JPS59100262A - Palladium activating solution - Google Patents
Palladium activating solutionInfo
- Publication number
- JPS59100262A JPS59100262A JP20938582A JP20938582A JPS59100262A JP S59100262 A JPS59100262 A JP S59100262A JP 20938582 A JP20938582 A JP 20938582A JP 20938582 A JP20938582 A JP 20938582A JP S59100262 A JPS59100262 A JP S59100262A
- Authority
- JP
- Japan
- Prior art keywords
- palladium
- wiring
- complexing agent
- salt
- activation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1813—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by radiant energy
- C23C18/1817—Heat
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
- C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本伯明は、タングステ/、モリブデンなどのVl、実高
融点金属をメタライズを妃、諌1〜た湿式セラミック基
板において、1咳1紀線のみ化学めっきtiJ能ならし
めるだめのパラジウム活性化液に関するものである。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a wet ceramic substrate in which Vl such as tungsten, molybdenum, and real high-melting point metals are metallized, and only one line is formed on the first line. This relates to a palladium activating solution for chemical plating.
セラミック基板には、乾式基板と侵式基板とがある。前
者の乾式基板は、セラミックの板に貴金属を含むインク
・で□印刷、配線し、ワ1000“C以下の温度で焼成
すそものである。配線が貴金属で形成され′Cいるので
、配線としての導体抵抗も小さく、配−の腐食もなく、
はんだ付は性も良く、特別な活性化処理を行わなくても
配S上のみ化学めつき0T能である。しかし、次のよう
な欠点があった。すなわち、貴金属を用い□るので高師
である、製造上、多層配線が離しい。Ceramic substrates include dry type substrates and erodible type substrates. The former dry-type board is a ceramic plate printed with ink containing precious metals and wired, and then fired at a temperature of 1000°C or less.Since the wiring is made of precious metals, it is difficult to use as wiring. Conductor resistance is low, and there is no corrosion of wiring.
It has good soldering properties and can be chemically plated at 0T only on the solder plate without any special activation treatment. However, it had the following drawbacks. In other words, since precious metals are used, multilayer wiring is expensive and requires separation from the multilayer wiring.
そこで、そのような欠点の無い湿式基板が考えられた。Therefore, a wet type substrate without such drawbacks was devised.
この湿式基板は、粘土状の、岬仮にタングステン、モリ
ブデンなどの高融点金属(佐述の焼成τ高度が高いだめ
)を含むインクで印1bll、配線しこのような粘土状
の4Bを重ね合わせて、約1500’Oの温度で膚成す
るものである。これによって、罐雑な配線を多層構造で
形成せしめることができる。しかし、この方法には、以
下のような欠点があった。配線導体が爾融点金属からな
るため、(1)導体抵抗が大きい;(11)直接にIC
LSIのはんだ付け、ワイヤボンデングが出来な−い;
などである。かかる欠点を補うため、縞融点金属表面を
めっきによって改質し1.導体抵抗□を小さくシ、はん
だ付け、ワイヤボンデングtd丁lf目ならしめるよう
にすることが考えられる。This wet type board is made of clay-like material, and is marked with 1 bl of ink containing high-melting point metals such as tungsten and molybdenum (the firing temperature is high). It forms at a temperature of about 1500'O. As a result, complicated wiring can be formed in a multilayer structure. However, this method had the following drawbacks. Since the wiring conductor is made of a metal with a melting point, (1) the conductor resistance is high; (11) it is directly connected to the IC;
Unable to solder LSI or wire bond;
etc. In order to compensate for this drawback, the surface of the fringe melting point metal is modified by plating.1. It is conceivable to reduce the conductor resistance □, solder it, or wire bond it to make it even.
このめっきは、化学めっきによってなされる。This plating is done by chemical plating.
しかし、高融点金属は化学的に不活性のため、化学めっ
きをすそには、尚融点金属の配線上のみを活性化する必
要がある。However, since high melting point metals are chemically inactive, it is necessary to activate only the melting point metal wiring before chemical plating.
このような活性化液としては、、イ♀公昭、55−43
275号公報、特開昭53793129号公報に記載さ
れているものがある。これらにおいては、活性化、金属
としてパラジウムを使用している。As such an activating solution, I♀Kiakiaki, 55-43
Some of them are described in JP-A No. 275 and JP-A-53793129. In these, palladium is used as the activating metal.
