒタキシャル成長法によって例えばテルル化カドミウム
(cdTo)の結晶基板上に結晶層として形成している
。ところで上記のような成長方法によって0dTe結晶
基板上に所望とする均一な組成の也1−xCTX′re
からなる結晶層を成長させるには、前記アンプルあるい
はスライダのメルト材料収容部内に収容するHg1−x
Cd、 Teからなる成長用メルト材料を予めよく溶融
化合させて均一な化合物にしておく必要がある。Cattle-only crystals of compounds such as cadmicum and tellurium (Hg1-XCdXTe) are used. For example Ht
A single crystal consisting of 21-x 0dxTe is usually grown by liquid phase epitaxial growth, such as the tipping method, which involves tilting a quartz ampoule, or the boat slide (Boa, 5lide) method, which uses a carbon slide boat. For example, it is formed as a crystal layer on a crystal substrate of cadmium telluride (cdTo) by a method. By the way, by the above-mentioned growth method, a desired uniform composition of 1-xCTX're can be grown on a 0dTe crystal substrate.
In order to grow a crystal layer consisting of
It is necessary to thoroughly melt and combine the melt materials for growth consisting of Cd and Te in advance to form a uniform compound.
(C) 従来技術と間伽点
従来、上記した易蒸発性のHgを舌むHE’、 1−
XCdXTeからなる液相エピタキシャル成長用1ルト
桐料を調合し、形成するには2例えば石′iI8製のア
ンフル内に、 Hg、Cd、Telの素材を一成長工
程分館となるよう、それぞれ所定止知抄知して光増し、
該アシフル内をυ1り、した彼、その開口部を気密に封
止する。そしてこのアンプルを所定温度に加熱して内部
のメルト素材を充分に溶融し均一に化合きせた後、該ア
ンプルを急冷してアンフル内の材料を凝固せしめてHg
1−xCdxTeの化合物メルト材料を形成していた。(C) Discrepancies between the conventional technology and the conventional technology, HE', which uses the above-mentioned easily evaporable Hg, 1-
For liquid phase epitaxial growth consisting of Knowing and increasing the light,
Once inside the asifle, the opening is hermetically sealed. After heating this ampoule to a predetermined temperature to sufficiently melt the melt material inside and uniformly combine it, the ampoule is rapidly cooled to solidify the material inside the ampoule and release Hg.
A compound melt material of 1-xCdxTe was formed.
しかし、このように成長用メルト材料を−成し工程性か
単位づつ形成する方法にあっては、形成単位ごとの成長
用メルト材料の組成比に僅かながら誤差が生じ、再現性
が悪いといった問題があると共に極めて非能率な方法で
あった。このため1反に機数成長分の、成長用メルト材
料を再現性よく形成する方法が要望されていた。However, in this method of forming the melt material for growth one unit at a time, there is a problem that there is a slight error in the composition ratio of the melt material for growth for each forming unit, and the reproducibility is poor. However, it was also an extremely inefficient method. For this reason, there has been a need for a method for forming a growing melt material for one roll with good reproducibility.
(d)発明の目的
本発明は上記した点を除法するため、1回のメルト材料
形成工程において襟数成長]°捏分の成長用メルト材刺
を再現性よ<#隼に形成し拘る新規な液相エビクキシャ
ル成長用メルト桐刺の裂地方法を提供することを目的と
するものである。。(d) Purpose of the Invention In order to solve the above-mentioned problems, the present invention is a novel method that improves the reproducibility of melt material spines for growth in one melt material forming process. It is an object of the present invention to provide a method for cleaving melt paulownia thorns for liquid phase eviaxial growth. .
