JPS59134829A - Device for spraying and developing semiconductor - Google Patents

Abstract

PURPOSE:To increase the amount of liquid reaching a wafer by restraining liquid evaporation and reduce the used amount by closing the space in the periphery of the wafer, thus keeping the inside at over the atmospheric pressure, and then spraying. CONSTITUTION:When a wafer 11 is placed on a chuck 5, a cup 7 rises and is closed by a lid 4, thus being sealed with rings 12-14. N2 of approx. 1.5atm is introduced 17 to the closed space 15, the wafer is spinned by means of a motor 1, and developer and rinsing liquid mixed with N2 gas of approx. 5atm are sprayed out of nozzles 2 and 3. The periphery of the wafer is kept at about 1.3atm by adjusting a valve 18, and the wafer is developed, rinsed and dried. After drying, N2 introduction is stopped, the gas is exhausted 10, and the wafer 11 is taken out. This constitution makes processing time for development and rinsing shorten respectively, and accordingly the used amount of the liquid is much reduced.

Description

[Detailed description of the invention] The present invention relates to a semiconductor spray developing device.

A semiconductor spray developing device that develops a rubber-based negative type photoresist on the surface of a semiconductor wafer is generally shown in Figure 1 (a).
). That is, Fig. 1 (a
), 1 is a motor, a wafer chuck 5 is installed on the upper end of a spindle shaft 6 of the motor 1, the wafer chuck 5 is placed in a drain cup 7, and the upper opening of the drain cup 7 has a drain. A liquid cup top lid 4 is attached.

When the development is stopped, the drain cup 7 is lowered as shown in FIG. is absorbed on top.

In the operating state, the drain cup 7 rises as shown in FIG. 1(b), its opening is closed by the drain cup upper lid 4, and the developer and rinse liquid are sprayed from the developer spray nozzle 2 and the rinse liquid spray nozzle 3, respectively. The liquid is injected toward the semiconductor wafer 11 . 8 is a drain pipe, and the drain pipe 8
connects the bottom of the drain cup 7 and the drain tank 9, and the drain tank 9 is provided with an exhaust duct 10.

The developer solution and rinse solution commonly used are volatile and flammable substances whose main components are xylene and butyl acetate, respectively, and the vapors must be expelled to prevent physical and mental disorders caused by inhalation of the vapors and fires caused by ignition. The liquid is discharged from the bottom of the liquid cup 7 to the outside of the factory through a drain pipe 8, a drain tank 9, and an exhaust duct 10.

However, since this exhaust method is an open type, the amount of developer and rinse liquid that evaporates between spray nozzles 2 and 3 and 11 increases, and the amount of developer and rinse liquid that contribute to development increases. The problem was that it was decreasing.

The present invention solves the above-mentioned problems by sealing the area around the wafer during development and creating an atmosphere of 1 atm or higher to suppress the amount of evaporation of the developer and rinse solution used.
The aim is to reduce the amount of chemicals and shorten the development time by increasing the proportions of the developer and rinse solution that reach the surface.

Next, an embodiment of the present invention will be described with reference to FIG.

Components having the same configuration as those in FIG. 1 will be described with the same reference numerals. As shown in FIGS. 2(a) and 2(b), the device of the present invention is provided with a sheet and a railing 12 made of silicone comb on the rml of the drain cup 7 and the top lid 4 of the drain cup 7. Teflon seals 13 and 14 are provided between the bottom drain pipe 8 and the drain pipe 8 on the drain tank 9 side, and between the spindle shaft 6 and the drain cup 7. Cup top lid 4, drain pipe 8,
A space 15 surrounded by a drain tank 9 and a spindle shaft 6 is formed as a closed space. The vertical movement of the liquid drain cup 7 opens the closed space 15 and discharges the vapor of the developer and rinse liquid. Further, the seal links 12, 1
3. Surround the main body of the apparatus with an exhaust duct cover 16 for exhausting gas containing the vapor of the high-pressure developer and rinsing liquid that leaks out, and open the high-pressure N2 pipe 17 in the drain cup upper lid 4 to drain the inside of the sealed space. A chuck valve 18 is provided on the drain cup 7 to keep the pressure at 15 constant and to prevent danger due to abnormal pressure rise.

