JPS59115547A - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device

Info

Publication number
JPS59115547A
JPS59115547A JP22553782A JP22553782A JPS59115547A JP S59115547 A JPS59115547 A JP S59115547A JP 22553782 A JP22553782 A JP 22553782A JP 22553782 A JP22553782 A JP 22553782A JP S59115547 A JPS59115547 A JP S59115547A
Authority
JP
Japan
Prior art keywords
resin
grooves
heat sink
pellet
steps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22553782A
Other languages
Japanese (ja)
Other versions
JPH0312466B2 (en
Inventor
Yoshimasa Kudo
工藤 好正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22553782A priority Critical patent/JPS59115547A/en
Publication of JPS59115547A publication Critical patent/JPS59115547A/en
Publication of JPH0312466B2 publication Critical patent/JPH0312466B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

PURPOSE:To reduce the invasion of moisture into a resin-sealed semiconductor device and to enable to exhaust water content which has once been introduced into the device by forming a plurality of steps on a heat sink plate while positioning a semiconductor element pellet at the periphery of the pellet when mounting the pellet on the plate and molding it with resin and opening a plurality of grooves between the steps, thereby lengthening the water content introducing passage. CONSTITUTION:When a semiconductor pellet 12 is mounted on a heat sink plate 11, steps 13 are respectively formed at the ends of the plate 11 corresponding to the sides of the pellet 12. Then, a plurality of grooves 14 are formed in parallel between adjacent steps 13, and resin 15 is molded on the entire surface which includes the grooves. In this manner, the moving distance of the water content which is invaded via the steps 13 and the grooves 14 is lengthened, and the exhaust of the water content produced in the resin mold 15 can be, on the contrary, readily exhausted out of a semiconductor device. Accordingly, the rate of causing troubles in high humidity atmosphere can decrease, thereby increasing the lifetime of the device.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は樹脂封止型半導体装置に係り、特に放熱板を有
する樹脂封止型半導体の防湿構造に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a resin-sealed semiconductor device, and more particularly to a moisture-proof structure for a resin-sealed semiconductor having a heat sink.

〔発明の技術的背景およびその問題点〕半導体装置のパ
ッケージとしてはセラミツクツRツケージや樹脂封止・
ぞツケージがあるが、樹脂封止・ぞツケージは量産に適
し、低価格であり広く用いられている。しかし樹脂封止
・ぞツケージは気密性が劣るという欠点があり、特に放
熱板を有する半導体装置では樹脂と放熱板である金属板
との境界部が長く、微細な割れ目から侵入する水分を阻
止することが容易でない。
[Technical background of the invention and its problems] As a package for semiconductor devices, ceramic R-taskage, resin sealing,
There is a resin-sealed cage, but the resin-sealed cage is widely used because it is suitable for mass production and is inexpensive. However, resin-sealed groove cages have the disadvantage of poor airtightness, and especially in semiconductor devices that have a heat sink, the boundary between the resin and the metal plate that is the heat sink is long, preventing moisture from entering through minute cracks. It's not easy.

第1図は放熱板を有する半導体装置の内部構造を示す一
部切欠斜視図であって、金属でできた放熱板1の上に半
導体チップ2がマウント材3で固定され、リード4と半
導体ペレット2はアルミニウム等のワイヤ5で接続され
ており、エポキシ樹脂等の樹脂6で放熱板1の底面およ
び突起部1a。
FIG. 1 is a partially cutaway perspective view showing the internal structure of a semiconductor device having a heat sink, in which a semiconductor chip 2 is fixed with a mounting material 3 on a heat sink 1 made of metal, and leads 4 and semiconductor pellets are mounted on the heat sink 1. 2 is connected with a wire 5 made of aluminum or the like, and the bottom surface of the heat sink 1 and the protrusion 1a are connected with a resin 6 such as epoxy resin.

リード4を除きモールドされている。All except lead 4 are molded.