(e) 発明の構成
そしてこの目的は本発明によれば1石英アンプル内の長
手方向の上部の領域に複数の仕9Jり句き成型容器を下
向きに挿設すると共に、その下方の領域にメルト素材を
収容し、該アンプルを気密に封止した後、該アンプルを
所定温度に加熱して内部の前記メルト素材を溶融混合し
、この状態で前記アンプルを回転させて、前記溶融状態
のメルト桐粕を下方に反転した上記複数の仕切り付き成
型容器内に流入せしめ、その後ろ操アンプルを冷却して
前記成型容器内に冷面した沙数個の成型メルト材料を形
成することを特徴とする液相エピタキシャル成長用メル
ト材料の!8!造力法を提供することによって達成され
る。(e) Structure and object of the invention According to the present invention, a plurality of molded containers are inserted downward in the upper longitudinal region of a quartz ampoule, and a melt-molded container is inserted in the lower region. After accommodating the material and hermetically sealing the ampoule, the ampoule is heated to a predetermined temperature to melt and mix the melt material inside, and in this state, the ampoule is rotated to release the molten paulownia. A liquid characterized in that the lees is allowed to flow into the molding container with a plurality of partitions which is turned upside down, and the rear ampoule is cooled to form a molded melt material with a cold surface in the molding container. Melt materials for phase epitaxial growth! 8! This is achieved by providing a force-building method.
(f) 発明の実施例 −
以下図面を用いて本発明の製造方法の実施例について詳
細に説明する。(f) Examples of the invention - Examples of the manufacturing method of the invention will be described in detail below with reference to the drawings.
第1図乃至第4図は本発明に係る液相エピタキシャル成
長用メルト材料の製造方法の一実施例を説明する斜視図
および要部に略断面図である。FIGS. 1 to 4 are a perspective view and a schematic cross-sectional view of essential parts, illustrating an embodiment of the method for manufacturing a melt material for liquid phase epitaxial growth according to the present invention.
まず第1図に示すように複数(この場合5枚)の仕切り
2を付設した半円筒状の高純良石英製メルト成!!i!
容拠1を用意する。次いで、第2図に示すように、上記
メルト成型容器1の外@命が精度よく嵌合する内径を有
する高純度石層製アンプル3内の上半分の領域に、前記
メルト成型容部1を逆さまにした形で嵌入配置する。そ
して該アンプル3内の下半分の空間*#に9例えば易蒸
発性のHgと、 O(1,Teを規定の組成比で所定
鋤秤如した成長用メルト集材、即ち本失施例においては
、すくなくとも6成長工程分、秤知した成長用メルト累
桐4を充填する。3次いでそのアンプル3内を真空に排
気した後、該アンプル3の開口部を溶融しル3内を真空
に排気した後、アルゴン(Ar)/4−の不活性カスを
封入してもよい。)しかる後、前記アンプル3の封止端
部3aに石11!:製の操作具5を溶接して該アンプル
3を図示のように加熱炉6内に配置し、加熱してアンフ
ル3内の前記成長用メルト素材4を溶融し、充分に溶解
した状態で、前記アンプル3を操作具5によって180
7%回転させて該アンフル3内の前記メルト成型容&1
内に。First, as shown in Figure 1, a semi-cylindrical melt made of high-purity quartz is formed with a plurality of (in this case five) partitions 2! ! i!
Prepare base 1. Next, as shown in FIG. 2, the melt-molded container 1 is placed in the upper half region of the ampoule 3 made of high-purity stone layer, which has an inner diameter that allows the outer part of the melt-molded container 1 to fit with precision. Place it inset upside down. Then, in the lower half space *# in the ampoule 3, 9, for example, easily evaporable Hg and O(1, Te) were mixed in a prescribed composition ratio in a predetermined plow-scale manner. Fill the ampoule 3 with the weighed growth melt 4 for at least 6 growth steps. 3. After evacuating the inside of the ampoule 3, melt the opening of the ampoule 3 and evacuate the inside of the ampoule 3. After that, an inert scum of argon (Ar)/4- may be sealed.) After that, a stone 11! is placed in the sealed end 3a of the ampoule 3. : Welding the operating tool 5 made of the product, placing the ampoule 3 in the heating furnace 6 as shown in the figure, heating it to melt the growth melt material 4 in the ampoule 3, and in a sufficiently melted state, The ampoule 3 is 180
7% rotation to reduce the melt molding volume &1 in the ampul 3.
