JPS59111379A - Manufacture of light emitting semiconductor device - Google Patents
Manufacture of light emitting semiconductor deviceInfo
- Publication number
- JPS59111379A JPS59111379A JP57221326A JP22132682A JPS59111379A JP S59111379 A JPS59111379 A JP S59111379A JP 57221326 A JP57221326 A JP 57221326A JP 22132682 A JP22132682 A JP 22132682A JP S59111379 A JPS59111379 A JP S59111379A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- solution
- epitaxial
- semiconductor device
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000010453 quartz Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- 239000011261 inert gas Substances 0.000 claims abstract description 6
- 239000007791 liquid phase Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 abstract description 28
- 238000010438 heat treatment Methods 0.000 abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 239000006185 dispersion Substances 0.000 abstract 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 42
- 229910005540 GaP Inorganic materials 0.000 description 41
- 239000011701 zinc Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010828 elution Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は発光半導体装置の製造方法に関し、特にＩＩＩ
−Ｖ族化合物半導体からなる緑色発光ダイオードの製造
に使用される液相エピタキシャル成長法の改良に係る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a light emitting semiconductor device, and particularly to a method for manufacturing a light emitting semiconductor device.
- This invention relates to an improvement in a liquid phase epitaxial growth method used for manufacturing green light emitting diodes made of group V compound semiconductors.
リン化ガリウム（ＧａＰ）による緑色発光ダイオードは
第１図に示す構造を有している。同図において、１はド
ナー不純物として硫黄（Ｓ）およびテルルｒＴｅ）を含
むｎ型ＧａＰ基板である。該ｎ型ＧａＰ基板１の上には
ドナー不純物としてシリコン（Ｓｉ）およびＳを含む第
１のｎ型ＧａＰ層２、ドナー不純物としてＳｉを含む第
２のｎ型ＧａＰ層３、アクセプタ不純物として亜鉛（Ｚ
ｎ）を含むｐ型ＧａＰ層４がハ［ロ次エピタキシャル成
長されている。このうち第２のｎ型ＧａＰ層３およびｐ
型ＧａＰ層４には発光中心となる蟹素（Ｎ）が含まれて
おり、そのｐｎ接合領域が発光領域を形成している。他
方、第１のｎ型ＧａＰ層２は発光領域となる第２のｎ型
ＧａＰ層３に良好な結晶性を得るために形成されるもの
で、発光には関与しない。A green light emitting diode made of gallium phosphide (GaP) has the structure shown in FIG. In the figure, 1 is an n-type GaP substrate containing sulfur (S) and tellurium (rTe) as donor impurities. On the n-type GaP substrate 1, a first n-type GaP layer 2 containing silicon (Si) and S as donor impurities, a second n-type GaP layer 3 containing Si as donor impurities, and zinc ( Z
A p-type GaP layer 4 containing n) is epitaxially grown. Of these, the second n-type GaP layer 3 and p
The type GaP layer 4 contains nitric oxide (N) which serves as a light emitting center, and its pn junction region forms a light emitting region. On the other hand, the first n-type GaP layer 2 is formed in order to obtain good crystallinity in the second n-type GaP layer 3 serving as a light emitting region, and is not involved in light emission.
なお、ＧａＰ基板１および夫々のＧａＰ層２，３゜４は
第１図（Ｂ）に示す不純物濃変プロファイルを有してい
る。Incidentally, the GaP substrate 1 and the respective GaP layers 2, 3.4 have an impurity concentration change profile shown in FIG. 1(B).
上記構造を有する緑色発光ダイオードは従来次のような
液相エピタキシャル成長法によって製造されていた。A green light emitting diode having the above structure has conventionally been manufactured by the following liquid phase epitaxial growth method.
