JPS59138004A - Ferrodielectric thin film - Google Patents
Ferrodielectric thin filmInfo
- Publication number
- JPS59138004A JPS59138004A JP58011781A JP1178183A JPS59138004A JP S59138004 A JPS59138004 A JP S59138004A JP 58011781 A JP58011781 A JP 58011781A JP 1178183 A JP1178183 A JP 1178183A JP S59138004 A JPS59138004 A JP S59138004A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- pyroelectric
- sensitivity
- merit
- pbtio3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Inorganic Insulating Materials (AREA)
- Radiation Pyrometers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、強誘電体薄膜たとえば赤外線検出素子に有用
な強誘電体薄膜に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a ferroelectric thin film, such as a ferroelectric thin film useful for infrared detection elements.
−従来例の構成とその問題点
赤外線検出素子は、量子形と熱形とにわけられる。４を
子形の素子は感度か高く、応答が速いが、冷却を必要と
し、丑だ、感度の波長依存性が太きいという欠点をもっ
ている。一方、熱形の素子は、室温で動作し、波長依存
性がないという大きい長所をもっている。なかでも、強
誘電体を用いた焦電形素子は感度、応答速度などの点で
、他の熱形素子に比べてすぐれている。-Conventional structure and its problems Infrared detection elements can be divided into quantum type and thermal type. The 4-shaped element has high sensitivity and quick response, but it requires cooling and has the disadvantage that the sensitivity is highly dependent on wavelength. On the other hand, thermal elements have the great advantage of operating at room temperature and having no wavelength dependence. Among them, pyroelectric elements using ferroelectric materials are superior to other thermal elements in terms of sensitivity, response speed, etc.
すてば［実用化されている焦電素子には、セラミックス
やｒ（を結晶が用いられている。焦電素子は、薄くすれ
ばそ・１ｔだけ熱容量が下がり、感度が増加するが、−
ｒｉ′ｌ結晶やセラミックスでは、加工性に問題があっ
て、あ−まり〆υｉくでき々い。そのため感度にも限界
があった。まだ単一素子で２次元の熱像を侍」、つとす
ると、機械走査が必要で、大形で高価な装置に在る。２
次元の熱像は１、パイロビジコンでもイ（１られるが感
度２分解能ともによくない。[Pyroelectric elements that are in practical use use ceramics or crystals.If the pyroelectric element is made thinner, its heat capacity decreases by 1 ton and its sensitivity increases, but -
Ri'l crystals and ceramics have problems with workability, and cannot be made very tightly. Therefore, there was a limit to the sensitivity. However, if one were to create a two-dimensional thermal image using a single element, mechanical scanning would be required, which would require large and expensive equipment. 2
The dimensional thermal image is 1, and the pyrobidicon is also 1 (1, but both the sensitivity and resolution are not good.
高感度のブ（ｚ型彫２次元アレイかでされば、室温動作
で高性能の安価な熱像装置をつくることかできる。If a high-sensitivity block (Z-shaped two-dimensional array) is used, it is possible to create a high-performance, inexpensive thermal imaging device that operates at room temperature.
このような高感度の焦電素子、とくに２次元アｌ／イを
イ（ｔようとすると、セラミックスや単結晶の作製が不
ｉ１矢な条件になる。If such a high-sensitivity pyroelectric element, especially a two-dimensional Al/A element, is to be manufactured, the production of ceramics or single crystals becomes impossible.
焦電形赤外線検出素子は、キュリ一点よりも低イＷ’ｉ
＋４度でないと使用することができないので、感度の温
度１１．Ｊ′４／１．や安定性を考えると、キュリ一点
は高い方か、１：い。焦電係数ｄＰｒ／ｄＴが大きいほ
ど、Ｗ’ｌｌ’１度Ｔの変化に対して、分極Ｐｒの変化
が大きい。The pyroelectric infrared detection element has a W'i lower than the Curie point.
It cannot be used unless it is +4 degrees, so the sensitivity temperature is 11. J'4/1. Considering the stability and stability, Currie's score is on the higher side, 1: Yes. The larger the pyroelectric coefficient dPr/dT, the larger the change in polarization Pr with respect to a change of 1 degree T in W'll'.
性能指ｐ９（ｄＰｒ／ｄＴ）（１／ε）ハ゛、発生電圧
の犬小をきめるので、大きい方がよい。εは誘電率で、
これは小さい方がよい。ＰｂＴｉＯ３は、キュリ一点が
高く（約ｓｏｏ’ｃ）、εもかなり小さく（約２００’
）、焦電材料としてすぐれていて、すでに、セラミック
スを用いた赤外検出器が実用化されている。しかし、Ｐ
ｂＴｉＯ３薄膜については、セラミックスと同等あるい
はそれ以上の特性のものがこれまでのところ報告がない
。The performance index p9 (dPr/dT) (1/ε) determines the magnitude of the generated voltage, so the larger it is, the better. ε is the dielectric constant,
The smaller this is, the better. PbTiO3 has a high Curie point (approximately soo'c) and a fairly small ε (approximately 200'
), is an excellent pyroelectric material, and infrared detectors using ceramics have already been put into practical use. However, P
As for bTiO3 thin films, there have been no reports so far of properties equivalent to or better than those of ceramics.
