JPS59107479A - Bubble memory device - Google Patents

Abstract

PURPOSE:To prevent the breakdown or errors of data due to an operation mistake by checking a temporary memory circuit before data reading/writing and reading out an index mark page to store the read-out position in a control circuit for reading/writing if the temporary memory circuit is set at the setting side (instantaneous stop). CONSTITUTION:A temporary memory circuit 15 is checked before writing and reading data. If the circuit 15 is set at the resetting side (correct index position is stored in a control circuit 13), the data is directly read and written with a command of the memory 13. While the index page in a bubble memory device 10 is read by an index mark reading circuit 11 if the circuit 15 is set at the setting side (instantaneous stop). The position of the index page is stored in the circuit 13, and then the data is read and written. As a result, it is not needed to produce a program or to perform the operator working due to an instantaneous stop. This prevents the breakdown or errors of data owing to an operation mistake.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bubble memory device suitable for use in small calculations (auxiliary memory for numbers, kanji pattern memory, image processing memory, terminal device lobe, program memory for NC, etc.).

Baffle memory devices create cylindrical magnetic domains (called bubbles) in a magnetic single crystal thin film by applying a bias magnetic field perpendicular to the film surface.
It is a memory device compatible with ++ and it Ot+. When a permalloy pattern is placed on the thin film and a magnetic field parallel to the film surface is applied, the permalloy pattern becomes magnetized.
Attract or repel bubbles.

When this parallel magnetic field is rotated, the positions of the magnetic poles of the permalloy pattern are sequentially moved, and the baffle can be transferred.

This rotating parallel magnetic field is generated by passing current through a straight coil. Normally, a permanent magnet is used for the bias magnetic field, so it is advantageous to use a non-volatile memory.

Now, as shown in Figure 1, a bubble memory device with a major line/minor loop configuration has a minor loop 1 for storing data, a major line 2 for reading data, and a writing line 2 for writing data. It has a measuring line 3, a detector 4 for reading, and a bubble generator 5 for writing. A large number of minor loops 1 are arranged in parallel to major lines 2 and 3.

There are various methods for reading and writing data.Here, we will explain a bubble memory device using a swap/replicate method (writing is performed by exchanging bubbles, and reading is performed by duplicating bubbles).

In the case of reading, the bubbles located at the replicate position of each minor loop 1''2 are duplicated and transferred onto the reading major line 2 all at once. The original baffle remains on the minor loop 1 as it is. In the case of writing, the bubble on the major line 3 for writing and the bubble at the swap position on the minor loop are exchanged all at once.

Therefore, a data group is read and written by the operation of the bubble generators located at the same position in the parallel direction on each minor loop 1. This data group is called a page.

In order to treat the page as meaningful data, it is necessary to recognize where the page is located on the minor loop. Normally, as shown in Figure 2, an index mark page IP is created in each minor loop 1''2, and from there, each page IP ~ ( M-1) P and number January.

Therefore, before reading or writing data to the baffle memory device (first, the index mark page IP is found, its position is recorded in the control circuit that commands data reading and writing, and the set index The bubble memory device is magnetically rotated based on the position of the mark page IP to read and write data.

By the way, if the drive voltage for generating the rotating magnetic field of the bubble memory device decreases due to instantaneous power failure during reading or writing of data, the bubble memory device may not be able to rotate as instructed. Furthermore, the voltage supplied to the control circuit may drop, which may destroy the memory of the position of the index mark page IP. In this case, the current position of the index mark page IP managed by the control circuit and the current position of the index mark page IP in the bubble memory device will no longer match. Then, even if the control circuit tries to read or write an address (page) in the bubble memory device specified by the control circuit, the data will be read or written to a different address than the one specified in the bubble memory device, resulting in data destruction or A reading error will occur.

Therefore, in order to match the index mark page position managed by the control circuit with the index mark page position in the buffer memory device, it is necessary to search for the index mark page in the bubble memory device again. .

Until now, a voltage monitoring circuit has been used to notify the operator when the drive voltage for generating the rotating magnetic field of the bubble memory device and the supply voltage to the control circuit are momentarily interrupted. Before reading or writing data, the operator issues a command each time to read the index mark page and store its position in the control circuit, or in such cases, reads the index mark and stores it in the control circuit. It was necessary to program it in advance to fix it.

The present invention aims to provide a bubble memory device that eliminates the need for such operator work and program creation, and prevents data destruction and errors due to operational errors.

Embodiments of a bubble memory device according to the present invention will be described below with reference to the drawings.

As shown in FIG. 3, the bubble memory device includes a bubble memory device 10, an index mark reading circuit 11 that reads an index mark page of the bubble memory device 10, and an index mark reading circuit 11 that reads the index mark page of the bubble memory device 10.
a data read/write circuit 12 for reading from 0 and writing data into the bubble memory device; a control circuit 13 for storing index mark positions and instructing data reading and writing; Voltage monitoring circuit 1 that monitors supply voltage
4, 7 lip 70 tub, temporary memory circuit 1 such as register
5. Here, the voltage monitoring circuit 14 turns on when it is detected that each of the supply voltages has fallen below the operating range. Further, the temporary storage circuit 15 enters a reset state when the control circuit 13 reads the index mark page through the index mark successive output circuit 11 and stores its position internally.
When the voltage monitoring circuit 14 is turned on, it enters the set state.

In the above configuration, the temporary memory circuit 15 is checked in the 11 devices that read and write data, and if it is on the reset side (meaning that the correct index mark peno position is stored in the control circuit 13). , read and write data as is according to the commands of the control circuit 13,
If it is negative on the set side (meaning there was an instantaneous power outage), the circuit 11 continuously prints index marks on the index mark page in the bubble memory device 10.
After reading the position and storing it in the control circuit,
Then read and write data.

According to the configuration of this embodiment, when an instantaneous power outage occurs, the index mark hedge position stored in the control circuit 13 does not coincide with the current position of the index mark page in the memory device 10. Even if I don't do it,
Since the index mark page is automatically read into the control circuit again before reading or writing data, the operator does not have to worry about momentary power outages at all.

As described above, according to the present invention, it is possible to obtain a bubble memory device that eliminates the need for operator work or program creation due to instantaneous power outages, and that can prevent data destruction and errors due to operational errors.

[Brief explanation of the drawing]

FIG. 1 is a block diagram showing the configuration of a general bubble memory device, FIG. 2 is an explanatory diagram thereof, and FIG. 3 is a block diagram showing an embodiment of a bubble memory device according to the present invention. 1...Minor loop, 2.3...Major line, 4...Detector, 5...Bubble generator, 10...
Bubble memory device, 11... Index memory successive circuit, 12... Data read/write circuit, 13
...Control circuit, 14...Voltage monitoring circuit, 15...
temporary memory circuit. Patent applicant Tokyo Denki Kagaku Kogyo Co., Ltd. Representative Patent attorney Takashi Murai Figure 1 Figure 2

Claims (1)

[Claims] (1) a bubble memory device, a data read/write circuit that reads data from and writes data to the bubble memory device, a control circuit that stores the index mark position of the bubble memory device, and a bubble memory device; In a bubble memory device comprising a memory device and a voltage monitoring circuit that monitors supply voltage to each circuit, when the voltage monitoring circuit detects that the supply voltage has fallen below an operating range,
I', 0; A bubble memory device characterized by re-memorizing data.