しかし、化学めっき可能ならしめるためにパラジウム処
4することは、侍公昭34−8256号公報に記載され
ている。特公昭sm−qs129号公氾におi毬ものの
特徴とするところは、同公報に記載のごとく、活性化液
のPl]はlVa族金属の表面にパラジウム析出量を短
時間に多くするためV(効果あるものであって、パラジ
ウムを析出させるために本質的に必−要なものでeよな
いので、アルカリ性溶〆■中、パラジ□ウムが沈殿する
ことのないようにするパラジウム錯化剤にある。すなわ
ち、Iva旌金属に多量のパラジウムを析□出させるに
は、前もつ゛〔、アルカリ性溶液中に基板を浸漬12.
1vα族余属の酸化度、換を剥離しておけばよく、まだ
、長時間活性化液の処理を行えばよく、さらに活性化液
中のパラジウム一度を、6くしておりばよい。呼開昭5
3−9’3129号公報の記載で代表される従来技術に
はこのような粂件的制約の欠点があった。However, it is described in Samurai Publication No. 34-8256 that palladium treatment 4 is applied to make the material suitable for chemical plating. As stated in the same publication, the special feature of the I-balloon in the Publication of Special Publication Sho SM-QS129 is that, as stated in the same publication, Pl in the activating solution is V in order to increase the amount of palladium deposited on the surface of the lVa group metal in a short time. (A palladium complexing agent that prevents palladium from precipitating in an alkaline solution because it is effective and is essentially necessary for precipitating palladium. That is, in order to deposit a large amount of palladium on IV metal, it is necessary to immerse the substrate in an alkaline solution in step 12.
It is only necessary to remove the oxidation degree and oxidation of the 1vα group, and it is sufficient to perform the activation liquid treatment for a long time, and furthermore, it is sufficient to reduce the palladium content in the activation liquid to 6. Kokai Showa 5
The prior art typified by the description in Publication No. 3-9'3129 has the disadvantage of such physical limitations.
弱酸性〜rルカリ性溶液中、パラジウムは、以Fの反応
で1峻化物(あるいは、水酸化物)を生成する。In a weakly acidic to r-alkaline solution, palladium produces a monosulfide (or hydroxide) in the following reaction.
lゝd” +14jO= Pd O+2H+
・・・・・・・・・・・(2)Pd′+とじて存在で
きる一度(no+7/l )=tO,’・−6−2pH
4,、、、、、、、、、(2ン上式より、水酸性のPr
4が13のとき、P+d+濃度としCは、4 、5 X
10 mo I / eである。 。ld” +14jO= Pd O+2H+
・・・・・・・・・・・・(2) Once that can exist as Pd'+ (no+7/l)=tO,'・-6-2pH
4, , , , , , (2) From the above formula, hydroxyl Pr
When 4 is 13, P+d+ concentration and C is 4,5
10 mo I/e. .
一方、エチレンジアミン四酢酸を用いて、Pi(:13
〕水rt3 H中、全DJ、 10’ mol / (
1(D Pd2+ヲ、4.5(10+nol/lとなる
まで錯化するなめには以1;のごとくである。On the other hand, using ethylenediaminetetraacetic acid, Pi(:13
] Total DJ in water rt3H, 10' mol/(
1(D Pd2+wo, 4.5(10+nol/l) is as follows.
il)”1.’A、’ +4b”
=Pd −In)TA (生成定数: 1o、 )−
・(3)の反応式から(ED’rA’−はエチレンジア
ミン四酢酸イオンを示す)、
水45 iH中のpci’+濃度(【no l 、/
l )Pd −11”A濃度は、はぼ、10 mol
ilに近似できるので、Pd”蹟度が4.5 X 1.
0” mo I/lとなるためVこは、gu’rA
一度として、7 X I Ll’1ηo、1/l必装で
ある。エチレンジアミン四酢酸(あるいは、そのアルカ
リ金属塩)の水浴e、に対するm解反ま1m01:、/
l以下である。よって従来技術のパラジウム活性化液に
は、錯化したパ、?ジウム(1’d−’、1す1)TA
)、遊離のパラジウム(イlわち、Pd2−’“)とと
も(〆こ、・々ラジウノ・酸化向(f’dU ) を
′r1゛むものであった。この酸化物除去のだめに、活
性化液を使用前にIfI]1孔度0.671 Illの
フィルタで濾過しても、以Fの4(大な障Nを生じた。il)"1.'A,'+4b" =Pd-In)TA (Generation constant: 1o, )-
・From the reaction formula (3) (ED'rA'- indicates ethylenediaminetetraacetic acid ion), pci'+ concentration in water 45 iH ([no l, /
l) Pd-11”A concentration is 10 mol
Since it can be approximated to il, the Pd" vulgarity is 4.5 x 1.