発明の目的
本発明は、焦電形赤外検出素子としての性能指数がＰｂ
Ｔ１０３セラミツクスと同等かそれ以上のｐｂ’ｒｉｏ
３Ｈｉｐ膜を得ることを目的とする。Purpose of the Invention The present invention provides a pyroelectric infrared detection element with a figure of merit of Pb.
PB'rio equivalent to or better than T103 ceramics
The purpose is to obtain a 3Hip film.
発明の構成
本発明は、高周波スパッタ法で薄膜を形成するに際して
、ターゲットに、少量のＬａ２Ｏ３の添加されたＰｂＴ
ｉＯ３粉末を用いることをもっとも特徴とし、これに
よって、無添加のＰｂＴｉＯ３粉末の場合に比べて、比
抵抗の筒いＰｂＴｉＯ３薄膜がｑ４）られる。この薄膜
を、無添加のＰｂＴｉＯ３粉末で得られるン専膜の場合
よシ高電場で分極し、焦電形検出素子の性能指数を大き
くすることができる。Structure of the Invention The present invention provides a method for forming a thin film by high-frequency sputtering using a PbT target to which a small amount of La2O3 is added.
The most distinctive feature is the use of iO3 powder, and this
Therefore, compared to the case of additive-free PbTiO3 powder, a cylindrical PbTiO3 thin film with a resistivity q4) is obtained. This thin film can be polarized with a higher electric field than a pure film obtained from additive-free PbTiO3 powder, and the figure of merit of the pyroelectric detection element can be increased.
実施例
本発明のＰｂＴｉＯ３灰膜は、高周波スパッタリングで
作製した。ターゲットの組成は、〔（１−Ｘ）ＰｂＯ＋
（１−ｘ ） ＴｉＯ２）＋ｘ −Ｌａ２Ｏ３または（
（１−Ｘ）ＰｂＴｉＯ，−１−ｘＬａ２０３ ：ｌ］で
ある。ただし、Ｘ−〇〜０．１５である。厚相のＰｂＯ
、ＴｉＯ２とＬａ２Ｏ３、またはＰｂＴｉ０．、とＬａ
２Ｏ３を十分湿式混合して、ターゲットとしプこ。こｒ
しら２種類のターゲットで得た簿膜は、同じ！Ｉ＋ｆＪ
ｌ牛を示した。EXAMPLE A PbTiO3 ash film of the present invention was prepared by high frequency sputtering. The composition of the target is [(1-X)PbO+
(1-x) TiO2)+x-La2O3 or (
(1-X)PbTiO, -1-xLa203:l]. However, it is X-0 to 0.15. thick phase PbO
, TiO2 and La2O3, or PbTi0. , and La
Mix 2O3 thoroughly and use it as a target. This
The results obtained with the two types of targets are the same! I+fJ
1 cow was shown.
基板には、アルミナセラミック基板を用いた。An alumina ceramic substrate was used as the substrate.
基板の片ｕ’ｔｉに、電極として白金をスパッタリング
でつけた。基板をヒー・７上に固定し、基板を５７５０
に加熱し７’ｃｏちｊメ囲気ガスは、アルゴンと酸素の
混合気体で、混合比（ｒｉ、、アルゴンが９０係で、酸
素が１０．％である。ガス圧ば６Ｐａ″′ｃあった。高
１ｉ’ｄ波マクネトロンスパツタリングにより基板の電
極上に、厚ざ１〜２μｍのＰｂＴｉＯ３薄膜を形成した
。Platinum was applied as an electrode to one piece u'ti of the substrate by sputtering. Fix the board on Heater 7 and place the board on 5750
The surrounding gas was a mixture of argon and oxygen, with a mixing ratio (ri) of 90% argon and 10% oxygen.The gas pressure was 6 Pa''c. A PbTiO3 thin film with a thickness of 1 to 2 μm was formed on the electrode of the substrate by high 1i'd wave McNetron sputtering.
分極と測定の）ζめに、ＰｂＴ工０３ 上に、直径約１
馴の白金電極をスゲツタリング法で形成した。(for polarization and measurement) on the PbT coating 03, approximately 1 mm in diameter.
A conventional platinum electrode was formed by the sgettering method.
分極と測定のだめに、肘１）Ｔｉ０３上に、直径約１ｍ
ｍの白金電極をスパッタリングでつけた。試料の厚み方
向に、８０〜１５０に■／Ｃノ〃の直流電場を２００こ
で、１０分間印加して、分極を行なった。For polarization and measurement, place the elbow 1) on Ti03, about 1 m in diameter.
A platinum electrode of m was attached by sputtering. Polarization was performed by applying a DC electric field of 80 to 150 cm/C for 10 minutes at 200 cm in the thickness direction of the sample.