また第2図および第3図は同様の構造を有するフラット
ノ七ツケージ型の半導体装置を示しており第2図は平面
図、第3図はそのAA断面図である。
Further, FIGS. 2 and 3 show a flat seven cage type semiconductor device having a similar structure, with FIG. 2 being a plan view and FIG. 3 being an AA sectional view thereof.

なお、第2図および第3図においては形状の異なるリー
Pを4′とした他は第1図と同じものは同一符号として
いる。
In addition, in FIGS. 2 and 3, the same parts as in FIG. 1 are given the same reference numerals, except that the lee P having a different shape is changed to 4'.

このような構造を有する半導体装置を多湿な環境で用い
ると、放熱板1とモールド樹脂6との境界部7から水分
が侵入し、半導体ペレット2の表面上の電極およびワイ
ヤ5を腐食して断線を生以故障の原因となることがある
When a semiconductor device having such a structure is used in a humid environment, moisture enters through the boundary 7 between the heat sink 1 and the molding resin 6, corroding the electrodes and wires 5 on the surface of the semiconductor pellet 2, and causing disconnection. may cause permanent damage.

このような故障をなくすため、第4図および第5図に示
すような半導体装置が提案されている。
In order to eliminate such failures, semiconductor devices as shown in FIGS. 4 and 5 have been proposed.

第4図および第5図は放熱板1の上に半導体ペレットを
取り付けた状態を示す平面図であって、第4図の場合は
半導体ペレット20回りの放熱板1上に半導体ペレット
2を無端状で取り囲む複数の突起または溝8を同心円状
に設けたものであり、第5図の場合は半導体ペレット2
の辺に対応する放熱板1の端部に段部9を設けたもので
ある。
4 and 5 are plan views showing the semiconductor pellets attached on the heat sink 1. In the case of FIG. 4, the semiconductor pellets 2 are placed on the heat sink 1 around the semiconductor pellets 20 in an endless shape. A plurality of protrusions or grooves 8 are provided concentrically surrounding the semiconductor pellet 2 in the case of FIG.
A stepped portion 9 is provided at the end of the heat sink 1 corresponding to the side.

このような構造では水分は半導体ペレット2に向って浸
透する際、溝8や段部9によってさえぎられるため浸透
を遅らせることができ故障の発生も少ない。また第5図
の場合は放熱板と樹脂とのなじみが良く、はがれを生じ
にくいという特徴がある。
In such a structure, when moisture permeates toward the semiconductor pellet 2, it is blocked by the grooves 8 and the step portions 9, so that the permeation can be delayed and failures are less likely to occur. In addition, the case shown in FIG. 5 has a characteristic that the heat sink and the resin fit well together, and peeling does not easily occur.

しかし、このような構造でも放熱板1とモールド樹脂6
との境界部から水分が侵入しやすいことに変りはなく、
湿気の多い環境では長期間の間には故障が生じやすいこ
とに変りはない。また、特に第4図の構造では一旦溝8
0部分に貯った水分は逆にいつまでも残ってしまい、か
えって水分の悪影響が生じてし甘う問題もある。
However, even with this structure, the heat sink 1 and the mold resin 6
There is no change in the fact that moisture can easily enter from the boundary between the
In a humid environment, failures are likely to occur over a long period of time. In addition, especially in the structure shown in Fig. 4, once the groove 8
On the other hand, the moisture accumulated in the 0 part remains forever, and the problem is that the moisture may have an adverse effect.

〔発明の目的〕[Purpose of the invention]

そこで、本発明は水分が半導体ペレットに達することが
少なく故障の少ない放熱板付の樹脂封止型半導体装置を
提供することを目的とする。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a resin-sealed semiconductor device with a heat sink that prevents moisture from reaching semiconductor pellets and causes fewer failures.