■ まず、液相エピタキシャル装置における石英製専用
ポートの液溜に、ＧａＰが飽和状態で溶解されている金
属Ｇａ溶液を仕込み、略１００ｏ℃の温度Ｔ！に昇温す
る。続いて、ｎ型ＧａＰ基板１を前記専用ｙｌｒ−トの
基板ホルダーにセットし、前記金属Ｇａ溶液に接触させ
る。その後、Ｇａ溶液の温度を所定の降下速度で９７０
℃（Ｔ２ ）まで除冷することによ＃）第１のｎ Ｗ
ＧａＰ層２を成長させる。■ First, a metallic Ga solution in which GaP is dissolved in a saturated state is charged into the liquid reservoir of a dedicated quartz port in a liquid phase epitaxial device, and the temperature T is approximately 100°C! The temperature rises to Subsequently, the n-type GaP substrate 1 is set in the substrate holder of the dedicated ylrt and brought into contact with the metal Ga solution. After that, the temperature of the Ga solution was decreased to 970°C at a predetermined rate of decrease.
℃ (T2) by gradually cooling the first nW
GaP layer 2 is grown.
このとき、第１のｎ型ＧａＰ層２に含まれるドナー不純
物ｓｉは、石英製の専用ボートからＧａ溶液中に導入さ
れたＳｔが混入されたものである。At this time, the donor impurity si contained in the first n-type GaP layer 2 is a mixture of St introduced into the Ga solution from a special boat made of quartz.
また、ドナー不純物Ｓはｎ型ＧａＰ基板１に含まれてい
たＳがメルトバックして導入されたものである。Further, the donor impurity S is introduced by melting back S contained in the n-type GaP substrate 1.
（１１） 次に、Ｇａ溶液を温度Ｔ２にしばらく保持
した後、液相エピタキシャル装置内の雰囲気にアンモニ
アを微量導入してＧａ溶液中にＮｌ添加する。続いて、
Ｇａ溶液の温度を所定の降下速度で９３０℃（Ｔ３ ）
まで徐冷することによシ、Ｎを含む第２のｎ型ＧａＰ層
３が成長される。このとき第２のｎ型ＧａＰ層３にドナ
ー不純物として混入されるＳｔも、石英製の専用テート
からＧａ溶液中に導入されたものである。(11) Next, after holding the Ga solution at temperature T2 for a while, a small amount of ammonia is introduced into the atmosphere inside the liquid phase epitaxial device and Nl is added to the Ga solution. continue,
The temperature of the Ga solution was decreased to 930°C (T3) at a predetermined rate of decrease.
By slowly cooling the layer to a temperature of 10.degree. C., a second n-type GaP layer 3 containing N is grown. At this time, St mixed into the second n-type GaP layer 3 as a donor impurity was also introduced into the Ga solution from a dedicated quartz tate.
（１１）次に、温度Ｔ３に暫く保持して雰囲気中に亜鉛
蒸気を導入し、Ｇａ溶液中にＺｎを象加する。(11) Next, the temperature is maintained at T3 for a while, and zinc vapor is introduced into the atmosphere to add Zn to the Ga solution.
続いて、結晶成長が完了する８００℃（Ｔ４）まで所定
の降下速度でＧａ溶液を徐冷することによシ、Ｚｎおよ
びＮを含むｐ型ＧａＰ層４を成長させて第１図（Ａ）の
緑色発光素子の構造が得られる。Subsequently, the Ga solution was slowly cooled at a predetermined rate of descent to 800° C. (T4), at which crystal growth was completed, to grow a p-type GaP layer 4 containing Zn and N, as shown in FIG. 1(A). A structure of a green light emitting device is obtained.
