JPS59114740A - 荷電ビ−ム光学鏡筒のレンズ設定方法 - Google Patents

荷電ビ−ム光学鏡筒のレンズ設定方法

Info

Publication number
JPS59114740A
JPS59114740A JP57224159A JP22415982A JPS59114740A JP S59114740 A JPS59114740 A JP S59114740A JP 57224159 A JP57224159 A JP 57224159A JP 22415982 A JP22415982 A JP 22415982A JP S59114740 A JPS59114740 A JP S59114740A
Authority
JP
Japan
Prior art keywords
lens
charged beam
charged
intensity distribution
aperture mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57224159A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136663B2 (enExample
Inventor
Toshinari Muraguchi
要也 村口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57224159A priority Critical patent/JPS59114740A/ja
Publication of JPS59114740A publication Critical patent/JPS59114740A/ja
Publication of JPH0136663B2 publication Critical patent/JPH0136663B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
JP57224159A 1982-12-21 1982-12-21 荷電ビ−ム光学鏡筒のレンズ設定方法 Granted JPS59114740A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57224159A JPS59114740A (ja) 1982-12-21 1982-12-21 荷電ビ−ム光学鏡筒のレンズ設定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57224159A JPS59114740A (ja) 1982-12-21 1982-12-21 荷電ビ−ム光学鏡筒のレンズ設定方法

Publications (2)

Publication Number Publication Date
JPS59114740A true JPS59114740A (ja) 1984-07-02
JPH0136663B2 JPH0136663B2 (enExample) 1989-08-01

Family

ID=16809450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57224159A Granted JPS59114740A (ja) 1982-12-21 1982-12-21 荷電ビ−ム光学鏡筒のレンズ設定方法

Country Status (1)

Country Link
JP (1) JPS59114740A (enExample)

Also Published As

Publication number Publication date
JPH0136663B2 (enExample) 1989-08-01

Similar Documents

Publication Publication Date Title
US6310341B1 (en) Projecting type charged particle microscope and projecting type substrate inspection system
EP1150327B1 (en) Multi beam charged particle device
US4209702A (en) Multiple electron lens
US5008537A (en) Composite apparatus with secondary ion mass spectrometry instrument and scanning electron microscope
JP2004301863A (ja) 電気的に絶縁された標本表面の分析装置
JP2006032107A (ja) 反射結像型電子顕微鏡及びそれを用いたパターン欠陥検査装置
US8067733B2 (en) Scanning electron microscope having a monochromator
JP2017010608A (ja) 荷電粒子線の傾斜補正方法および荷電粒子線装置
US5591971A (en) Shielding device for improving measurement accuracy and speed in scanning electron microscopy
US4633085A (en) Transmission-type electron microscope
US7227141B2 (en) Electron beam apparatus
US5747814A (en) Method for centering a lens in a charged-particle system
JP2004513477A (ja) 静電対物に調整可能な最終電極を設けたｓｅｍ
US4084095A (en) Electron beam column generator for the fabrication of semiconductor devices
JPH11213934A (ja) 集束イオンビームによる二次イオン像観察方法
JPS6180744A (ja) イオンマイクロビ−ム装置
EP0035556B1 (en) Electron beam system
JPH0235419B2 (enExample)
JP4590590B2 (ja) 位置感度の高い検出器による透過オペレーションに対するｓｅｍ
JPS59114740A (ja) 荷電ビ−ム光学鏡筒のレンズ設定方法
JP4178003B2 (ja) 半導体回路パターンの検査装置
JPS6231931A (ja) 電子ビ−ム照射装置および該装置による試験、測定方法
JP2000304712A (ja) 電子線分析・観察装置および電子線マイクロアナライザ
JPH11135052A (ja) 走査電子顕微鏡
JPH10269982A (ja) 検査装置のレンズ電圧設定方法及び検査装置