JP2997182B2 - Resin encapsulated semiconductor device for surface mounting - Google Patents

Resin encapsulated semiconductor device for surface mounting

Info

Publication number
JP2997182B2
JP2997182B2 JP7102076A JP10207695A JP2997182B2 JP 2997182 B2 JP2997182 B2 JP 2997182B2 JP 7102076 A JP7102076 A JP 7102076A JP 10207695 A JP10207695 A JP 10207695A JP 2997182 B2 JP2997182 B2 JP 2997182B2
Authority
JP
Japan
Prior art keywords
resin
molding
cross
semiconductor device
parting line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP7102076A
Other languages
Japanese (ja)
Other versions
JPH08298268A (en
Inventor
光雄 太田
貞之 吉田
Original Assignee
松下電子工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=14317688&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2997182(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 松下電子工業株式会社 filed Critical 松下電子工業株式会社
Priority to JP7102076A priority Critical patent/JP2997182B2/en
Publication of JPH08298268A publication Critical patent/JPH08298268A/en
Application granted granted Critical
Publication of JP2997182B2 publication Critical patent/JP2997182B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、面実装用樹脂封止半導
体装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device for surface mounting.

【0002】[0002]

【従来の技術】従来の面実装用樹脂封止半導体装置に
は、図3(a)の平面図、同図(b)の立面図、同図
(c)の右側面図に示すように、樹脂成形部15が一端
部(以下「上樹脂成形部」という)12と、それよりも
樹脂成形厚みの薄い他端部(以下「下樹脂成形部」とい
う)11とが内部リード線を挟んで一体成形されてお
り、外部リード線14が下樹脂成形部11側からその底
面17と同一面に一方の面が位置するよう配置されたも
のがある。そして、上樹脂成形部12と下樹脂成形部1
1との接合部(以下「パーティングライン」という)1
3における両者の接合断面サイズが同一になっている。
すなわち、上樹脂成形部12と下樹脂成形部11のパー
ティングライン13を通る断面の大きさが同じである。
2. Description of the Related Art As shown in a plan view of FIG. 3A, an elevation view of FIG. 3B, and a right side view of FIG. The resin molded part 15 has one end (hereinafter referred to as “upper resin molded part”) 12 and the other end (hereinafter referred to as “lower resin molded part”) 11 having a smaller resin molded thickness sandwiches the internal lead wire. In some cases, the external lead wire 14 is arranged so that one surface is located on the same surface as the bottom surface 17 from the lower resin molded portion 11 side. Then, the upper resin molding section 12 and the lower resin molding section 1
1 (hereinafter referred to as "parting line")
3 has the same joint cross-sectional size.
That is, the sizes of the cross sections of the upper resin molded part 12 and the lower resin molded part 11 passing through the parting line 13 are the same.

【0003】このような面実装用樹脂封止半導体装置の
樹脂封止部の成形には、図4に要部のみ示したように、
上樹脂成形部成形用金型18(図4(a))と下樹脂成
形部成形用金形19(図4(b))とに二分割され、か
つそれぞれ上下金型18,19の分割面の各サイズが同
一である樹脂成形用金型20が用いられている。なお、
図4(c)は図4(a)のA−A線に沿った断面図、図
4(d)は図4(b)のB−B線に沿った断面図であ
る。
As shown in FIG. 4, only the main part of the resin-sealed portion of the surface-mounted resin-sealed semiconductor device is formed as follows.
The upper resin molded part molding die 18 (FIG. 4 (a)) and the lower resin molded part molding die 19 (FIG. 4 (b)) are divided into two parts. The resin molding die 20 having the same size is used. In addition,
4C is a cross-sectional view taken along line AA of FIG. 4A, and FIG. 4D is a cross-sectional view taken along line BB of FIG. 4B.

【0004】[0004]

【発明が解決しようとする課題】樹脂封止金型の半導体
装置では、一般に樹脂封止成形後に樹脂のばり取りをし
て仕上げるのであるが、上述のような面実装用樹脂封止
半導体装置では、この樹脂ばり取り工程で、樹脂成形部
の厚みの薄い方の下樹脂成形部11に、割れや欠け、ま
たはクラックが発生するのが認められた。
Generally, a resin-sealed mold semiconductor device is finished by deburring the resin after resin-sealing molding. In this resin deburring step, it was observed that cracks, chips or cracks occurred in the lower resin molded portion 11 having the smaller thickness of the resin molded portion.

