JPS59132503A - Composition for forming conductive film - Google Patents

Composition for forming conductive film

Info

Publication number
JPS59132503A
JPS59132503A JP811483A JP811483A JPS59132503A JP S59132503 A JPS59132503 A JP S59132503A JP 811483 A JP811483 A JP 811483A JP 811483 A JP811483 A JP 811483A JP S59132503 A JPS59132503 A JP S59132503A
Authority
JP
Japan
Prior art keywords
palladium
powder
paste
conductive film
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP811483A
Other languages
Japanese (ja)
Inventor
角田 志郎
関谷 茂
保住 勝信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP811483A priority Critical patent/JPS59132503A/en
Publication of JPS59132503A publication Critical patent/JPS59132503A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 導電被膜を形成するためのペースト組成物に関する。[Detailed description of the invention] The present invention relates to a paste composition for forming a conductive film.

半導体素子を合一硅素共晶合金等の低融点ろう利を介し
てセラミック基板に接合するには、セラミック基板上に
金属被膜が形成されていることが必要である。従来セラ
ミック基板上に金属被膜を形成するため、金粉とガラス
粉を有機質ビヒクルと混合した金ペーストが一般に用い
られてきた。
In order to bond a semiconductor element to a ceramic substrate through a low-melting solder such as a unified silicon eutectic alloy, it is necessary that a metal coating be formed on the ceramic substrate. Conventionally, gold paste, which is a mixture of gold powder and glass powder with an organic vehicle, has been generally used to form a metal film on a ceramic substrate.

該金ペーストをセラ“ミック基板」二に塗布し、焼成す
れば金粉はガラスの熔融によりセラミック基板−にに!
i!if @され、I−1つ金粉か焼結してほぼ一様な
厚さの金被膜か形成され導電性を示すようになる。
When the gold paste is applied to a ceramic substrate and fired, the gold powder becomes a ceramic substrate by melting the glass!
i! If @ is applied, the gold powder is sintered to form a gold coating with a substantially uniform thickness, which exhibits electrical conductivity.

この金被膜にはS1チツプを直接接合することもできる
。しかしなからSi 、GaP XGaAs等の半導体
素子を合金ろう材を介して基板に接合する場合、金属被
11ψは金である必要はない。このため近年、金粉に代
えて安価な銀粉及びパラジウム源としてパラジウム粉を
含有する導電被膜形成用ペーストか出現するに至った。
The S1 chip can also be bonded directly to this gold coating. However, when a semiconductor element such as Si 2 , GaP, XGaAs, etc. is bonded to a substrate via an alloy brazing material, the metal covering 11ψ does not need to be made of gold. For this reason, in recent years, a paste for forming a conductive film has appeared that contains inexpensive silver powder instead of gold powder and palladium powder as a palladium source.

パラジウム源の添加は被膜の導電性の低下を招くか、酸
化、硫化による変色の防止に効果かあることから、導電
成分中0.一〜5重第%になるように添加されている。
The addition of a palladium source causes a decrease in the conductivity of the film, or is effective in preventing discoloration due to oxidation and sulfurization, so 0. It is added in an amount of 1 to 5% by weight.

このような銀糸ペーストは、上記金ペーストの組成を参
考にして構成されており、銀粉として平均粒径/〜3μ
mの粒状銀粉を用い、導電成分10θ重量部当りガラス
粉を/〜左左重量含有し、場合により酸化n、dX酸化
ビスマス等を7止爪部までの範囲内で添加することがあ
る。
Such silver thread paste is constructed with reference to the composition of the gold paste described above, and has an average particle size of silver powder of ~3 μm.
m granular silver powder is used, glass powder is contained per 10 θ weight parts of the conductive component, and depending on the case, n oxide, dX bismuth oxide, etc. may be added within the range of up to 7 pawls.

ところで、半導体集積[01路(IC)装置灯のパッケ
ージ隻11式の一つにサーデイツーブ(CerDIP 
XOθ−ramic Dual In1ine 、Pa
ckageの略)型があり、この′!1す式は上面中央
部に底が平坦な窪み(キャビティという)を有するセラ
ミック板を基板に用いる。
By the way, one of the 11 package ships for semiconductor integrated circuit (IC) equipment lights was CerDIP (CerDIP).
XOθ-ramic Dual In1ine, Pa
There is a type (abbreviation for ckage), and this '! The single type uses a ceramic plate as a substrate, which has a flat-bottomed depression (called a cavity) in the center of the upper surface.

