JPS59127287A - 不揮発性メモリ装置 - Google Patents
不揮発性メモリ装置Info
- Publication number
- JPS59127287A JPS59127287A JP57228700A JP22870082A JPS59127287A JP S59127287 A JPS59127287 A JP S59127287A JP 57228700 A JP57228700 A JP 57228700A JP 22870082 A JP22870082 A JP 22870082A JP S59127287 A JPS59127287 A JP S59127287A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic element
- writing
- magnetic field
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57228700A JPS59127287A (ja) | 1982-12-28 | 1982-12-28 | 不揮発性メモリ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57228700A JPS59127287A (ja) | 1982-12-28 | 1982-12-28 | 不揮発性メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59127287A true JPS59127287A (ja) | 1984-07-23 |
JPS6118279B2 JPS6118279B2 (enrdf_load_stackoverflow) | 1986-05-12 |
Family
ID=16880426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57228700A Granted JPS59127287A (ja) | 1982-12-28 | 1982-12-28 | 不揮発性メモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59127287A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11110961A (ja) * | 1997-10-02 | 1999-04-23 | Canon Inc | 磁気薄膜メモリ |
JP2008227529A (ja) * | 1996-05-06 | 2008-09-25 | Seagate Technology Internatl | ホール効果装置及びその動作方法 |
-
1982
- 1982-12-28 JP JP57228700A patent/JPS59127287A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008227529A (ja) * | 1996-05-06 | 2008-09-25 | Seagate Technology Internatl | ホール効果装置及びその動作方法 |
JPH11110961A (ja) * | 1997-10-02 | 1999-04-23 | Canon Inc | 磁気薄膜メモリ |
Also Published As
Publication number | Publication date |
---|---|
JPS6118279B2 (enrdf_load_stackoverflow) | 1986-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100443545B1 (ko) | Mram 장치 | |
US7212432B2 (en) | Resistive memory cell random access memory device and method of fabrication | |
US6370056B1 (en) | Ferroelectric memory and method of operating same | |
US7995402B2 (en) | Method for erasing a semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell | |
KR100971059B1 (ko) | 반도체 기억 장치 | |
US5838609A (en) | Integrated semiconductor device having negative resistance formed of MIS switching diode | |
EP1575055B1 (en) | Cmis semiconductor nonvolatile storage circuit | |
TWI239632B (en) | Semiconductor memory device | |
JPH0745794A (ja) | 強誘電体メモリの駆動方法 | |
US4831427A (en) | Ferromagnetic gate memory | |
US7710759B2 (en) | Nonvolatile ferroelectric memory device | |
US6614682B2 (en) | Magnetic material memory and information reproducing method of the same | |
US4803658A (en) | Cross tie random access memory | |
JPS59127287A (ja) | 不揮発性メモリ装置 | |
JP3878370B2 (ja) | 不揮発性メモリおよびその駆動方法 | |
JP4124844B2 (ja) | 磁気薄膜メモリ | |
KR100682180B1 (ko) | 불휘발성 강유전체 메모리 장치 | |
JPWO2003052828A1 (ja) | 半導体装置 | |
US7449760B2 (en) | Magnetoresistive element, magnetic memory cell, and magnetic memory device | |
JP2002334573A (ja) | 磁気メモリ及びその書き込み方法 | |
GB2148635A (en) | Integrated circuit memories | |
JPS5955059A (ja) | 不揮発性ランダムアクセスメモリ装置 | |
JPS6166287A (ja) | 磁気バブルメモリ装置 | |
JPS5918795B2 (ja) | 半導体記憶装置 | |
JPH03295273A (ja) | 記憶装置 |