その後は専用？−ト中に残留しているＧａ溶液中にＧａ
Ｐを補充した上で、これを再使用して上記の製造工程が
繰シ返される。その際、残留したＧａ溶液中にはＧａＰ
＋ Ｎ ＋ Ｓｉの他にＺｎが含まれており、このＧ
ａ溶液を再使用して第１のｎ型ＧａＰ層２をエピタキシ
ャル成長させるためには少なくともアクセプタ不純物で
あるＺｎを除去しなければならない。そこでＧａ溶液を
再使用する前に水素雰囲気中において１０００℃で３〜
４時間熱処理し、Ｚｎｆ追い出す方法が従来採用されて
いる。なお、この熱処理を水素雰囲気中で行なうのはＧ
ａ溶液の酸化を防ぐためである。Is it exclusive after that? -Ga in the Ga solution remaining in the
After replenishing P, it is reused and the above manufacturing process is repeated. At that time, the remaining Ga solution contains GaP
+ N + Zn is included in addition to Si, and this G
In order to epitaxially grow the first n-type GaP layer 2 by reusing the a solution, at least Zn, which is an acceptor impurity, must be removed. Therefore, before reusing the Ga solution, it was heated at 1000℃ in a hydrogen atmosphere for 3~
Conventionally, a method has been adopted in which Znf is expelled by heat treatment for 4 hours. Note that this heat treatment is performed in a hydrogen atmosphere.
This is to prevent oxidation of the a solution.
ところで、第１図の構造を鳴する緑色発光ダイオードで
は、高い発光効率を得るために第２のｎ型ＧａＰ層３の
ドナー不純物濃度表ｐ型ＧａＰ層４のアクセプタ不純物
濃度の差を大きくすることが必要とされる。第１図（Ｂ
）に示したように第２のｎ型ＧａＰ層３の不純物濃度を
低くし、ｐ型ＧａＰ層４の不純物濃度を高くしているの
はこの理由によるものである。従って、第１図（Ａ）
（Ｂ）の緑色発光効率を更に向上するためには、第２の
ｎ型ＧａＰ層３に導入されるドナー不純物ＳｔＯ量を極
力少なくすることが要求される。第２因は第２の１１型
ＧａＰ層３におけるＳｔ濃度だけを変化させた場合の発
光効率の変化を示している。By the way, in the green light emitting diode having the structure shown in FIG. 1, in order to obtain high luminous efficiency, the difference between the donor impurity concentration of the second n-type GaP layer 3 and the acceptor impurity concentration of the p-type GaP layer 4 must be increased. is required. Figure 1 (B
), this is the reason why the impurity concentration of the second n-type GaP layer 3 is made low and the impurity concentration of the p-type GaP layer 4 is made high. Therefore, Fig. 1(A)
In order to further improve the green light emission efficiency of (B), it is required to minimize the amount of donor impurity StO introduced into the second n-type GaP layer 3. The second factor shows the change in luminous efficiency when only the St concentration in the second 11-type GaP layer 3 is changed.
ところが、従来の製造方法ではＧａのエピタキシャル溶
液を再使用するために水素雰囲気中で熱処理を行なって
いるため、水素と専用−一一ト中のＳ ｒ ０２とが下
記（１）式のように反応してＳｉが遊離し、Ｇａ溶液中
へのＳｔの溶出が加速される。However, in the conventional manufacturing method, heat treatment is performed in a hydrogen atmosphere in order to reuse the Ga epitaxial solution, so that hydrogen and S r 02 in the exclusive solution are mixed as shown in equation (1) below. The reaction liberates Si, and the elution of St into the Ga solution is accelerated.
５ｔＯｚ ＋ ２）１２→Ｓｉ＋ ２Ｈ２０・・・・（
ｌ’）この結果、従来の製造方法ではエピタキシャル溶
液中のＳＬ濃度が高くなるから必然的に第２のｎ型Ｇａ
ｐ層のドナー温間も高くなり、従って発光効率の向上を
図ることが極めて困虹であるという問題があった。なお
、（１）式の反応によるＳｔの遊離は、熱処理の温度お
よび時間によシ犬きく影響されるから、熱処理の条件を
低温かつ短時間としてＳｔの遊離を抑制することは可能
である。5tOz + 2) 12→Si+ 2H20...(
l') As a result, in the conventional manufacturing method, the SL concentration in the epitaxial solution increases, so the second n-type Ga
There is a problem in that the donor warmth of the p layer also increases, making it extremely difficult to improve the luminous efficiency. Note that since the release of St due to the reaction of formula (1) is greatly influenced by the temperature and time of heat treatment, it is possible to suppress the release of St by setting the heat treatment conditions to a low temperature and a short time.