0" mo I/l, so Vkoha, gu'rA
At one time, 7 X I Ll'1ηo, 1/l is mandatory. Dissolution of ethylenediaminetetraacetic acid (or its alkali metal salt) in a water bath e, 1m01:,/
l or less. Therefore, the palladium activation solution of the prior art contains complexed palladium, ? Dium (1'd-', 1s1)TA
), it contained free palladium (Il, Pd2-'") as well as (f'dU). In order to remove this oxide, the activity Even if the solution was filtered through a filter with a porosity of 0.671 Ill before use, the following F4 (major failure N) occurred.
いかiCll(!]孔Iatの小さいフィルタで酸化物
を活性化液より除去(−2でも、篩いにかけ/こだけで
あって、0.61n以下のベラジウム酸化吻が活性化液
中にイノ在する。この活性化液を用いて、タングステン
配線セラピック基板全活1隼化すると、以Fの間、山を
生じ、・こ。Squid iCll (!) Remove oxides from the activation solution using a filter with small pores Iat (-2 is also sieved/this is all that is needed to ensure that veradium oxides of 0.61n or less are present in the activation solution. When a tungsten wiring ceramic board is fully activated using this activation solution, a mountain will form for a while.
14開昭53−93129号公報に記載のごとく、タン
グステン上にパラジウムが析出するので、タングステン
配置課」−(・こ化学めっき(例えば、化学ニッケルめ
っき)Cきる。しかし、7占1生fヒ液中ノ酸化パジジ
ウ11粒子がタングステン配線以外のセラミック41メ
ス上に付層するだめ、これがめつき核となってめっき(
以ド、異常析出と称す)される。化学めっきのめつき厚
さが薄い(1μIn以ト」)とさ、精成析出は肉眼的に
は観察されないが1.1に行して配線された得体間のe
3縁抵抗の低ドとして現われる。化学めっきの厚さが5
μm11を越えると、セラピック基板全体が灰色となり
2厚木間の絶縁抵抗が極め℃小さくなる。すなわち、1
vσ族金属か配線された湿式セラミック基板は、−1−
記のような従来技術の欠点によって、多司゛に生芹でき
るものではなかった。まだ、商密鵬(・(=配線さhた
基板ケ、高絶縁性を維持して装作できるものでij:な
かった。As described in Japanese Patent Application No. 14-1983-93129, since palladium precipitates on tungsten, chemical plating (for example, chemical nickel plating) is possible. The 11 particles of oxidized metal in the liquid form a layer on the ceramic 41 female other than the tungsten wiring, and this becomes the plating nucleus and causes the plating (
(hereinafter referred to as abnormal precipitation). When the plating thickness of chemical plating is thin (less than 1 μIn), the fine precipitation cannot be observed with the naked eye, but it is difficult to see the e between the interconnected objects as shown in 1.1.
It appears as a low 3-edge resistance. The thickness of chemical plating is 5
When the temperature exceeds μm11, the entire ceramic substrate becomes gray and the insulation resistance between the two thick pieces of wood becomes extremely small. That is, 1
The wet ceramic substrate wired with vσ group metal is -1-
Due to the drawbacks of the prior art as described above, it has not been possible for many people to use the technique. As of yet, there was no circuit board with wiring that could be mounted while maintaining high insulation.
本発明の目的は、上古己した従来のパラジウノ・活性化
液の人点全ft<I、、セラハック基板の■α族金属配
線にのみパラジウム金付肩させ、後[僅の化tめっきで
の異常析出(バタン外析出)を皆無とし、長寿命化を課
するに有効なパラジウム活性化液を提供するにある。The purpose of the present invention is to apply palladium gold only to the α group metal wiring of the Cerahac board, and then [with a small amount of chloride plating]. It is an object of the present invention to provide a palladium activation liquid that is effective in eliminating abnormal precipitation (external precipitation) and extending life.