【0005】その原因について調査したところ、樹脂成
形過程で上樹脂成形部12と下樹脂成形部11とが接合
面でずれた状態で樹脂封止され、図5(a)の平面図、
同図(b)の立面図、同図(c)の右側面図に示すよう
に、樹脂成形部の厚みの薄い方の下樹脂成形部11に樹
脂のはみ出た部分21ができ、これにばり取り工程で使
用するブラストの樹脂メデアが当たって、厚みの薄い方
の樹脂部に割れや欠け、またはクラックが発生するとい
うことがわかった。
When the cause was investigated, the upper resin molding portion 12 and the lower resin molding portion 11 were resin-sealed in a state where they were displaced from each other at the joining surface during the resin molding process, and a plan view of FIG.
As shown in the elevation view of FIG. 3B and the right side view of FIG. 3C, a portion 21 where the resin has protruded is formed in the lower resin molding portion 11 having the smaller thickness of the resin molding portion. It was found that the resin medium of the blast used in the deburring step hits the resin part having a smaller thickness, causing cracks, chips or cracks.

【0006】本発明は、樹脂成形後、その時点の成形条
件により厚みの厚い方の樹脂成形部の上部の接合部に対
して厚みの薄い方の下部の接合面にずれが生じたとして
も、樹脂成形後のばり取り工程などで厚みの薄い方の樹
脂成形下部に、割れや欠け、またはクラックの生じるこ
とのない面実装用樹脂封止半導体装置を提供しようとす
るものである。
According to the present invention, even if the lower joining surface of the thinner part is displaced from the upper joining part of the thicker resin molding part by the molding conditions at that time after the resin molding, An object of the present invention is to provide a surface-mounting resin-sealed semiconductor device in which cracks, chips or cracks do not occur in a lower part of a thinner resin molded part in a deburring step after the resin molding.

【0007】[0007]

【課題を解決するための手段】上記の目的を達成するた
めに本発明は、樹脂封止成形下部(一端部)と同上部
(他端部)とがリード線を挟んでパーティングラインで
一体成形されてなる面実装用樹脂封止半導体装置であっ
て、樹脂成形厚の小なる樹脂成形下部(一端部)におけ
るパーティングライン面上の断面積を、樹脂成形厚の大
なる樹脂成形上部(他端部)におけるパーティングライ
ン面上の断面積より小とし、かつ、樹脂成形下部(一端
部)の断面の領域が樹脂成形上部(他端部)の断面の領
域に含まれる半導体装置としたものである。
According to the present invention, in order to achieve the above object, the lower part (one end) and the upper part (the other end) of the resin-encapsulation molding are integrated with a parting line with a lead wire interposed therebetween. A resin-encapsulated semiconductor device for surface mounting formed by molding, wherein a cross-sectional area on a parting line surface of a resin molding lower part (one end) having a small resin molding thickness is reduced by a resin molding upper part (a large resin molding thickness). The semiconductor device is smaller than the cross-sectional area on the parting line surface at the other end, and the cross-sectional area of the lower part (one end) of the resin molding is included in the cross-sectional area of the upper part (other end) of the resin molding. Things.

【0008】[0008]

【作用】樹脂成形部の、樹脂厚みの薄い一端部のパーテ
ィングラインに沿った断面の大きさが、樹脂厚みの厚い
他端部のパーティングラインに沿った断面の大きさより
も小さく、かつ樹脂厚みの薄い一端部の断面周縁が樹脂
厚みの厚い他端部の断面周縁よりはみ出ていない構造と
したので、樹脂ばり取り工程でブラストの樹脂メデア等
が当たっても割れや欠け、またはクラックが生ずること
がない。
The cross section of the resin molded portion along the parting line at one end where the resin thickness is small is smaller than the cross section along the parting line at the other end where the resin thickness is thick, and Since the cross-sectional periphery of the thinner end does not protrude from the cross-sectional periphery of the thicker other end, cracks, chips, or cracks occur even if the blasted resin media hits in the resin deburring process. Nothing.

【0009】[0009]

【実施例】以下、本発明の面実装用樹脂封止半導体装置
の一実施例について、図1を参照しながら詳しく説明す
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the resin-sealed semiconductor device for surface mounting according to the present invention will be described below in detail with reference to FIG.

【0010】図1において(a)は面実装用樹脂封止半
導体装置の平面図、(b)は同立面図、(c)は同右側
面図である。
In FIG. 1, (a) is a plan view of a resin semiconductor device for surface mounting, (b) is an elevation view, and (c) is a right side view.