〔発明の概要〕[Summary of the invention]

上記目的達成のため、本発明においては半導体ペレット
を取付けである放熱板の周縁に段部を設け、この段部ど
うしを接続する複数の溝または突ておシ、水分の侵入が
少くまた半導体装置内に水分が蓄積しないため水分の侵
入にともなう故障が少ないものである。
In order to achieve the above object, in the present invention, a stepped portion is provided at the periphery of the heat sink to which the semiconductor pellet is attached, and a plurality of grooves or protrusions are provided to connect the stepped portions. Since moisture does not accumulate inside the device, there are fewer failures due to moisture intrusion.

〔発明の実施例〕[Embodiments of the invention]

以下本発明の実施例を図面を参照しながら説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第6図ないし第8図は本発明の実施例のいくつかを示す
平面図であって、樹脂モールド前の放熱板11と半導体
ベレツ)12との関係を示している。
6 to 8 are plan views showing some embodiments of the present invention, and show the relationship between the heat sink 11 and the semiconductor plate 12 before resin molding.

第6図においては、半導体ペレット12の各辺に対応し
た放熱板11の端部には段部13が設けられており、こ
れらの段部どうしは深さおよび幅がそれぞれ0.2mm
程度の複数本の溝14で接続されている。
In FIG. 6, stepped portions 13 are provided at the ends of the heat sink 11 corresponding to each side of the semiconductor pellet 12, and the depth and width of these stepped portions are each 0.2 mm.
They are connected by a plurality of grooves 14 of about 100 mm.

この溝の形状の例は第9図のBB拡大断面図に示されて
おり、第9図(、)のような横断面V字形状溝14a1
第9図(b)のような横断面V字形状溝14bの端部に
突起16を有するもの、第9図(c)のような横断面台
形状溝14cなどが使用できる。また段部13  ′の
形状の例は第10図のCC拡大断面図に示されており、
第10図(、)に示すような放熱板11の上面のみに厚
さの変化があって先端が矩形状の段部13a1放熱板1
1の上面のみに厚さの変化があって先端に突起のある段
部13b1放熱板11の上面および下面に厚さの変化が
ある段部13cなどが可能である。
An example of the shape of this groove is shown in the BB enlarged sectional view of FIG.
A groove 14b having a V-shaped cross section and a protrusion 16 at the end as shown in FIG. 9(b), a groove 14c having a trapezoidal cross section as shown in FIG. 9(c), etc. can be used. An example of the shape of the stepped portion 13' is shown in the CC enlarged sectional view of FIG.
A stepped portion 13a1 having a rectangular tip and a thickness change only on the upper surface of the heat sink 11 as shown in FIG.
A stepped portion 13b having a protrusion at the tip and having a thickness change only on the upper surface of the heat dissipating plate 11, and a stepped portion 13c having a thickness change on the upper and lower surfaces of the heat dissipation plate 11, etc. are possible.

このような溝14や段部13は打抜き加工、エンボス加
工等公知の方法で形成することが可能である。
Such grooves 14 and step portions 13 can be formed by known methods such as punching and embossing.

第7図は第6図とほぼ同様の構造を示しているが、段部
13′は放熱板11’の全周にわたっている点に相違が
ある。
FIG. 7 shows almost the same structure as FIG. 6, but the difference is that the stepped portion 13' extends over the entire circumference of the heat sink 11'.

第8図においては、端部に段部13″を有する放熱板1
1“の端面近くに置かれた半導体ペレット12を3辺方
向で囲むように溝14’が設けられている。
In FIG. 8, a heat sink 1 having a stepped portion 13'' at the end
A groove 14' is provided so as to surround the semiconductor pellet 12 placed near the end surface of the semiconductor pellet 12 on three sides.

これらの溝14 、14’および段部1311.3’ 
113”は半導体ペレット12からほぼ等距離の位置に
あるように半導体ペレットを取囲んでいる。
These grooves 14, 14' and steps 1311.3'
113'' surrounds the semiconductor pellet 12 so as to be approximately equidistant from the semiconductor pellet 12.

また、第6図ないし第8図の実施例においては段部13
 、1.3’ 、13“と溝14.14’の底とはほぼ
同一の高さとなっている。
Further, in the embodiments shown in FIGS. 6 to 8, the stepped portion 13
, 1.3', 13'' and the bottom of the groove 14, 14' are approximately at the same height.