本発明のパラジウム活性化液の#畝とするところは、水
溶性パラジウム塩、パラジウムの錯化剤、およびに’F
L調樒剤を必須成分として含んでlるパラジウムI舌]
生化液において、N’1g己のバラジウノ1.ノ)、借
化剤は、ドc1己一般式(1)、+121Q (−(:
市(−゛市1NH−者tl ・・・・(1)(こ
こ(′こ、n=2〜6の整数)
ご・J<される什、汀閾であることにある。こ(υパラ
ジウムイ占1生比ti’i、 ’tc校いて“、好まし
くは、l’l(の直ki 10〜14,5でイ)す、パ
ラジウム濃度は活性化1代1リットル当りILI −1
0(1)パ)■であり、錯化剤/バラジウノ・のモル1
υrl比は2〜100 Fl Oであるものがr4.い
。また、前の水溶性パラジウム塩の好ましいものは、塩
化パラジウム、硝1賀パラジウム1.仔よび硫1俊パラ
ジウムよりlるtll、中より選択さ′t1メζ111
j[以に含:含んでなるものであり、好よし2い調整剤
はアルカリ金属の水1俊化吻−Cある。The #ridges of the palladium activation solution of the present invention are a water-soluble palladium salt, a palladium complexing agent, and a
Palladium I tongue containing L-modifier as an essential ingredient]
In the biochemical solution, N'1g of Balajiuno 1.ノ), the borrowing agent is the general formula (1), +121Q (-(:
City (−゛市1NH−人tl...(1)(here('here, n=an integer from 2 to 6) is the threshold of the ti, where it is done.This(υ palladium If the ratio is 1, preferably 10 to 14,5, the palladium concentration is ILI -1 per liter of activation.
0 (1) pa)■, and 1 mole of complexing agent/baradium
If the υrl ratio is 2 to 100 FlO, it is r4. stomach. Further, preferable water-soluble palladium salts include palladium chloride, palladium nitrate 1. Selected from 1 and 1 palladium, selected from
A preferred regulator is an alkali metal aqueous compound.
tりお、前置[2の一役式(1)で示されるパラジウム
の錯化hすの好ましいものとしては、トリエチレンjト
ンミン(n−3)%テトラエチレンペンタミン(n=4
)、ペンタエチレンへキサミン((1、−+5 )より
なる群中より選択された1種以上牙昌−んでなるものが
良い。Preferably, the complexing of palladium represented by the formula (1), which plays a role in
), pentaethylenehexamine ((1, -+5)), and one or more selected from the group consisting of (1, -+5).
本発明者−1tは、砿々の錯化剤を倹討した結果上s己
の一般式(1)で示される錯化剤が極めて曖れた・行性
を有することを見出すに至つ/こ。一般的な化合物の水
浴液に対するC容解反は、およそ1mol/lをf−i
するが、重金属の錯化剤は一般に与件か強く、かつ廃液
処理し維いので、およぞ0.2叩) I/l! 4−a
Ijj’、でPd2″−濃度を4.5 X 10
mol/71 トするほど踵<錯化する錯化剤のパラジ
ウムとの生成定数を、上iLの式(6)を参考にして求
めると、パラジウムと錯化剤がモル比で1:1で結合す
るものは1026.1:2で結合するものC10”、1
:4で結合重るもので10 となる。この必安政を満
願するもの(・よアンモニア(1Qib fi I J
?、=1)のみであることが判った。周知のごとく、“
アンモニアC・よアルカリ1生的液では(卓見するので
c震度(化が泳速であり、かつ分析が国・准で液Wj!
lが6易でないこと、臭気が強いこと、毒性が強いこと
などから実用できない。As a result of extensive research into complexing agents, the present inventor discovered that the complexing agent represented by the general formula (1) has extremely ambiguous behavior. child. The solution of a common compound in a water bath solution is approximately 1 mol/l fi
However, since heavy metal complexing agents are generally strong and must be treated as waste liquid, the concentration is approximately 0.2 I/l! 4-a
Ijj', Pd2''-concentration 4.5 x 10
mol/71 When the formation constant of the complexing agent that complexes with palladium is determined by referring to the formula (6) of iL above, palladium and the complexing agent combine in a molar ratio of 1:1. Those that combine with 1026.1:2 C10'', 1
: 4 and the combined weight becomes 10. Those who fully wish for this safe government (・yoammonia (1 Qib fi I J
? , = 1). As is well known, “
In ammonia C and alkali 1 biological liquids (consider the C seismic intensity), the conversion is the swimming speed, and the analysis is the national/association liquid Wj!