【0011】本実施例は、樹脂封止成形上部2と同下部
1とが一体成形されていて、そのパーティングライン3
に沿った面を境として、樹脂成形上部2の樹脂成形厚み
が樹脂成形下部1の樹脂成形厚みよりも薄い構造であ
る。そして、樹脂成形下部1側から一方の面が下部1の
底面上に位置するよう細い短冊状のリード線4が外部へ
導出されている。そして、樹脂成形下部1のパーティン
グライン3を通る方形の断面の大きさが、樹脂成形上部
2のパーティングライン3を通る方形の断面の大きさよ
りも、その一辺の長さにして0.1μmないし50μm
程度小さく、かつ樹脂成形下部1のパーティングライン
3を通る断面周縁が樹脂成形上部2のパーティングライ
ン3を通る断面周縁で囲まれた領域内にある、すなわち
パーティングライン3を通る面上での樹脂成形下部1の
断面積を同じく樹脂成形上部2の断面積より小とし、か
つ、樹脂成形下部1の断面の領域を樹脂成形上部2の断
面の領域に含まれる構造としたものである。
In this embodiment, a resin sealing upper part 2 and a lower part 1 are integrally formed, and a parting line 3 is formed.
The resin molding thickness of the resin molding upper part 2 is smaller than the resin molding thickness of the resin molding lower part 1 with respect to the surface along the boundary. Then, a thin strip-shaped lead wire 4 is led out from the resin molded lower part 1 side such that one surface is located on the bottom surface of the lower part 1. The size of the rectangular cross section passing through the parting line 3 of the resin molding lower part 1 is 0.1 μm in the length of one side of the rectangular cross section passing the parting line 3 of the resin molding upper part 2. Or 50 μm
On the surface passing through the parting line 3, that is, in a region surrounded by the cross-sectional periphery passing through the parting line 3 of the resin molding upper part 2. The cross-sectional area of the resin molding lower part 1 is smaller than the cross-sectional area of the resin molding upper part 2, and the cross-sectional area of the resin molding lower part 1 is included in the cross-sectional area of the resin molding upper part 2.

【0012】このため、この面実装用樹脂封止半導体装
置は、樹脂ばり取り工程のブラストの樹脂メデアが当た
っても割れや欠け、またはクラックを生じることがな
く、この結果、生産歩留りと信頼性をいちじるしく高め
ることができる。
For this reason, the surface-mounted resin-encapsulated semiconductor device does not crack, chip, or crack even if the blasted resin medium in the resin deburring step hits, and as a result, the production yield and the reliability are improved. Can be significantly increased.

【0013】ところで、このような本発明の面実装用樹
脂封止半導体装置は、特に樹脂封止成形時点の成形温度
170℃において±5℃の温度差があっても、次に示す
ような樹脂封止成形条件を満たすことにより実現するこ
とができる。
By the way, even if there is a temperature difference of ± 5 ° C. at a molding temperature of 170 ° C. at the time of the resin encapsulation molding, such a resin-encapsulated semiconductor device of the present invention has the following resin It can be realized by satisfying the sealing molding conditions.

【0014】図2はこの樹脂封止成形方法を説明するた
めの図であり、図の(a)は成形上部成形用金型の要部
平面図、(b)は成形下部成形用金型の要部平面図、
(c)は(a)におけるA−A線に沿った断面図、
(d)は(b)におけるB−B線に沿った断面図であ
る。図2(c)において、寸法xは樹脂成形上部2の厚
さに等しく、また図2(d)において、寸法yは樹脂成
形下部1の厚さに等しく、かつリード線4の厚みと実質
的に等しい。
FIGS. 2A and 2B are diagrams for explaining this resin sealing molding method. FIG. 2A is a plan view of a main part of a molding upper molding die, and FIG. Main part plan view,
(C) is a sectional view taken along line AA in (a),
(D) is a sectional view taken along the line BB in (b). In FIG. 2C, the dimension x is equal to the thickness of the resin molding upper part 2, and in FIG. 2D, the dimension y is equal to the thickness of the resin molding lower part 1 and substantially equal to the thickness of the lead wire 4. be equivalent to.

【0015】樹脂成形金型の設計時に、樹脂成形時にお
ける樹脂封止材の成形温度を設定しその温度の上限、下
限における樹脂成形金型の膨張係数、コム材の膨張係
数、また樹脂封止材の収縮率等を勘案して樹脂封止成形
金型の設計をする。
When designing the resin molding die, the molding temperature of the resin sealing material at the time of resin molding is set, and the expansion coefficient of the resin molding die, the expansion coefficient of the comb material at the upper and lower limits of the temperature, and the resin sealing The resin mold is designed in consideration of the shrinkage of the material.

