JPS59105380A - Photosensitive solid-state oscillation element - Google Patents
Photosensitive solid-state oscillation elementInfo
- Publication number
- JPS59105380A JPS59105380A JP57214886A JP21488682A JPS59105380A JP S59105380 A JPS59105380 A JP S59105380A JP 57214886 A JP57214886 A JP 57214886A JP 21488682 A JP21488682 A JP 21488682A JP S59105380 A JPS59105380 A JP S59105380A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photo receiving
- receiving surface
- oscillation
- photosensitive solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010355 oscillation Effects 0.000 title abstract description 18
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 2
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- 230000036211 photosensitivity Effects 0.000 abstract 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光量により発振周波数を制御する光感固体発振
素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a photosensitive solid-state oscillation device whose oscillation frequency is controlled by the amount of light.
従来例の構成とその問題点 第１図に光感固体発振素子の従来構造の断面図を示す。Conventional configuration and its problems FIG. 1 shows a cross-sectional view of a conventional structure of a photosensitive solid-state oscillation device.
例えば、Ｐ型半導体層１の上に形成されたＮ型成長層２
の上面にＰ型拡散層３を形成し、このＰ型拡散層３の上
面にＮ型拡散層４を形成し、Ｎ型成長層２とＮ型拡散層
４の表面にそれぞれオーミック電極６，６を設け、場合
によってはＰ形半導体層１にもオーミック電極７を設け
た構造となっている。For example, an N-type growth layer 2 formed on a P-type semiconductor layer 1
A P-type diffusion layer 3 is formed on the upper surface, an N-type diffusion layer 4 is formed on the upper surface of this P-type diffusion layer 3, and ohmic electrodes 6, 6 are formed on the surfaces of the N-type growth layer 2 and the N-type diffusion layer 4, respectively. , and in some cases, an ohmic electrode 7 is also provided on the P-type semiconductor layer 1.
この光感固体発振素子の電極５，６間に、Ｎ型成長層２
とＰ型拡散層３との間の接合に対して逆バイアスとなる
ように電圧を印加し、素子に光を照射すると発振を開始
する。この時の発振周波数は光量（Ｃ比例する。一定の
発振周波数を得るには、所定の波長範囲であってしかも
一定の光量が必要である。しかし、従来の構造では光の
利用効率が十分でなく、光源の消費電力、及び発振素子
のチップ面積に制約を受ける等の問題点があった。又、
光源の発振強度分布にバラツキがあった時には所定波長
範囲内での一定の光量が得られず、必要な発振周波数が
得られないこともしばしば起っていた。Between the electrodes 5 and 6 of this photosensitive solid-state oscillator, an N-type growth layer 2
When a reverse bias voltage is applied to the junction between the P-type diffusion layer 3 and the P-type diffusion layer 3, and the element is irradiated with light, oscillation starts. The oscillation frequency at this time is proportional to the amount of light (C. To obtain a constant oscillation frequency, it is necessary to have a certain wavelength range and a constant amount of light. However, the conventional structure does not have sufficient light utilization efficiency. However, there were problems such as being limited by the power consumption of the light source and the chip area of the oscillation element.
When there are variations in the oscillation intensity distribution of the light source, a constant amount of light within a predetermined wavelength range cannot be obtained, and it often happens that the necessary oscillation frequency cannot be obtained.
発明の目的
本発明は光源からの光の利用率の大きい素子構造、特に
受光面の形状を改良して、上記問題点の解消を図っ／ヒ
光感固体発振素子を提供するものである。OBJECTS OF THE INVENTION The present invention aims to solve the above-mentioned problems by improving the element structure, particularly the shape of the light-receiving surface, which has a high utilization rate of light from a light source.
発明の構成
本発明は光照射により発振動作する光感固体発振素子の
受光面を波状あるいは凹凸状として実質的な受光面積を
増加させたものである。Structure of the Invention According to the present invention, the light-receiving surface of a photosensitive solid-state oscillator that oscillates when irradiated with light is made wavy or uneven to increase the substantial light-receiving area.
実施例の説明
第２図に示す実施例では接合構造は第１図示の従来例と
同じであるが、Ｎ型成長層１およびＰ型拡散層３の表面
部、すなわち、光感固体発振素子の受光面を波状にする
ことにより、受光面積を増加させている。この受光面の
形状は、不規則な凹凸状であってもよい。本実施例では
受光面積が増加していることにより、光源から受光面に
到達した光が表面で良く吸収・され、受光面が平面であ
った従来の場合よりも光感度が向上し、従来の場合よシ
も少ない光量で発振が開示する。又、光量が同一ならば
従来の場合よりも高い周波数で発振する。DESCRIPTION OF THE EMBODIMENTS In the embodiment shown in FIG. 2, the junction structure is the same as that of the conventional example shown in FIG. By making the light-receiving surface wavy, the light-receiving area is increased. The shape of this light-receiving surface may be irregularly uneven. In this example, the light-receiving area is increased, so the light that reaches the light-receiving surface from the light source is well absorbed on the surface, and the light sensitivity is improved compared to the conventional case where the light-receiving surface was flat. In some cases, oscillation occurs with a small amount of light. Furthermore, if the amount of light is the same, it oscillates at a higher frequency than in the conventional case.