Next, the developing operation in the example will be explained step by step.

FIG. 2(a) shows the state when the developing operation is stopped. In this state, the wafer 11 is transferred onto the wafer chuck 5. When the transfer of the wafer 11 onto the wafer chuck 5 is completed, the drain cup 7 is raised, its opening portion is closed with the drain cup upper lid 4, and the leakage portion of steam is sealed with the seal rings 12, 13, and 14. , a sealed space 15 is formed around the wafer 11. In this state, from the high pressure N2 gas pipe 17 of the drain cup upper lid 4,
N2 gas at atmospheric pressure is introduced into the closed space 15. and,
The wafer 11 is rotated at 11,000 rpm by the motor 1, a developer is sprayed from the developer spray nozzle 2 for 10 seconds, and subsequently a rinse solution is sprayed from the rinse solution spray nozzle 3 for 10 seconds. Since the spray mixes the developer or rinse solution with high pressure (4.0 to 5.0 atm) N2 gas, the atmosphere around the wafer is kept at 1.2 to 1.3 atm due to the action of the chuck valve 18. is adjusted to

After spraying the rinse liquid, increase the rotation speed to 4 (100
The wafer is dried by increasing the rpm and rotating for 5 seconds.

When drying of the wafer is completed, the N2 in the drain cup upper lid 4 is
The introduction of N2 gas from the gas pipe 17 is stopped, the drain cup 7 is lowered, and the high pressure gas in the cup 7 is discharged through the exhaust duct cover 16 and the exhaust duct 10. Next, the wafer is carried out of the cup 7 from above the wafer chuck 7. With this, the developing work is completed. In addition, drain cup upper lid 4
The reason why higher pressure N2 gas is introduced is because some of the developer or rinse solution may adhere to the drain cup upper lid 4 during spraying, and droplets may form after spraying and cause sea urchins.
- This is to prevent it from falling onto -11 and causing dirt.

By implementing the above measures, it is now possible to shorten the developer and rinse solution spraying time from 10 seconds each to 4 seconds each, reducing the amount of developer and rinse solution used by 60%. It has become possible to reduce This not only has the effect of reducing costs, but also has the effect of disaster prevention by reducing the amount of developing solution and rinsing solution in the factory.

As explained above, the present invention seals the space around the wafer and maintains the inside at a pressure higher than atmospheric pressure before spraying inside the space, which suppresses evaporation of the liquid and allows the liquid to reach the wafer from the nozzle. This has the effect of not only increasing the amount of liquid and reducing the amount of chemicals used, but also shortening the developing time.

[Brief explanation of the drawing]

FIG. 1 shows the basic configuration of a conventional semiconductor spray developing device. FIG. 1(a) shows the stopped state, FIG. 1(b) shows the operating state, and FIG. 2 shows the basic structure of the embodiment of the present invention. FIG. 2(a) shows the stopped state, and FIG. 2(b) shows the operating state. 1... Mo 1-12... Developer spray nozzle, 3
...Rinse liquid spray nozzle, 4...Drainage cup top lid, 5...Wafer chuck, 6...Spindle shaft, 7...Drainage cup, 8...Drainage vibrator, 9
...Drainage tank, IO...Exhaust duct, 11...
Semiconductor sea urchin...-113°14...Rail ring, 1
5... Sealed space, 16... High pressure N2 piping, 17...
・Chuck valve patent applicant NEC Corporation, ・−゛・, ・ ＼ Agent Patent attorney Naka Kanno: No. 1
figure

Claims (1)

[Claims] (1) In a semiconductor spray developing device that develops rubber-based negative type photoresist on the surface of a semiconductor wafer,
A semiconductor spray developing device characterized in that a space surrounding a semiconductor wafer is formed into a closed space, and the internal pressure of the closed space is made higher than atmospheric pressure.