ア２
しかし、そうするとＧａ溶液中に残留すｔヶブタ不純物
Ｚｎが完全に除去されなくなシ、エピタキシャル成長に
よって形成された第２のｎ型ＧａＰ層３の一部にｐ型の
反転層が形成されるといった別の問題を生じることにな
る。A2 However, in this case, the impurity Zn remaining in the Ga solution will not be completely removed, and a p-type inversion layer will be formed in a part of the second n-type GaP layer 3 formed by epitaxial growth. Another problem will arise.
筐だ、（１）式の反応は熱処理の祭件に大きく左右され
るのみならず、制御するのが極めて困難である。このた
め、従来の製造方法では第２のｎ型ＧａＰ層３のドナー
不純物濃度が大きくばらつき、従って得られた発光ダイ
オードの発光効率に大きなばらつきを生じるという問題
があった。However, the reaction of equation (1) not only depends greatly on the heat treatment conditions, but is also extremely difficult to control. Therefore, in the conventional manufacturing method, there was a problem in that the donor impurity concentration of the second n-type GaP layer 3 varied widely, resulting in large variations in the luminous efficiency of the obtained light emitting diode.
第３図は従来の製造方法における熱処理の温度および時
間を変更し、第２のｎ型ＧａＰ層３におけるドナー不純
物濃度の変化を調べた結果を示しておシ、この結果は上
記の問題点を明瞭に示している。例えば、ｐ型反転層を
生じることなくドナー不純物濃度が最も低く安定してい
るのは熱処理条件を１０００℃で３時間とした場合であ
るが、このときでもドナー不純物濃度には５．４〜１．
０Ｘ１０１６と広い範囲でばらつきが生じている。この
ばらつきを第２図の相関に移し替えて見れば１発光効率
は０．１５〜０．４％と大きくばらつくことになる。Figure 3 shows the results of examining changes in the donor impurity concentration in the second n-type GaP layer 3 by changing the temperature and time of heat treatment in the conventional manufacturing method. clearly shown. For example, the donor impurity concentration is lowest and stable without forming a p-type inversion layer when the heat treatment condition is 1000°C for 3 hours, but even in this case, the donor impurity concentration is 5.4 to 1. ．．
Variations occur over a wide range of 0x1016. If this variation is transferred to the correlation shown in FIG. 2, the luminous efficiency will vary greatly from 0.15 to 0.4%.
本発明は上記事情に鑑みてなされたもので、ａｔ−Ｖ族
化合物半導体による発光半導体装ｅを製造する際、エピ
タキシャル溶液を再使用するための熱処理によシ石英製
の液相エピタキシャル装置からドナー不純物となるＳｉ
が遊離されてエピタキシャル溶液中に溶出されるのを制
御し、もって発光領域におけるｎ型層のドナー濃度を低
く安定化し、発光効率の向上およびばらつき減少を図る
ことができる発光半導体装置の製造方法を提供するもの
である。The present invention has been made in view of the above circumstances, and when manufacturing a light emitting semiconductor device e using an at-V group compound semiconductor, a donor is transferred from a liquid phase epitaxial device made of quartz by heat treatment for reusing the epitaxial solution. Si as an impurity
A method for manufacturing a light-emitting semiconductor device is provided, in which the donor concentration of an n-type layer in a light-emitting region is kept low and stable by controlling the release and elution into an epitaxial solution, thereby improving luminous efficiency and reducing variations. This is what we provide.