発明の効果
以上の様に、本発明によりこの光感固体発振素子は、従
来のものよりも、少ない光量で発振を開始でき、かつ、
受光量に対する発振周波数が高くできるために、光源の
消費電力を低減することができる・、マた、実質的な受
光面が増加しているために光感固体発振素子のチップ面
積を低減できるという効果を有する。さらに、本発明を
例えばＬＥＤを光源とするフォトカプラーに用いた場合
にはＬＥＤの発光強度分布の許容範囲が広がりフォトカ
プラーの歩留向上（でもつながる。As described above, the photosensitive solid-state oscillator according to the present invention can start oscillation with a smaller amount of light than conventional ones, and
Since the oscillation frequency can be increased relative to the amount of light received, the power consumption of the light source can be reduced.In addition, the chip area of the photosensitive solid-state oscillator can be reduced because the effective light-receiving surface area has been increased. have an effect. Furthermore, when the present invention is applied to a photocoupler using an LED as a light source, for example, the permissible range of the emission intensity distribution of the LED is expanded, and the yield of the photocoupler is improved.
第１図は従来の光感固体発振素子の断面図、第２図は本
発明の実施例に係る光感固体発振索子を示す断面図であ
る。
１・・・・・・Ｐ型半導体、２・・・・・・Ｎ型成長層
、３・旧・・Ｐ型拡散領域、４・・・・・Ｎ型拡散領域
、５，６・・川・電極、７・・・・・・補助電極。FIG. 1 is a cross-sectional view of a conventional photosensitive solid-state oscillation device, and FIG. 2 is a cross-sectional view showing a photosensitive solid-state oscillator according to an embodiment of the present invention. 1... P-type semiconductor, 2... N-type growth layer, 3... Old P-type diffusion region, 4... N-type diffusion region, 5, 6... River・Electrode, 7...Auxiliary electrode.
Claims (1)
反対導電型の成長層と、前記成長層の主面に形成されだ
１導電型の第１の不純物拡散層と、前記第１の不純物拡
散層内に形成された反対導電型の第２の不純物拡散層を
それぞれそなえるとともに、前記成長層の光照射面を波
状′＝！たは凹凸形状になしたことを特徴とする光感固
体発振素子。a first conductivity type semiconductor substrate, a growth layer of an opposite conductivity type formed on the semiconductor substrate, a first impurity diffusion layer of the first conductivity type formed on a main surface of the growth layer, and the first impurity A second impurity diffusion layer of an opposite conductivity type is formed in each diffusion layer, and the light irradiation surface of the growth layer is shaped like a wave ′=! A photosensitive solid-state oscillator device characterized by having an uneven shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57214886A JPS59105380A (en) | 1982-12-08 | 1982-12-08 | Photosensitive solid-state oscillation element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57214886A JPS59105380A (en) | 1982-12-08 | 1982-12-08 | Photosensitive solid-state oscillation element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59105380A true JPS59105380A (en) | 1984-06-18 |
Family
ID=16663187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57214886A Pending JPS59105380A (en) | 1982-12-08 | 1982-12-08 | Photosensitive solid-state oscillation element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59105380A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9190551B2 (en) | 2009-02-24 | 2015-11-17 | Hamamatsu Photonics K.K. | Photodiode and photodiode array |
| US9419159B2 (en) | 2009-02-24 | 2016-08-16 | Hamamatsu Photonics K.K. | Semiconductor light-detecting element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323287A (en) * | 1976-08-16 | 1978-03-03 | Hiroyuki Sakaki | Photoelectric converting element |
-
1982
- 1982-12-08 JP JP57214886A patent/JPS59105380A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323287A (en) * | 1976-08-16 | 1978-03-03 | Hiroyuki Sakaki | Photoelectric converting element |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9190551B2 (en) | 2009-02-24 | 2015-11-17 | Hamamatsu Photonics K.K. | Photodiode and photodiode array |
| US9419159B2 (en) | 2009-02-24 | 2016-08-16 | Hamamatsu Photonics K.K. | Semiconductor light-detecting element |
| US9614109B2 (en) | 2009-02-24 | 2017-04-04 | Hamamatsu Photonics K.K. | Photodiode and photodiode array |
| US9972729B2 (en) | 2009-02-24 | 2018-05-15 | Hamamatsu Photonics K.K. | Photodiode and photodiode array |
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