JPS59111335A - Removing method of resin unnecessary for semiconductor device - Google Patents
Removing method of resin unnecessary for semiconductor deviceInfo
- Publication number
- JPS59111335A JPS59111335A JP22132082A JP22132082A JPS59111335A JP S59111335 A JPS59111335 A JP S59111335A JP 22132082 A JP22132082 A JP 22132082A JP 22132082 A JP22132082 A JP 22132082A JP S59111335 A JPS59111335 A JP S59111335A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- resin
- hydrochloric acid
- unnecessary resin
- aqueous solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000011347 resin Substances 0.000 title claims abstract description 26
- 229920005989 resin Polymers 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 14
- 238000010137 moulding (plastic) Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 239000007864 aqueous solution Substances 0.000 abstract description 5
- 238000001035 drying Methods 0.000 abstract description 3
- 239000007769 metal material Substances 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 2
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 description 5
- 239000000428 dust Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 241000270295 Serpentes Species 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000003380 propellant Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は半導体装置の成形樹脂の不要樹脂を除去する
場合に効率よく除去できるようにした半導体装置の不要
樹脂除去方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for removing unnecessary resin from a semiconductor device, which enables efficient removal of unnecessary resin from molding resin of a semiconductor device.
プラスチック成形による半導体装置組み立て工程におい
て、不要樹脂の発生は次のように発生していた。第１図
（Ａ）はプラスチック成形後の半導体装１６の平面図、
第１図（Ｂ）は第１図（４）のＡ−Ａ′線に沿う断面図
である。つまり、第１図（Ａｌにおいて、１１は放熱板
、１２は成形樹脂、１３は上記放熱板１）上に付着した
不要樹脂、１４は、タイバー、１５は外部リード、１６
は半導体素子である。また、第１図（Ｂ）において１７
は半導体素子保護用レジン、１８はボンディングワイヤ
である。In the semiconductor device assembly process using plastic molding, unnecessary resin is generated as follows. FIG. 1(A) is a plan view of the semiconductor device 16 after plastic molding;
FIG. 1(B) is a sectional view taken along line AA' in FIG. 1(4). In other words, in FIG. 1 (for Al, 11 is a heat sink, 12 is a molded resin, 13 is an unnecessary resin attached to the above heat sink 1), 14 is a tie bar, 15 is an external lead, 16
is a semiconductor element. Also, in Figure 1 (B), 17
18 is a resin for protecting a semiconductor element, and 18 is a bonding wire.
上記したように、グラスチック成形による半導体装置組
み立て製造工程において、プラスチック成形後に放熱板
１ノ上に付着した不要樹脂１３を除去する場合、下記に
述べる３つの方法が一般によく知られている。As described above, in the process of assembling and manufacturing semiconductor devices by plastic molding, the following three methods are generally well known when removing unnecessary resin 13 adhering to the heat sink 1 after plastic molding.
１、 ８ＬＡＳＴ方法
２゜砥石による研摩方法
３、 サンドペーパ一方法
〔背景技術の問題点〕
上記した第１の方法であるＢＬＡＳＴ方法は（１）投射
圧を上げる事により ＩＪ−ドフレームの伸びが発生し
、半導体素子に４％ ９Ｊｒ ｋ与える。（２）騒音が
赦しい。（３）粉塵が発生する。という欠点が生じてい
た。1. 8LAST method 2. Polishing method using a grindstone 3. Sandpaper method [Problems with background technology] The BLAST method, which is the first method described above, (1) causes elongation of the IJ-de frame by increasing the projection pressure. and gives 4% 9Jrk to the semiconductor element. (2) Noise is acceptable. (3) Dust is generated. There was a drawback.
また、上記した第２の方法である砥石による研摩方法は
（１）研摩量がノ９うつく。（２）砥石の寿命が短かく
不経び「である。（３）放熱板の表面を荒し外観が悪い
。（４）乾式では放熱板研斤時発熱を生じ半導体素子に
損傷を与える。（５） 研１３時、成形樹脂が放熱板に
くい込む。という欠点が生じていた。Further, in the second method described above, which is the polishing method using a grindstone, (1) the amount of polishing is increased by 9%; (2) The lifespan of the grinding wheel is short and the grinding wheel becomes unusable. (3) The surface of the heat sink is roughened and the appearance is bad. (4) In the dry method, the heat sink generates heat when grinding and damages semiconductor devices. ( 5) At the time of polishing 13, the molded resin was embedded in the heat sink, which was a drawback.