It cannot be put to practical use because l is not 6, has a strong odor, and is highly toxic.
本4明煮浄は、i東々の錯化剤を倹討した結果一般式、
r12 r4−←CtL= CJ−12NH−)−M
・・・・・・・・(1)n
(ここに、n=2〜6の整数)
で表わされる化合物が著しい効果のあるものであること
を見出すに至った。この化a物の上記のパラジウムとの
生成定数は公知ではない。本□元・列者等は、以下のよ
うに考える。アルカリ性m孜中、ある挿の錯化剤は、金
属イオン−錯化剤〜水酸イオンからなる錯体全生成する
ことである。本発明に2ける錯化剤も、金属イオンがパ
ラジウムである故に、上記に類する錯体を生成し、こD
生成記数がパラジウム酸化物を生成に説明する。As a result of examining the complexing agents of iToto, this 4-year-old solution has the general formula: r12 r4-←CtL= CJ-12NH-)-M
(1) It has been found that a compound represented by n (where n = an integer of 2 to 6) has a remarkable effect. The formation constant of this compound a with the above-mentioned palladium is not known. The original and subordinates think as follows. In an alkaline environment, a complexing agent is used to form a complex consisting of a metal ion, a complexing agent and a hydroxyl ion. Since the metal ion of the complexing agent in the second aspect of the present invention is palladium, it also forms a complex similar to the above.
The formation numbers explain the formation of palladium oxide.
第1図に示す計画用試料を作製し、後述する試験列の液
による処理後、第2図のエイ呈による1りiめつきによ
シ液組成を評価した。The planning sample shown in FIG. 1 was prepared, and after treatment with the liquid in the test series described below, the composition of the liquid was evaluated by the 1st spot due to the stingray appearance shown in FIG.
第1図に示す試料のモデル省2ミック基板はセラミック
基板2上に、タン□ゲステンメタライズを正方形(1辺
の長さ2 、5帽、以下、ランドと称す)、に16S個
に分け、符号1で示すように、形成させたものである。The model of the sample shown in Fig. 1 is made by dividing the tan □ Gesten metallization into 16S squares (each side length 2, 5, hereinafter referred to as lands) on the ceramic substrate 2. It is formed as shown by reference numeral 1.
この基板を用いることによシ、ハラジクみ活理化液の性
能をNiめつきを行うことにより、析出程度で評廼した
。すなわち、谷ランド以外のセラミック基板上にニッケ
ルめっきが析出した場合、異状析出とし、各ランド全部
がニッケルめっきされ21い局舎、析出むらが生じたと
した。By using this substrate, the performance of the Harajikumi activating solution was evaluated in terms of the degree of precipitation by Ni plating. That is, when nickel plating was deposited on the ceramic substrate other than the valley lands, it was considered to be abnormal precipitation, and it was assumed that all of the lands were nickel plated, resulting in uneven precipitation.
第2図は、セラミック基・1反試71斗のめつき工程図
であり、脱脂は90(11の1oo、y、’gの苛性ソ
ーダ溶液に20分間浸漬して脱脂し、水道水で10分、
純水で1分間水洗し、60′0の活則化液に4号間浸漬
して活性化し、再度上記と同一条件で水洗し90’Oの
カニゼン製ンユーマ5680に10分1川浸ぞ責して無
峨解ニッケルめっきを行ない、再度上記と同−条件で水
洗し、ドライヤーで乾燥しでめつきを完了する。Figure 2 is a diagram of the plating process for a ceramic base with 1 test 71 dots. Degreasing is done by immersing it in a caustic soda solution of 90 (11's 1oo, y, 'g for 20 minutes, and then soaking it in tap water for 10 minutes. ,
Rinse with pure water for 1 minute, activate by immersing in 60'O activating solution for 4 minutes, wash again with water under the same conditions as above, and soak in 90'O Kanizen Nyuma 5680 for 10 minutes. Then, a non-abrasive nickel plating is performed, followed by washing again with water under the same conditions as above, and drying with a dryer to complete the plating.
