JPS59132150A - Hybrid ic - Google Patents
Hybrid icInfo
- Publication number
- JPS59132150A JPS59132150A JP58006198A JP619883A JPS59132150A JP S59132150 A JPS59132150 A JP S59132150A JP 58006198 A JP58006198 A JP 58006198A JP 619883 A JP619883 A JP 619883A JP S59132150 A JPS59132150 A JP S59132150A
- Authority
- JP
- Japan
- Prior art keywords
- hybrid
- resin
- ferrite powder
- radiation
- noise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
Abstract
Description
【発明の詳細な説明】
本発明はスイッチング素子を有する電子回路に関し、特
に輻射ノイズを軽減したハイブリッド川Cの改良に開す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electronic circuit having a switching element, and particularly to an improvement of a hybrid circuit C that reduces radiation noise.
スイッチ〉グ素子を有する電子回路においては、純粋な
正弦波ではなく、パルス状の大電流が流れ、るため、エ
ネルギーがあらかじめ設定された線路上を伝Jffil
?l’るのみではなく、電磁輻射どなって空間を1云
わっていくので、ぞの割合を無視できない。In electronic circuits with switching elements, large currents flow in the form of pulses rather than pure sine waves, so energy is transmitted along preset lines.
? This proportion cannot be ignored, as not only is there radiation, but also electromagnetic radiation fills the space.
特に、情報量の増大および取扱い周波数の高周波化は、
まずまづ回路の実装密度を高くする方向に進んで゛いる
。この実肢高密度1ヒの有効手段どじでスイッチング素
子を実装したハイブリッドICが用いられはじめている
。このような傾向が促進されるに従い、隣接回路間の干
渉にJ:る回路誤動作等が問題どなっている。ざらに、
前記電子回路から漏れたエネルギーが′jji音どなり
、外部装置にまで影響を及ぼすこともある。In particular, as the amount of information increases and the handling frequency becomes higher,
First of all, progress is being made in the direction of increasing the packaging density of circuits. Hybrid ICs with switching elements mounted thereon are beginning to be used as an effective means of achieving this high density. As this trend accelerates, circuit malfunctions due to interference between adjacent circuits are becoming a growing problem. Roughly,
The energy leaked from the electronic circuit may cause a roaring sound and even affect external devices.
また、このような外部に対する影響どしては、前記電磁
輻射だけではなく、線路を通じて外に出るノイズも重要
な問題である。In addition to the above-mentioned electromagnetic radiation, noise emitted to the outside through the lines is also an important problem.
後者のラインノイズの影響は、ラインにお(プるノイズ
フィルタにて高周波の減哀饅を上げてゆ(プば゛避けら
れることが知られている。これに対し、前者の輻射ノイ
ズの場合には、金属ケースで密閉してしまえば原理的に
は輻射はなくなるが、ハイブリッドICを密閉すること
は、空気の流れを悪くし部品の冷却効果を減じ、信頼性
を著しく損うことになり好ましくない。従って、ある程
度の電磁輻躬はt′「さざるを得ないのが現状である。It is known that the influence of the latter type of line noise can be avoided by increasing the reduction of high frequencies with a noise filter applied to the line.On the other hand, in the case of the former type of radiated noise, In principle, radiation will be eliminated if the hybrid IC is sealed in a metal case, but sealing the hybrid IC impedes air flow, reduces the cooling effect of the components, and significantly impairs reliability. This is not desirable. Therefore, the current situation is that a certain amount of electromagnetic interference must be avoided.
尚、このような雑音除去の基本的考え方どしては、でき
るだけ発生源に近いどころで行なうのが効果的であるこ
とは言うまでもない。It goes without saying that the basic idea behind such noise removal is that it is effective to remove it as close to the source as possible.
本発明の目的は、上記従来技術の欠点を改良し、でざる
だり雑音幅9寸または不要幅用を低減した新しい構造の
ハイブリッドICを提供りることである。SUMMARY OF THE INVENTION An object of the present invention is to improve the drawbacks of the prior art described above and to provide a hybrid IC with a new structure that reduces noise width by 9 inches or unnecessary width.