本発明による発光半導体装置の製造方法は、従来の製造
方法におけるエピタキシャル溶液再使用のための熱処理
をｆ活性ガス雰囲気下で行なうことを特徴とするもので
ある。The method for manufacturing a light emitting semiconductor device according to the present invention is characterized in that the heat treatment for reusing the epitaxial solution in the conventional manufacturing method is performed in an atmosphere of active gas.
本発明における不活性ガスとしては、Ｈｅ 。The inert gas in the present invention is He.
Ａｒ 、 Ｘｅ等の希ガス類の他、窒素ガスを用いるこ
とができる。In addition to rare gases such as Ar and Xe, nitrogen gas can be used.
本発明によれば、エピタキシャル溶液を再使用するため
に熱処理を行なう際、不活性ガスによってエピタキシャ
ル溶液の酸化が防止され、しかもこの不活性ガスは液相
エピタキシャル装置を構成する石英と反応しないからＳ
ｉの遊離は生じない。従って、エピタキシャル溶液中へ
のＳｔの制御不能な溶出を防止することができ、発光領
域のｎ型層におけるドナー不純物濃度を低くかつ安定に
抑制して発光効率が高くばらつきの小さい発光半導体装
置を得ることができる。According to the present invention, when performing heat treatment to reuse the epitaxial solution, oxidation of the epitaxial solution is prevented by the inert gas, and moreover, this inert gas does not react with the quartz constituting the liquid phase epitaxial device.
No release of i occurs. Therefore, uncontrollable elution of St into the epitaxial solution can be prevented, and the donor impurity concentration in the n-type layer of the light emitting region can be suppressed low and stably to obtain a light emitting semiconductor device with high light emitting efficiency and small variation. be able to.
以下、本発明を第１図（Ａｌ （Ｂ）のＧａＰ緑色発光
ダイオードの製造に適用した実施例について説明する。Hereinafter, an embodiment in which the present invention is applied to the production of a GaP green light emitting diode shown in FIG. 1 (Al(B)) will be described.
Ｇａ溶液を再使用するための熱処理をアルゴンガス雰囲
気中で行なった以外は既述した従来の製造方法と同様に
行なって第１図（Ａ） （Ｂ）のＧａＰ緑色発光ダイオ
ードを製造し、得られた発光ダイオードの第２のｎ型Ｇ
ａＰ層３におけるドナー不純物濃度および発光効率を調
べた。The GaP green light emitting diode shown in FIGS. 1A and 1B was manufactured in the same manner as the conventional manufacturing method described above, except that the heat treatment for reusing the Ga solution was performed in an argon gas atmosphere. The second n-type G of the light emitting diode
The donor impurity concentration and luminous efficiency in the aP layer 3 were investigated.
第４図は、上記の実施例における熱処理を１０００℃で
時間を変化させて行ない、得られた夫々の発光ダイオー
ドにおける第２のｎ型ＧａＰ層３中のドナー不純物濃度
を従来の製造方法による結果と比較して示す線図である
。この結果から、上記実施例の方法では石英からＳｉが
遊離するのを防止でき、これによって第２のｎ型ＧａＰ
Ｉ得２のドナー不純物濃度を従来よりも低下させると
共にそのばらつきを抑制できることが明らかである。ま
た、第４図の結果を第２図での発光効率に移し替えてみ
れは、従来の平均発光率０．２５ｔＩｊよシも２０ｑｂ
高い０．３ｑ６ノ発光効率を達成できることが判る。FIG. 4 shows the donor impurity concentration in the second n-type GaP layer 3 of each light-emitting diode obtained by performing the heat treatment in the above example at 1000° C. for different times, and comparing the result with the conventional manufacturing method. FIG. From this result, the method of the above example can prevent Si from being liberated from quartz, and thereby the second n-type GaP
It is clear that the donor impurity concentration of I and II can be lowered than before and its variations can be suppressed. In addition, if we transfer the results in Figure 4 to the luminous efficiency in Figure 2, we can see that the average luminous efficiency is 20 qb compared to the conventional average luminous efficiency of 0.25 tIj.