Inside.
溶融した成長用メルト素材4を流入させて充満する。次
いで第3図に示すように上記アンプル3を。The molten growth melt material 4 flows in and fills the space. Next, as shown in FIG. 3, the ampoule 3 is prepared.
加熱炉6より収り出した復水を加えたエチレングリコー
ル(HOOH2・CH20H)等の冷却溶液7中に浸演
し前記メルト成型容器1内の成長用メルト索材4を急冷
する。そうすれば前記成長用メルト素材4中の易蒸発成
分であるI(gが空@J都へ蒸発することが防止され均
一な組成のHg1−XCdXTeからなる成長用メルト
材料14が、前記メルト成型容器lの各仕切り2内に陰
型17た形で凝−1される。The melt cord material 4 for growth in the melt molding container 1 is quenched by immersing it in a cooling solution 7 such as ethylene glycol (HOOH2.CH20H) to which condensate discharged from the heating furnace 6 has been added. By doing so, the easily evaporable component I(g) in the growth melt material 4 is prevented from evaporating into the air, and the growth melt material 14 consisting of Hg1-XCdXTe having a uniform composition is A negative mold 17 is placed in each compartment 2 of the container 1.
従ってその後アンプル3を冷却溶液7中より収メルト成
卆容木1を引き出すことにより、第4区Iに示すように
成苧された一成艮工程分の液相エヒタキシャル成長用メ
ルト材ト114を1度に6個得ることか可能と々る。ま
たこれら6個のメルト材料14は、いずれも同一組成比
を楢するものであるから、この一連のメルト材料14を
液相エビクキシャル成長に用いることにより角現性よく
即110(]xTeからなるエピタキシャル結晶層を得
ることができる。Therefore, by subsequently pulling out the ampoule 3 from the cooling solution 7 to collect the melt-formed wood 1, the melt material 114 for liquid phase epitaxial growth grown in the Issei process is obtained as shown in Section 4 I. It is possible to get 6 at once. In addition, since these six melt materials 14 all have the same composition ratio, by using this series of melt materials 14 for liquid phase epiaxial growth, it is possible to easily form an epitaxial layer made of 110(]xTe with good crystallinity. A crystalline layer can be obtained.
なお以上の実施例では易蒸発性元素のHgを含むHgx
−1cax”rθのような成長用メルト材料を用いた場
合の例について説明しだが1本弁明はこれに画定される
ものではなく、その他の易蒸発性元素を含む*糾合金を
形成する場合にも適用可能:なことは宮うまでもない。In the above examples, Hgx containing Hg, an easily evaporable element,
An example will be explained in which a melt material for growth such as Also applicable: Needless to say.
(ロ))発明の効果
以上の説明から明らかなように1本発明に係る液相エピ
タキシャル成長用メルト材料の製造方法によれば、複数
棟のメルト集材組成の均一な複数個の成空された成長単
位のメルト材料を一挙に効が大幅に低減される等の利点
も壱する。よって本発明の製造方法によって形成された
成長単位のメルト材料をHgl 、 Cr5XTe%−
からなる化合物キ一体結晶の液相エビタギシャル成長に
適用して極めて有利である。(b)) Effects of the invention As is clear from the above explanation, 1. According to the method for producing a melt material for liquid phase epitaxial growth according to the present invention, a plurality of vacancies with a uniform composition of the melt aggregates of a plurality of ridges can be produced. Another advantage is that the effectiveness of the melt material in the growth unit is greatly reduced all at once. Therefore, the melt material of the growth unit formed by the manufacturing method of the present invention is Hgl, Cr5XTe%-
It is extremely advantageous to apply it to the liquid phase epitaxial growth of monolithic crystals of compounds consisting of.
