JPS59138475A - Preparation of electrode for controlling ion stream - Google Patents

Abstract

PURPOSE:To shorten a production time and to enhance the shape accuracy and positional accuracy of a hole, by performing a process for opening a large number of holes to a photosensitive insulating substrate by one process by an etching method. CONSTITUTION:Conductive layers 2 and photosensitive layers 3 are provided to the both entire surfaces of a photosensitive insulating substrate 1 and, after the formed photosensitive element is exposed to light 5 for exposure from both surfaces thereof by using a photomask 4 consisting of a mask part 4a and a light pervious part 4a, the exposed element is exposed to an etching liquid whereupon the photoresist layers 3 and the conductive layers 2 in the exposed parts are dissolved to form an electrode pattern having holes and a desired shape. After the residual photoresist layer 7 is removed, the piercing parts B coincided with the holes of the electrode pattern 6 are exposed by using a photomask 8 of which the total periphery of the edge 10 of the light pervious part 8b thereof is positioned on the electrode pattern 6 and the exposed parts are exposed to an etching liquid to dissolve off the exposed part B of the photosensitive insulating substrate 1 whereupon the piercing holes 9 coincided with the holes of the electrode pattern 6 is obtained and the production of an electrode for controlling an ion stream is completed.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a 1° ion flow control electrode used in an apparatus for electrostatic recording by controlling the flow of corona ions (Japanese Patent Application No. 57-9957).

FIG. 1 is a partial plan view showing an example of this type of ion flow control electrode, in which 1 is a photosensitive insulator substrate, 6 is a ring-shaped electrode pattern, and about 1000 to 6000 pieces are provided on both the front and back surfaces. There is. Reference numeral 9 denotes a hole provided through the electrode pattern 6 and the photosensitive insulator substrate 1.

It is. The electrode shown in this figure has an electrode pattern 6.

They are arranged in one row as shown, but they are arranged in several rows.

There are some. Ion flow control for this Erica configuration.

The conventional method for manufacturing electrodes is to first form an electrode pattern of a desired shape with holes on both sides of a photosensitive insulator 5 substrate 1.

After forming a plurality of holes 9 - 76, holes 9 corresponding to the holes 9 are formed in the photosensitive insulator substrate 1° using a drill. Thus, traditional methods are photosensitive.

Several dozen holes 9 are drilled into the insulator substrate 1.

It took time to manufacture because it was opened inside the castle, and there were also holes.

There is a problem in that the shape accuracy of the electrode pattern B is poor, and furthermore, it is difficult to precisely match the positions of the hole 9 to be drilled with the hole in the electrode pattern B.

The present invention was made in view of the above-mentioned problems of the prior art, and its purpose is to shorten the manufacturing time and improve the shape accuracy of the hole by reducing the number of steps required for drilling holes in a photosensitive insulator substrate. An object of the present invention is to provide a method of manufacturing an ion flow control electrode that can improve positional accuracy.

That is, the present invention provides holes in a photosensitive insulator substrate.

Open by etching using the holes in the electrode pattern.

Its structural features include electrode patterns with holes in the desired shape on both sides of the photosensitive insulator substrate.

After forming the electrode pattern, photolithography is performed using a photomask such that the entire edge of the light-transmitting portion is located on the electrode pattern 5 pattern.

ting, thereby making a hole in the photosensitive insulator substrate.

It opens the door.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIGS. 2(a) to 2(g) are schematic process steps showing a method of manufacturing 10 ion flow control electrodes according to an embodiment of the present invention.

FIG.

That is, in order to carry out the manufacturing method of the present invention.

As shown in FIG. 2(a), the photosensitive insulator group is removed.

Prepare board 1. Next, as shown in (I)),
A conductive electrode material and a photoresist material are applied in this order to the entire surface of both surfaces of the 5-conductor insulator substrate 1, and the conductive layer 2 and the photoresist layer 6 are provided by applying the same. Next, (C)
As shown in FIG.
Exposure is performed from both sides using the exposure light beam 5. Here, a partial plan view of this photomask at 4° is shown in FIG. In the hole l-' mask 4 shown in this figure, the mesh-like portion 4
a is exposure light.

The part of the mask where line 5 is almost transparent, the white part where there is a break.

41) is a light transmitting portion. Dew 5 as shown in (C)
After exposure to light, expose the exposed area to etching solution.

The photoresist layer 6 and the conductive layer 2 are melted.

Electrode pattern of desired shape with holes as shown in (d).
A tunnel 6 is formed. Here, 7 is the residual photoresist layer. Next, 1° of the remaining photoresist layer 7 is removed to obtain the state shown in (e), as shown in (f).

Exposure is performed using a photomask 8 for etching a photosensitive insulator substrate. Here, a partial plan view of the photomask 8 is shown in FIG. In this figure, 8a is a mask part,
8b is a light transmitting portion, and 10 is an edge of the light transmitting portion 8b. Note that this photomask 8 is (
As shown in f), in order to prevent the exposure of the outer part A of the electrode pattern B of the photosensitive insulator substrate 1 and to expose the through part B that corresponds to the hole of the electrode pattern B, a photomask is used together with the electrode pattern 6. It acts as 0. For this purpose, in this embodiment.