さらに、上記した第３の方法であるサンドペーパ一方法
は（１）手作業で時間がかかる。（２）サンドペーパー
の寿命が短かく不経済である。（３）研ＪＩＪｔｉが不
均一である。という欠点が生じてｖ）′ｆｃ。Furthermore, the third method described above, the sandpaper method, (1) is manual and time consuming. (2) Sandpaper has a short lifespan and is uneconomical. (3) Research JIJti is non-uniform. The disadvantage arises that v)'fc.
この発明は上記の点に鑑みてなされたもので、その目的
はプラスチ１．／り成形による半導体装置組み立て製造
工程において、プラスチック成形後、不要樹脂を経済的
にかつ完全に除去することができる半導体装置の不要樹
脂除去方法を提供することにある。This invention was made in view of the above points, and its purpose is to 1. An object of the present invention is to provide a method for removing unnecessary resin from a semiconductor device, which can economically and completely remove unnecessary resin after plastic molding in a semiconductor device assembly manufacturing process using remolding.
〔発明の概要〕
樹脂成形された半導体装置を２〜１０チ塩酸水溶液に浸
すことによって放熱板金属材料の表面を塩酸によシエッ
チングし、リフトオフ効果によシネ要樹脂を除去してい
る。ここで、リフトオフ効果とは下地が剥れるとその上
にある物も一緒に除去されることをいう。[Summary of the Invention] By immersing a resin-molded semiconductor device in an aqueous solution of 2 to 10% hydrochloric acid, the surface of the metal material of the heat sink is etched with hydrochloric acid, and the cine-required resin is removed by the lift-off effect. Here, the lift-off effect refers to the fact that when the base material is peeled off, the material on top of it is also removed.
以下、図面を参照してこの蛇明の一実施例を説明する。 Hereinafter, one embodiment of this snake light will be described with reference to the drawings.
まず、樹脂成形された第１図（Ａ）に示した平面図及び
第１図（Ｂ）に示した断面図をもつ半導体装置２１を第
２図に示すように２〜１０チ塩酸水溶液２２が入った容
器２３に５〜３０秒浸した後、十分に水洗いを行なう。First, a resin-molded semiconductor device 21 having a plan view shown in FIG. 1(A) and a cross-sectional view shown in FIG. After immersing it in the container 23 for 5 to 30 seconds, it is thoroughly washed with water.
その後、エアーブローにて水切りを行い、１００〜１５
０℃乾燥用コンベアにて乾燥をした後、リー ド切断し
、第１図（Ａ）に示した外部リード１５を半田槽（図示
せず）に授す。そして、上記半導体装置２１の電気的試
験を終了して半導体装置を完成させている。つま９、放
熱板１１上についている不要樹脂１３は放熱板１１を栴
成している金属材料が上記塩酸水溶液によりエツチング
されることによりリフトオフ効果によシ除去される〇〔
発明の効果〕
以上詳述したようにこの発明によれば、以下に述べる様
な効果を有している。After that, drain the water with an air blower and
After drying on a 0°C drying conveyor, the leads are cut and the external leads 15 shown in FIG. 1(A) are placed in a solder tank (not shown). Then, the electrical test of the semiconductor device 21 is completed, and the semiconductor device is completed. [
Effects of the Invention] As detailed above, the present invention has the following effects.
（１） ＢＬＡＳＴ投射剤または研摩砥石またはサン
ドペーノぐ−が不要とな９経済的である。(1) BLAST propellant or abrasive wheel or sandpaper gun is not required, making it economical.
（２）砥石方法またはサンドペーパー方法に比べて研摩
量のばらつきに依る外形寸法のばらつきをなくすことが
できる。(2) Compared to the grindstone method or the sandpaper method, variations in external dimensions due to variations in the amount of polishing can be eliminated.
（３）砥石方法またはサンドペーノぐ一方法に比べて研
摩ぐずが放熱板にくい込む事による放熱６果の悪化がな
くなり、外観的藺品価１直が向上する。(3) Compared to the grindstone method or the sandpaper method, there is no deterioration in heat dissipation due to grinding debris getting stuck in the heat sink, and the appearance and product cost per shift are improved.
（４）砥石方法またはサンドペーパ一方法に比べ研Ｊ≠
時の発熱に依る半導体素子への損傷がなくなり高信頼性
が得られる。(4) Compared to the grindstone method or sandpaper method, the grinding J≠
This eliminates damage to semiconductor elements due to heat generated during operation, resulting in high reliability.