上記目的を達成するために本発明は、スイッチング素子
を含んだハイブリヅI−” I Cにおいて、前記ハイ
プリントICの一部もしくは全部を、フエライ[−粉体
を混入した樹脂によりモール1−することを特徴とJる
ものである。In order to achieve the above object, the present invention provides a hybrid IC including a switching element, in which a part or all of the high print IC is molded with a resin mixed with ferrite powder. It is characterized by the following.
本発明において、上記フェライト粉体どしで(J、Ni
−Zn系、 MIT −Z If系、〜1n−MQ系
、またはC1−7n系のソフトフエライl−f5)末を
用いると、より効果的である。In the present invention, the above ferrite powder (J, Ni
It is more effective to use -Zn-based, MIT-Z If-based, ~1n-MQ-based, or C1-7n-based soft ferrite l-f5) powder.
以下本発明を実施例により詳細に説明する。The present invention will be explained in detail below with reference to Examples.
第1図は従来のハイブリッドICの一実施例を示す概略
断面図であり、スイッチング素子をもつハイブリッドI
Cをエポキシ系又はレジン系の樹脂をコー°フイングし
、外部の湿気やほこり等の異物から回路部品を保護しよ
うとするものである。FIG. 1 is a schematic cross-sectional view showing an example of a conventional hybrid IC, and is a hybrid IC having a switching element.
C is coated with epoxy or resin resin to protect circuit components from external moisture, dust, and other foreign substances.
第2図は第1図の4ht、 迄のものをケースに入れた
ものである。しかしながら、かかる(j造のハイブリッ
ドICにおいては、ICからの輻射ノイズに対する考慮
がなく、比較的大電力容量のスイッチング回路を含む時
には、外部にもれる輻射ノイズ7を除去することは困難
であり、約70dbでありだ、第3図は本発明によるハ
イブリッドの一実施例を示す概略構成説明図である。ス
イッチング素子3を搭載した基板2の上部の部品側に、
フェライトわ)体と絶縁性樹脂をある一定の割合で゛混
合した樹脂5でモールドを施したものである。本実施例
−Cはフェライト粉としてN!−711系の71ライト
を用い、イム1脂としてシリコン系の材料を使用した。Figure 2 shows the items up to 4h in Figure 1 in a case. However, in such a hybrid IC, there is no consideration given to radiation noise from the IC, and when it includes a switching circuit with a relatively large power capacity, it is difficult to remove the radiation noise 7 leaking to the outside. Fig. 3 is a schematic configuration diagram showing an embodiment of the hybrid according to the present invention.On the component side of the upper part of the board 2 on which the switching element 3 is mounted,
It is molded with resin 5, which is a mixture of ferrite body and insulating resin at a certain ratio. This Example-C is N! as a ferrite powder. -711 series 71 light was used, and a silicone-based material was used as Im1 fat.
前記構成の本発明ハイブリッドICによれば、外部に漏
れる輻射ノイズは極めて少なくなり、イタれたノイズ特
性を示した。According to the hybrid IC of the present invention having the above-mentioned configuration, the radiation noise leaking to the outside was extremely reduced, and exhibited poor noise characteristics.
第4図は本発明によるハイブリッドIC1の構造の曲の
一例を示す実施例の概略断面図である。前記ノエライ[
−混入樹脂5を用いて基板の両面を完全に覆うようにモ
ールドし、さらに、それを金属ケース8内に納めた構造
のものである。本実施あのものにJ3いても第3図に示
したものと同様に侵れた特性を示し、輻射ノイズを50
d3以下にlil減することができた。FIG. 4 is a schematic cross-sectional view of an embodiment showing an example of the structure of the hybrid IC 1 according to the present invention. Said Noelai [
- It has a structure in which the mixed resin 5 is molded so as to completely cover both sides of the board, and it is further housed in a metal case 8. Even if J3 was used in this implementation, it showed the same deteriorated characteristics as shown in Figure 3, and the radiation noise was reduced to 50%.
