JPS59111230A - イオン発生装置 - Google Patents

イオン発生装置

Info

Publication number
JPS59111230A
JPS59111230A JP57218309A JP21830982A JPS59111230A JP S59111230 A JPS59111230 A JP S59111230A JP 57218309 A JP57218309 A JP 57218309A JP 21830982 A JP21830982 A JP 21830982A JP S59111230 A JPS59111230 A JP S59111230A
Authority
JP
Japan
Prior art keywords
anode
cathode
ion
potential
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57218309A
Other languages
English (en)
Japanese (ja)
Other versions
JPH043056B2 (enrdf_load_stackoverflow
Inventor
Katsuhiro Kageyama
影山 賀都鴻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57218309A priority Critical patent/JPS59111230A/ja
Publication of JPS59111230A publication Critical patent/JPS59111230A/ja
Publication of JPH043056B2 publication Critical patent/JPH043056B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/04Ion sources; Ion guns using reflex discharge, e.g. Penning ion sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Tubes For Measurement (AREA)
  • Electron Sources, Ion Sources (AREA)
JP57218309A 1982-12-15 1982-12-15 イオン発生装置 Granted JPS59111230A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57218309A JPS59111230A (ja) 1982-12-15 1982-12-15 イオン発生装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57218309A JPS59111230A (ja) 1982-12-15 1982-12-15 イオン発生装置

Publications (2)

Publication Number Publication Date
JPS59111230A true JPS59111230A (ja) 1984-06-27
JPH043056B2 JPH043056B2 (enrdf_load_stackoverflow) 1992-01-21

Family

ID=16717818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57218309A Granted JPS59111230A (ja) 1982-12-15 1982-12-15 イオン発生装置

Country Status (1)

Country Link
JP (1) JPS59111230A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150010A (en) * 1990-03-14 1992-09-22 Kabushiki Kaisha Toshiba Discharge-in-magnetic-field type ion generating apparatus
WO2006115172A1 (ja) * 2005-04-22 2006-11-02 Masanobu Nunogaki 固体イオン源

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150010A (en) * 1990-03-14 1992-09-22 Kabushiki Kaisha Toshiba Discharge-in-magnetic-field type ion generating apparatus
WO2006115172A1 (ja) * 2005-04-22 2006-11-02 Masanobu Nunogaki 固体イオン源

Also Published As

Publication number Publication date
JPH043056B2 (enrdf_load_stackoverflow) 1992-01-21

Similar Documents

Publication Publication Date Title
US4800281A (en) Compact penning-discharge plasma source
Stirling et al. 15 cm duoPIGatron ion source
US4737688A (en) Wide area source of multiply ionized atomic or molecular species
JPS62235485A (ja) イオン源装置
CA1252581A (en) Electron beam-excited ion beam source
JPS59111230A (ja) イオン発生装置
Bacal et al. Effect of cesium and xenon seeding in negative hydrogen ion sources
Schulz Sputter-ion pumps
GB1398167A (en) High pressure ion sources
JPH0488165A (ja) スパッタ型イオン源
JPH0334178B2 (enrdf_load_stackoverflow)
Gotoh et al. Development of compact microwave ion source for low-energy application
JPH024979B2 (enrdf_load_stackoverflow)
JPS5853140A (ja) イオン発生装置
JP2620474B2 (ja) イオンプレーティング装置
US5025194A (en) Vapor and ion source
JPS58157033A (ja) イオン発生装置
JP3409881B2 (ja) Rf放電型イオン源
Taylor et al. Atomic Energy of Canada Limited
JPS6260788B2 (enrdf_load_stackoverflow)
JPS58157034A (ja) イオン発生装置
Rao et al. A broad beam cold cathode Penning ionization gauge ion source for ion‐beam‐assisted deposition
JPS59121734A (ja) イオン発生装置
JPH01189838A (ja) イオン源
Stognij et al. A wide-aperture source of oxygen ions with a hollow cold cathode and magnetic multicast