（５）砥石方法またはサンドペーパ一方法に比べ部分的
な不要樹脂の除去のみならず、半導体装置の全ての部分
、例えばリード部の全ての部分の不要樹脂を除去する゛
ことができる。(5) Compared to the grindstone method or the sandpaper method, unnecessary resin can be removed not only partially but also from all parts of the semiconductor device, for example, all parts of the lead portion.
（６）従来方法に比べて不要樹脂を除去する時間が例え
ば５時間から３０分というように短縮することができる
。(6) Compared to conventional methods, the time required to remove unnecessary resin can be shortened, for example, from 5 hours to 30 minutes.
（７） ＢＬＡＳＴ方法ではリードフレームの伸びに
よる半導体装置に与える損傷を避けることは出来ないが
本発明に係る半導体装置の不要樹脂除去方法では全くそ
のようなことはない。(7) In the BLAST method, damage to the semiconductor device due to elongation of the lead frame cannot be avoided, but in the method for removing unnecessary resin from a semiconductor device according to the present invention, such a problem does not occur at all.
（８） ＢＬＡＳＴ方法でｔｉＨ音と粉塵の発生がさ
けられないが、本発明に係る半導体装置の不要樹脂除去
方法ではそのようなことはなく作業環境の忌化けない。(8) In the BLAST method, generation of TiH sound and dust is unavoidable, but the method for removing unnecessary resin from semiconductor devices according to the present invention does not cause such problems and does not make the working environment unpleasant.
第１図（蜀は従来におけるプラスチック成形後の半導体
装置の平面図、第１図（Ｂ）は第１図（Ａ）のＡ −Ａ
’ｌＪに沿う断面図、第２図はこの発明の一実施例を示
す半導体装置の不要樹脂除去方法を示す図である。
１１・・・放熱板、１２・・・成形樹脂、１３・・・不
要樹脂、１４・・・ダイパー、１５・・・夕）部リード
、２１・・・半導体装置、２２・・・塩酸水溶液。
矛１図
（Ａ）
矛１図
（８）Figure 1 (Shu is a plan view of a conventional semiconductor device after plastic molding, Figure 1 (B) is A-A of Figure 1 (A)
FIG. 2 is a sectional view taken along the line 'lJ' and is a diagram showing a method for removing unnecessary resin from a semiconductor device according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 11... Heat sink, 12... Molding resin, 13... Unnecessary resin, 14... Diaper, 15... Part lead, 21... Semiconductor device, 22... Hydrochloric acid aqueous solution. Spear 1 figure (A) Spear 1 figure (8)
Claims (1)
記半導体装置を水洗いする工程とを具備したことを特徴
とする半導体装置の不要樹脂除去方法。A method for removing unnecessary resin from a semiconductor device, comprising the steps of immersing a resin-molded semiconductor device in a chemical, and washing the semiconductor device with water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22132082A JPS59111335A (en) | 1982-12-17 | 1982-12-17 | Removing method of resin unnecessary for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22132082A JPS59111335A (en) | 1982-12-17 | 1982-12-17 | Removing method of resin unnecessary for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59111335A true JPS59111335A (en) | 1984-06-27 |
Family
ID=16764951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22132082A Pending JPS59111335A (en) | 1982-12-17 | 1982-12-17 | Removing method of resin unnecessary for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59111335A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922783A (en) * | 1972-06-21 | 1974-02-28 | ||
| JPS56110242A (en) * | 1980-02-06 | 1981-09-01 | Mitsubishi Electric Corp | Removal of oozed resin thin film |
| JPS5766657A (en) * | 1980-10-14 | 1982-04-22 | Noge Denki Kogyo:Kk | Apparatus for automatically removing molded film before finish plating for external lead of molded semiconductor device |
| JPS6024586A (en) * | 1983-07-21 | 1985-02-07 | ソニー株式会社 | Display data processing circuit |
-
1982
- 1982-12-17 JP JP22132082A patent/JPS59111335A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922783A (en) * | 1972-06-21 | 1974-02-28 | ||
| JPS56110242A (en) * | 1980-02-06 | 1981-09-01 | Mitsubishi Electric Corp | Removal of oozed resin thin film |
| JPS5766657A (en) * | 1980-10-14 | 1982-04-22 | Noge Denki Kogyo:Kk | Apparatus for automatically removing molded film before finish plating for external lead of molded semiconductor device |
| JPS6024586A (en) * | 1983-07-21 | 1985-02-07 | ソニー株式会社 | Display data processing circuit |
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