試験債は、ビーカ11vc4工1呈(水洗、乾燥工、捏
以外)に要する1夜を入れ、クォータバスで所定のrM
度にした。The test bond is heated to the specified rM in a quarter bath, with one night required for 11 vc 4 kneading (excluding washing, drying, and kneading).
I did it to the degree.
実施例1−・5は本発明によるパラジウムの錯化剤をざ
む液組成において、パラジウム塩として塩化パラジウム
を用い、その一度を変えた場合の影響を検討したもので
ある。In Examples 1-5, palladium chloride was used as the palladium salt in the liquid composition containing a palladium complexing agent according to the present invention, and the effect of changing the composition once was investigated.
第1表に示されているよう□に、パラジウム塩として1
0 〜10 mol/lの濃度範囲が良いことが判っ
た。この・Itα囲より小さい値になると、パラジウム
析出喰が少なく、ニッケルめっきが析出し雌くなシ、こ
の範囲より大きい値になるとパラジウム塩(粉末)が完
全に溶解しないためセラミック基板のバタン外に付着し
、pJiめっきによる異状析出を生じた。As shown in Table 1, □ contains 1 as palladium salt.
It was found that a concentration range of 0 to 10 mol/l is good. If the value is smaller than this ・Itα range, there will be less palladium deposited and nickel plating will precipitate, but if the value is larger than this range, the palladium salt (powder) will not be completely dissolved and will not be removed from the ceramic substrate. This caused abnormal precipitation due to pJi plating.
実施例
実施■6.7は、前記の実施1列4におけるパラジウム
活性化液の成分である塩化パラジウムを、塩化パラジウ
ム以外のパラジウム塩である。In Example 6.7, palladium chloride, which is a component of the palladium activating solution in Example 1, Row 4, is a palladium salt other than palladium chloride.
硝酸パラジウム(実施りυ6)1.、硫酸パラジウムに
代えだ試験例である。Palladium nitrate (implementation υ6) 1. This is an example of a test in which palladium sulfate was used instead.
IA1表に示されている結果から、イクラジウム塩とし
て塩化パラジウム以外の硝酸パラジウムunt哨パー7
ジウムも1史用できることがわかる。From the results shown in Table IA1, palladium nitrate other than palladium chloride as an icladium salt
It can be seen that zium can also be used for one history.
実施1?lJ 8〜11
試d ilJ 8〜11ば、本発明のパラジウム活性化
、夜中のパラジウムの錯化剤が、
N13((うut Cib +’4tl ) H・・
・・・・・(1)なる一般式における、+1のI重用C
きる範囲に関し実在するもので計画した試験例]である
。Implementation 1? lJ 8-11 Test dilJ 8-11 The palladium activation of the present invention, the palladium complexing agent during the night, is N13 ((ut Cib + '4tl) H...
...+1 I heavy C in the general formula (1)
This is an example of a test designed using existing objects within the scope of the test.
1↓1衣の、を自めつきによる評1曲の1閘におけるi
i’T I+lbかtつ、■・−2〜6の範囲のものは
、I吏用できることがRJる。1↓I in 1 bar of 1 song based on my own opinion of 1 clothes
i'T I+lb and ■・Those in the range of -2 to 6 can be used for I.
Jと施汐り 12〜17
実施Hs112〜17は、本発明のバラジウノ・活性化
/IV、における錯化剤/Pd濃度のモル比を、41表
の、錯化剤/l’dモル比の側に示すように変えた場合
の実kX1ソリ″′cある。J and Shioori 12-17 Implementations Hs112-17 are based on the complexing agent/Pd concentration molar ratio in Baladyuno activation/IV of the present invention, as shown in Table 41, of the complexing agent/l'd molar ratio. There is an actual kX1 warp when changed as shown on the side.
この比の1直が小さいと、d化パラジウム(あるいは、
水酸化パラジウムの発生を防+hできず異状析出を発生
し、また、この比の1直が大きいと、パラジウムの析出
が小さくなり、ニッケルめっきの析出むらが生じたこと
は、41茂の↓〈iめつ^による計画の訓に示す通シで
ある。し〆ζかって、最」0、錯化剤/I’d$度のモ
ル比おノー囲eよ、2〜10000Cあることがわかっ
た。If the 1st ratio of this ratio is small, palladium d-dide (or
41 Shigeru's ↓< This is a general guide given to the lesson of planning by iMetsu^. However, it was found that the molar ratio of complexing agent/I'd degree is 2 to 10,000C.