導電被膜はこのキャビティ底部に形成される。従って上
記金ペースト、銀糸ペーストは先ずキャビディ底部へ塗
布しなければならない。通常のペースト塗布にはスクリ
ーン印刷が適用できるが、キャビティが深い場合はスク
リーン印刷法を適用できず、このためペーストを有機溶
剤で希釈して流動性を増し、該キャビティ内に滴下して
塗布するようにしている。ペーストを滴下した基板は7
00〜/30 ’Cに加熱して・ペースト中の有機溶剤
を蒸発させて乾燥被膜とし次いで焼成炉中で焼成すれば
キャビティ底部に導電被膜が形成される。このようなペ
ースト塗布方法による場合、希釈したペーストは、2〜
3日で使用してしまうが、時として/週間以上放置した
後に使用することもある。ところがこのように長期間放
置後使用した場合、乾燥被膜上に黒点が点在するのか認
められ、この黒点は焼成後も消えない。希釈したペース
トは固形分が沈降し易いので使用する前に必ず攪拐−し
ているが、攪拌を含入りに行なってもこの墨点は無くな
らない。この黒点を詳細に調べた結果パラジウム粉の凝
集であることが判明した。パラジウムが黒点を形成して
しまうと導電被膜は銀−パラジウム合金にならず、変色
防Iにに役tたないばかりか、黒点部分のろう接が不良
となる欠点がある。
A conductive coating is formed on the bottom of this cavity. Therefore, the gold paste and silver thread paste must first be applied to the bottom of the cavity. Screen printing can be applied to normal paste application, but if the cavity is deep, screen printing cannot be applied, so the paste is diluted with an organic solvent to increase fluidity and applied by dropping it into the cavity. That's what I do. The board on which the paste was dropped is 7
A conductive film is formed at the bottom of the cavity by heating the paste to 00 to /30'C to evaporate the organic solvent in the paste to form a dry film, and then firing it in a firing oven. When using such a paste application method, the diluted paste is
I use it within 3 days, but sometimes I use it after leaving it for a week or more. However, when used after being left for such a long period of time, black spots can be seen scattered on the dried film, and these black spots do not disappear even after firing. Since the solid content of diluted paste tends to settle, it is always stirred before use, but the ink dots do not disappear even if the paste is thoroughly stirred. A detailed examination of these black spots revealed that they were agglomerations of palladium powder. If palladium forms sunspots, the conductive film will not become a silver-palladium alloy, and will not only be useless in preventing discoloration, but also have the drawback that soldering at the sunspots will be poor.

本発明は・、希釈後長期間放置してもパラジウムの凝集
が起らないような銀糸ペーストを提供すべく為されたも
のである。
The present invention was made in order to provide a silver thread paste that does not cause agglomeration of palladium even if it is left for a long period of time after being diluted.

この目的を達成すφため、本発明の導電被膜形成用組成
物は、パラジウム源として平均粒径0.7〜3μmのパ
ラジウム粉、酸化パラジウム粉及び銀パラジウム合金粉
からなる群から選ばれる少なくとも一種を用いる点に特
徴がある。
In order to achieve this object, the composition for forming a conductive film of the present invention uses at least one type selected from the group consisting of palladium powder, palladium oxide powder, and silver-palladium alloy powder having an average particle size of 0.7 to 3 μm as a palladium source. It is distinctive in that it uses

従来パラジウム源として粒径O0θ/〜0.06μmの
パラジウム粉が用いられていた。このパラジウム粉は通
常塩化パラジウム溶液に弱い還元剤を添加して?!J−
られたものである。このパラジウム粉を空″気中で焙焼
すると酸化パラジウム粉が得られる。
Conventionally, palladium powder with a particle size of O0θ/~0.06 μm has been used as a palladium source. This palladium powder is usually made by adding a weak reducing agent to the palladium chloride solution? ! J-
It is something that was given. Palladium oxide powder is obtained by roasting this palladium powder in air.