分極後、焦電係数ｄＰｒ／ｄＴと誘電率εを測定した。After polarization, the pyroelectric coefficient dPr/dT and the dielectric constant ε were measured.
各組成の薄膜の最大分極電場と性能指数（ｄｐｒ／ａＴ
）（１／ε）を表に示す。表には、従来のＰｂＴ１０３
磁器の値も示しである。Maximum polarization electric field and figure of merit (dpr/aT) of thin films of each composition
)(1/ε) is shown in the table. The table shows conventional PbT103
The values for porcelain are also indicated.
以下余白
表 ；ｔｌ［成（（１−ｘ ） ＰｂＴｉＯ３＋ｘＬａ
２０３：３を有する：：、１７膜の最大分極電場と性能
指数Ｌ２Ｌ２０．の添加ｉｉｔ ｘがｏ〜０．００２、
および、０．１５では、最大分極電場は、はぼ従来の磁
器と同じである。そして性能指数も磁器におよばない。Below is the margin table; tl [formation ((1-x) PbTiO3+xLa
Maximum polarization electric field and figure of merit L2L20. addition of iit x is o~0.002,
And at 0.15, the maximum polarization electric field is almost the same as conventional porcelain. And the figure of merit is not as good as porcelain.
−ツバ適当なｉ什のＬａ２ｏ３、即ち、ｘ−０，○０４
〜０．１０では、最大分極電場がかなり増加し、性能指
数は磁器と同じか、かなり大きくなる。- La2o3 of the appropriate amount of brim, i.e. x-0, ○04
At ~0.10, the maximum polarization field increases considerably and the figure of merit is the same as or much larger than porcelain.
発明の効果
以上のように、本発明では、ターゲットに使用するｐｂ
Ｔｉ○３に適量のＬａ２Ｏ３を添加しているので従来の
磁器と同等、あるいはかなり大きい性能指数の薄膜焦電
体を得ることができる。これを用い、高感度の赤外線検
出器を構成できる。Effects of the Invention As described above, in the present invention, pb used as a target
Since an appropriate amount of La2O3 is added to Ti○3, it is possible to obtain a thin film pyroelectric material with a figure of merit equal to or considerably higher than that of conventional porcelain. Using this, a highly sensitive infrared detector can be constructed.
Claims (1)
（ｘ＝ｏ、ｏ０４〜０．１０）を有する強誘電体薄膜。Composition ('(1-x)PbTi03 +x-La203)
A ferroelectric thin film having (x=o, o04 to 0.10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58011781A JPS59138004A (en) | 1983-01-27 | 1983-01-27 | Ferrodielectric thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58011781A JPS59138004A (en) | 1983-01-27 | 1983-01-27 | Ferrodielectric thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59138004A true JPS59138004A (en) | 1984-08-08 |
Family
ID=11787487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58011781A Pending JPS59138004A (en) | 1983-01-27 | 1983-01-27 | Ferrodielectric thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59138004A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61285609A (en) * | 1985-06-13 | 1986-12-16 | 日本曹達株式会社 | Lead titanate ferrodielectric thin film and manufacture thereof |
| JPS6369272A (en) * | 1986-09-10 | 1988-03-29 | Matsushita Electric Ind Co Ltd | Pyroelectric thin film |
| JPH07211135A (en) * | 1993-12-01 | 1995-08-11 | Matsushita Electric Ind Co Ltd | Ferroelectric thin film and manufacture thereof |
| US6121647A (en) * | 1996-06-26 | 2000-09-19 | Tdk Corporation | Film structure, electronic device, recording medium, and process of preparing ferroelectric thin films |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5110794A (en) * | 1974-07-17 | 1976-01-28 | Suwa Seikosha Kk | HYOJITAIYOTOMEIDENKYOKUSEIZOHOHO |
-
1983
- 1983-01-27 JP JP58011781A patent/JPS59138004A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5110794A (en) * | 1974-07-17 | 1976-01-28 | Suwa Seikosha Kk | HYOJITAIYOTOMEIDENKYOKUSEIZOHOHO |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61285609A (en) * | 1985-06-13 | 1986-12-16 | 日本曹達株式会社 | Lead titanate ferrodielectric thin film and manufacture thereof |
| JPH0570242B2 (en) * | 1985-06-13 | 1993-10-04 | Nippon Soda Co | |
| JPS6369272A (en) * | 1986-09-10 | 1988-03-29 | Matsushita Electric Ind Co Ltd | Pyroelectric thin film |
| JPH07211135A (en) * | 1993-12-01 | 1995-08-11 | Matsushita Electric Ind Co Ltd | Ferroelectric thin film and manufacture thereof |
| US6121647A (en) * | 1996-06-26 | 2000-09-19 | Tdk Corporation | Film structure, electronic device, recording medium, and process of preparing ferroelectric thin films |
| US6387712B1 (en) | 1996-06-26 | 2002-05-14 | Tdk Corporation | Process for preparing ferroelectric thin films |
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