It can be seen that a high luminous efficiency of 0.3q6 can be achieved.
更に、熱処理条件を１０００℃Ｘ３時間とした実施例で
製造された１０ロツトのＧａＰ緑色発光ダイオードにつ
いて、その発光効率を測定した。Furthermore, the luminous efficiency was measured for 10 lots of GaP green light emitting diodes manufactured under the heat treatment conditions of 1000° C. for 3 hours.
その結果全従来のνＭ造方法で得られた製品の発光効率
と比較して下記ＭＬ１ ｅに示す。The results are shown in ML1e below, in comparison with the luminous efficiency of all products obtained using the conventional νM manufacturing method.
なお、実施例品および従来品々も発光効率は２０Ａ／ｃ
ｍ で測定した。In addition, the luminous efficiency of the example product and the conventional product is 20A/c.
Measured in m.
第 １ 衣
〔発明の効果〕
以上詳述したように、本発明によれば■−■族化合物半
導体による発光半導体装置を製造する際、エピタキシャ
ル溶液を再使用するための熱処理により石英製の液相エ
ピタキシャル装置がらドナー不純物となるＳｔが遊離さ
れてエピタキシャル溶液中に溶出されるのを抑制し、も
って発光領域におけるｎ型層のドナー濃度を低く安定化
し、発光効率の向上およびばらつき減少を図ることがで
きる発光半導体装置の製造方法を提供できるものである
。First Effect [Effects of the Invention] As detailed above, according to the present invention, when manufacturing a light emitting semiconductor device using a ■-■ group compound semiconductor, a liquid phase made of quartz is formed by heat treatment for reusing the epitaxial solution. It is possible to suppress St, which becomes a donor impurity, from being liberated from the epitaxial device and to be eluted into the epitaxial solution, thereby stabilizing the donor concentration of the n-type layer in the light emitting region at a low level, thereby improving luminous efficiency and reducing variations. Accordingly, it is possible to provide a method for manufacturing a light emitting semiconductor device.
第１図（Ａ）はＧａＰ緑色発光ダイオードの断面図であ
シ、第１図（Ｂ）はその不純物濃度プロファイルを示す
線図、第２図は第１図（Ａ）、（Ｂ）のＧａＰ緑色発光
ダイオードにおいて、第２のｎ型ＧａＰ層３のドナー不
純物濃度と発光効率との関係を示す線図、第３図は第１
図（Ａ）、（Ｂ）のＧａＰ緑色発光ダイオードの従来の
製造方法における問題点を示す線図、第４図は本発明の
実施例における効果を従来の製造方法と比較して示す線
図である。
１− ｎ ＷＧａＰ基板、２・・・第１のｎ型層、ａＰ
層、３・・・第２のｎ型ＧａＰ層、４・・・ｐ型ＧａＰ
層。
出願人代理人 弁理士 鈴 江 武 彦第１図
へ☆方嶋託鳥１
第２図
３８４
第４図Figure 1 (A) is a cross-sectional view of a GaP green light emitting diode, Figure 1 (B) is a diagram showing its impurity concentration profile, and Figure 2 is a GaP green light emitting diode shown in Figures 1 (A) and (B). A diagram showing the relationship between the donor impurity concentration of the second n-type GaP layer 3 and the luminous efficiency in a green light emitting diode, FIG.