5−6カイqヒリ 18〜21
実施クリ18〜21は、本発明の)くラジウム活性1ヒ
故におけるl’H1直の彰響についてのものである。5-6 Kaiq Hiri 18-21 Examples 18-21 of the present invention are about the Shokyo of l'H1 direct in the case of radium activity 1 of the present invention.
第14にホされているように、Siめっきは、Plf
9では析出し難くなり、PI410〜14.5で正′虐
に析出することがわかつ7こ。なお、計轢値でPlf力
;15のものは、液が黒化して使用可能となった。As mentioned in No. 14, Si plating is Plf
It is found that precipitation becomes difficult at PI 9, and precipitation occurs properly at PI 410 to 14.5. In addition, when the measured value of Plf force was 15, the liquid turned black and became usable.
実施例
昇施9す22.23は、本発明のノ(ラジウム活ISt
(ヒ液に対i5する、従来例の液組成のものについ−
Cの試験クリである。Example No. 9 22.23 shows the radium activated ISt of the present invention.
(Concerning the conventional liquid composition, which is i5 compared to human liquid)
This is a test result of C.
、4E 2表に示されているように、triめっき(徒
、パラジウムの錯化剤が、本@明におけるものでハl
vs 、エチレンジアミン四酢酸二ナト1ノウムである
もの(試験ヒ122 )、グリシンであるもの(試験例
26)の場合は、いずれも異常析141を生じた。, 4E As shown in Table 2, tri-plating (in the case of tri-plating), palladium complexing agent is
vs, ethylenediaminetetraacetic acid disodium (Test Example 122), and glycine (Test Example 26), abnormal analysis 141 occurred in all cases.
これらの錯化剤は5nfj=己したように、不発1!J
J &ておける錯化剤の生成定数に対して、かなり小さ
いものと考えられ、I11!化パラジウム(あるいは水
1投化パラジウム)の生成によるものと考えられるリ
:
なお、第1表に示す実施−6の組成によれば活性化液の
液・は理rせず、タングステン表面を活性化g:iリッ
トル当シ、100dm’ / l処理しても、ニッケル
めっきは正常に析出した。また、モリプデ/配線をした
セラミック基板も、上目己と全く同じ処理効果が得られ
た。また、活・住化液を調整するとき、パラジウム塩の
m解速1vを速める。目的で、上記錯化剤に加えて、分
子購造が開学なアンモニアおよびアンモニア填ヲ少着C
O,0:2 +nol / l程度)/JLtテオイ”
r4 ヨl、−tモノテ四粗になっためつきの異常析出
をなんら生じることなく、長漬命で、ffa族金属にニ
ッケル化学:めっきり能ならしめるものである。These complexing agents are 5nfj = misfire 1! J
It is considered to be quite small compared to the formation constant of the complexing agent in J&, and I11! Ri
: According to the composition of Example 6 shown in Table 1, even if the tungsten surface is activated at a rate of 100 dm'/l without treatment of the activating solution, nickel remains. The plating was deposited normally. In addition, the ceramic substrate with molybdenum/wiring had exactly the same processing effect as Kamime's. Also, when adjusting the activation/sum chemical solution, the m-lysis rate 1v of the palladium salt is increased. For this purpose, in addition to the above complexing agents, ammonia and ammonia-loaded C
O, 0:2 +nol/l degree)/JLtteoi”
r4 yol, -t monote 4 It makes the nickel chemistry of FFA group metals noticeably more effective in long soaking life without causing any abnormal precipitation of coarse nickel.
第1図は実用”例における試料、モデルセラばツク基根
の基板上のタングステンメタライズを示す正面図、第2
図は、第1図に示す試料に、試験1タリ組成液の計則の
ため、i′J+めっきを施す一一図Cある。
1・・・タングステンメタライズ
2 ・・・ セ□ラ ミ ッ り!板。
第1 図
第2図Figure 1 is a front view showing the tungsten metallization on the substrate of the base of the model ceramic block, which is a sample in a practical example.