この酸化パラジウム粉をパラジウム源に用いた結果、驚
くべきことに、希釈したペーストをΩ週間程度放置して
もパラジウムの凝集が起らないことを発見した。パラジ
ウム粉を焙焼すると若干焼結か起こり、平均粒径が増大
する。杢発明者等はこの発見に基すき、粒径の異なる種
々のパラジウムか;iを人手して実験した結果、平均粒
径か0./lrm以上であればΩ週間程度放置してもパ
ラジウム源か凝集しないことを見出した。パラジウム源
の平均粒径は大きい程凝集防II−の効果は大であるか
、焼成して得られる導電被膜の基板との接着強度か化工
するので、あまり大きくすることができない。
As a result of using this palladium oxide powder as a palladium source, it was surprisingly discovered that palladium did not aggregate even if the diluted paste was left for about Ω weeks. Roasting palladium powder causes some sintering, which increases the average particle size. Based on this discovery, the inventors manually experimented with various palladium particles with different particle sizes, and found that the average particle size was 0. It was found that the palladium source did not agglomerate even if it was left for about Ω weeks if it was above /lrm. The larger the average particle size of the palladium source, the greater the effect of preventing agglomeration II-, or the adhesive strength of the conductive film obtained by firing with the substrate will be modified, so it cannot be made too large.

このためパラジウム源の平均粒径を3μm以下とした。For this reason, the average particle size of the palladium source was set to 3 μm or less.

パラジウム源としてパラジウム粉、酸化バラジウェ粉の
他、銀−パラジウム合金粉も使用できる。
As a palladium source, silver-palladium alloy powder can also be used in addition to palladium powder and oxidized Baladywe powder.

この合金粉は硝酸銀、硝酸パラジウムの混合溶液に炭酸
ソーダを添加し、生成する銀−パラジウム炭酸塩を還元
して得られるものである。
This alloy powder is obtained by adding sodium carbonate to a mixed solution of silver nitrate and palladium nitrate and reducing the resulting silver-palladium carbonate.

本発明の組成物によれば希釈したペーストを長時開放1
賢シてもパラジウム源か凝集しないので、使い残したペ
ーストを再使用することが可能となり、高価なIJ料を
有効に利用できるようになった。
According to the composition of the present invention, the diluted paste is left open for a long time.
Since the palladium source does not agglomerate, it is now possible to reuse the unused paste, making it possible to effectively utilize expensive IJ materials.

以下に実験例を示す。An experimental example is shown below.

9ド均粒径aμmの銀粉6乙 (Pd源としてAg −
Pd合金粉を用いる場合はその含冶°銀漬分を減少させ
る)重J、Bi部、PbO:B O: 5iO−乙θ:
 10 : 302 3        2 (’111m比)の硼砂酸鉛カラス粉2重量部、柚々の
粒径のPd粉、PdO粉、Ag : Pd = 70 
+ 30のAg−Pd合金粉E Pd換算で一重量部に
なるように及びエチルセルロースを20重@%含有する
ターピネオール溶液(ビヒクル)30重量部を混練して
ペーストとした。次いでこのペースト100重量部にタ
ーピネオール700重量部を添加して希釈し、3.5.
7.10、/λ、15./7及び20日後にアルミナ基
板のキャビティに滴下し、7.30’Cで乾・操後及び
qoo cで焼成後の尊′市被膜を観察してパラジウム
の凝集のイj無を判定した。結果を第1表に示す。
Silver powder with an average particle size of 9 μm (Ag − as a Pd source)
When using Pd alloy powder, reduce its silver content) Heavy J, Bi part, PbO:BO: 5iO-Otsu θ:
10: 302 3 2 ('111m ratio) lead borax acid crow powder 2 parts by weight, Pd powder with a particle size of Yuzu, PdO powder, Ag: Pd = 70
A paste was prepared by kneading 30 parts by weight of a terpineol solution (vehicle) containing 20% by weight of ethyl cellulose and 1 part by weight in terms of Ag-Pd alloy powder E Pd. Next, 700 parts by weight of terpineol was added to 100 parts by weight of this paste to dilute it, and 3.5.
7.10, /λ, 15. After 7 and 20 days, the solution was dropped into the cavity of an alumina substrate, and the resulting film was observed after drying and processing at 7.30'C and after firing at QOOC to determine whether there was agglomeration of palladium. The results are shown in Table 1.

第1表において、凝集していないものを○印、;資集の
認められたものを×印で示した。
In Table 1, those that were not agglomerated are marked with a circle; those that were found to be collected are marked with an x.