Figures (A) and (B) are diagrams showing problems in the conventional manufacturing method for GaP green light emitting diodes, and Figure 4 is a diagram showing the effects of the embodiment of the present invention in comparison with the conventional manufacturing method. be. 1- n WGaP substrate, 2... first n-type layer, aP
layer, 3... second n-type GaP layer, 4... p-type GaP
layer. Applicant's agent Patent attorney Takehiko Suzue Go to Figure 1 ☆Takucho Hoshima 1 Figure 2 384 Figure 4
Claims (1)
相エピタキシャル法によ、６、ｍ−ｖ族化合物半導体基
板ｔ＝に上にまずｎ型、続いてｐ型のＩＩＩ−Ｖ族化合
物半導体層を積層成長させる発光半導体装置の製造方法
において、エピタキシャル成長溶液を再使用するに際し
て該エピタキシャル成長溶液を不活性ガス雰囲気下で熱
処理することを特徴とする発光半導体装置の製造方法０By a liquid phase epitaxial method using a liquid phase epitaxial apparatus having a quartz member, first an n-type and then a p-type III-V group compound semiconductor layer are formed on the m-v group compound semiconductor substrate t=6. A method for manufacturing a light-emitting semiconductor device by layered growth, characterized in that the epitaxial growth solution is heat-treated in an inert gas atmosphere when the epitaxial growth solution is reused.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57221326A JPS59111379A (en) | 1982-12-17 | 1982-12-17 | Manufacture of light emitting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57221326A JPS59111379A (en) | 1982-12-17 | 1982-12-17 | Manufacture of light emitting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59111379A true JPS59111379A (en) | 1984-06-27 |
Family
ID=16765044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57221326A Pending JPS59111379A (en) | 1982-12-17 | 1982-12-17 | Manufacture of light emitting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59111379A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07297659A (en) * | 1994-04-22 | 1995-11-10 | Nec Corp | Power amplifier circuit |
-
1982
- 1982-12-17 JP JP57221326A patent/JPS59111379A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07297659A (en) * | 1994-04-22 | 1995-11-10 | Nec Corp | Power amplifier circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0770755B2 (en) | High brightness LED epitaxial substrate and method of manufacturing the same | |
| US3960618A (en) | Epitaxial growth process for compound semiconductor crystals in liquid phase | |
| JP2001192300A (en) | Nitride-based compound semiconductor substrate and method of producing the same | |
| JP3356041B2 (en) | Gallium phosphide green light emitting device | |
| JPH08335715A (en) | Epitaxial wafer and its manufacture | |
| JPS59111379A (en) | Manufacture of light emitting semiconductor device | |
| JP3324102B2 (en) | Manufacturing method of epitaxial wafer | |
| US4298410A (en) | Method for growing a liquid phase epitaxial layer on a semiconductor substrate | |
| JP3104218B2 (en) | Method for growing nitrogen-doped GaP epitaxial layer | |
| JPS5816535A (en) | Semiconductor device and its manufacture | |
| JP3097587B2 (en) | Epitaxial wafer for light emitting semiconductor device | |
| JP3633806B2 (en) | Epitaxial wafer and light-emitting diode manufactured using the same | |
| JPH0463040B2 (en) | ||
| JP3992117B2 (en) | GaP light emitting device substrate | |
| JPH05335621A (en) | Gallium phosphide green light emitting diode | |
| JPH1197740A (en) | Epitaxial wafer for gap light emitting diode and gap light emitting diode | |
| JPH0712093B2 (en) | Light emitting semiconductor device substrate and manufacturing method thereof | |
| JPS5929416A (en) | Manufacture of semiconductor device | |
| JPS6116759B2 (en) | ||
| JPH10270751A (en) | Epitaxial wafer for light-emitting semiconductor device | |
| JPS6285480A (en) | Manufacture of gallium phosphide green light emitting element | |
| JP2853292B2 (en) | Method and apparatus for liquid phase epitaxial growth of semiconductor crystal | |
| JPS6021894A (en) | Process for liquid phase epitaxial growth | |
| JPS5818981A (en) | Manufacture of semiconductor device | |
| JPS5846876B2 (en) | Method for manufacturing gallium phosphide light emitting device |