【0016】この際に樹脂成形の厚みの薄い方のパーテ
ィングライン断面の大きさを、厚みの厚い方のパーティ
ングライン断面の大きさより小さくする。
At this time, the size of the thinner parting line cross section of the resin molding is made smaller than that of the thicker parting line cross section.

【0017】また多数個取りでは樹脂成形金型のピッ
チ、列間の寸法等も膨張係数等を十分勘案して金型設計
製作を行う。
In the case of multi-cavity molding, the design and manufacture of the mold are performed in consideration of the expansion coefficient and the like of the pitch of the resin mold and the dimension between rows.

【0018】この製作された樹脂成形金型を樹脂成形機
にセットし、設計時点の成形温度条件に従って樹脂成形
を行う。
The manufactured resin molding die is set in a resin molding machine, and resin molding is performed according to molding temperature conditions at the time of design.

【0019】この結果、樹脂成形された厚みの薄い樹脂
成形のパーティングライン断面は厚みの厚いパーティン
グライン断面より0.1μmないし50μm程度小さく
なり、かつ樹脂成形下部1のパーティングライン3を通
る断面周縁が樹脂成形上部2のパーティングライン3を
通る断面周縁よりはみ出すことなく形成されて、外部リ
ード線4が樹脂底面と平行に形成された面実装用樹脂封
止半導体装置となる。
As a result, the parting line cross section of the resin molded thin resin molding is smaller than the thick parting line cross section by about 0.1 μm to 50 μm, and passes through the parting line 3 of the resin molded lower part 1. The peripheral edge of the cross section is formed without protruding from the peripheral edge of the cross section passing through the parting line 3 of the resin molding upper part 2, and the external lead wire 4 is formed in parallel with the bottom surface of the resin.

【0020】本実施例では樹脂成形部の厚みの薄い方に
樹脂成形下部を、厚みの厚い方に樹脂成形上部を対応さ
せたが、それとは反対の寸法関係にある樹脂封止半導体
装置の場合にも適応することができる。
In this embodiment, the lower portion of the resin molded portion corresponds to the lower portion of the resin molded portion, and the upper portion of the resin molded portion corresponds to the upper portion of the resin molded portion. Can also be adapted.

【0021】[0021]

【発明の効果】本発明の面実装用樹脂封止半導体装置
は、パーティングラインで二分される断面で上下部のい
ずれか樹脂成形厚みの薄い方の樹脂成形部の断面の大き
さが、大きい方の断面の大きさよりも小さく、かつ小さ
い方の樹脂成形部の断面周縁が大きい方の断面周縁より
はみ出ていない構造としたことにより、樹脂ばり取り工
程のブラストの樹脂メデアが当たっても割れや欠け、ま
たはクラックの生じない面実装用樹脂封止半導体装置で
あり、歩留りや信頼性の向上など多大の利益をもたらす
ものである。
According to the surface-mounted resin-sealed semiconductor device of the present invention, the cross-section of the lower or upper portion of the resin molded portion having the smaller resin molded thickness in the cross section bisected by the parting line has a larger size. Smaller than the size of the cross section, and the cross-sectional edge of the smaller resin molded part does not protrude from the larger cross-sectional edge, so that even if the resin media of the blast in the resin deburring process hits, This is a surface-mounted resin-sealed semiconductor device free from chipping or cracking, and brings great benefits such as improvement in yield and reliability.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)は本発明の一実施例における面実装用樹
脂封止半導体装置の平面図 (b)は同じく立面図 (c)は同じく右側面図
FIG. 1A is a plan view of a resin-encapsulated semiconductor device for surface mounting according to an embodiment of the present invention. FIG. 1B is an elevation view of the same, and FIG.

【図2】図1に示した実施例作製に使用した成形上部成
形用金型の構成図
FIG. 2 is a configuration diagram of a molding die for forming an upper portion used in manufacturing the embodiment shown in FIG. 1;

【図3】(a)は従来の面実装用樹脂封止半導体装置の
一例を示す平面図 (b)は同じく立面図 (c)は同じく右側面図
FIG. 3A is a plan view showing an example of a conventional resin-mounted semiconductor device for surface mounting, FIG. 3B is an elevation view thereof, and FIG. 3C is a right side view thereof.

