JPS59128733U - 3-V group compound semiconductor surface treatment equipment - Google Patents
3-V group compound semiconductor surface treatment equipmentInfo
- Publication number
- JPS59128733U JPS59128733U JP23884U JP23884U JPS59128733U JP S59128733 U JPS59128733 U JP S59128733U JP 23884 U JP23884 U JP 23884U JP 23884 U JP23884 U JP 23884U JP S59128733 U JPS59128733 U JP S59128733U
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- surface treatment
- group compound
- container
- treatment equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図、第２図は本考案を実施した一例を示す■−■族
化合物半導体の表面処理装置について、主に断面を示し
た説明図である。
図中、１．２１は一連の手順が実施できる容器本体を２
，２２は処理される■−■族化合物半導体ウェハーを、
３．２３はウェハー支持台を、４゜７．２５および２７
はウェハー２．２２の高さより高い容器１，２１の位置
に設けられた導入排出パイプを、１３は同じくウェハー
の高さより高い位置に設けられた導入排出口を、１４は
容器の底部に設けられた導入排出口を、２Ｂは同じく容
器の底部に設けられた導入排出パイプを、１２は分岐さ
れた導入排出パイプを、６．２６は容器のフタを、３２
は水を流すフタの中空部分を、５．８゜９．１０，２９
．３０および３１は種々の気体や蒸気や液体を制御する
バルブを示す。１１． ２４はウェハー支持台３．２３
を加熱するためのヒータで容器内の温度を任意に制御す
る。FIGS. 1 and 2 are explanatory diagrams mainly showing cross sections of a surface treatment apparatus for a ■-■ group compound semiconductor showing an example of implementing the present invention. In the figure, 1.21 indicates the container body in which a series of procedures can be performed.
, 22 represents the ■-■ group compound semiconductor wafer to be processed;
3.23 is the wafer support stand, 4°7.25 and 27
13 is an inlet/exhaust pipe provided at a position of the containers 1 and 21 higher than the height of the wafers 2 and 22, 13 is an inlet/exhaust port also provided at a location higher than the wafer height, and 14 is an inlet/exhaust pipe provided at the bottom of the container. 2B is the introduction/discharge pipe provided at the bottom of the container, 12 is the branched introduction/discharge pipe, 6.26 is the lid of the container, 32
The hollow part of the lid that drains water is 5.8°9.10,29
．． 30 and 31 indicate valves for controlling various gases, vapors, and liquids. 11. 24 is the wafer support stand 3.23
The temperature inside the container can be arbitrarily controlled using a heater.
Claims (1)
られた処理容器で、かつ上記液体あるいは蒸気あるいは
気体の導入および排出を兼ねる口もしくはパイプを少な
くとも２つ以上有し、該導入排出口もしくはパイプの少
なくとも１つが被処理ウェハーの上記容器内装填時の高
さ以上の位置に上記導入排出口もしくはパイプの先端が
設けられ、他の少なくとも１つの口もしくはパイプが上
記容器底部に設けられ、かつ上記各々の導入排出口もし
くはパイプに接続したパイバルブが設けられた処理容器
であることを特徴とするＩ−Ｖ族化合物半導体の表面処
理装置。A processing container that is filled with liquid, vapor, or gas and has a lid on the top, and that has at least two or more ports or pipes that also serve as the introduction and discharge of the liquid, vapor, or gas; At least one of the inlet and outlet ports or the tip of the pipe is provided at a position higher than the height when the wafer to be processed is loaded into the container, and at least one other port or pipe is provided at the bottom of the container, and each of the above 1. A surface treatment apparatus for a group IV compound semiconductor, characterized in that the processing container is equipped with a pie valve connected to an inlet/outlet or a pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23884U JPS59128733U (en) | 1984-01-05 | 1984-01-05 | 3-V group compound semiconductor surface treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23884U JPS59128733U (en) | 1984-01-05 | 1984-01-05 | 3-V group compound semiconductor surface treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59128733U true JPS59128733U (en) | 1984-08-30 |
| JPS6322671Y2 JPS6322671Y2 (en) | 1988-06-22 |
Family
ID=30131994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23884U Granted JPS59128733U (en) | 1984-01-05 | 1984-01-05 | 3-V group compound semiconductor surface treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59128733U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004001830A1 (en) * | 2002-06-25 | 2003-12-31 | Tokyo Electron Limited | Substrate processing device |
-
1984
- 1984-01-05 JP JP23884U patent/JPS59128733U/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004001830A1 (en) * | 2002-06-25 | 2003-12-31 | Tokyo Electron Limited | Substrate processing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6322671Y2 (en) | 1988-06-22 |
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