第1図は本発明に係る液相エピタキシャル成長用メルト
材料の製造方法に用いる仕切り付きメルト成型容器の一
実施例を示す斜視図、第2図乃至第3図は本発明に係る
液相エピタキシャル成長用メルト材料の製造方法の一実
施例を説明する工程要部断面図、第4図は本発明の製造
方法によって得られた成長単位のメルト材料の一実施例
を示す斜視図である。
図面において1は仕切り2付きメルト成fM’4器。
3は石英製アンプル、3aはアンプル3の封止端部、4
は成長用ノルド索材、5はアンプル操作共。
6は加熱炉17は冷却溶液、 14は被数個に成型さ
れた成長用メルト材料を示す。
第1図
第2図
第3図
第4!I!JFIG. 1 is a perspective view showing an embodiment of a partitioned melt molding container used in the method for producing a melt material for liquid phase epitaxial growth according to the present invention, and FIGS. 2 and 3 show a melt molding container for liquid phase epitaxial growth according to the present invention. FIG. 4 is a cross-sectional view of a main part of the process for explaining an embodiment of the method for producing the material; FIG. 4 is a perspective view showing an embodiment of the melt material of the growth unit obtained by the production method of the present invention. In the drawing, 1 is a melt forming machine fM'4 with partition 2. 3 is a quartz ampoule, 3a is a sealed end of ampoule 3, 4
5 is for Nord rope material for growth, and 5 is for ampoule operation. Reference numeral 6 indicates a cooling solution in a heating furnace 17, and 14 indicates a melt material for growth molded into several pieces. Figure 1 Figure 2 Figure 3 Figure 4! I! J
Claims (1)
り伺きメルト成型容器を1向きに挿設すると共に、その
下方の領域にメルト素材を収容し。 該アンプルを気密に封止した後、該アンプルを所定温度
に加熱して内部の前記メルト素材を溶融混合し、この状
態で前記アンプルを回転させて前記溶融状態のメルト材
料を、V一方に反転した上記複数の仕切り伺きメルト成
型容器内に流入せしめ。 その後石英アンプルを冷却して前記成型(各器内に凝固
した複数個の成型メルト材料を形成することを特徴とす
る液相エピタキシャル成長用メルト材料の製造方法。[Scope of Claims] A plurality of partitioned melt molding containers are inserted in one direction in the upper region of the quartz ampoule in the longitudinal direction, and a melt material is stored in the lower region. After the ampoule is hermetically sealed, the ampoule is heated to a predetermined temperature to melt and mix the melt material inside, and in this state, the ampoule is rotated to turn the melt material in the molten state to one side of the V. The melt is poured into the melt molding container through the plurality of partitions mentioned above. A method for producing a melt material for liquid phase epitaxial growth, characterized in that the quartz ampoule is then cooled to form the molded material (to form a plurality of molded melt materials solidified in each vessel).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1518883A JPS59141236A (en) | 1983-01-31 | 1983-01-31 | Preparation of molten material for liquid epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1518883A JPS59141236A (en) | 1983-01-31 | 1983-01-31 | Preparation of molten material for liquid epitaxial growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59141236A true JPS59141236A (en) | 1984-08-13 |
JPS6361772B2 JPS6361772B2 (en) | 1988-11-30 |
Family
ID=11881862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1518883A Granted JPS59141236A (en) | 1983-01-31 | 1983-01-31 | Preparation of molten material for liquid epitaxial growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59141236A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6913124B2 (en) | 2001-08-23 | 2005-07-05 | Yamaha Hatsudoki Kabushiki Kaisha | Vibration inhibiting structure for rotor |
CN100362254C (en) * | 2000-03-30 | 2008-01-16 | 本田技研工业株式会社 | Wheel brake drum |
-
1983
- 1983-01-31 JP JP1518883A patent/JPS59141236A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100362254C (en) * | 2000-03-30 | 2008-01-16 | 本田技研工业株式会社 | Wheel brake drum |
US6913124B2 (en) | 2001-08-23 | 2005-07-05 | Yamaha Hatsudoki Kabushiki Kaisha | Vibration inhibiting structure for rotor |
Also Published As
Publication number | Publication date |
---|---|
JPS6361772B2 (en) | 1988-11-30 |
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