半導体−ミレット12から図示しないリードへのワイヤ
ポンディングが終了後、樹脂モールディングが行われる
が、この樹脂モールド15は一点鎖線で示されている。
After wire bonding from the semiconductor millet 12 to leads (not shown) is completed, resin molding is performed, and this resin mold 15 is indicated by a dashed line.

以上のような段部と溝は外部から侵入する水分が移動す
る経路を長くすることになるとともに、逆に樹脂モール
P内部に生じた水分を装置外に導びく槻能を有する。こ
れは第8図の実施例において顕著であり、モールF″L
5の曲線部15aにおいて最も侵入しやすい水分は溝1
4’により放熱板11″の段部13“に導びかれ、この
段部13“を伝わって装置外に排出される。
The steps and grooves described above lengthen the path for moisture entering from the outside to move, and conversely have the ability to guide moisture generated inside the resin molding P to the outside of the device. This is remarkable in the embodiment shown in FIG. 8, and the mall F″L
In the curved portion 15a of No. 5, moisture is most likely to enter groove 1.
4' to the stepped portion 13'' of the heat dissipation plate 11'', and is discharged from the apparatus through the stepped portion 13''.

また、段部13113 ’+ 13”は放熱板11 、
ll’、 11“とモール1′15の密着度を向上させ
るj++能を有する。
In addition, the stepped portion 13113'+13'' is the heat sink 11,
ll', 11'' and the molding 1'15.

第11図は本発明の適用による耐湿特性の向上の様子を
示したグラフであって第2図、第4図、第5図の従来例
と第7図の本発明の実施例の構造のものを2種類の樹脂
で作り温度120°C1圧力2kg/〜の水の中に入れ
た時間と累積故障率との関係を調べた結果をワイプル確
率紙で示したものである。これによれば接着度の弱い樹
脂Aおよび接着度の強い樹脂Bのいずれにおいても本発
明適用品の寿命は長いが、特に接着度が強く樹脂のはが
れが少ない樹脂Bにおいては飛躍的に寿命が伸びている
ことがわかる。
FIG. 11 is a graph showing how the moisture resistance is improved by applying the present invention, and shows the structure of the conventional example shown in FIGS. 2, 4, and 5, and the structure of the embodiment of the present invention shown in FIG. The results of an investigation of the relationship between the cumulative failure rate and the time the product was made from two types of resin and immersed in water at a temperature of 120° C. and a pressure of 2 kg/~ are shown on Wiiple probability paper. According to this, the life of the product to which the present invention is applied is long with both resin A, which has a weak adhesiveness, and resin B, which has a strong adhesiveness, but the lifespan is dramatically longer with resin B, which has a particularly strong adhesiveness and less peeling of the resin. You can see that it is growing.

以上の実施例においては、放熱板の段部間を接続するの
は溝であったが、突起であっても同じ効果を有する。ま
たこれらの溝または突起の断面形状は実施例に示したも
のに限られず種々の変形が可能である。また、溝または
突起の配置形状も実施例のような直線状に限られること
なく円弧状その他任意の形状が可能である。
In the above embodiments, grooves were used to connect the stepped portions of the heat sink, but the same effect can be obtained even if the grooves are used as projections. Furthermore, the cross-sectional shapes of these grooves or protrusions are not limited to those shown in the embodiments, and can be modified in various ways. Furthermore, the arrangement shape of the grooves or protrusions is not limited to the linear shape as in the embodiments, but may be arcuate or any other shape.