The figure is Figure 1C, in which the sample shown in Figure 1 is subjected to i'J+ plating to determine the test 1 composition solution. 1...Tungsten metallization 2...Serami! Board. Figure 1 Figure 2
Claims (1)
び円(調整剤を必須成分とするパラジウム活1生化液番
・こおいて、1iiJ記のパラジウムの錯化剤(・」1
、F記−神式(1)、 山N GCI−12CLh NI4−÷、、 if
・・・・・・・・・・(1)(ここに、!)−2〜乙
の整数) で示さノする化b′物であることを2侍[aとするパラ
ジウム活性化液。 2 前i己のパラジウム活性化液におい−7::、 P
Hは10〜14.5であり、パラジウム謎J痰は7占1
生化d;1リットル当り1[ff−’ −10’ mo
lであり、錯化剤/パラジウムのモル濃度比は2〜1o
oooであるq!j記1清求の範囲、451項記載のパ
ラジウム活1生化液。 ろ 前記の水1谷性パラジウム塩は、塩化パラジウノ・
、硝酸パラジウム、硫酸パラジウムよりなる群中から選
ばれた1種以上を沈むものである特許請求の範囲第1項
まだtま第2項記載のパラジウム活性化液。 4、 前記のPH、IJ4整剤はアルカリ金属の水酸化
吻である時1汗請求の範囲第1項乃至第3項のいずれに
か記載のパラジウム活性化液。 5、 前記の一般式(1)で示されるパラジウムの錯化
剤は、トリエチレンラトラばン(n=5)テトラエチレ
ンペンタミン(n=4)、ベンタエブーレンへギサミン
(n=5)よりなる群中から選ばれ1種以上を含むもの
である特許請求の範囲・41項乃至第4項のいずれにか
記載のパラジウム油性化液。[Scope of Claims] 1. A water-bathable palladium salt, a palladium complexing agent, and a palladium active chemical solution number containing a regulator as an essential component. ”1
, F Book - Divine Ceremony (1), Mountain N GCI-12CLh NI4-÷,, if
・・・・・・・・・(1) (here, !) - 2 to an integer of O) A palladium activation liquid with 2 samurai [a] being a compound b' shown by the following. 2 Smell of my own palladium activation solution-7::, P
H is 10-14.5, palladium mystery J phlegm is 7 fortune 1
Biogenesis d; 1 [ff-'-10' mo per liter
l, and the molar concentration ratio of complexing agent/palladium is 2 to 1o.
It's ooo! Palladium activating liquid according to item 451, within the scope of item j, item 1. The above-mentioned water-based palladium salt is palladium chloride.
2. The palladium activation solution according to claim 1, which is capable of precipitating at least one selected from the group consisting of palladium nitrate, palladium sulfate, and palladium sulfate. 4. The palladium activation liquid according to any one of claims 1 to 3, when the PH and IJ4 adjuster is an alkali metal hydroxide. 5. The palladium complexing agent represented by the above general formula (1) is a group consisting of triethylene latraban (n = 5), tetraethylene pentamine (n = 4), and bentaeburene hegisamine (n = 5). The palladium oil-based liquid according to any one of claims 41 to 4, which contains one or more selected from among these.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20938582A JPS59100262A (en) | 1982-12-01 | 1982-12-01 | Palladium activating solution |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20938582A JPS59100262A (en) | 1982-12-01 | 1982-12-01 | Palladium activating solution |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59100262A true JPS59100262A (en) | 1984-06-09 |
Family
ID=16572031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20938582A Pending JPS59100262A (en) | 1982-12-01 | 1982-12-01 | Palladium activating solution |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59100262A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013506755A (en) * | 2009-09-30 | 2013-02-28 | アルスィメール | Solution and method for activating an oxidized surface of a semiconductor substrate |
CN104674198A (en) * | 2013-11-28 | 2015-06-03 | 中国航空工业集团公司雷华电子技术研究所 | Catalytic activation treating fluid for aluminum-based composite material coating and treatment method thereof |
-
1982
- 1982-12-01 JP JP20938582A patent/JPS59100262A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013506755A (en) * | 2009-09-30 | 2013-02-28 | アルスィメール | Solution and method for activating an oxidized surface of a semiconductor substrate |
CN104674198A (en) * | 2013-11-28 | 2015-06-03 | 中国航空工业集团公司雷华电子技术研究所 | Catalytic activation treating fluid for aluminum-based composite material coating and treatment method thereof |
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