The diameter of the light transmitting portion 81) of the photomask 8 is equal to that of the electrode.

The electrode pattern is larger than the hole diameter of pattern B.

- It is smaller than the outer diameter of the ring 6. death.

Therefore, as shown in (f), the entire circumference of the edge 10 of the five light transmitting portions 8b of the photomask 8 is on the electrode pattern 6.

It is located in That is, such a photomass.

When exposure is carried out as shown in (f) using the strip 8, a portion that is not covered or covered by either the bottom mask 8 or the electrode pattern B, and a penetrating portion that corresponds to the hole in the cut electrode pattern B are formed. B is exposed. Sex with this.

The exposed portion of the photosensitive insulator substrate 1 is exposed to a cleaning solution.

When B is dissolved away, an electrode pattern is formed as shown in (g).

- A foodie hole 9 matching the hole B is obtained, and the manufacture of the ion flow control electrode is completed. (g') is a partial plan view of this completed electrode.

In the above embodiment, as described above, the diameter of the light transmitting portion 8b of the photomask 8 was set larger than the hole of the electrode pattern B and smaller than the outer diameter of the ring of the electrode pattern B.
The diameter of the light transmitting portion 4/8b of the photomask 8 is the hole diameter of the electrode pattern B, that is, the photosensitive area.

The diameter of the hole to be made in the insulator substrate 1 should be the same as that of the hole to be made.

It's good to wear. It's a trench, conductive as electrode pattern 6.

Copper is generally used as the electrode material.

As the etching liquid for dissolving the conductive layer, it is suitable for copper etching as long as it does not dissolve the photosensitive insulator 5 substrate 1.

Any known combination may be used, but other combinations may be used.

Good too.

As the photosensitive insulator substrate 1, photosensitive glass 1° is used, which has a property that the portion irradiated with light easily dissolves in acid. The etching solution for dissolving the photosensitive insulator substrate is hydrofluoric acid, which can dissolve the glass in the exposed areas. The combination of the substrate and the substrate etching solution may be other than those described above, as long as the portions of the substrate irradiated with light or electromagnetic waves can be selectively dissolved or left.

Furthermore, the copper of electrode pattern B is not easily attacked by hydrofluoric acid, so it can withstand the process described above.
By partially modifying the manufacturing process shown in FIGS. (a) to (g), the remaining photoresist layer 7 for electrode pattern etching is removed after etching the conductive layer 2.

After 1 degree (d), it is not removed immediately, but after etching of 1 degree of the photosensitive insulator substrate is completed (g).

Then, during etching of the photosensitive insulator substrate 1, the electrode pattern 6 is covered with this residual photoresist layer 7, and the substrate is better protected from the etching agent.

As explained above, according to the manufacturing method of the present invention,
Since the process of drilling a large number of holes in the photosensitive insulator substrate can be performed at once in the etching process, manufacturing time can be significantly shortened.

Further, electrode patterns accurately formed by photoetching are used as photomasks to form electrode patterns.

Since penetrating holes are made by photoetching along the holes of the turn, the shape accuracy of the holes and the positional accuracy of the electrode pattern and the holes 5 and the holes of the substrate can be greatly and easily improved.

[Brief explanation of drawings]

FIG. 1 is a partial plan view showing an example of an ion flow control electrode;
2(a) to 2(g') are schematic process diagrams showing a method of manufacturing an ion flow control electrode according to an embodiment of the present invention; FIG. 6 is a photomask for electrode pattern etching. A partial plan view, FIG. 4, shows the photosensitive insulator substrate enotin. FIG. 3 is a partial plan view of a photomask for printing. 1... Photosensitive insulator substrate 2... Conductive layer
56... Photoresist layer 4.8... Photomask. 5...Light beam for exposure 6...Electrode pattern
・7...Residual photoresist layer 81)...Light transmitting part 9...Hole 10°°°
Edge 1゜Patent Applicant Nippon Telegraph and Telephone Public Corporation Representative Patent Attorney Junnosuke Nakamura 5 Procedural Amendment (Spontaneous) May 9, 1980 Commissioner of the Japan Patent Office Indication of the case Patent Application No. 11243 of 1988 Title of the invention Ion flow Relationship with the case of a person amending the manufacturing method of control electrodes Target of amendment by the patent applicant's representative Detailed description of the invention in the specification. (2) "Procedural amendment (method) to correct g'J to rhJ" on page 5, line 15 of the same % formula % Indication of incident 1982 Patent Application No. 11-243 Title of invention Electrode for controlling ion flow Relationship with the case of a person who amends the manufacturing method of a patent application agent Subject of amendment A brief explanation column of drawings in the specification and the drawings. 4' Ji!II!N!Jhi5

Claims (1)

[Claims] Step 5 of providing a conductive layer on both sides of a photosensitive insulator substrate, and optionally photoetching the conductive layer to form holes. The process of forming an electrode pattern in the shape of and light transmission. The entire circumference of the edge of the portion is located on the electrode pattern. The above-mentioned exposure is performed by photoetching using a photomask. The holes in the electrode pattern match the holes in the insulator substrate. . A. A method characterized by comprising the step of providing a hole. A method for manufacturing an electrode for on-current control.