〔発明の効果〕〔Effect of the invention〕

以上のような本発明にかかる半導体装置によれば、半導
体ペレットは、放熱板の周縁に設けられた段部と、この
段部どうしを接続する複数の溝または突起により取囲ま
れているので、水分の侵入経路が長くなって水分の侵入
が少くなるとともに溝または突起の存在により一旦侵入
した水分も再び外部に排出されることになり、半導体ペ
レットに水分の付着する確率が少なくなって高湿度雰囲
気中でも故障発生率が低く長寿命を達成できる。
According to the semiconductor device according to the present invention as described above, since the semiconductor pellet is surrounded by the stepped portion provided at the periphery of the heat sink and the plurality of grooves or protrusions connecting the stepped portions, The path of moisture intrusion becomes longer, reducing the amount of moisture intrusion, and the presence of grooves or protrusions also allows moisture that has once entered to be drained outside again, reducing the probability of moisture adhering to the semiconductor pellet, resulting in high humidity. Even in an atmosphere, the failure rate is low and long life can be achieved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の樹脂封止型半導体装置の構造を示す一部
切欠斜視図、第2図および第3図は従来の他の樹脂封止
型半導体装置の構造を示す平面図および断面図、第4図
および第5図は従来の放熱板の構造を示す平面図、第6
図ないし第8図は本発明の実施例である放熱板の構造を
示す平面図、第9図は溝の形状を示す拡大断面図、第1
0図は段部の形状を示す拡大断面図、第11図は本発明
を適用した樹脂封止型半導体装置と従来のものとの寿命
試験結果を比較するグラフである。 1.11・・・放熱板、2.12・・・半導体ペレット
、4、・・リード、6,16・・・樹脂モールド、13
 、13’ 、 13 ”・・・段部、14 、14 
’・・・溝。 出願人代理人  猪  股    清
FIG. 1 is a partially cutaway perspective view showing the structure of a conventional resin-sealed semiconductor device; FIGS. 2 and 3 are a plan view and a sectional view showing the structure of another conventional resin-sealed semiconductor device; Figures 4 and 5 are plan views showing the structure of a conventional heat sink;
9 to 8 are plan views showing the structure of a heat sink according to an embodiment of the present invention, FIG. 9 is an enlarged sectional view showing the shape of the grooves, and FIG.
FIG. 0 is an enlarged sectional view showing the shape of the stepped portion, and FIG. 11 is a graph comparing the life test results of a resin-sealed semiconductor device to which the present invention is applied and a conventional one. 1.11... Heat sink, 2.12... Semiconductor pellet, 4... Lead, 6, 16... Resin mold, 13
, 13', 13''...Stepped portion, 14, 14
'···groove. Applicant's agent Kiyoshi Inomata

Claims (1)

【特許請求の範囲】[Claims] 半導体素子ペレットを放熱板に取付けて樹脂モールドを
行った樹脂封止型半導体装置において、前記放熱板の周
縁に設けた段部と、この段部どうじを接続する複数の溝
または突起とを有し、これらの段部と溝または突起とに
より、前記半導体ペレットを取囲むようにしてなる樹脂
封止型半導体装置。
A resin-sealed semiconductor device in which a semiconductor element pellet is attached to a heat sink and resin molded, the device having a stepped portion provided at the periphery of the heat sink, and a plurality of grooves or protrusions connecting the stepped portions. . A resin-sealed semiconductor device in which the semiconductor pellet is surrounded by the stepped portion and the groove or the protrusion.
JP22553782A 1982-12-22 1982-12-22 Resin-sealed semiconductor device Granted JPS59115547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22553782A JPS59115547A (en) 1982-12-22 1982-12-22 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22553782A JPS59115547A (en) 1982-12-22 1982-12-22 Resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPS59115547A true JPS59115547A (en) 1984-07-04
JPH0312466B2 JPH0312466B2 (en) 1991-02-20

Family

ID=16830843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22553782A Granted JPS59115547A (en) 1982-12-22 1982-12-22 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS59115547A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6437427B1 (en) * 1998-09-15 2002-08-20 Amkor Technology, Inc. Lead frame used for the fabrication of semiconductor packages and semiconductor package fabricated using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6437427B1 (en) * 1998-09-15 2002-08-20 Amkor Technology, Inc. Lead frame used for the fabrication of semiconductor packages and semiconductor package fabricated using the same

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JPH0312466B2 (en) 1991-02-20

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