第    /    k 比較例//  /、A  、2(’I)rm)、2  
30 10000000000/コ尚、接着強度の測定
は、導電被膜に−mm角、厚ざ、20μmの硅素2正射
%含有金−硅素合金ろう材を介してΩ・、−m’9y 
、厚さQ、11mmのS1チツプをダイボンダーにより
接合し、接合したSiチップの側面に荷重をJi1’=
)、剥離するときの力を読み取る方法で行なった。
/ k Comparative Example // /, A, 2('I)rm), 2
30 10000000000 / Co. The adhesive strength was measured by applying Ω, -m'9y to the conductive film through a gold-silicon alloy brazing material containing 2% silicon orthogonally irradiated with -mm square, thickness, and 20 μm.
, S1 chips with thickness Q and 11 mm are bonded using a die bonder, and a load is applied to the side surface of the bonded Si chips at Ji1'=
), this was done by reading the force at the time of peeling.

第1表からパラジウム源はPd粉、PdO粉、Ag−P
d合金粉の種類の如何にかかわらず平均粒径0./μm
で放置日数か0.0gμm1侍の5日から72日に飛躍
的に向上し、0.2μm以上では何れも20日以上の放
1rCに耐えられることが判る。但し、接着強度は\1
1均粒径の増大′につれて低下し、グμmでは7.2に
9になっている。実用上は/Jkg以上が必要であり、
従ってこの結果からPd源の平均粒径は3μmを−f−
限とした。
From Table 1, palladium sources are Pd powder, PdO powder, Ag-P
dThe average particle size is 0. regardless of the type of alloy powder. /μm
It can be seen that the number of days of exposure for 0.0 g μm 1 Samurai was dramatically improved from 5 days to 72 days, and that for 0.2 μm or more, all cases could withstand exposure to 1 rC for 20 days or more. However, the adhesive strength is \1
It decreases as the average particle size increases, and in terms of μm it becomes 7.2 to 9. For practical purposes, /Jkg or more is required.
Therefore, from this result, the average particle size of the Pd source is -f-
Limited.

出願人  住友金属鉱山株式会社− 什囮L 超土中#F勝象−0−Applicant: Sumitomo Metal Mining Co., Ltd. Decoy L Super Earth #F Shozo-0-

Claims (1)

【特許請求の範囲】[Claims] (1)導電成分として銀粉及びノぐラジウム源を含イI
し、パラジウム源は全導電成分中に0.Ω〜5重計%含
有され、目、つガラス粉を導電成分700市量部当り7
〜5重量部含有するペースト状の導電被膜形成用組成物
において、該パラジウム弛は、平均粒径0.7〜3μm
のパラジウム粉、酸化パラジウム粉及び銀パラジウム合
金粉からなる群から選ばれる少なくとも一種であること
を特徴とする導電被膜形成用組成物。
(1) Contains silver powder and a radium source as a conductive component I
However, the palladium source contains 0.0% in the total conductive component. Contains Ω~5 weight% of glass powder per 700 parts by weight of the conductive component.
In the paste-like conductive film forming composition containing ~5 parts by weight, the palladium has an average particle size of 0.7 to 3 μm.
A composition for forming a conductive film, characterized in that it is at least one selected from the group consisting of palladium powder, palladium oxide powder, and silver-palladium alloy powder.
JP811483A 1983-01-20 1983-01-20 Composition for forming conductive film Pending JPS59132503A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP811483A JPS59132503A (en) 1983-01-20 1983-01-20 Composition for forming conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP811483A JPS59132503A (en) 1983-01-20 1983-01-20 Composition for forming conductive film

Publications (1)

Publication Number Publication Date
JPS59132503A true JPS59132503A (en) 1984-07-30

Family

ID=11684259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP811483A Pending JPS59132503A (en) 1983-01-20 1983-01-20 Composition for forming conductive film

Country Status (1)

Country Link
JP (1) JPS59132503A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180523A (en) * 1989-11-14 1993-01-19 Poly-Flex Circuits, Inc. Electrically conductive cement containing agglomerate, flake and powder metal fillers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180523A (en) * 1989-11-14 1993-01-19 Poly-Flex Circuits, Inc. Electrically conductive cement containing agglomerate, flake and powder metal fillers
US5326636A (en) * 1989-11-14 1994-07-05 Poly-Flex Circuits, Inc. Assembly using electrically conductive cement

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