I was able to reduce it to below d3.
ざらに、前記本発明にお1)るモールド材は、熱伝導性
が非常に良好であり、回路の局部的発熱による素子の温
度上がが抑制されるため、回路の信頼性を著しく向上さ
せることかてさる効果がある。In general, the molding material according to 1) of the present invention has very good thermal conductivity and suppresses the rise in temperature of the element due to local heat generation in the circuit, thereby significantly improving the reliability of the circuit. It has a significant effect.
以上実施例を用いC説明した通り、スイッチング素子を
含むハイフリットICをフェライト粉体を混入した樹脂
でモールドする本発明の構造にり−れは、輻射ノイズを
大幅に軽減することがでさ、高倍リイ(性の電子回路を
実現することがでさるためイの工業上の効果は大きい。As explained above using the embodiments, the structure of the present invention in which a high frit IC including a switching element is molded with a resin mixed with ferrite powder can significantly reduce radiation noise. The industrial effects of this technology are great because it makes it possible to realize high-performance electronic circuits.
第1図、第2図は従来のハイブリッドICのf、j造例
を示す断面図、第3図は本発明によるハイブリッドIC
の一実施例を示す概略構成断面図、第4図は本発明によ
るハイブリッドICの他の実施例を示す概略構成断面図
である。
1;ケース、2;基板、3;スイッチング素子。
4;樹脂、5;フェライト粉(本を混入した樹脂。
G;プリンt−基板実装用ピン、7;輻射ノイズ。
8:金属ケースFIGS. 1 and 2 are cross-sectional views showing examples of f and j structures of conventional hybrid ICs, and FIG. 3 is a cross-sectional view of a hybrid IC according to the present invention.
FIG. 4 is a schematic cross-sectional view showing another embodiment of the hybrid IC according to the present invention. 1; case, 2; substrate, 3; switching element. 4: Resin, 5: Ferrite powder (resin mixed with books. G: Print T-board mounting pin, 7: Radiation noise. 8: Metal case
Claims (1)
リントICの一部もしくは全部を、フェライh ”15
) 1本を)昆大した樹脂によりモールドしたことを特
徴とづるハイブリッド1c 2、特許請求の範囲第1項に記載された電子回路におい
で、上記フエライ[・粉体どしてNi −Zll系、C
u−7]1系のラフ1−フエライト粉末を用いたことを
特徴とターるハイブリッド1c[Claims] 1. Part or all of the Innolint IC including an electronic circuit having a switching element,
2. In the electronic circuit according to claim 1, the hybrid 1c is characterized in that one of the ferrite powders is molded with a highly sized resin. , C
Hybrid 1c characterized by using rough 1-ferrite powder of u-7] 1 series
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58006198A JPS59132150A (en) | 1983-01-18 | 1983-01-18 | Hybrid ic |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58006198A JPS59132150A (en) | 1983-01-18 | 1983-01-18 | Hybrid ic |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59132150A true JPS59132150A (en) | 1984-07-30 |
Family
ID=11631836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58006198A Pending JPS59132150A (en) | 1983-01-18 | 1983-01-18 | Hybrid ic |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59132150A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02109352A (en) * | 1988-10-18 | 1990-04-23 | Mitsubishi Electric Corp | Resin sealing material for hybrid ic |
JP2012248848A (en) * | 2011-05-30 | 2012-12-13 | Samsung Electronics Co Ltd | Semiconductor element, semiconductor package, and electronic device |
-
1983
- 1983-01-18 JP JP58006198A patent/JPS59132150A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02109352A (en) * | 1988-10-18 | 1990-04-23 | Mitsubishi Electric Corp | Resin sealing material for hybrid ic |
JP2012248848A (en) * | 2011-05-30 | 2012-12-13 | Samsung Electronics Co Ltd | Semiconductor element, semiconductor package, and electronic device |
US9496226B2 (en) | 2011-05-30 | 2016-11-15 | Samsung Electronics Co., Ltd. | Semiconductor device, semiconductor package, and electronic device |
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