【図4】図3に示した従来例の樹脂封止成形に使用する
成形上部成形用金型の構成図
4 is a configuration diagram of a molding upper molding die used for resin sealing molding of the conventional example shown in FIG.

【図5】(a)は図3に示した従来例のにおいて樹脂成
形部の厚みの小さい方の樹脂部はみ出しを示す平面図 (b)は同じく立面図 (c)は同じく右側面図
5 (a) is a plan view showing the protrusion of the resin portion with the smaller thickness of the resin molded portion in the conventional example shown in FIG. 3; (b) is an elevational view; and (c) is a right side view.

【符号の説明】[Explanation of symbols]

1 上樹脂成形部 2 下樹脂成形部 3 パーティングライン 4 リード線 DESCRIPTION OF SYMBOLS 1 Upper resin molding part 2 Lower resin molding part 3 Parting line 4 Lead wire

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 23/28 H01L 21/56 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 23/28 H01L 21/56

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 樹脂封止成形部の一端部と他端部とがパ
ーティングラインで一体成形されてなり、樹脂成形厚の
小なる一端部側の、パーティングラインを通る面上の断
面積を、樹脂成形厚の大なる他端部側のパーティングラ
インを通る面上の断面積より小とし、前記一端部の断面
の領域が前記他端部の断面の領域に含まれることを特徴
とする面実装用樹脂封止半導体装置。
1. One end and the other end of a resin-sealed molded portion are integrally formed by a parting line, and a cross-sectional area on a surface passing through the parting line on one end side where the resin molding thickness is small. Is smaller than the cross-sectional area on a plane passing through the parting line on the other end side where the resin molding thickness is large, wherein the cross-sectional area of the one end is included in the cross-sectional area of the other end. Surface mounted resin-sealed semiconductor device.
JP7102076A 1995-04-26 1995-04-26 Resin encapsulated semiconductor device for surface mounting Expired - Fee Related JP2997182B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7102076A JP2997182B2 (en) 1995-04-26 1995-04-26 Resin encapsulated semiconductor device for surface mounting

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7102076A JP2997182B2 (en) 1995-04-26 1995-04-26 Resin encapsulated semiconductor device for surface mounting

Publications (2)

Publication Number Publication Date
JPH08298268A JPH08298268A (en) 1996-11-12
JP2997182B2 true JP2997182B2 (en) 2000-01-11

Family

ID=14317688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7102076A Expired - Fee Related JP2997182B2 (en) 1995-04-26 1995-04-26 Resin encapsulated semiconductor device for surface mounting

Country Status (1)

Country Link
JP (1) JP2997182B2 (en)

Also Published As

Publication number Publication date
JPH08298268A (en) 1996-11-12

Similar Documents

Publication Publication Date Title
US5328870A (en) Method for forming plastic molded package with heat sink for integrated circuit devices
JP2997182B2 (en) Resin encapsulated semiconductor device for surface mounting
JPH04249348A (en) Resin sealed semiconductor device and manufacture thereof
JP3179003B2 (en) Apparatus and method for forming ultra-thin semiconductor package such as TSOP or UTSOP
JPS60180126A (en) Manufacture of semiconductor device
JPH06196609A (en) Lead frame and semiconductor device using same
JPS5986251A (en) Leadframe for resin-sealed semiconductor device
JPH0653266A (en) Semiconductor device
JPH05218508A (en) Manufacture of optical semiconductor device
JPS6043849A (en) Lead frame
KR200177346Y1 (en) Semiconductor package
JPH04293243A (en) Metal mold equipment for resin seal and cutting method of gate
JPS5854659A (en) Resin-sealed semiconductor device
JPS63307766A (en) Semiconductor device
JPS6217383B2 (en)
JPS63237422A (en) Manufacture of resin mold semiconductor
JPH03175658A (en) Resin sealed semiconductor device and manufacture thereof
JPS60111432A (en) Metal mold for resin sealing of semiconductor device
JPH07130940A (en) Structure of lead frame for quad type semiconductor device
KR0134812Y1 (en) Gate structure for void prevention of semiconductor mold gold type
JPH0322464A (en) Resin-sealed semiconductor device
JPS6065555A (en) Manufacture of resin-seal semiconductor device
JPH029156A (en) Manufacture of semiconductor device
JPS6020546A (en) Semiconductor device
JPS61145835A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081029

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091029

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091029

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101029

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111029

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121029

Year of fee payment: 13

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131029

Year of fee payment: 14

LAPS Cancellation because of no payment of annual fees